Datasheet ST333S08PFM3L, ST333S08PFM3, ST333S08PFM1L, ST333S08PFM1, ST333S04PFM1L Datasheet (International Rectifier)

D-500

DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

ST333S SERIES

INVERTER GRADE THYRISTORS

Stud Version

330A

D-501

Bulletin I25171/B

Features

All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance

Typical Applications

Inverters
Choppers
Induction heating
All types of force-commutated converters

I

T(AV)

330 A

@ T

C

75 °C

I

T(RMS)

518 A

I

TSM

@ 50Hz 11000 A
@ 60Hz 11520 A

I

2

t @ 50Hz 605 KA2s

@ 60Hz 550 KA

2

s

V

DRM/VRRM

400 to 800 V

t

q

range 10 to 30 µs

T

J

- 40 to 125 °C

Parameters ST333S Units

Major Ratings and Characteristics

case style

TO-209AE (TO-118)

ST333S Series

D-502

Voltage V

DRM/VRRM

, maximum V

RSM

, maximum I

DRM/IRRM

max.

Type number Code repetitive peak voltage non-repetitive peak voltage

@ TJ = TJ max.

V V mA

04 400 500
08 800 900

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Frequency Units

50Hz 840 600 1280 1040 5430 4350
400Hz 650 450 1280 910 2150 1560

1000Hz 430 230 1090 730 1080 720 A
2500Hz 140 60 490 250 400 190
Recovery voltage Vr 50 50 50 50 50 50

Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 50 75 50 75 50 75 °C
Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF

I

TM

180oel

180

o

el

100µs

I

TM

I

TM

Current Carrying Capability

V

I

T(AV)

Max. average on-state current 330 A 180° conduction, half sine wave
@ Case temperature 75 °C

I

T(RMS)

Max. RMS on-state current 518 DC @ 63°C case temperature

I

TSM

Max. peak, one half cycle, 11000 t = 10ms No voltage
non-repetitive surge current 11520 A t = 8.3ms reapplied

9250 t = 10ms 100% V

RRM

9700 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 605 t = 10ms No voltage Initial TJ = TJ max

550 t = 8.3ms reapplied
430 t = 10ms 100% V

RRM

390 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 6050 KA2√s t = 0.1 to 10ms, no voltage reapplied

Parameter ST333S Units Conditions

On-state Conduction

KA2s

ST333S 50

ST333S Series

D-506

Fig. 3 - On-state Power Loss Characteristics

Fig. 4 - On-state Power Loss Characteristics

Fig. 2 - Current Ratings Characteristics

Fig. 1 - Current Ratings Characteristics

ST333S Series

D-507

Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics

Fig. 7 - On-state Voltage Drop Characteristics

Fig. 8 - Thermal Impedance Z

thJC

Characteristic

Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current

ST333S Series

D-508

Fig. 13 - Frequency Characteristics

Fig. 12 - Frequency Characteristics

Fig. 11 - Frequency Characteristics

ST333S Series

D-509

Fig. 15 - Gate Characteristics

Fig. 14 - Maximum On-state Energy Power Loss Characteristics

ST333S Series

D-503

VTMMax. peak on-state voltage 1.51 ITM= 1040A, TJ = TJ max, tp = 10ms sine wave pulse
V

T(TO)1

Low level value of threshold
voltage

V

T(TO)2

High level value of threshold
voltage

r

t

1

Low level value of forward
slope resistance

r

t

2

High level value of forward
slope resistance

I

H

Maximum holding current 600 TJ = 25°C, IT > 30A

I

L

Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

Parameter ST333S Units Conditions

On-state Conduction

0.91 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

0.92 (I > π x I

T(AV)

), TJ = TJ max.

V

0.58 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

0.58 (I > π x I

T(AV)

), TJ = TJ max.

mΩ

mA

di/dt Max. non-repetitive rate of rise T

J

= TJ max, V

DRM

= rated V

DRM

of turned-on current I

TM

= 2 x di/dt

T

J

= 25°C, V

DM

= rated V

DRM, ITM

= 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T

J

= TJ max, I

TM

= 550A, commutating di/dt = 40A/µs

V

R

= 50V, tp = 500µs, dv/dt: see table in device code

Switching

Parameter ST333S Units Conditions

1000 A/µs

t

d

Typical delay time 1.0

Min Max

dv/dt Maximum critical rate of rise of T

J

= TJ max. linear to 80% V

DRM

, higher value

off-state voltage available on request

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Parameter ST333S Units Conditions

Blocking

500 V/µs

50 mA T

J

= TJ max, rated V

DRM/VRRM

applied

PGMMaximum peak gate power 60
P

G(AV)

Maximum average gate power 10

I

GM

Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

I

GT

Max. DC gate current required
to trigger

V

GT

Max. DC gate voltage required
to trigger

I

GD

Max. DC gate current not to trigger 20 mA

V

GD

Max. DC gate voltage not to trigger 0.25 V

Triggering

Parameter ST333S Units Conditions

20

5

V TJ = TJ max, tp ≤ 5ms

200 mA

3 V

T

J

= 25°C, VA = 12V, Ra = 6Ω

TJ = TJ max, rated V

DRM

applied

t

q

Max. turn-off time 10 30

µs

W TJ = TJ max, f = 50Hz, d% = 50

ST333S Series

D-504

TJMax. junction operating temperature range -40 to 125
T

stg

Max. storage temperature range -40 to 150

R

thJC

Max. thermal resistance, junction to case 0.10 DC operation

R

thCS

Max. thermal resistance, case to heatsink 0.03 Mounting surface, smooth, flat and greased

T Mounting torque, ± 10% 48.5 Nm

(425) (Ibf-in)

wt Approximate weight 535 g

Case style TO-209AE (TO-118) See Outline Table

Parameter ST333S Units Conditions

Thermal and Mechanical Specifications

°C

K/W

Non lubricated threads

Ordering Information Table

5 6 8 9

ST 33 3 S 08 P F M 0

3

4

7

Device Code

21

10

180° 0.011 0.008
120° 0.013 0.014

90° 0.017 0.018 K/W T

J

= TJ max.
60° 0.025 0.026
30° 0.041 0.042

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

∆R

thJC

Conduction

(The following table shows the increment of thermal resistence R

thJC

when devices operate at different conduction angles than DC)

1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - S = Compression bonding Stud
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Ratings table)

6 - P = Stud base 3/4" 16UNF-2A

M = Stud base metric threads M24 x 1.5

7 - Reapplied dv/dt code (for t

q

test condition)

8 - t

q

code

9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads)

1 = Fast-on terminals (Gate and Aux. Cathode Leads)
3 = Threaded top terminal 3/8" 24UNF-2A

- Critical dv/dt:
None= 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)

dv/dt - tq combinations available

dv/dt (V/µs) 20 50 100 200 400

10 CN DN EN -- -­12 CM DM EM FM * -­15 CL DL EL FL * HL
18 CP DP EP FP HP
20 CK DK EK FK HK
25 -- -- -- FJ HJ
30 -- -- -- -- HH

tq(µs)

*Standard part number.

All other types available only on request.

10

ST333S Series

D-505

Fast-on Terminals

Outline Table

Case Style TO-209AE (TO-118)

with top thread terminal 3/8"

All dimensions in millimeters (inches)

RED CATHODE

RED SILICON RUBBER

10.5 (0.41)

24 5 (9.6 5) ± 1 0 (0.3 9)

WHITE GATE

4.3 (0.17) DIA.

CERAMIC HOUSING

WHITE SHRINK

NOM.

47 (1.85)

MAX.

245 (9.65)

38 (1.50)
MAX. DIA.

* FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX.

22 (0.87) MAX.

MAX .

21 (0.82) M AX.

SW 45

2

FLEXIBLE LEAD

4.5 (0.18) MAX.

C.S. 50mm
(0.078 s.i.)

25 5 (10.04 )

RED SHRINK

2

2

(

0

.

8

6

)

M

I

N

.

49 (1.92) MAX.

3/4"16 UNF-2A

2 7 .5 (1 .08 )

9

.

5

(

0

.

3

7

)

M

I

N

.

Case Style TO-209AE (TO-118)

All dimensions in millimeters (inches)

47 (1 . 8 5)

27.5 ( 1.08)

77.5 ( 3 .05)

80.5 ( 3 .17)

38 (1.5)

DIA. MAX.

M A X.

M A X .

M AX .

CERAMIC HOUSING

SW 45

* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.

21 ( 0 .83)

3/4"-16UNF-2A *

25 (0 . 9 8)

3/8"-24UNF-2A

17 (0.67) DIA.

AMP. 280000-1

REF-250