Datasheet ST333C08CHK3L, ST333C08CHK3, ST333C08CHK2L, ST333C04CHK3L, ST333C04CHK2 Datasheet (International Rectifier)

DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

720A

INVERTER GRADE THYRISTORS Hockey Puk Version

ST333C..C SERIES

Bulletin I25170/A

case style TO-200AB (E-PUK)

Features

Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance

Typical Applications

Inverters
Choppers
Induction heating
All types of force-commutated converters

I

T(AV)

720 A

@ T

hs

55 °C

I

T(RMS)

1435 A

@ T

hs

25 °C

I

TSM

@ 50Hz 11000 A
@ 60Hz 11500 A

I

2

t @ 50Hz 605 KA2s

@ 60Hz 553 KA

2

s

V

DRM/VRRM

400 to 800 V

t

q

range 10 to 30 µs

T

J

- 40 to 125 °C

Parameters ST333C..C Units

Major Ratings and Characteristics

ST333C..C Series

Voltage V

DRM/VRRM

, maximum V

RSM

, maximum I

DRM/IRRM

max.

Type number Code repetitive peak voltage non-repetitive peak voltage

@ TJ = TJ max.

V V mA

04 400 500
08 800 900

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Frequency Units

50Hz 1630 1420 2520 2260 7610 6820
400Hz 1630 1390 2670 2330 4080 3600

1000Hz 1350 1090 2440 2120 2420 2100 A
2500Hz 720 550 1450 1220 1230 1027

Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF

I

TM

180oel

180

o

el

100µs

I

TM

I

TM

Current Carrying Capability

V

I

T(AV)

Max. average on-state current 720 (350) A 180° conduction, half sine wave
@ Heatsink temperature 55 (75) °C double side (single side) cooled

I

T(RMS)

Max. RMS on-state current 1435 DC @ 25°C heatsink temperature double side cooled

I

TSM

Max. peak, one half cycle, 11000 t = 10ms No voltage
non-repetitive surge current 11500 A t = 8.3ms reapplied

9250 t = 10ms 100% V

RRM

9700 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 605 t = 10ms No voltage Initial TJ = TJ max

553 t = 8.3ms reapplied
428 t = 10ms 100% V

RRM

391 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 6050 KA2√s t = 0.1 to 10ms, no voltage reapplied

Parameter ST333C..C Units Conditions

On-state Conduction

KA2s

ST333C..C 50

ST333C..C Series

Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics

Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics

Fig. 7 - Maximum Non-repetitive Surge Current Fig. 8 - Maximum Non-repetitive Surge Current

ST333C..C Series

Fig. 9 - On-state Voltage Drop Characteristics

Fig. 10 - Thermal Impedance Z

thJ-hs

Characteristics

Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics

Fig. 13 - Frequency Characteristics

ST333C..C Series

Fig. 14 - Frequency Characteristics

Fig. 15 - Frequency Characteristics

Fig. 16 - Maximum On-state Energy Power Loss Characteristics

ST333C..C Series

Fig. 17 - Gate Characteristics

ST333C..C Series

V

TM

Max. peak on-state voltage 1.96 ITM= 1810A, TJ = TJ max, tp = 10ms sine wave pulse

V

T(TO)1

Low level value of threshold
voltage

V

T(TO)2

High level value of threshold
voltage

r

t

1

Low level value of forward
slope resistance

r

t

2

High level value of forward
slope resistance

I

H

Maximum holding current 600 TJ = 25°C, IT > 30A

I

L

Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

Parameter ST333C..C Units Conditions

On-state Conduction

0.91 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

0.93 (I > π x I

T(AV)

), TJ = TJ max.

V

0.58 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

0.58 (I > π x I

T(AV)

), TJ = TJ max.

mΩ

mA

di/dt Max. non-repetitive rate of rise T

J

= TJ max, V

DRM

= rated V

DRM

of turned-on current I

TM

= 2 x di/dt

T

J

= 25°C, V

DM

= rated V

DRM, ITM

= 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T

J

= TJ max, I

TM

= 550A, commutating di/dt = 40A/µs

V

R

= 50V, tp = 500µs, dv/dt: see table in device code

Switching

Parameter ST333C..C Units Conditions

1000 A/µs

t

d

Typical delay time 1.1

Min Max

dv/dt Maximum critical rate of rise of T

J

= TJ max. linear to 80% V

DRM

, higher value

off-state voltage available on request

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Parameter ST333C..C Units Conditions

Blocking

500 V/µs

50 mA T

J

= TJ max, rated V

DRM/VRRM

applied

P

GM

Maximum peak gate power 60

P

G(AV)

Maximum average gate power 10

I

GM

Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

I

GT

Max. DC gate current required
to trigger

V

GT

Max. DC gate voltage required
to trigger

I

GD

Max. DC gate current not to trigger 20 mA

V

GD

Max. DC gate voltage not to trigger 0.25 V

Triggering

Parameter ST333C..C Units Conditions

W TJ = TJ max., f = 50Hz, d% = 50

20

5

V TJ = TJ max, tp ≤ 5ms

200 mA

3 V

T

J

= 25°C, VA = 12V, Ra = 6Ω

TJ = TJ max, rated V

DRM

applied

t

q

Max. turn-off time 10 30

µs

ST333C..C Series

T

J

Max. operating temperature range -40 to 125

T

stg

Max. storage temperature range -40 to 150

R

thJ-hs

Max. thermal resistance, 0.09 DC operation single side cooled
junction to heatsink 0.04 DC operation double side cooled

R

thC-hs

Max. thermal resistance, 0.020 DC operation single side cooled
case to heatsink 0.010 DC operation double side cooled

F Mounting force, ± 10% 9800 N

(1000) (Kg)

wt Approximate weight 83 g

Parameter ST333C..C Units Conditions

K/W

Thermal and Mechanical Specification

°C

Case style TO - 200AB (E-PUK) See Outline Table

K/W

∆R

thJ-hs

Conduction

(The following table shows the increment of thermal resistence R

thJ-hs

when devices operate at different conduction angles than DC)

Single Side Double Side Single Side Double Side

180° 0.010 0.011 0.007 0.007
120° 0.012 0.012 0.012 0.013

90° 0.015 0.015 0.016 0.017 K/W T

J

= TJ max.
60° 0.022 0.022 0.023 0.023
30° 0.036 0.036 0.036 0.036

Sinusoidal conduction Rectangular conduction

Conduction angle Units Conditions

Ordering Information Table

ST 33 3 C 08 C H K 1

Device Code

5 6 8 9

3

4

10

7

1 2

1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Rating Table)

6 - C = Puk Case TO-200AB (E-PUK)
7 - Reapplied dv/dt code (for t

q

test condition)

8 - t

q

code

9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)

1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)

3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)

- Critical dv/dt:
None = 500V/µsec (Standard value)

L

= 1000V/µsec (Special selection)

dv/dt - tq combinations available

dv/dt (V/µs) 20 50 100 200 400

10 CN DN EN -- -­12 CM DM EM FM * -­15 CL DL EL FL * HL
18 CP DP EP FP HP
20 CK DK EK FK HK
25 -- -- -- FJ HJ
30 -- -- -- -- HH

tq(µs)

*Standard part number.

All other types available only on request.

10

ST333C..C Series

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Outline Table

Case Style TO-200AB (E-PUK)

All dimensions in millimeters (inches)

DIA. MAX.

4.75 (0.19)

28 (1.10)

6.5 (0.26)

0.3 (0.01) MIN.

0.3 (0.01) MIN.

ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.

25.3 (0.99)

14.1 / 15.1

(0.56 / 0.59)

25°± 5°

GATE TERM. FOR

1.47 (0.06) DIA.
PIN RECEPTACLE

25.3 (0.99)

40.5 (1.59) DIA. MAX.

DIA. MAX.

2 HOLES 3.56 (0.14) x

1.83 (0.07) MIN. DEEP

42 (1.65) MAX.