Datasheet ST330SPbF Series DataSheet (Vishay)

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 330 A

FEATURES

• Center amplifying gate

• International standard case TO-209AE (TO-118)

• Hermetic metal case with ceramic insulator

• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling

• Lead (Pb)-free

• Designed and qualified for industrial level

ST330SPbF Series

RoHS

COMPLIANT

TO-209AE (TO-118)

TYPICAL APPLICATIONS

• DC motor controls

PRODUCT SUMMARY

I

T(AV)

330 A

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 9000

60 Hz 9420

50 Hz 405

60 Hz 370

Typical 100 µs

330 A

75 °C

520

400 to 2000 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

A

kA2s

VOLTAGE RATINGS

V

TYPE NUMBER

ST330S

Document Number: 94409 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

20 2000 2100

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

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MAXIMUM

mA

50

ST330SPbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 330 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4050 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

180° conduction, half sine wave 330 A

75 °C

DC at 75 °C case temperature 520

t = 10 ms

t = 8.3 ms 9420

t = 10 ms

t = 8.3 ms 7920

t = 10 ms

t = 8.3 ms 370

t = 10 ms

t = 8.3 ms 262

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.898

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.636

T(AV)

), TJ = TJ maximum 0.834

T(AV)

), TJ = TJ maximum 0.687

T(AV)

9000

7570

405

287

Ipk = 1000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 V

TJ = 25 °C, anode supply 12 V resistive load

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

I

RRM,

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 50 mA

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Document Number: 94409

2 Revision: 11-Aug-08

ST330SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 330 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C 2.5 -

= 25 °C 1.8 3

T

J

= 125 °C 1.1 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thC-hs

DC operation 0.10

Mounting surface, smooth, flat and greased 0.03

Mounting torque, ± 10 % Non-lubricated threads

Approximate weight 535 g

Case style See dimension - link at the end of datasheet TO-209AE (TO-118)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.011 0.008

120° 0.013 0.014

T

90° 0.017 0.018

= TJ maximum K/W

J

60° 0.025 0.026

30° 0.041 0.042

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

- 40 to 125

- 40 to 150

48.5

(425)

(lbf · in)

°C

K/W

N · m

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Revision: 11-Aug-08 3

ST330SPbF Series

Vishay High Power Products

130

120

110

100

90

80

70

Maximum Allowab le Case Temperature (°C)

0 50 100 150 200 250 300 350

ST3 30 S Se r i e s
R (DC) = 0.10 K/W

thJC

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

480

440

400

360

320

280

240

200

160

120

80

180°
120°

90°
60°
30°

RM S Lim it

40

0

Maximum Average On-state Power Loss (W)

0 50 100 1 50 200 250 300 350

Average On-state Current (A)

Phase Control Thyristors

(Stud Version), 330 A

130

120

110

100

90

80

180°

0

.

0

8

K

/

W

0

.

1

2

K

/

W

0

.

2

K

/

W

0

.

3

K

/

W

0

.

4

K

/

Conduction Angle

ST3 3 0S Se r i e s
T = 12 5° C

J

W

0

.

6

K

/

W

1

.

2

K

/

W

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - On-State Power Loss Characteristics

70

60

Maximum Allowable Case Temperature (°C)

0 100 200 300 400 500 600

R

t

h

S

A

=

0

.

0

3

K

/

W

ST3 3 0S Se ri e s
R (DC) = 0.10 K/ W

thJC

Conduction Period

30°

60°

90°

120°

180°

Average On-st ate Current (A)

­D

e

l

t

a

R

DC

650

600

550

500

450

400

350

300

250

200

150

100

50

Maximum Average On-state Power Loss (W)

DC
180°
120°

90°

60°

30°

RM S Li m it

Conduc tion Period

ST3 30 S Se r i e s
T = 125°C

J

0

0 100 200 300 400 500 600

Average On-st ate Current (A)

R

t

hS

=

A

0.0

0

.

0

0

.

1

0

.

2

0

.

3

0

.

4

0

.

6

1

.

2

3 K/W

8

K

/

W

2

K

/

W

K

/

W

K

/

W

K

/

W

K

/

W

K

/

W

-

De

lta R

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

Fig. 4 - On-State Power Loss Characteristics

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Document Number: 94409

4 Revision: 11-Aug-08

ST330SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 330 A

8000

At Any Rated Load Condition And With

Rated V Applied Following Surge.

7500

7000

6500

6000

5500

5000

4500

ST3 3 0S Se r i e s

4000

3500

Pe a k Half Sine Wa ve On -state Current ( A)

110100

Numbe r Of Equa l Amplitud e Half Cy c le Current Pulse s (N)

RRM

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

10000

9000

Maximum Non Repetitive Surge Current

Versus Pulse Train Duration. Cont rol

Of Conduction May Not Be Maintained.

8000

7000

6000

5000

Pe a k Ha lf Sin e W a ve O n- st a te C urr ent (A )

4000

3000

ST330S Se rie s

0.01 0.1 1

Pulse Train Duration (s)

Initial T = 125°C

No Voltage Reapplied
Rated V Reapplied

RRM

J

1

thJC

0.1

0.01

1000

Instantaneous On-state Current (A)

100

St e a d y St a t e V a l u e

R = 0.10 K/ W

thJC

(DC Operation)

Tj = 25 °C

Tj = 125 °C

ST330S Series

0123 4567

Instantaneous On-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

ST3 3 0 S Se r i e s

0.001

Transient Thermal Impedance Z (K/ W)

0.001 0.01 0. 1 1 10

Sq u a r e W a v e P u l se D u r a t i o n ( s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

Document Number: 94409 For technical questions, contact: [e-mail]

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Revision: 11-Aug-08 5

ST330SPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rat ed d i/ dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms

10

tr<=1 µs

1

Inst an ta n e ous Ga te Vo lt ag e ( V )

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

VGD

Phase Control Thyristors

(Stud Version), 330 A

(a)

(b)

Tj = -4 0 °C

Tj = 2 5 ° C

Tj = 1 2 5 ° C

IGD

D e v i c e : ST3 30 S Se r ie s

In st a n t a n e o us G a te C ur re n t ( A )

Fig. 9 - Gate Characteristics

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, t p = 0.66ms

(2)

(1)

Frequenc y Limited by PG(AV)

(3)

(4)

Device code

ST 33 0 S 16 P 0 PbF

51324678

1 - Thyristor

2 - Essential part number

3 - 0 = Converter grade

4

- S = Compression bonding stud

5

- Voltage code x 100 = V

6

- P = Stud base 3/4"-16UNF-2A threads

7

- 0 = Eyelet terminals (gate and auxiliary cathode leads)

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode leads)

8 - Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95080

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6 Revision: 11-Aug-08

Document Number: 94409

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

DIMENSIONS in millimeters (inches)

Ceramic housing

TO-209AE (TO-118)

Case Style TO-209AE (TO-118)

22 (0.87) MAX.

4.3 (0.17) DIA.

Outline Dimensions

Vishay High Power Products

Red silicon rubber

38 (1.50)

MAX. DIA.

245 (9.65)

255 (10.04)

Red shrink

MAX.

27.5 (1.08)

49 (1.92) MAX.

10.5 (0.41) NOM.

Red cathode

White shrink

SW 45

3/4"16 UNF-2A

21 (0.82) MAX.

(1)

MAX.

47 (1.85)

White gate

245 (9.65) ± 10 (0.39)

Fast-on terminals

AMP. 280000-1

REF-250

Flexible leads

C.S. 50 mm

(0.078 s.i.)

4.5 (0.18) MAX.

MIN.

9.5 (0.37)

22 (0.86) MIN.

2

Note

(1)

For metric device: M24 x 1.5 - length 21 (0.83) maximum

Document Number: 95080 For technical questions concerning discrete products, contact: [e-mail]
Revision: 02-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1