ST330S Series
23
Parameter ST330S Units Conditions
Switching
t
q
Typical turn-off time 100
t
d
Typical delay time 1.0
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, t
r
≤ 1µs
of turned-on current T
J
= TJ max, anode voltage ≤ 80% V
DRM
Gate current A, dig/dt = 1A/µs
V
d
= 0.67% V
DRM, TJ
= 25°C
I
TM
= 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
dv/dt
= 20V/µs, Gate 0V 100Ω, tp = 500µs
1000 A/µs
µs
dv/dt Maximum critical rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Blocking
500 V/µs TJ = TJ max. linear to 80% rated V
DRM
Parameter ST330S Units Conditions
50 mA TJ = TJ max, rated V
DRM/VRRM
applied
P
GM
Maximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms
P
G(AV)
Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required TJ = - 40°C
to trigger mA T
J
= 25°C
T
J
= 125°C
V
GT
DC gate voltage required TJ = - 40°C
to trigger V T
J
= 25°C
T
J
= 125°C
I
GD
DC gate current not to trigger 10 mA
Parameter ST330S Units Conditions
20
5.0
Triggering
V
GD
DC gate voltage not to trigger 0.25 V
T
J
= TJ max
TYP. MAX.
200 100 200
50 -
2.5 -
1.8 3.0
1.1 Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ current/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
V T
J
= TJ max, tp ≤ 5ms