Datasheet ST330S Datasheet (IOR)

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Bulletin I25156/B

ST330S SERIES

PHASE CONTROL THYRISTORS Stud Version

Features

Center amplifying gate
Hermetic metal case with ceramic insulator
International standard case TO-209AE (TO-118)
Threaded studs UNF 3/4 - 16UNF2A or ISO M24x1.5
Compression Bonded Encapsulation for heavy duty

operations such as severe thermal cycling

Typical Applications

DC motor controls
Controlled DC power supplies
AC controllers

Major Ratings and Characteristics

Parameters ST330S Units

330A

I

T(AV)

@ T

C

I

T(RMS)

I

TSM

2

I

t @ 50Hz 405 KA2s

V

DRM/VRRM

t

q

T

J

@ 50Hz 9000 A
@ 60Hz 9420 A

@ 60Hz 370 KA

typical 100 µs

330 A

75 °C

520 A

400 to 1600 V

- 40 to 125 °C

2

s

case style

TO-209AE (TO-118)

ST330S Series

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

Type number Code peak and off-state voltage repetitive peak voltage

04 400 500
08 800 900

ST330S 12 1200 1300 50

14 1400 1500
16 1600 1700

On-state Conduction

, max. repetitive V

, maximum non- I

RSM

DRM/IRRM

@ TJ = TJ max

V V mA

max.

Parameter ST330S Units Conditions

I

T(AV)

I

T(RMS)

I

TSM

2

I

2

I
V

V

Max. average on-state current 330 A 180° conduction, half sine wave
@ Case temperature 75 °C

Max. RMS on-state current 520 A DC @ 62°C case temperature
Max. peak, one-cycle 9000 t = 10ms No voltage
non-repetitive surge current 9420 t = 8.3ms reapplied

7570 t = 10ms 100% V

A

RRM

7920 t = 8.3ms reapplied Sinusoidal half wave,

t Maximum I2t for fusing 405 t = 10ms No voltage Initial TJ = TJ max.

370 t = 8.3ms reapplied
287 t = 10ms 100% V

KA2s

RRM

262 t = 8.3ms reapplied

√t Maximum I2√t for fusing 4050 KA2√s t = 0.1 to 10ms, no voltage reapplied

Low level value of threshold

T(TO)1

voltage
High level value of threshold

T(TO)2

voltage

0.91 (16.7% x π x I
V

0.92 (I > π x I

T(AV)

< I < π x I

T(AV)

),TJ = TJ max.

), TJ = TJ max.

T(AV)

12

r

t

r

t

V
I

H

I

L

Low level value of on-state

1

slope resistance
High level value of on-state

2

slope resistance
Max. on-state voltage 1.51 V Ipk= 1040A, TJ = TJ max, tp = 10ms sine pulse

TM

0.58 (16.7% x π x I

mΩ

0.57 (I > π x I

T(AV)

< I < π x I

T(AV)

),TJ = TJ max.

T(AV)

Maximum holding current 600
Typical latching current 1000

mA T

= 25°C, anode supply 12V resistive load

J

), TJ = TJ max.

2222222222222

ST330S Series

Fig. 4 - On-state Power Loss Characteristics

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Fig. 3 - On-state Power Loss Characteristics

ST330S Series

Fig. 8 - Thermal Impedance Z

Characteristic

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

Fig. 7 - On-state Voltage Drop Characteristics

ST330S Series

Fig. 9 - Gate Characteristics

Switching

Parameter ST330S Units Conditions

ST330S Series

di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, t

of turned-on current T

1000 A/µs

= TJ max, anode voltage ≤ 80% V

J

Gate current A, dig/dt = 1A/µs

t

d

t

q

Typical delay time 1.0

Typical turn-off time 100

µs

V

= 0.67% V

d

I

= 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V

TM

dv/dt

= 20V/µs, Gate 0V 100Ω, tp = 500µs

DRM, TJ

Blocking

Parameter ST330S Units Conditions

dv/dt Maximum critical rate of rise of

off-state voltage

I

RRM

I

DRM

Max. peak reverse and off-state
leakage current

500 V/µs TJ = TJ max. linear to 80% rated V

50 mA TJ = TJ max, rated V

Triggering

Parameter ST330S Units Conditions

≤ 1µs

r

= 25°C

DRM/VRRM

DRM

DRM

applied

23

P
P
I
+V

-V

I

V

I

V

Maximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms

GM

Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50

G(AV)

Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms

GM

Maximum peak positive

GM

gate voltage
Maximum peak negative

GM

gate voltage

20

5.0

W

V T

= TJ max, tp ≤ 5ms

J

TYP. MAX.

DC gate current required TJ = - 40°C

GT

to trigger mA T

DC gate voltage required TJ = - 40°C

GT

to trigger V T

DC gate current not to trigger 10 mA

GD

DC gate voltage not to trigger 0.25 V

GD

200 ­100 200

50 -

2.5 -

1.8 3.0

1.1 -

= 25°C

J

T

= 125°C

J

= 25°C

J

T

= 125°C

J

= TJ max

T

J

Max. required gate trigger/ cur­rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied

Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V

anode-to-cathode applied

DRM

ST330S Series

Thermal and Mechanical Specification

Parameter ST330S Units Conditions

T

Max. operating temperature range -40 to 125

J

T

Max. storage temperature range -40 to 150

stg

R

Max. thermal resistance,

thJC

junction to case

R

Max. thermal resistance,

thCS

case to heatsink

T Mounting torque, ± 10% 48.5

wt Approximate weight 535 g

Case style TO - 209AE (TO-118) See Outline Table

0.10 DC operation

0.03 Mounting surface, smooth, flat and greased

(425)

°C

K/W

Nm

(lbf-in)

Non lubricated threads

∆R

(The following table shows the increment of thermal resistence R

Conduction

thJC

when devices operate at different conduction angles than DC)

thJC

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

180° 0.011 0.008 T
120° 0.013 0.014

90° 0.017 0.018 K/W
60° 0.025 0.026
30° 0.041 0.041

= TJ max.

J

Ordering Information Table

Device Code

ST 33 0 S 16 P 0

7

8

1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade

3

51 2

4

6

12

2222222222222

4 - S = Compression bonding Stud
5 - Voltage code: Code x 100 = V

(See Voltage Rating Table)

RRM

6 - P = Stud base 16UNF threads

M = Stud base metric threads (M24 x 1.5)

7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)

1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
3 = Threaded top terminal 3/8" 24UNF-2A

8 - Critical dv/dt: None = 500V/µsec (Standard selection)

L = 1000V/µsec (Special selection)

Outline Table

245 (9.65) ± 10 (0.3 9)

47 (1.85)

MA X .

245 (9 .65)

* FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX.

MA X .

21 (0.82) MA X .

255 (10.04 )

2

2

(

0

.

8

6

)

M

I

N

.

27.5 (1.08)

9

.

5

(

0

.

3

7

)

M

I

N

.

47 (1.85)

27.5 (1.08)

77.5 (3.05)

80.5 (3.17)

MA X.

M AX .

MAX.

* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.

21 (0.83)

25 (0.98)

CERAMIC HOUSING

22 (0.87) MAX.

4.3 (0.17) DIA.

ST330S Series

4.5 (0.18) MAX.

RED SILICON RUBBER

38 (1.50)
MAX. DIA.

RED SHRINK

10.5 (0.41)

49 (1.92) MAX.

NOM.

RED CATHODE

WHITE SHRINK

SW 45

3/4"16 UNF-2A

WHITE GATE

FLEXIBLE LEAD

C.S. 50mm
(0.078 s.i.)

2

Fast-on Terminals

AMP. 280000-1

REF-250

23

Case Style TO-209AE (TO-118)

All dimensions in millimeters (inches)

CERAMIC HOUSING

17 (0.67) DIA.

3/8"-24UNF-2A

Case Style TO-209AE (TO-118)

38 (1.5)

DIA. MAX.

with top thread terminal 3/8"

All dimensions in millimeters (inches)

3/4"-16UNF-2A *

SW 45