Datasheet ST330CPbF Series DataSheet (Vishay)

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 720 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AB (E-PUK)

• Lead (Pb)-free

• Designed and qualified for industrial level

ST330CPbF Series

RoHS

COMPLIANT

TO-200AB (E-PUK)

TYPICAL APPLICATIONS

• DC motor controls

PRODUCT SUMMARY

I

T(AV)

720 A

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 9000

60 Hz 9420

50 Hz 405

60 Hz 370

Typical 100 µs

720 A

55 °C

1420 A

25 °C

400 to 1600 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

A

kA2s

VOLTAGE RATINGS

V

TYPE NUMBER

ST330C..C

Document Number: 94407 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

14 1400 1500

16 1600 1700

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

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MAXIMUM

mA

50

ST330CPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 720 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 4050 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 1420

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 9420

t = 10 ms

t = 8.3 ms 7920

t = 10 ms

t = 8.3 ms 370

t = 10 ms

t = 8.3 ms 262

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 1810 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.96 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.92

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.57

T(AV)

), TJ = TJ maximum 0.91

T(AV)

), TJ = TJ maximum 0.58

T(AV)

720 (350) A

55 (75) °C

9000

7570

405

287

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 50 mA

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Document Number: 94407

2 Revision: 11-Aug-08

ST330CPbF Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 720 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C 2.5 -

= 25 °C 1.8 3.0

T

J

T

= 125 °C 1.1 -

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.09

DC operation double side cooled 0.04

DC operation single side cooled 0.02

DC operation double side cooled 0.01

Mounting force, ± 10 %

Approximate weight 83 g

Case style See dimensions - link at the end of datasheet TO-200AB (E-PUK)

ΔR

CONDUCTION ANGLE

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

TEST CONDITIONS UNITS

180° 0.012 0.011 0.008 0.007

120° 0.014 0.012 0.014 0.013

90° 0.017 0.015 0.019 0.017

= TJ maximum K/W

T

J

60° 0.025 0.022 0.026 0.023

30° 0.043 0.036 0.043 0.037

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJ-hs

- 40 to 125

- 40 to 150

9800

(1000)

°C

K/W

N

(kg)

Document Number: 94407 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Aug-08 3

ST330CPbF Series

)

Vishay High Power Products

130

120

110

100

90

80

70

0 50 100 150 200 250 300 350 400

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

0 100 200 300 400 500 600 700 800 900

Maximum Allowable Heatsink Temperature (°C)

Average On-st ate Current (A)

Fig. 2 - Current Ratings Characteristics

ST3 30 C . . C Se r i e s
(Single Side Cooled)
R (DC) = 0.09 K/ W

thJ-hs

Cond uc tion Angle

30°

60°

90°

ST3 3 0 C . . C Se r ie s
(Single Side Cooled)
R (DC) = 0.09 K/ W

thJ-hs

Conduction Period

60°

30°

90°

120°

180°

120°

180°

DC

Phase Control Thyristors

(Hockey PUK Version), 720 A

130

120

110

100

90

80

70

60

50

40

30

20

10

0 200 400 600 800 1000 1200 1400 1600

Maximum Allowable Heat sink Temperature (°C

1400

1200

1000

800

600

400

200

0

Ma ximum A ve rag e O n-st at e Pow er Lo ss (W )

0 100 200 300 400 500 600 700 800

Fig. 5 - On-State Power Loss Characteristics

ST330C..C Se rie s
(Double Side Cooled)
R (DC) = 0.04 K/W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

DC

Average On-state Current (A)

Fig. 4 - Current Ratings Characteristics

180°
120°

90°
60°
30°

Average On-st ate Current (A)

RM S Li m i t

Cond uction Angle

ST3 3 0 C . . C Se r ie s
T = 125° C

J

130

120

110

100

90

80

70

60

50

40

30

20

0 200 400 600 800 1000

Maximum Allowable Heatsink Temperature (°C)

Averag e On-sta te Current (A)

ST3 30 C . . C Se r ie s
(Double Side Cooled)
R (DC) = 0.04 K/ W

thJ-hs

Cond uc tion Angle

30°

60°

90°

120°

Fig. 3 - Current Ratings Characteristics

180°

1800

1600

1400

1200

1000

800

600

400

200

Maximum Averag e On-state Power Loss (W)

DC
180°
120°

90°
60°
30°

RM S Lim it

Conduction Period

ST330C. .C Se rie s
T = 125°C

J

0

0 200 400 600 800 1000 1200

Average On-state Current (A)

Fig. 6 - On-State Power Loss Characteristics

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Document Number: 94407

4 Revision: 11-Aug-08

ST330CPbF Series

Phase Control Thyristors

(Hockey PUK Version), 720 A

8000

At Any Ra t ed Loa d Cond it ion An d With

Rated V Applied Following Surge.

7500

7000

6500

6000

5500

5000

ine Wave On-state Current (A)

4500

ST3 30 C . . C Se r i e s

4000

Pea k Ha lf S

3500

110100

Numbe r Of Equa l Amp litud e Half Cyc le Current Pulse s (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

RRM

Init ial T = 125° C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Single and Double Side Cooled

10000

T = 25 ° C

J

Vishay High Power Products

9000

Maximum Non Repetitive Surge Current

8500

8000

7500

7000

6500

6000

5500

5000

4500

4000

Peak Half Sine Wave On-state Current (A)

3500

Fig. 8 - Maximum Non-Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction Ma y Not Be Maintained.

ST3 30 C . . C Se r ie s

0.01 0.1 1

Pul se Tra in Du ra t io n ( s)

Initial T = 125°C

No Voltage Reapplied
Ra te d V Re a p p lied

J

RRM

Single and Double Side Cooled

0.1
St e a d y St a t e Va l u e

R = 0.09 K/W

thJ-hs

(Single Side Cooled)

thJ-hs

R = 0.04 K/W

thJ-hs

(Double Side Cooled)

(DC Operation)

0.01

T = 1 25 °C

J

1000

ST330C..C Serie s

In sta n t a n eo us O n-st at e C urr en t ( A)

100

01234567

Instantaneous On-state Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

ST3 3 0C . . C Se r i e s

0.001

Tra nsient The rma l Imp eda nc e Z (K/ W)

0.001 0.01 0.1 1 10

Sq u a r e W a v e P u l s e D u r a t i o n ( s )

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

Document Number: 94407 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 11-Aug-08 5

ST330CPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms ; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms

10

tr<=1 µs

1

In st a nt a n e ou s G a t e V o lt a g e ( V )

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

VGD

IG D

Phase Control Thyristors

(Hockey PUK Version), 720 A

(1) PGM = 10W, tp = 4 ms
(2) PGM = 20W, tp = 2 ms
(3) PGM = 40W, tp = 1 ms
(4) PGM = 60W, tp = 0.66 ms

(a)

(b)

Tj = - 40 ° C

Tj = 25 ° C

Tj = 1 25 ° C

D e v ic e : ST3 3 0C . . C Se r i e s

Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

Freq uenc y Limited by PG(AV)

(1)

(2)

(3)

(4)

Device code

ST 33 0 C 16 C 1 - PbF

324

1

- Thyristor

2

- Essential part number

3

- 0 = Converter grade

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

- C = PUK case TO-200AB (E-PUK)

7

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

51

6789

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

8

- Critical dV/dt:

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

9

- Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95075

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6 Revision: 11-Aug-08

Document Number: 94407

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

TO-200AB (E-PUK)

Case Style TO-200AB (E-PUK)

Anode to gate
Creepage distance: 11.18 (0.44) minimum
Strike distance: 7.62 (0.30) minimum

25.3 (0.99)
DIA. MAX.

0.3 (0.01) MIN.

14.1/15.1

(0.56/0.59)

25.3 (0.99)
DIA. MAX.

40.5 (1.59) DIA. MAX.

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

0.3 (0.01) MIN.

Gate terminal for

1.47 (0.06) DIA.
pin receptacle

6.5 (0.26)

4.75 (0.19)

25° ± 5°

42 (1.65) MAX.

28 (1.10)

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95075 For technical questions concerning discrete products, contact: [e-mail]
Revision: 01-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1