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查询ST330C..C SERIES供应商
PHASE CONTROL THYRISTORS Hockey Puk Version
Bulletin I25155 rev. C 04/00
ST330C..C SERIES
Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
Major Ratings and Characteristics
Parameters ST330C..C Units
I
T(AV)
I
T(RMS)
I
TSM
@ T
hs
@ T
hs
@ 50Hz 9000 A
@ 60Hz 9420 A
720 A
55 °C
1420 A
25 °C
720A
case style TO-200AB (E-PUK)
I2t@
V
DRM/VRRM
t
q
T
J
50Hz 405 KA2s
@ 60Hz 370 KA
typical 100 µs
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400 to 1600 V
- 40 to 125 °C
2
s
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ST330C..C Series
Bulletin I25155 rev. C 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code peak and off-state voltage repetitive peak voltage @ T
04 400 500
08 800 900
ST330C..C 12 1200 1300 50
14 1400 1500
16 1600 1700
On-state Conduction
Parameter ST330C..C Units Conditions
I
Max. average on-state current 720 (350) A 180° conduction, half sine wave
T(AV)
@ Heatsink temperature 55 (75) °C double side (single side) cooled
Max. RMS on-state current 1420 DC @ 25°C heatsink temperature double side cooled
I
T(RMS)
I
Max. peak, one-cycle 9000 t = 10ms No voltage
TSM
non-repetitive surge current 9420 A t = 8.3ms reapplied
2
I
t Maximum I2t for fusing 405 t = 10ms No voltage Initial TJ = TJ max.
2
√t Maximum I2√t for fusing 4050 KA2√s t = 0.1 to 10ms, no voltage reapplied
I
V
Low level value of threshold
T(TO)
1
voltage
High level value of threshold
V
T(TO)
2
voltage
Low level value of on-state
r
t1
slope resistance
r
High level value of on-state
t2
slope resistance
Max. on-state voltage 1.96 V Ipk= 1810A, TJ = TJ max, tp = 10ms sine pulse
V
TM
I
Maximum holding current 600
H
I
Typical latching current 1000
L
Switching
Parameter ST330C..C Units Conditions
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current T
t
Typical delay time 1.0
d
t
Typical turn-off time 100
q
, max. repetitive V
, maximum non- I
RSM
DRM/IRRM
VVmA
7570 t = 10ms 100% V
7920 t = 8.3ms reapplied Sinusoidal half wave,
370 t = 8.3ms reapplied
287 t = 10ms 100% V
KA2s
262 t = 8.3ms reapplied
0.91 (16.7% x π x I
V
0.92 (I > π x I
T(AV)
0.58 (16.7% x π x I
mΩ
0.57 (I > π x I
mA
1000 A/µs
µs
T(AV)
= 25°C, anode supply 12V resistive load
T
J
= TJ max, anode voltage ≤ 80% V
J
Gate current 1A, d ig/dt = 1A/µs
= 0.67% V
V
d
I
= 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V
TM
= 20V/µs, Gate 0V 100Ω, tp = 500µs
dv/dt
RRM
RRM
< I < π x I
T(AV)
),TJ = TJ max.
< I < π x I
T(AV)
),TJ = TJ max.
= 25°C
DRM, TJ
), TJ = TJ max.
T(AV)
), TJ = TJ max.
T(AV)
DRM
max.
= TJ max
J
2
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Blocking
Parameter ST330C..C Units Conditions
dv/dt Maximum critical rate of rise of
off-state voltage
I
Max. peak reverse and off-state
RRM
leakage current
I
DRM
500 V /µsTJ = TJ max. linear to 80% rated V
50 m A TJ = TJ max, rated V
Triggering
Parameter ST330C..C Units Conditions
PGMMaximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms
Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50
P
G(AV)
I
Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms
GM
Maximum peak positive
+V
GM
gate voltage
-V
Maximum peak negative
GM
gate voltage
20
5.0
TYP. MAX.
I
DC gate current required
GT
to trigger
200 -
100 200
50 -
2.5 -
V
DC gate voltage required
GT
to trigger
I
DC gate current not to trigger 10 mA
GD
1.8 3.0
1.1 -
VGDDC gate voltage not to trigger 0.25 V
W
V
= TJ max, tp ≤ 5ms
T
J
= - 40°C
T
J
mA T
= 25°C
J
TJ = 125°C
TJ = - 40°C
VTJ = 25°C
= 125°C
T
J
= TJ max
T
J
ST330C..C Series
Bulletin I25155 rev. C 04/00
DRM
applied
DRM/VRRM
Max. required gate trigger/ current/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
anode-to-cathode applied
V
DRM
Thermal and Mechanical Specification
Parameter ST330C..C Units Conditions
Max. operating temperature range -4 0 to 125
T
J
Max. storage temperature range - 40 to 1 50
T
stg
R
Max. thermal resistance, 0.09 DC operation single side cooled
thJ-hs
junction to heatsink 0.04 DC operation double side cooled
Max. thermal resistance, 0.02 DC operation single side cooled
R
thC-hs
case to heatsink 0.01 DC operation double side cooled
F Mounting force, ± 10% 9800 N
(1000) (Kg)
wt Approximate weight 83 g
Case style TO - 200AB (E-PUK) See Outline Table
°C
K/W
K/W
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ST330C..C Series
Bulletin I25155 rev. C 04/00
∆R
Conduction
thJ-hs
(The following table shows the increment of thermal resistence R
Conduction angle Units Conditions
180° 0.012 0.011 0.008 0.007 T
120° 0.014 0.012 0.014 0.013
90° 0.017 0.015 0.019 0.017 K/W
60° 0.025 0.022 0.026 0.023
30° 0.043 0.036 0.043 0.037
Sinusoidal conduction Rectangular conduction
Single Side Double Side Single Side Double Side
Ordering Information Table
Device Code
ST 33 0 C 16 C 1
when devices operate at different conduction angles than DC)
thJ-hs
J
= TJ max.
51 2 3 4
768
1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V
(See Voltage Rating Table)
RRM
6 - C = Puk Case TO-200AB (E-PUK)
7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8 - Critical dv/dt: None = 500V/µsec (Standard selection)
L = 1000V/µsec (Special selection)
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Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.
25.3 (0.99)
DIA. MAX.
25.3 (0.99)
DIA. MAX.
40.5 (1.59) DIA. MAX.
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
0.3 (0.01) MIN.
6.5 (0.26)
4.75 (0.19)
14.1 / 15.1
(0.56 / 0.59)
0.3 (0.01) MIN.
ST330C..C Series
Bulletin I25155 rev. C 04/00
42 (1.65) MAX.
130
120
ST 330 C..C Series
(Single Side Cooled)
R (D C ) = 0.0 9 K/W
thJ-h s
110
100
90
30°
Conduction Angle
60°
90°
120°
80
70
0 50 100 150 200 250 300 350 400
Maximum Allowable Heatsink Temperature (°C)
Average O n-state Current (A)
Fig. 1 - Current Ratings Characteristics
28 (1.10)
180°
25°± 5°
Case Style TO-200AB (E-PUK)
All dimensions in millimeters (inches)
Quote between upper and lower
pole pieces has to be considered
after application of Mounting Force
(see Thermal and Mechanical
Specification)
130
120
110
ST330C ..C Series
(Single Side Cooled)
R (DC) = 0 .09 K/W
thJ-h s
100
90
80
Cond uction P eriod
70
60
50
40
30
20
0 100 200 300 400 500 600 700 800 900
M aximum Allow able Heatsink Tem perature (° C)
30°
60°
90°
120°
180°
Averag e O n-state C urrent (A )
Fig. 2 - Current Ratings Characteristics
DC
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ST330C..C Series
Bulletin I25155 rev. C 04/00
130
120
110
ST330C..C S eries
(Dou ble Sid e Co oled )
R (DC ) = 0.04 K /W
th J-hs
100
90
80
Con duction Ang le
70
60
50
40
30
20
0 200 400 600 800 1000
Maxim um Allow able Heatsin k Temperature (° C)
30°
60°
90°
120°
180°
Average On-state Current (A)
Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics
1400
180°
1200
1000
120°
90°
60°
30°
RMS Limit
800
600
400
Conduction Angle
200
0
Maximum Average On-state Pow er Loss (W)
0 100 200 300 400 500 600 700 800
ST330C..C Series
T = 125°C
J
Average On-state Current (A)
Fig. 5- On-state Power Loss Characteristics
130
120
110
ST330C ..C Se rie s
(Double Side Cooled)
R (DC ) = 0.04 K /W
thJ-h s
100
90
80
70
30°
60
50
40
60°
90°
120°
30
20
10
0 200 400 600 800 1000 1200 1400 1600
M aximum Allowable Heatsink Temperature (°C)
Average O n-state C urrent (A)
1800
1600
1400
1200
1000
DC
180°
120°
90°
60°
30°
RMS Limit
800
600
400
200
0
Maximum Average On-state Power Loss (W)
0 200 400 60 0 80 0 100 0 120 0
Average On-state Current (A)
Fig. 6- On-state Power Loss Characteristics
Conduction Period
180°
DC
Conduction Period
ST330C..C Series
T = 125°C
J
8000
At An y Ra te d L oad Con d ition An d W ith
Rated V Applied Following Surge.
7500
7000
6500
RRM
In iti a l T = 12 5° C
J
@ 60 Hz 0 .0083 s
@ 50 Hz 0 .0100 s
6000
5500
5000
4500
ST330C ..C Series
4000
Peak Half Sine Wave On-state Current (A)
3500
110100
Number O f Equal Amplitude Half Cycle Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
6
9000
M a x im u m N o n Rep e titiv e Surg e C u rre nt
8500
8000
7500
7000
V ersus Pulse Train D ura tion . Con tro l
O f Con ductio n M ay Not Be M ainta ined.
Init ia l T = 1 25 °C
N o Vo lta g e R e a pp lie d
Ra ted V Rea pplied
RRM
6500
6000
5500
5000
4500
ST330C ..C Se rie s
4000
Pe ak Ha lf Sine W ave O n-state Current (A)
3500
0.01 0.1 1
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
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0.1
Steady State Value
R = 0.09 K/W
thJ-h s
(Sing le Side C ooled)
thJ-hs
R = 0.04 K/W
thJ-h s
(D oub le Side Co oled )
(D C O pe ration)
0.01
10000
T = 25°C
J
T = 125°C
J
1000
ST330C..C Series
Ins ta n taneo us O n-state C urr en t (A)
100
01234567
Instantaneous On-state Voltage (V)
Fig. 9 - On-state Voltage Drop Characteristics
ST330C..C Series
Bulletin I25155 rev. C 04/00
0.001
Transien t Therma l Im pe dan c e Z (K/W )
Insta n ta neous G ate Volta ge (V )
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ST330C..C Series
0.001 0.01 0.1 1 10
Squa re W ave P u lse Du ra tion (s)
Fig. 10 - Thermal Impedance Z
100
R e c t a ng ula r g a te p u lse
a ) R e c o m m e nd ed lo a d lin e f o r
ra ted di/dt : 20V , 10oh m s; tr<=1 µ s
b ) R ec o m m e n d e d lo a d lin e f o r
<=3 0% rate d di/dt : 10V , 10ohm s
10
t r <= 1 µ s
(b)
Tj=-40 °C
Tj= 25 °C
1
VGD
IG D
0.1
0.001 0.01 0 .1 1 1 0 1 00
Tj= 125 ° C
Device: ST33 0C..C Serie s
In stanta n e ous Ga te Cu rrent (A )
Characteristics
thJ-hs
(1) PGM = 10W , tp = 4ms
(2) PGM = 20W , tp = 2ms
(3) PGM = 40W , tp = 1ms
(4) PGM = 60W , tp = 0.66ms
(a)
(1)
Frequency Lim ited by PG(AV)
(2) (3)
Fig. 11 - Gate Characteristics
(4)
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