Datasheet ST330C16L3L, ST330C16L3, ST330C16L2L, ST330C16L2, ST330C14L3L Datasheet (International Rectifier)

D-318

DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

650A

PHASE CONTROL THYRISTORS Hockey Puk Version

ST330C..L SERIES

D-319

Bulletin I25154/B

Features

Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
High profile hockey-puk

Typical Applications

DC motor controls
Controlled DC power supplies
AC controllers

I

T(AV)

650 A

@ T

hs

55 °C

I

T(RMS)

1230 A

@ T

hs

25 °C

I

TSM

@ 50Hz 9000 A
@ 60Hz 9420 A

I

2

t @ 50Hz 405 KA2s

@ 60Hz 370 KA

2

s

V

DRM/VRRM

400 to 1600 V

t

q

typical 100 µs

T

J

- 40 to 125 °C

Parameters ST330C..L Units

Major Ratings and Characteristics

case style TO-200AC (B-PUK)

ST330C..L Series

2222222222222

12

D-320

di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs

of turned-on current T

J

= TJ max, anode voltage ≤ 80% V

DRM

Gate current 1A, dig/dt = 1A/µs
V

d

= 0.67% V

DRM, TJ

= 25°C

I

TM

= 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V

dv/dt

= 20V/µs, Gate 0V 100Ω, tp = 500µs

Parameter ST330C..L Units Conditions

Switching

1000 A/µs

t

d

Typical delay time 1.0

t

q

Typical turn-off time 100

µs

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

, max. repetitive V

RSM

, maximum non- I

DRM/IRRM

max.

Type number Code peak and off-state voltage repetitive peak voltage

@ TJ = TJ max

V V mA

04 400 500
08 800 900

ST330C..L 12 1200 1300 50

14 1400 1500
16 1600 1700

I

T(AV)

Max. average on-state current 650 (314) A 180° conduction, half sine wave
@ Heatsink temperature 55 (75) °C double side (single side) cooled

I

T(RMS)

Max. RMS on-state current 1230 DC @ 25°C heatsink temperature double side cooled

I

TSM

Max. peak, one-cycle 9000 t = 10ms No voltage
non-repetitive surge current 9420 A t = 8.3ms reapplied

7570 t = 10ms 100% V

RRM

7920 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 405 t = 10ms No voltage Initial TJ = TJ max.

370 t = 8.3ms reapplied
287 t = 10ms 100% V

RRM

262 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 4050 KA2√s t = 0.1 to 10ms, no voltage reapplied

V

T(TO)

1

Low level value of threshold
voltage

V

T(TO)

2

High level value of threshold
voltage

r

t1

Low level value of on-state
slope resistance

r

t2

High level value of on-state
slope resistance

V

TM

Max. on-state voltage 1.90 V Ipk= 1730A, TJ = TJ max, tp = 10ms sine pulse

I

H

Maximum holding current 600

I

L

Typical latching current 1000

0.91 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

0.57 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

0.57 (I > π x I

T(AV)

),TJ = TJ max.

Parameter ST330C..L Units Conditions

0.93 (I > π x I

T(AV)

),TJ = TJ max.

On-state Conduction

KA2s

V

mΩ

mA T

J

= 25°C, anode supply 12V resistive load

ST330C..L Series

D-324

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 3 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

Fig. 6- On-state Power Loss CharacteristicsFig. 5- On-state Power Loss Characteristics

ST330C..L Series

D-325

Fig. 9 - On-state Voltage Drop Characteristics

Fig. 10 - Thermal Impedance Z

thJ-hs

Characteristics

Fig. 11 - Gate Characteristics

ST330C..L Series

23

D-3213333

TJMax. operating temperature range -40 to 125
T

stg

Max. storage temperature range -40 to 150

R

thJ-hs

Max. thermal resistance, 0.11 DC operation single side cooled
junction to heatsink 0.06 DC operation double side cooled

R

thC-hs

Max. thermal resistance, 0.011 DC operation single side cooled
case to heatsink 0.005 DC operation double side cooled

F Mounting force, ± 10% 9800 N

(1000) (Kg)

wt Approximate weight 250 g

Parameter ST330C..L Units Conditions

K/W

Thermal and Mechanical Specification

°C

Case style TO - 200AC (B-PUK) See Outline Table

K/W

dv/dt Maximum critical rate of rise of

off-state voltage

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Blocking

500 V/µs TJ = TJ max. linear to 80% rated V

DRM

Parameter ST330C..L Units Conditions

50 mA TJ = TJ max, rated V

DRM/VRRM

applied

PGMMaximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms
P

G(AV)

Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50

I

GM

Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

T

J

= - 40°C

mA T

J

= 25°C

T

J

= 125°C

T

J

= - 40°C

V T

J

= 25°C

T

J

= 125°C

I

GD

DC gate current not to trigger 10 mA

Parameter ST330C..L Units Conditions

20

5.0

Triggering

TYP. MAX.

200 ­100 200

50 -

2.5 -

1.8 3.0

1.1 -

VGDDC gate voltage not to trigger 0.25 V

Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V

DRM

anode-to-cathode applied

T

J

= TJ max

Max. required gate trigger/ cur­rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied

V

GT

DC gate voltage required
to trigger

I

GT

DC gate current required
to trigger

W

V T

J

= TJ max, tp ≤ 5ms

ST330C..L Series

2222222222222

12

D-322

1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Rating Table)

6 - L = Puk Case TO-200AC (B-PUK)
7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)

1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)

8 - Critical dv/dt: None = 500V/µsec (Standard selection)

L = 1000V/µsec (Special selection)

Ordering Information Table

Device Code

51 2

3

4

ST 33 0 C 16 L 1

768

Single Side Double Side Single Side Double Side

180° 0.012 0.010 0.008 0.008 T

J

= TJ max.

120° 0.014 0.015 0.014 0.014

90° 0.018 0.018 0.019 0.019 K/W
60° 0.026 0.027 0.027 0.028
30° 0.045 0.046 0.046 0.046

Sinusoidal conduction Rectangular conduction

Conduction angle Units Conditions

∆R

thJ-hs

Conduction

(The following table shows the increment of thermal resistence R

thJ-hs

when devices operate at different conduction angles than DC)

ST330C..L Series

23

D-3233333

Outline Table

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Case Style TO-200AC (B-PUK)

All dimensions in millimeters (inches)

TWO PLACES

PIN RECEPTACLE

AMP. 60598-1

0.7 (0.03) MIN.

34 (1.34) DIA. MAX.

53 (2.09) DIA. MAX.

58.5 (2 .3) D IA. M AX .

2 HOLES DIA. 3.5 (0.14) x

2.5 (0.1) DEEP

4.7 (0.18)

27 (1 .0 6) M AX .

0.7 (0.03) MIN.

6.2 (0.24) MIN.

20°± 5°

36.5 (1.44)

CREPAGE DISTANCE 36.33 (1.430) MIN.

STRIKE DISTANCE 17.43 (0.686) MIN.