Datasheet ST330C16C0L, ST330C16C0, ST330C16C3L, ST330C16C3, ST330C16C2L Datasheet (International Rectifier)

DISCRETE POWER DIODES and THYRISTORS

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D-358

Bulletin I25155/B

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ST330C..C SERIES

PHASE CONTROL THYRISTORS Hockey Puk Version

Features

Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)

Typical Applications

DC motor controls
Controlled DC power supplies
AC controllers

Major Ratings and Characteristics

Parameters ST330C..C Units

I

T(AV)

@ T

hs

I

T(RMS)

@ T

hs

I

TSM

2

I

t @ 50Hz 405 KA2s

@ 50Hz 9000 A
@ 60Hz 9420 A

@ 60Hz 370 KA

720 A

55 °C

1420 A

25 °C

720A

case style TO-200AB (E-PUK)

2

s

V

DRM/VRRM

t

q

T

J

400 to 1600 V

typical 100 µs

- 40 to 125 °C

D-359

ST330C..C Series

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ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

Type number Code peak and off-state voltage repetitive peak voltage

04 400 500
08 800 900

ST330C..C 12 1200 1300 50

14 1400 1500
16 1600 1700

On-state Conduction

Parameter ST330C..C Units Conditions

I

Max. average on-state current 720 (350) A 180° conduction, half sine wave

T(AV)

@ Heatsink temperature 55 (75) °C double side (single side) cooled

I

Max. RMS on-state current 1420 DC @ 25°C heatsink temperature double side cooled

T(RMS)

I

Max. peak, one-cycle 9000 t = 10ms No voltage

TSM

non-repetitive surge current 9420 A t = 8.3ms reapplied

2

I

t Maximum I2t for fusing 405 t = 10ms No voltage Initial TJ = TJ max.

2

I

√t Maximum I2√t for fusing 4050 KA2√s t = 0.1 to 10ms, no voltage reapplied

V

Low level value of threshold

T(TO)

1

voltage

V

High level value of threshold

T(TO)

2

voltage

r

Low level value of on-state

t1

slope resistance

r

High level value of on-state

t2

slope resistance

V

Max. on-state voltage 1.96 V Ipk= 1810A, TJ = TJ max, tp = 10ms sine pulse

TM

I

Maximum holding current 600

H

I

Typical latching current 1000

L

, max. repetitive V

, maximum non- I

RSM

DRM/IRRM

@ TJ = TJ max

V V mA

7570 t = 10ms 100% V
7920 t = 8.3ms reapplied Sinusoidal half wave,

370 t = 8.3ms reapplied
287 t = 10ms 100% V

KA2s

262 t = 8.3ms reapplied

0.91 (16.7% x π x I
V

0.92 (I > π x I

T(AV)

0.58 (16.7% x π x I

mΩ

0.57 (I > π x I

mA

T(AV)

T

= 25°C, anode supply 12V resistive load

J

RRM

RRM

< I < π x I

T(AV)

),TJ = TJ max.

< I < π x I

T(AV)

),TJ = TJ max.

), TJ = TJ max.

T(AV)

), TJ = TJ max.

T(AV)

2222222222222

max.

12

Switching

di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs

t

d

t

q

Parameter ST330C..C Units Conditions

of turned-on current T

1000 A/µs

Typical delay time 1.0

Typical turn-off time 100

= TJ max, anode voltage ≤ 80% V

J

Gate current 1A, dig/dt = 1A/µs

= 0.67% V

V

d

µs

= 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V

I

TM

= 20V/µs, Gate 0V 100Ω, tp = 500µs

dv/dt

D-360

DRM, TJ

DRM

= 25°C

ST330C..C Series

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Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics

Fig. 5- On-state Power Loss Characteristics

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 6- On-state Power Loss Characteristics

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

D-364

Fig. 9 - On-state Voltage Drop Characteristics

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ST330C..C Series

Fig. 10 - Thermal Impedance Z

Fig. 11 - Gate Characteristics

D-365

Characteristics

thJ-hs

Blocking

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Parameter ST330C..C Units Conditions

dv/dt Maximum critical rate of rise of

off-state voltage

I

Max. peak reverse and off-state

RRM

I

leakage current

DRM

500 V/µs TJ = TJ max. linear to 80% rated V

50 mA TJ = TJ max, rated V

Triggering

Parameter ST330C..C Units Conditions

PGMMaximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms
P

Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50

G(AV)

I

Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms

GM

+V

Maximum peak positive

GM

gate voltage

-V

Maximum peak negative

GM

gate voltage

20

5.0

TYP. MAX.

DC gate current required

I

GT

to trigger

200 ­100 200

50 -

2.5 -

V

DC gate voltage required

GT

to trigger

I

DC gate current not to trigger 10 mA

GD

1.8 3.0

1.1 -

VGDDC gate voltage not to trigger 0.25 V

W

V

mA T

V T

T

T

T
T

T

T

= TJ max, tp ≤ 5ms

J

= - 40°C

J

= 25°C

J

= 125°C

J

= - 40°C

J

= 25°C

J

= 125°C

J

= TJ max

J

ST330C..C Series

DRM

DRM/VRRM

Max. required gate trigger/ cur­rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied

Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V

DRM

applied

anode-to-cathode applied

23

Thermal and Mechanical Specification

T

J

T

stg

R

thJ-hs

R

thC-hs

F Mounting force, ± 10% 9800 N

wt Approximate weight 83 g

Parameter ST330C..C Units Conditions

Max. operating temperature range -40 to 125
Max. storage temperature range -40 to 150

Max. thermal resistance, 0.09 DC operation single side cooled
junction to heatsink 0.04 DC operation double side cooled

Max. thermal resistance, 0.02 DC operation single side cooled
case to heatsink 0.01 DC operation double side cooled

(1000) (Kg)

Case style TO - 200AB (E-PUK) See Outline Table

°C

K/W

K/W

D-3613333

ST330C..C Series

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∆R

Conduction

thJ-hs

(The following table shows the increment of thermal resistence R

Conduction angle Units Conditions

180° 0.012 0.011 0.008 0.007 T
120° 0.014 0.012 0.014 0.013

90° 0.017 0.015 0.019 0.017 K/W
60° 0.025 0.022 0.026 0.023
30° 0.043 0.036 0.043 0.037

Sinusoidal conduction Rectangular conduction

Single Side Double Side Single Side Double Side

when devices operate at different conduction angles than DC)

thJ-hs

= TJ max.

J

Ordering Information Table

Device Code

1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V
6 - C = Puk Case TO-200AB (E-PUK)
7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)

1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)

8 - Critical dv/dt: None = 500V/µsec (Standard selection)

ST 33 0 C 16 C 1

3 4

(See Voltage Rating Table)

RRM

L = 1000V/µsec (Special selection)

51 2

12

7

6

8

2222222222222

D-362

Outline Table

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ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.

25.3 (0.99)
DIA. MAX.

25.3 (0.99)
DIA. MAX.

40.5 (1.59) DIA. MAX.

2 HOLES 3.56 (0.14) x

1.83 (0.07) MIN. DEEP

GATE TERM. FOR

1.47 (0.06) DIA.
PIN RECEPTACLE

0.3 (0.01) MIN.

0.3 (0.01) MIN.

6.5 (0.26)

ST330C..C Series

14.1 / 15.1

(0.56 / 0.59)

Case Style TO-200AB (E-PUK)

All dimensions in millimeters (inches)

42 (1.65) MAX.

28 (1.10)

4.75 (0.19)

25°± 5°

23

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

D-3633333