Page 1
Bulletin I25173 rev. C 03/03
ST303S SERIES
INVERTER GRADE THYRISTORS
Features
Center amplifying gate
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters ST303S Units
I
T(AV)
I
T(RMS)
I
TSM
@ T
C
@ 50Hz 7950 A
@ 60Hz 8320 A
300 A
65 °C
471 A
Stud Version
300A
I2t@
V
DRM/VRRM
t
q
T
J
50Hz 316 KA2s
@ 60Hz 288 KA2s
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400 to 1200 V
10 - 20 µs
- 40 to 125 °C
case style
TO-209AE (TO-118)
1
Page 2
ST303S Series
Bulletin I25173 rev. C 03/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code repetitive peak voltage non-repetitive peak voltage @ T
04 400 500
ST303S 50
08 800 900
12 1200 1300
Current Carrying Capability
, maximum V
, maximum I
RSM
DRM/IRRM
VVmA
max.
= TJ max.
J
I
Frequency Units
180
TM
o
el
180oel
I
TM
I
TM
100µs
50Hz 670 470 1050 940 5240 4300
400Hz 480 330 1021 710 1800 1270
1000Hz 230 140 760 470 730 430 A
2500Hz 35 - 150 - 90 Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 40 65 40 65 40 65 °C
Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF
On-state Conduction
Parameter ST303S Units Conditions
I
Max. average on-state current 300 A 180° conduction, half sine wave
T(AV)
@ Case temperature 65 °C
Max. RMS on-state current 47 1 DC @ 45°C case temperature
I
T(RMS)
I
Max. peak, one half cycle, 7950 t = 10ms No voltage
TSM
non-repetitive surge current 8320 A t = 8.3ms reapplied
6690 t = 10ms 100% V
7000 t = 8.3ms reapplied Sinusoidal half wave,
2
I
t Maximum I2t for fusing 316 t = 10ms No voltage Initial TJ = TJ max
288 t = 8.3ms reapplied
224 t = 10ms 100% V
KA2s
204 t = 8.3ms reapplied
2
I
√t Maximum I2√t for fusing 3160 KA2√s t = 0.1 to 10ms, no voltage reapplied
RRM
RRM
V
2
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Page 3
ST303S Series
Bulletin I25173 rev. C 03/03
On-state Conduction
Parameter ST303S Units Conditions
V
Max. peak on-state voltage 2.16 ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse
TM
Low level value of threshold
V
T(TO)1
voltage
High level value of threshold
V
T(TO)2
voltage
r
Low level value of forward
1
t
slope resistance
High level value of forward
r
2
t
slope resistance
I
Maximum holding current 600 TJ = 25°C, IT > 30A
H
Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
I
L
Switching
Parameter ST303S Units Conditions
di/dt Max. non-repetitive rate of rise T
of turned-on current I
t
Typical delay time 0.80
d
t
Max. turn-off time 10 - 20
q
1.44 (16.7% x π x I
1.46 (I > π x I
V
T(AV)
0.57 (16.7% x π x I
mΩ
0.56 (I > π x I
T(AV)
mA
= TJ max, V
1000 A/µs
J
= 2 x di/dt
TM
T
= 25°C, V
J
Resistive load, Gate pulse: 10V, 5Ω source
µs
T
= TJ max, I
J
V
= 50V, tp = 500µs, dv/dt = 200V/µs
R
< I < π x I
T(AV)
T(AV)
), TJ = TJ max.
< I < π x I
T(AV)
T(AV)
), TJ = TJ max.
= rated V
DRM
= rated V
DM
= 550A, commutating di/dt = 40A/µs
TM
DRM
DRM, ITM
), TJ = TJ max.
), TJ = TJ max.
= 50A DC, tp= 1µs
Blocking
Parameter ST303S Units Conditions
dv/dt Maximum critical rate of rise of T
off-state voltage available on request
I
Max. peak reverse and off-state
RRM
leakage current
I
DRM
500 V/µs
50 mA T
Triggering
Parameter ST303S Units Conditions
PGMMaximum peak gate power 60
P
Maximum average gate power 10
G(AV)
I
Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms
GM
+V
Maximum peak positive
GM
gate voltage
Maximum peak negative
-V
GM
gate voltage
I
Max. DC gate current required
GT
to trigger
V
Max. DC gate voltage required
GT
to trigger
I
Max. DC gate current not to trigger 20 mA
GD
V
Max. DC gate voltage not to trigger 0.25 V
GD
20
5
200 mA
3V
WT
VTJ = TJ max, tp ≤ 5ms
T
TJ = TJ max, rated V
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= TJ max, linear to 80% V
J
= TJ max, rated V
J
= TJ max, f = 50Hz, d% = 50
J
= 25°C, VA = 12V, Ra = 6Ω
J
DRM/VRRM
applied
DRM
, higher value
DRM
applied
3
Page 4
ST303S Series
Bulletin I25173 rev. C 03/03
Thermal and Mechanical Specifications
Parameter ST303S Units Conditions
TJMax. junction operating temperature range -40 to 125
Max. storage temperature range -40 to 150
T
stg
Max. thermal resistance, junction to case 0.10 DC operation
R
thJC
R
Max. thermal resistance, case to heatsink 0.03 Mounting surface, smooth, flat and greased
thCS
T Mounting torque, ± 10% 48.5 Nm
(425) (Ibf-in)
wt Approximate weight 535 g
Case style TO-209AE (TO-118) See Outline Table
∆R
Conduction
thJC
(The following table shows the increment of thermal resistence R
thJC
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.011 0.008
120° 0.013 0.014
90° 0.017 0.018 K/W T
60° 0.025 0.026
30° 0.041 0.042
°C
K/W
Non lubricated threads
when devices operate at different conduction angles than DC)
= TJ max.
J
Ordering Information Table
Device Code
ST 30 3 S 12 P F K 0
3
2
1
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - S = Compression bonding Stud
5 - Voltage code: Code x 100 = V
(See Voltage Ratings table)
RRM
6 - P = Stud base 3/4" 16UNF-2A
7 - Reapplied dv/dt code (for tq test condition)
8 -tq code
9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
4
4
5
7
6
8 9
dv/dt - tq combinations available
dv/dt (V/µs) 200
t
(µs) 10 FN
q
up to 800V 20 FK
t
(µs)
q
only for 20 FK
1000/1200V
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Page 5
Outline Table
CERAMIC HOUSING
22 (0.87) MAX.
RED SILICON RUBBER
38 (1.50)
MAX. DIA.
245 (9.65)
255 (10.04)
RED SHRINK
MAX.
27.5 (1 . 0 8)
49 (1.92) MAX.
* FOR METRIC DEVICE: M24 X 1.5 - LENGHT 21 (0.83) MAX.
CONTACT FACTORY
4.3 (0.17) DIA.
10.5 (0.41)
NOM.
RED CATHODE
WHITE SHRINK
SW 45
3/4"16 UNF-2A
ST303S Series
Bulletin I25173 rev. C 03/03
4.5 (0.18) MAX.
WHITE GATE
FLEXIBLE LEAD
245 (9.6 5) ± 10 (0.39)
MAX.
47 (1.85)
21 (0.82) MAX.
C.S. 50mm
(0.078 s.i.)
2
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
.
N
I
M
)
7
3
.
0
(
5
.
9
.
N
I
M
)
6
8
.
0
(
2
2
Fast-on Terminals
AMP. 280000-1
REF-250
130
120
ST303S Series
R (DC) = 0.10 K /W
thJC
110
100
90
30°
80
Conduction Angle
60°
90°
70
60
Maximum Al lo w able C ase Tempe ratur e (° C )
0 50 100 150 200 250 300 350
Average On- state Cur rent (A )
Fig. 1 - Current Ratings Characteristics
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120°
180°
130
120
ST303S S eries
R (DC) = 0.10 K /W
thJC
110
100
90
Conduction Period
80
70
60
50
40
Maximum All owable Case Temperature (°C)
0 100 200 300 400 500
30°
60°
90°
120°
180°
Ave rage On- state Current (A)
Fig. 2 - Current Ratings Characteristics
DC
5
Page 6
ST303S Series
Bulletin I25173 rev. C 03/03
600
500
180°
120°
90°
400
300
200
100
0
Maxi mu m A v erage On-state Power Los s (W)
0 50 100 150 200 250 300
60°
30°
RMS Li m it
Conduction Angle
ST30 3 S Se r ie s
T = 125°C
J
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
900
800
700
600
500
DC
180°
120°
90°
60°
30°
400
RMS Li m it
300
200
100
0
Maxi mu m A v erage On-state Power Los s (W)
0 50 100 150 200 250 300 350 400 450 500
Conduction Peri od
ST303S Series
T = 125°C
J
Average On-state Curr e nt ( A )
Fig. 4 - On-state Power Loss Characteristics
R
0
.
0
3
t
h
K
S
0
.
0
6
0
.
0
8
0
.
12
0
.
1
6
K
0
.
2
K
0
.
3
K
0
.
5
K
A
/
W
=
K
K
/
W
K
/
/
W
/
W
/
/
0
/
W
W
W
W
.
0
1
K
/
W
-
D
e
l
t
a
R
25 50 75 100 125
Max imum A llowable A mbient Temperature ( °C)
R
t
h
S
A
=
0
0
.
0
.
0
3
1
K
K
/
W
/
0
.
0
.
0
.
0
.
0
W
0
6
1
2
2
K
3
.
5
-
K
K
K
K
D
/
W
/
/
W
/
W
/
e
l
t
a
R
W
W
25 50 75 100 125
Maximu m All owable A m bient Temperature (°C)
7000
At Any Rated Load Condition And With
Rated V Applied F ollowing Sur ge.
6500
6000
RRM
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
5500
5000
4500
4000
ST303S Series
3500
Peak Half Sine Wave On-state Current (A)
3000
110100
Number Of Equal Amplitude Half Cycle Cur rent Pulses (N )
8000
Maximum Non Repetitiv e Su rge C urren t
7500
7000
6500
6000
Versus Pul se Trai n Durati on . Control
Of Condu ction M ay Not Be Maintai n ed.
N o Voltage Reappli e d
Rated V Reapplied
5500
5000
4500
4000
ST303S Series
3500
Peak Half S ine Wave On-state Current (A)
3000
0.01 0.1 1
Pu lse Train Du rati on ( s)
Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current
6
Initial T = 125°C
J
RRM
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Page 7
ST303S Series
Bulletin I25173 rev. C 03/03
10000
1
St e a d y St a t e V a lu e
R = 0 .1 0 K/W
thJC
thJC
(DC Operation)
0.1
1000
T = 2 5° C
J
T = 125°C
J
0.01
ST303S Series
ST303 S Se r ie s
Instantaneous On-state Current (A)
100
12345678
Instantan e o us On-s tat e Voltage (V)
Fig. 7 - On-state Voltage Drop Characteristics
320
300
280
260
I = 500 A
TM
300 A
200 A
100 A
50 A
240
220
200
180
160
140
120
ST303S Series
T = 125 °C
J
100
80
10 20 30 40 50 60 70 80 90 100
Ma x im u m Re ve rse Re c ove r y C h a rg e - Qrr ( µC)
Rate Of Fall O f O n -state Cu rren t - di/dt (A/µs)
0.001
Tr ansi ent Thermal Impedance Z (K/W)
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s )
Fig. 8 - Thermal Impedance Z
180
160
140
I = 500 A
TM
300 A
200 A
100 A
50 A
Characteristic
thJC
120
100
80
60
ST303S Series
T = 125 °C
J
40
20
Maximum Reverse Recovery Current - Irr (A)
10 20 30 40 50 60 70 80 90 100
Rate Of F all Of On-state Current - di/dt (A/µs)
Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics
1E4
100
200
400
500
2000
1500
1000
tp
Snubb er c ircuit
R = 1 0 o hm s
s
C = 0 .47 µ F
s
V = 80% V
D
ST3 0 3 S Se r i e s
Sinus oidal puls e
T = 40°C
C
1E3
1E2
2500
Pea k On-sta te Current (A)
1E1
1E 1 1E 2 1E 3 1E 4
Pulse Basew idt h ( µs)
Fig. 11 - Frequency Characteristics
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50 Hz
400
500
1000
1500
DRM
tp
1E1
1E 1 1E 2 1E3 1E4
1E4
Pulse Basewid th ( µs)
50 Hz
100
200
Snubber circuit
R = 10 o h m s
s
C = 0.47 µF
s
V = 80% V
D
ST30 3S Se r i e s
Sinusoi dal pulse
T = 6 5 °C
C
DRM
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Page 8
ST303S Series
Bulletin I25173 rev. C 03/03
1E4
1E3
1E2
1E1
Peak On -state Cur rent ( A )
1E0
1E1 1E2 1E3 1E4
1500
2000
2500
1000
500
100
200
400
Snubber circuit
R = 10 ohms
s
C = 0. 47 µ F
s
V = 80% V
D
ST30 3 S Se ri e s
Trapezoidal pulse
T = 4 0° C
C
di/dt = 50A/µs
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
1E4
50 Hz
100
1E3
1000
1E2
1E1
Peak On -state Cur rent ( A )
1E0
1E1 1E2 1E3 1E4
1500
2000
2500
500
200
400
ST30 3 S Se ri e s
Trapezoidal puls e
T = 4 0° C
C
tp
di/dt = 100A/µs
Snubb e r c ircuit
R = 10 o hm s
s
C = 0.47 µF
s
V = 80% V
D
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
50 Hz
1000
DRM
1E 4
1E1
1E 1 1E 2 1E 3 1E4
1500
2000
500
400
200
Pu lse Basewidth (µs)
200
400
500
1000
1500
DRM
2000
tp
1E1
1E 4
1E 1 1E2 1E 3 1E4
Pulse Basewid th (µs)
50 Hz
100
Snu b b e r c i r c u i t
R = 10 ohms
s
C = 0.47 µF
s
V = 8 0 % V
ST3 0 3 S Se r i e s
Trapezoidal pul se
T = 65°C
C
di/dt = 50A/µs
100
Snu b b e r c i rc u i t
R = 10 o h m s
C = 0.47 µF
V = 80% V
ST303S Se ries
Tr ape zoidal pul se
T = 6 5° C
C
di/ dt = 100A/µs
DRM
D
50 Hz
s
s
DRM
D
1E5
1E4
2
0.5
0.4
tp
1
ST30 3S Se r i e s
Sin u soi dal pulse
1E3
1E2
Peak On - state Current (A)
1E1
1E1 1E2 1E 3 1E 4
10
5
3
20 joules per pulse
Pulse Basew id th (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
8
ST303S Se r ie s
R ectangular pulse
tp
di / dt = 50A/µs
20 joules per p ulse
10
5
3
2
1
0.5
0.4
1E 1
1E 4
1E1 1E2 1E3 1E 4
Pulse Ba sew id th (µs)
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Page 9
Bulletin I25173 rev. C 03/03
100
Rectangu lar gate puls e
a) Recomm e nded load line f o r
rated di/dt : 20V, 10 ohms; tr<=1 µs
b) Recomme n de d load line for
<=30 % rated di/dt : 10V, 10ohms
10
tr<=1 µs
1
I nstantaneous Gate Vol tage (V)
0.1
0.001 0.01 0.1 1 10 100
VGD
IGD
Device: S T303S Series
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
(b)
Tj= - 40 ° C
Tj= 2 5 ° C
Tj= 1 25 °C
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(a)
Fr equency Limi ted by PG( A V)
(1)
(2)
ST303S Series
(3)
(4)
This product has been designed and qualified for Industrial Level.
Data and specifications subject to change without notice.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03 /03
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