Datasheet ST303S12PFN3L, ST303S12PFN3, ST303S12PFN1, ST303S12PFN0L, ST303S12PFN0 Datasheet (International Rectifier)
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D-490
DISCRETE POWER DIODES and THYRISTORS
DATA BOOK
Page 2
ST303S SERIES
INVERTER GRADE THYRISTORS
Stud Version
300A
D-491
Bulletin I25173/B
Features
All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
I
T(AV)
300 A
@ T
C
65 °C
I
T(RMS)
471 A
I
TSM
@ 50Hz 7950 A
@ 60Hz 8320 A
I
2
t @ 50Hz 316 KA2s
@ 60Hz 288 KA
2
s
V
DRM/VRRM
400 to 1200 V
t
q
range (*) 10 to 30 µs
T
J
- 40 to 125 °C
Parameters ST303S Units
Major Ratings and Characteristics
(*) tq = 10 to 20µs for 400 to 800V devices
t
q
= 15 to 30µs for 1000 to 1200V devices
case style
TO-209AE (TO-118)
Page 3
ST303S Series
D-492
ST303S 50
Voltage V
DRM/VRRM
, maximum V
RSM
, maximum I
DRM/IRRM
max.
Type number Code repetitive peak voltage non-repetitive peak voltage
@ TJ = TJ max.
V V mA
04 400 500
08 800 900
10 1000 1100
12 1200 1300
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Frequency Units
50Hz 670 470 1050 940 5240 4300
400Hz 480 330 1021 710 1800 1270
1000Hz 230 140 760 470 730 430 A
2500Hz 35 - 150 - 90 Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 40 65 40 65 40 65 °C
Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF
I
TM
180oel
180
o
el
100µs
I
TM
I
TM
Current Carrying Capability
V
I
T(AV)
Max. average on-state current 300 A 180° conduction, half sine wave
@ Case temperature 65 °C
I
T(RMS)
Max. RMS on-state current 471 DC @ 45°C case temperature
I
TSM
Max. peak, one half cycle, 7950 t = 10ms No voltage
non-repetitive surge current 8320 A t = 8.3ms reapplied
6690 t = 10ms 100% V
RRM
7000 t = 8.3ms reapplied Sinusoidal half wave,
I
2
t Maximum I2t for fusing 316 t = 10ms No voltage Initial TJ = TJ max
288 t = 8.3ms reapplied
224 t = 10ms 100% V
RRM
204 t = 8.3ms reapplied
I
2
√t Maximum I2√t for fusing 3160 KA2√s t = 0.1 to 10ms, no voltage reapplied
Parameter ST303S Units Conditions
On-state Conduction
KA2s
Page 4
ST303S Series
D-496
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Page 5
ST303S Series
D-497
Fig. 8 - Thermal Impedance Z
thJC
Characteristic
Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current
Page 6
ST303S Series
D-498
Fig. 13 - Frequency Characteristics
Fig. 12 - Frequency Characteristics
Fig. 11 - Frequency Characteristics
Page 7
ST303S Series
D-499
Fig. 15 - Gate Characteristics
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
Page 8
ST303S Series
D-493
VTMMax. peak on-state voltage 2.16 ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
Low level value of forward
slope resistance
r
t
2
High level value of forward
slope resistance
I
H
Maximum holding current 600 TJ = 25°C, IT > 30A
I
L
Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
Parameter ST303S Units Conditions
On-state Conduction
1.44 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
1.46 (I > π x I
T(AV)
), TJ = TJ max.
V
0.57 (16.7% x π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ max.
0.56 (I > π x I
T(AV)
), TJ = TJ max.
mΩ
mA
di/dt Max. non-repetitive rate of rise T
J
= TJ max, V
DRM
= rated V
DRM
of turned-on current I
TM
= 2 x di/dt
T
J
= 25°C, V
DM
= rated V
DRM, ITM
= 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T
J
= TJ max, I
TM
= 550A, commutating di/dt = 40A/µs
V
R
= 50V, tp = 500µs, dv/dt: see table in device code
Switching
Parameter ST303S Units Conditions
1000 A/µs
t
d
Typical delay time 0.80
µs
Min Max
dv/dt Maximum critical rate of rise of T
J
= TJ max, linear to 80% V
DRM
, higher value
off-state voltage available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter ST303S Units Conditions
Blocking
500 V/µs
50 mA T
J
= TJ max, rated V
DRM/VRRM
applied
PGMMaximum peak gate power 60
P
G(AV)
Maximum average gate power 10
I
GM
Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger 20 mA
V
GD
Max. DC gate voltage not to trigger 0.25 V
Triggering
Parameter ST303S Units Conditions
20
5
V TJ = TJ max, tp ≤ 5ms
200 mA
3 V
T
J
= 25°C, VA = 12V, Ra = 6Ω
TJ = TJ max, rated V
DRM
applied
(*) t
q
= 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices.
t
q
Max. turn-off time (*) 10 30
W TJ = TJ max, f = 50Hz, d% = 50
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ST303S Series
D-494
TJMax. junction operating temperature range -40 to 125
T
stg
Max. storage temperature range -40 to 150
R
thJC
Max. thermal resistance, junction to case 0.10 DC operation
R
thCS
Max. thermal resistance, case to heatsink 0.03 Mounting surface, smooth, flat and greased
T Mounting torque, ± 10% 48.5 Nm
(425) (Ibf-in)
wt Approximate weight 535 g
Case style TO-209AE (TO-118) See Outline Table
Parameter ST303S Units Conditions
Thermal and Mechanical Specifications
°C
K/W
Non lubricated threads
∆R
thJC
Conduction
(The following table shows the increment of thermal resistence R
thJC
when devices operate at different conduction angles than DC)
Ordering Information Table
5 6 8 9
ST 30 3 S 12 P F N 0
3 4 7
Device Code
1
2 10
180° 0.011 0.008
120° 0.013 0.014
90° 0.017 0.018 K/W T
J
= TJ max.
60° 0.025 0.026
30° 0.041 0.042
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - S = Compression bonding Stud
5 - Voltage code: Code x 100 = V
RRM
(See Voltage Ratings table)
6 - P = Stud base 3/4" 16UNF-2A
M = Stud base metric threads M24 x 1.5
7 - Reapplied dv/dt code (for t
q
test condition)
8 - t
q
code
9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
3 = Threaded top terminal 3/8" 24UNF-2A
- Critical dv/dt:
None= 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)
only for
1000/1200V
dv/dt - tq combinations available
dv/dt (V/µs) 20 50 100 200 400
t
q
(µs) 10 CN DN EN FN * HN
12 CM DM EM FM HM
15 CL DL EL FL * HL
20 CK DK EK FK * HK
t
q
(µs) 15 CL -- -- -- --
18 CP DP -- -- -20 CK DK EK FK * HK
25 CJ DJ EJ FJ * HJ
30 -- DH EH FH HH
up to 800V
*Standard part number.
All other types available only on request.
10
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ST303S Series
D-495
Outline Table
Case Style TO-209AE (TO-118)
with top thread terminal 3/8"
All dimensions in millimeters (inches)
RED CATHODE
RED SILICON RUBBER
10.5 (0.41)
24 5 (9.65 ) ± 1 0 (0.39)
WHITE GATE
4.3 (0.17) DIA.
CERAMIC HOUSING
WHITE SHRINK
NOM.
47 (1.85)
MAX .
245 (9 .6 5)
38 (1.50)
MAX. DIA.
* FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) MAX.
22 (0.87) MAX.
MAX .
21 (0.82) MAX .
SW 45
2
FLEXIBLE LEAD
4.5 (0.18) MAX.
C.S. 50mm
(0.078 s.i.)
25 5 (1 0.04)
RED SHRINK
2
2
(
0
.
8
6
)
M
I
N
.
49 (1.92) MAX.
3/4"16 UNF-2A
2 7.5 (1.08)
9
.
5
(
0
.
3
7
)
M
I
N
.
Fast-on Terminals
Case Style TO-209AE (TO-118)
All dimensions in millimeters (inches)
47 (1 .85)
27. 5 (1.0 8 )
77.5 (3.05 )
80.5 (3.17 )
38 (1.5)
DIA. MAX.
M A X.
M A X.
M A X .
CERAMIC HOUSING
SW 45
* FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) MAX.
21 (0 .8 3 )
3/4"-16UNF-2A *
25 (0 .98)
3/8"-24UNF-2A
17 (0.67) DIA.
AMP. 280000-1
REF-250
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