Datasheet ST303C12LFK1 Specification

www.vishay.com

B-PUK (TO-200AC)

Inverter Grade Thyristors

(Hockey PUK Version), 515 A

PRIMARY CHARACTERISTICS

Package B-PUK (TO-200AC)

Circuit configuration Single SCR

I

T(AV)

V

DRM/VRRM

V

TM

I

at 50 Hz 7950 A

TSM

I

at 60 Hz 8320 A

TSM

I

GT

T

C/Ths

400 V, 800 V, 1000 V, 1200 V

515 A

2.16 V

200 mA

55 °C

VS-ST303CL Series

Vishay Semiconductors

FEATURES

• Metal case with ceramic insulator

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

• Guaranteed high dI/dt

• International standard case B-PUK (TO-200AC)

• High surge current capability

• Low thermal impedance

• High speed performance

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

•Inverters

• Choppers

• Induction heating

• All types of force-commutated converters




MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

Note

= 10 μs to 20 μs for 400 V to 800 V devices

•t

q

t

= 15 μs to 30 μs for 1000 V to 1200 V devices

q

Revision: 13-Sep-17

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

515 A

T

hs

T

hs

50 Hz 7950

60 Hz 8320

50 Hz 316

60 Hz 289

Range 10 to 30 μs

1

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

55 °C

995 A

25 °C

400 to 1200 V

-40 to 125 °C

, [e-mail], [e-mail]

A

kA2s

Document Number: 94374

VS-ST303CL Series

100 µs

I

TM

www.vishay.com

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

VS-ST303C..L

VOLTAGE

CODE

V

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

V

04 400 500

08 800 900

10 1000 1100

12 1200 1300

V

RSM

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 1130 950 1800 1540 5660 4990

400 Hz 1010 820 1850 1570 2830 2420

1000 Hz 680 530 1560 1300 1490 1220

2500 Hz 230 140 690 510 540 390

Recovery voltage V

R

Voltage before turn-on V

D

50 50 50

V

DRM

Rise of on-state current dI/dt 50 - - A/μs

Heatsink temperature 405540554055°C
Equivalent values for RC circuit 10/0.47 10/0.47 10/0.47 /μF

V

DRM

I

TM

Vishay Semiconductors

, MAXIMUM

V

V

DRM

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

MAXIMUM

mA

50

A

V

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state 
current at heatsink temperature

Maximum RMS on-state current I

T(RMS)

Maximum peak, one half cycle, 
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 3160 kA2s

Maximum peak on-state voltage V

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope
resistance

High level value of forward slope
resistance

Maximum holding current I

Typical latching current I

I

T(AV)

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 995

I

TSM

TM

T(TO)1

T(TO)2

r

t1

r

t2

H

L

t = 10 ms

t = 8.3 ms 8320

t = 10 ms

t = 8.3 ms 7000

t = 10 ms

t = 8.3 ms 289

t = 10 ms

t = 8.3 ms 204

ITM = 1255 A, TJ = TJ maximum, 
t

= 10 ms sine wave pulse

p

(16.7 % x  x I
(I >  x I

(16.7 % x  x I

(I >  x I

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000

No voltage
reapplied

100 % V
reapplied

No voltage

RRM 

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V
reapplied

T(AV)

), TJ = TJ maximum 1.48

T(AV)

T(AV)

), TJ = TJ maximum 0.56

T(AV)

RRM 

< I <  x I

< I <  x I

), TJ = TJ maximum 1.44

T(AV)

), TJ = TJ maximum 0.57

T(AV)

515 (190) A

55 (85) °C

7950

6690

316

224

kA

2.16

m

mA

A

2

V

s

Revision: 13-Sep-17

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

2

, [e-mail], [e-mail]

Document Number: 94374

VS-ST303CL Series

www.vishay.com

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned on current

Typical delay time t

minimum

Maximum turn-off time

(1)

maximum 30

dI/dt

d

t

q

T

= TJ maximum, V

J

I

= 2 x dI/dt

TM

TJ = 25 °C, VDM = Rated V
Resistive load, gate pulse: 10 V, 5  source

= rated V

DRM

DRM

, ITM = 50 A DC, tp = 1 μs

DRM

TJ = TJ maximum, 
I

= 550 A, commutating dI/dt = 40 A/μs

TM

V

= 50 V, tp = 500 μs, dV/dt: See table in device code

R

Note

(1)

tq = 10 μs to 20 μs for 400 V to 800 V devices; tq = 15 μs to 30 μs for 1000 V to 1200 V devices

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

T

= TJ maximum, linear to 80 % V

Maximum critical rate of rise of off-state voltage dV/dt

Maximum peak reverse and off-state leakage
current

I

RRM

I

DRM

,

J

higher value available on request

TJ = TJ maximum, rated V

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate current required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp  5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 

TJ = TJ maximum, rated V

Vishay Semiconductors



DRM/VRRM

DRM

, 

DRM

applied 50 mA

applied

1000 A/μs

0.83

10

500 V/μs

60

10

10 A

20

5

200 mA

3V

20 mA

0.25 V

μs

W

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.11

DC operation double side cooled 0.05

DC operation single side cooled 0.011

DC operation double side cooled 0.005

Mounting force, ± 10 %

Approximate weight 250 g

Case style See dimensions - link at the end of datasheet B-PUK (TO-200AC)

Revision: 13-Sep-17

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

3

, [e-mail], [e-mail]

-40 to 125

-40 to 150

9800

(1000)

Document Number: 94374

°C

K/W

N

(kg)

www.vishay.com

20

30

40

50

60

70

80

90

100

110

120

130

0 100 200 300 400 500 600

DC

30°

60°

90°

120°

180°

Average On-state Current (A)

Conduction Period

Maximum Allowable Heatsink Temperature (°C)

ST303C..L Se ries
(Single Side Cooled)
R (DC) = 0.11 K/W

thJ-hs

30

40

50

60

70

80

90

100

110

120

130

0 100 200 300 400 500 600 700

30°

60°

90°

120°

180°

Average On-state Current (A)

Cond uction Ang le

Maximum Allowable Heatsink Temperature (°C)

ST3 0 3 C . . L Se r i e s
(Double Side Cooled)
R (DC) = 0.05 K/ W

thJ-hs

)

VS-ST303CL Series

Vishay Semiconductors

R

CONDUCTION

thJ-hs

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.012 0.010 0.008 0.008

120° 0.014 0.015 0.014 0.014

90° 0.018 0.018 0.019 0.019

60° 0.026 0.027 0.027 0.028

30° 0.045 0.046 0.046 0.046

Note

• The table above shows the increment of thermal resistance R

130

120

110

100

90

80

70

60

50

40

0 50 100150200250300350

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

ST3 0 3C . .L Se ri e s
(Single Side Cooled)
R (DC ) = 0.11 K/ W

thJ-hs

Conduction Angle

30°

60°

90°

120°

180°

TEST CONDITIONS UNITS

T

= TJ maximum K/W

J

when devices operate at different conduction angles than DC

thJ-hs

Fig. 1 - Current Ratings Characteristics

Fig. 2 - Current Ratings Characteristics

Revision: 13-Sep-17

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

Maximum Allowable Heatsink Temperature (°C

30°

0 200 400 600 800 1000 1200

Average On-state Current (A)

ST3 0 3 C . . L Se r ie s
(Doub le Side Cooled )
R ( DC) = 0.05 K/ W

thJ-hs

60°

90°

120°

Fig. 4 - Current Ratings Characteristics

4

, [e-mail], [e-mail]

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Conduction Period

180°

DC

Document Number: 94374

www.vishay.com

0

200

400

600

800

1000

1200

1400

1600

1800

2000

0 100 200 300 400 500 600 700 800

180°
120°

90°
60°
30°

RM S Li m it

Cond uction Ang le

Maximum Average On-sta te Power Loss (W)

Average On-state Current (A)

ST303C..L Se ries
T = 12 5° C

J

3000

3500

4000

4500

5000

5500

6000

6500

7000

110100

Number Of Eq ual Amplitude Half Cycle Current Pulses (N)

Peak Half Sine Wave On-state Curre nt (A)

Initial T = 125°C

at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

J

ST303C..L Se rie s

At Any Rate d Loa d Co nd ition And With

Rated V Applied Following Surge.

RRM

3000

3500

4000

4500

5000

5500

6000

6500

7000

7500

8000

0.01 0.1 1

Pulse Train Duration (s)

Versus Pulse Train Dura tion. Control

Of Conduction May Not Be Maintained.

Peak Half Sine Wave On-state Current (A)

Init ia l T = 125°C

No Vo lt a g e Rea pp lied

Ra t e d V Re a p p l i e d

RRM

J

ST3 03 C . . L Se r i e s

Maximum Non Repetitive Surge Current

VS-ST303CL Series

Vishay Semiconductors

Fig. 5 - On-State Power Loss Characteristics

2600

2400

2200

2000

1800

1600

1400

1200

1000

800

600

400

200

Maximum Average On-sta te Power Loss (W)

DC
180°
120°

90°

60°

30°

RM S Li m i t

Conduction Period

ST3 0 3 C . . L Se r i e s
T = 1 2 5 °C

J

0

0 200 400 600 800 1000 1200

Average On-state Current (A)

Fig. 6 - On-state Power Loss Characteristics

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

10000

1000

Instantaneous On-state Current (A)

100

012345678

Instantaneous On-state Voltage (V)

T = 25 °C

J

T = 125°C

J

ST30 3 C .. L Se r i e s

Fig. 9 - On-state Voltage Drop Characteristics

1

Steady State Value

R = 0.11 K/ W

thJ-hs

(Single Side Cooled)

thJ-hs

R = 0.05 K/ W

thJ-hs

0.1
(Double Side Cooled)

(DC Operation)

Fig. 7 - Maximum Non-Repetitive Surge Current

Revision: 13-Sep-17

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Single and Double Side Cooled

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

0.01

ST3 0 3 C . . L Se r i e s

0.001

Tra n si e n t Th e rm a l I m p e d a n c e Z ( K/ W )

0.001 0.01 0.1 1 10

Sq u a r e W a v e Pu l se D u r a t i o n ( s)

Fig. 10 - Thermal Impedance Z

5

Characteristics

thJ-hs

Document Number: 94374

, [e-mail], [e-mail]

www.vishay.com

30

40

50

60

70

80

90

100

110

120

130

140

150

160

170

180

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Rec overy Current - Irr (A)

Rate Of Fall Of Forward Current - di/dt (A/µs)

200 A

ST3 03 C . .L Se r i e s
T = 1 2 5 ° C

J

I = 1000 A

TM

500 A

300 A

100 A

1E2

1E3

1E4

1E11E21E31E

50 Hz

400

2500

100

Pu l se Ba se w i d t h ( µs)

Peak On-state Curre nt (A)

1000

1500

3000

200

500

ST303C..L Series
Si n u so i d a l p u l s e
T = 40 ° C

C

2000

Snub b er c irc uit
R = 10 o h m s
C = 0.47 µF
V = 80% V

s
s

D

DRM

tp

1E1

1E2

1E3

1E4

1E1 1E2 1E3 1E4

50 Hz

400

2500

100

1000

1500

2000

3000

200

500

Pu lse Ba se w id t h ( µs)

Pe a k O n -st a t e C ur re nt ( A )

Sn u b b e r c i r c u i t
R = 1 0 o h m s
C = 0.47 µF
V = 80% V

s
s
D

DRM

ST3 03 C . . L Se r i e s
Trapezoidal pulse
T = 40 ° C
di/dt = 50A/µs

C

tp

VS-ST303CL Series

Vishay Semiconductors

320

300

280

260

240

220

I = 1000 A

TM

500 A

300 A

200 A

100 A

200

180

160

140

120

100

80

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Recovery Charge - Qrr (µC)

Rate Of Fall Of On-state Current - di/dt (A/µs)

ST303C..L Serie s
T = 125 °C

J

Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics

100

200

400

500

1000

1500

2000

2500

3000

1E1

1E1 1E2 1E3 1 E4

Pu l se Ba se w i d t h ( µs)

tp

Sn u b b e r c i r c u i t
R = 10 o h ms

s

C = 0.47 µF

s

V = 80% V

D

ST3 03 C . . L Se r i e s
Si n u so i d a l p u l se
T = 5 5 ° C

C

50 Hz

DRM

Revision: 13-Sep-17

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 13 - Frequency Characteristics

Snub b er c irc uit
R = 10 o h m s
C = 0.47 µF
V = 80% V

1E1 1E2 1E3 1E4

Fig. 14 - Frequency Characteristics

6

, [e-mail], [e-mail]

s
s
D

3000

DRM

2500

2000

1500

1000

400

500

ST3 03 C . . L Se r i e s
Trapezoidal pulse
T = 55°C

tp

di/dt = 50A/µs

200

C

100

50 Hz

Pu lse Ba se w i d t h ( µs)

Document Number: 94374

www.vishay.com

1E1

1E2

1E3

1E4

1E5

1E1 1E2 1E3 1E4

Pul se Ba sew id th ( µs)

20 joules per pulse

2

1

0.5

10

5

Peak On-stat e C urre nt (A)

3

ST3 03 C . . L Se r ie s
Si n u so i d a l p u l se

0.4

tp

0.1

1

10

100

0.001 0. 01 0.1 1 10 100

VGD

IGD

(b)

(a)

Tj=25 °C

T
j=125 °C

T
j=-40 °C

(1)

(2)

Instantaneous Gate Current

(A)

Instantaneous Gate Voltage (V)

Rec tangular gate pulse
a) Recommended load line for

b) Recommended load line for

<=30% ra ted di / dt : 10V, 10o hms

rated di/ dt : 20V, 10ohms; tr<=1 µs

tr<=1 µs

(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, t p = 5ms
(4) PGM = 60W, t p = 3. 3ms

(3)

De vi ce : ST303C. .L Series Freq uency Limite d by PG(AV)

(4)

VS-ST303CL Series

Vishay Semiconductors

1E4

Snub b er c irc ui t
R = 10 o h ms

s

C = 0.47 µF

s

Pe a k O n -st a te Curr e nt ( A )

1E3

1E2

V = 80% V

D

3000

2500

DRM

2000

1500

1000

500

tp

100

200

400

ST3 03 C . . L Se r i e s
Tra pezoid al p ulse
T = 40°C

C

di/ dt = 100A/ µs

1E1

1E1 1E2 1E3 1E4

Pu lse Ba se w i d t h ( µs)

Snub ber circuit
R = 1 0 o h m s

s

C = 0.47 µF

s

V = 80% V

50 Hz

D

1E1 1E2 1E3 1E4

Fig. 15 - Frequency Characteristics

DRM

2500

3000

ST3 03 C . . L Se r i e s
Rectangular pulse

di/dt = 50A/µs

tp

1000

1500

2000

Pu lse Ba se w id t h ( µs)

1

0.5

0.4

500

400

tp

10

5

3

2

50 Hz

100

200

ST303C..L Se ries
Trapezoidal pulse
T = 55 ° C

C

di/dt = 100A/µs

20 jo ule s per p ulse

Fig. 16 - Maximum On-State Energy Power Loss Characteristics

Revision: 13-Sep-17

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 17 - Gate Characteristics

1E1 1E2 1E3 1E4

1E1

Pu l se Ba se w id t h ( µs)

7

Document Number: 94374

, [e-mail], [e-mail]

www.vishay.com

ORDERING INFORMATION TABLE

VS-ST303CL Series

Vishay Semiconductors

Device code

STVS- 30 3 C12L H K 1 -

51 32 4 6 7 8 9 10 11

1 -

2

3

4

5

6

7

8

9

10

11

Vishay Semiconductors product

- Thyristor

-Essential part number

- 3 = fast turn-off

- C = ceramic PUK

- Voltage code x 100 = V

RRM

(see Voltage Ratings table)

- C = PUK case B-PUK (TO-200AC)

- Reapplied dV/dt code (for tq test condition)

-tq code

- 0 = eyelet terminals
(gate and auxiliary cathode unsoldered leads)

1 = fast-on terminals

(gate and auxiliary cathode unsoldered leads)

2 = eyelet terminals

(gate and auxiliary cathode soldered leads)

3 = fast-on terminals

(gate and auxiliary cathode soldered leads)

- Critical dV/dt:

None = 500 V/μs (standard value)

L = 1000 V/μs (special selection)

dV/dt - tq combinations available

dV/dt (V/µs) 20 50 100 200 400

t

(µs)

q

up to 800 V

t

(µs)

q

only for
1000 V/1200 V

CN DN EN

10

CM DM EM FM HM

12

CL DL EL FL* HL

15

CK DK EK FK* HK

20

CL - -

15

CP DP - -

18

CK DK EK FK* HK

20

CJ DJ EJ FJ* HJ

25

-DHEHFHHH

30

FN* HN

--

-

* Standard part number.
All other types available only on request.

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95076

Revision: 13-Sep-17

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

8

, [e-mail], [e-mail]

Document Number: 94374

www.vishay.com

Pin receptacle
AMP. 60598-1

0.7 (0.03) MIN.

34 (1.34) DIA. MAX.

2 places

53 (2.09) DIA. MAX.

58.5 (2.3) DIA. MAX.

2 holes DIA. 3.5 (0.14) x 2.5 (0.1) deep

4.7 (0.18)

27 (1.06) MAX.

0.7 (0.03) MIN.

6.2 (0.24) MIN.

36.5 (1.44)

Creepage distance: 36.33 (1.430) minimum
Strike distance: 17.43 (0.686) minimum

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

20° ± 5°

C

A

Note:

A = Anode

C = Cathode

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

B-PUK (TO-200AC)

Revision: 12-Jul-17

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1

, [e-mail], [e-mail]

Document Number: 95076

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.

Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 01-Jan-2023

1

Document Number: 91000