Datasheet ST303C10LHK3, ST303C10LHK2, ST303C10LHK1, ST303C10HK3L, ST303C10HK2L Datasheet (International Rectifier)

DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

515A

INVERTER GRADE THYRISTORS Hockey Puk Version

ST303C..L SERIES

Bulletin I25186/A

case style TO-200AC (B-PUK)

Typical Applications

Inverters
Choppers
Induction heating
All types of force-commutated converters

Features

Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capibility
Low thermal impedance
High speed performance

(*) tq = 10 to 20µs for 400 to 800V devices

t

q

= 15 to 30µs for 1000 to 1200V devices

I

T(AV)

515 A

@ T

hs

55 °C

I

T(RMS)

995 A

@ T

hs

25 °C

I

TSM

@ 50Hz 7950 A
@ 60Hz 8320 A

I

2

t @ 50Hz 316 KA2s

@ 60Hz 289 KA

2

s

V

DRM/VRRM

400 to 1200 V

t

q

range (*) 10 to 30 µs

T

J

- 40 to 125 °C

Parameters ST303C..L Units

Major Ratings and Characteristics

ST303C..L Series

Voltage V

DRM/VRRM

, maximum V

RSM

, maximum I

DRM/IRRM

max.

Type number Code repetitive peak voltage non-repetitive peak voltage

@ TJ = TJ max.

V V mA

04 400 500
08 800 900
10 1000 1100
12 1200 1300

Frequency Units

50Hz 1130 950 1800 1540 5660 4990
400Hz 1010 820 1850 1570 2830 2420

1000Hz 680 530 1560 1300 1490 1220
2500Hz 230 140 690 510 540 390
Recovery voltage Vr 50 50 50 50 50 50

Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C

Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF

ELECTRICAL SPECIFICATIONS

Voltage Ratings

I

T(AV)

Max. average on-state current 515 (190) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled

I

T(RMS)

Max. RMS on-state current 995 DC @ 25°C heatsink temperature double side cooled

I

TSM

Max. peak, one half cycle, 7950 t = 10ms No voltage
non-repetitive surge current 8320 A t = 8.3ms reapplied

6690 t = 10ms 100% V

RRM

7000 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 316 t = 10ms No voltage Initial TJ = TJ max

289 t = 8.3ms reapplied
224 t = 10ms 100% V

RRM

204 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 3160 KA2√s t = 0.1 to 10ms, no voltage reapplied

Parameter ST303C..L Units Conditions

On-state Conduction

KA2s

I

TM

180oel

180

o

el

100µs

I

TM

I

TM

Current Carrying Capability

V

A

ST303C..L 50

ST303C..L Series

Fig. 8 - Maximum Non-repetitive Surge CurrentFig. 7 - Maximum Non-repetitive Surge Current

Fig. 6 - On-state Power Loss CharacteristicsFig. 5 - On-state Power Loss Characteristics

Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics

ST303C..L Series

Fig. 9 - On-state Voltage Drop Characteristics

Fig. 10 - Thermal Impedance Z

thJ-hs

Characteristics

Fig. 11 - Reverse Recovered Charge Characteristics

Fig. 12 - Reverse Recovery Current Characteristics

Fig. 13 - Frequency Characteristics

ST303C..L Series

Fig. 14 - Frequency Characteristics

Fig. 15 - Frequency Characteristics

Fig. 16 - Maximum On-state Energy Power Loss Characteristics

ST303C..L Series

Fig. 17 - Gate Characteristics

0.1

1

10

100

0.001 0.01 0.1 1 10 100

V G D

IG D

(b )

(a )

Tj=25 °C

Tj=125 °C

Tj=-40 °C

( 1)

(2)

Insta nta n e o u s G a te C u rre nt (A )

Insta n ta neou s G a te Vo lta g e (V)

Re c ta ng u la r g a te p u lse
a ) Re c o m m e n d e d lo a d lin e fo r

b ) Re c o m m e nd e d lo a d lin e fo r
<=30% ra te d d i/ d t : 10 V , 10o hm s

ra te d d i/ d t : 2 0V , 10o h m s; tr<=1 µ s

tr< =1 µs

( 1) PG M = 10W , tp = 20m s
( 2) PG M = 20W , tp = 10m s
( 3) PG M = 40W , tp = 5m s
( 4) PG M = 60W , tp = 3.3m s

(3 )

De vic e : ST303C ..L Se rie s Fre q u e nc y Lim ite d b y PG (A V)

(4 )

ST303C..L Series

V

TM

Max. peak on-state voltage 2.16 ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse

V

T(TO)1

Low level value of threshold
voltage

V

T(TO)2

High level value of threshold
voltage

r

t

1

Low level value of forward
slope resistance

r

t

2

High level value of forward
slope resistance

I

H

Maximum holding current 600 TJ = 25°C, IT > 30A

I

L

Typical atching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

Parameter ST303C..L Units Conditions

On-state Conduction

1.44 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.48 (I > π x I

T(AV)

), TJ = TJ max.

V

0.57 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

0.56 (I > π x I

T(AV)

), TJ = TJ max.

mΩ

mA

di/dt Max. non-repetitive rate of rise T

J

= TJ max, V

DRM

= rated V

DRM

of turned-on current I

TM

= 2 x di/dt

T

J

= 25°C, V

DM

= rated V

DRM, ITM

= 50A DC, tp= 1µs
Resistive load Gate pulse: 10V, 5Ω source
T

J

= TJ max, I

TM

= 550A, commutating di/dt = 40A/µs

V

R

= 50V, tp = 500µs, dv/dt: see table in device code

Switching

Parameter ST303C..L Units Conditions

1000 A/µs

t

d

Typical delay time 0.83

Min Max

dv/dt Maximum critical rate of rise of T

J

= TJ max. linear to 80% V

DRM

, higher value

off-state voltage available on request

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Parameter ST303C..L Units Conditions

Blocking

500 V/µs

50 mA T

J

= TJ max, rated V

DRM/VRRM

applied

P

GM

Maximum peak gate power 60

P

G(AV)

Maximum average gate power 10

I

GM

Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

I

GT

Max. DC gate current required
to trigger

V

GT

Max. DC gate voltage required
to trigger

I

GD

Max. DC gate current not to trigger 20 mA

V

GD

Max. DC gate voltage not to trigger 0.25 V

Triggering

Parameter ST303C..L Units Conditions

20

5

V TJ = TJ max, tp ≤ 5ms

200 mA

3 V

T

J

= 25°C, VA = 12V, Ra = 6Ω

TJ = TJ max, rated V

DRM

applied

µs

(*) tq = 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices.

10 30

W T

J

= TJ max, f = 50Hz, d% = 50

t

q

Max. turn-off time (*)

ST303C..L Series

Ordering Information Table

5

6

8

9

ST 30 3 C 12 L H K 1

3

4

7

Device Code

1

2

10

1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Rating Table)

6 - L = Puk Case TO-200AC (B-PUK)
7 - Reapplied dv/dt code (for t

q

test condition)

8 - t

q

code

9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)

1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)

3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)

- Critical dv/dt:
None = 500V/µsec (Standard value)

L

= 1000V/µsec (Special selection)

up to 800V

dv/dt - tq combinations available

dv/dt (V/µs) 20 50 100 200 400

t

q

(µs) 10 CN DN EN FN * HN

12 CM DM EM FM HM
15 CL DL EL FL * HL
20 CK DK EK FK * HK

t

q

(µs) 15 CL -- -- -- --

18 CP DP -- -- -­20 CK DK EK FK * HK
25 CJ DJ EJ FJ * HJ
30 -- DH EH FH HH

10

*Standard part number.

All other types available only on request.

only for
1000/1200V

T

J

Max. operating temperature range -40 to 125

T

stg

Max. storage temperature range -40 to 150

R

thJ-hs

Max. thermal resistance, 0.11 DC operation single side cooled
junction to heatsink 0.05 DC operation double side cooled

R

thC-hs

Max. thermal resistance, 0.011 DC operation single side cooled
case to heatsink 0.005 DC operation double side cooled

F Mounting force, ± 10% 9800 N

(1000) (Kg)

wt Approximate weight 250 g

Parameter ST303C..L Units Conditions

K/W

Thermal and Mechanical Specification

°C

K/W

Case style TO - 200AC (B-PUK) See Outline Table

Single Side Double Side Single Side Double Side

180° 0.012 0.010 0.008 0.008 T

J

= TJ max.

120° 0.014 0.015 0.014 0.014

90° 0.018 0.018 0.019 0.019 K/W
60° 0.026 0.027 0.027 0.028

30° 0.045 0.046 0.046 0.046

Sinusoidal conduction Rectangular conduction

Conduction angle Units Conditions

∆R

thJ-hs

Conduction

(The following table shows the increment of thermal resistence R

thJ-hs

when devices operate at different conduction angles than DC)

ST303C..L Series

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Outline Table

TWO PLACES

PIN RECEPTACLE

AMP. 60598-1

0.7 (0.03) MIN.

34 (1.34) DIA. MAX.

53 (2.09) DIA. MAX.

58.5 (2.3 ) DIA. M AX .

2 HOLES DIA. 3.5 (0.14) x

2.5 (0.1) DEEP

4.7 (0.18)

27 (1.06) M AX.

0.7 (0.03) MIN.

6.2 (0.24) MIN.

20°± 5°

36.5 (1.44)

CREPAGE DISTANCE 36.33 (1.430) MIN.

STRIKE DISTANCE 17.43 (0.686) MIN.

Case Style TO-200AC (B-PUK)

All dimensions in millimeters (inches)