Datasheet ST303C12CHK0, ST303C10CHK3, ST303C10CHK2L, ST303C12CHK3L, ST303C12CHK3 Datasheet (International Rectifier)

DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

620A

INVERTER GRADE THYRISTORS Puk Version

ST303C..C SERIES

Bulletin I25172/A

case style TO-200AB (E-PUK)

Features

Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance

Typical Applications

Inverters
Choppers
Induction heating
All types of force-commutated converters

Major Ratings and Characteristics

(*) tq = 10 to 20µs for 400 to 800V devices

t

q

= 15 to 30µs for 1000 to 1200V devices

I

T(AV)

620 A

@ T

hs

55 °C

I

T(RMS)

1180 A

@ T

hs

25 °C

I

TSM

@ 50Hz 7950 A
@ 60Hz 8320 A

I

2

t @ 50Hz 316 KA2s

@ 60Hz 289 KA

2

s

V

DRM/VRRM

400 to 1200 V

t

q

range (*) 10 to 30 µs

T

J

- 40 to 125 °C

Parameters ST303C..C Units

ST303C..C Series

Voltage V

DRM/VRRM

, maximum V

RSM

, maximum I

DRM/IRRM

max.

Type number Code repetitive peak voltage non-repetitive peak voltage

@ TJ = TJ max.

V V mA

04 400 500
08 800 900
10 1000 1100
12 1200 1300

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Frequency Units

50Hz 1314 1130 2070 1940 6930 6270
400Hz 1260 1040 2190 1880 3440 2960

1000Hz 900 700 1900 1590 1850 1540 A
2500Hz 340 230 910 710 740 560
Recovery voltage Vr 50 50 50 50 50 50

Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C

Equivalent values for RC circuit 10Ω / 0.47µF 10Ω / 0.47µF 10Ω / 0.47µF

I

TM

180oel

180

o

el

100µs

I

TM

I

TM

Current Carrying Capability

V

ST303C..C 50

I

T(AV)

Max. average on-state current 620 (230) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled

I

T(RMS)

Max. RMS on-state current 1180 DC @ 25°C heatsink temperature double side cooled

I

TSM

Max. peak, one half cycle, 7950 t = 10ms No voltage
non-repetitive surge current 8320 A t = 8.3ms reapplied

6690 t = 10ms 100% V

RRM

7000 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 316 t = 10ms No voltage Initial TJ = TJ max

289 t = 8.3ms reapplied
224 t = 10ms 100% V

RRM

204 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 3160 KA2√s t = 0.1 to 10ms, no voltage reapplied

Parameter ST303C..C Units Conditions

On-state Conduction

KA2s

ST303C..C Series

Fig. 3 - Current Ratings Characteristics

Fig. 4 - Current Ratings Characteristics

Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics

Fig. 8 - Maximum Non-repetitive Surge Current

Fig. 7 - Maximum Non-repetitive Surge Current

ST303C..C Series

Fig. 9 - On-state Voltage Drop Characteristics

Fig. 10 - Thermal Impedance Z

thJ-hs

Characteristics

Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics

Fig. 13 - Frequency Characteristics

ST303C..C Series

Fig. 14 - Frequency Characteristics

Fig. 15 - Frequency Characteristics

Fig. 16 - Maximum On-state Energy Power Loss Characteristics

ST303C..C Series

Fig. 17 - Gate Characteristics

0.1

1

10

100

0.001 0.01 0.1 1 10 100

V G D

IG D

(b )

(a )

Tj=25 °C

Tj=125 °C

Tj=-40 °C

(1)

( 2)

Insta n ta n e o us G a te C u rre nt (A )

Insta nta ne o u s G a te Vo ltag e (V)

Re c ta ng ula r g a te p u lse
a ) Re c o m m e n d e d lo a d lin e fo r

b ) Re c o m m e n d e d lo a d lin e fo r
<= 30 % ra te d d i/ d t : 10 V , 10o hm s

ra t e d d i/ d t : 20 V , 10o h m s; tr< =1 µs

tr< =1 µs

( 1) PG M = 10W , tp = 2 0m s
( 2) PG M = 20W , tp = 1 0m s
( 3) PG M = 40W , tp = 5m s
( 4) PG M = 60W , tp = 3.3m s

( 3 )

De v ic e : ST30 3C ..C Se rie s Fre q u e n c y Lim ite d b y PG ( A V )

( 4 )

ST303C..C Series

V

TM

Max. peak on-state voltage 2.16 ITM= 1255A, TJ = TJ max, tp = 10ms sine wave pulse

V

T(TO)1

Low level value of threshold
voltage

V

T(TO)2

High level value of threshold
voltage

r

t

1

Low level value of forward
slope resistance

r

t

2

High level value of forward
slope resistance

I

H

Maximum holding current 600 TJ = 25°C, IT > 30A

I

L

Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

Parameter ST303C..C Units Conditions

On-state Conduction

1.44 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

V

0.56 (I > π x I

T(AV)

), TJ = TJ max.

mΩ

mA

di/dt Max. non-repetitive rate of rise T

J

= TJ max, V

DRM

= rated V

DRM

of turned-on current I

TM

= 2 x di/dt

T

J

= 25°C, V

DM

= rated V

DRM, ITM

= 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T

J

= TJ max, I

TM

= 550A, commutating di/dt = 40A/µs

V

R

= 50V, tp = 500µs, dv/dt: see table in device code

Switching

Parameter ST303C..C Units Conditions

1000 A/µs

t

d

Typical delay time 0.83

Min Max

dv/dt Maximum critical rate of rise of T

J

= TJ max. linear to 80% V

DRM

, higher value

off-state voltage available on request

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Parameter ST303C..C Units Conditions

Blocking

500 V/µs

50 mA T

J

= TJ max, rated V

DRM/VRRM

applied

P

GM

Maximum peak gate power 60

P

G(AV)

Maximum average gate power 10

I

GM

Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

I

GT

Max. DC gate current required
to trigger

V

GT

Max. DC gate voltage required
to trigger

I

GD

Max. DC gate current not to trigger 20 mA

V

GD

Max. DC gate voltage not to trigger 0.25 V

Triggering

Parameter ST303C..C Units Conditions

20

5

V TJ = TJ max, tp ≤ 5ms

200 mA

3 V

µs

t

q

Max. turn-off time (*) 10 30

W T

J

= TJ max, f = 50Hz, d% = 50

(*) t

q

= 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices.

1.48 (I > π x I

T(AV)

), TJ = TJ max.

0.57 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

T

J

= TJ max, rated V

DRM

applied

T

J

= 25°C, VA = 12V, Ra = 6Ω

ST303C..C Series

Ordering Information Table

5

6

8

9

ST 30 3 C 12 C H K 1

3

4

7

Device Code

1

2

10

1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Rating Table)

6 - C = Puk Case TO-200AB (E-PUK)
7 - Reapplied dv/dt code (for t

q

test condition)

8 - t

q

code

9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)

1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)

3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)

- Critical dv/dt:
None = 500V/µsec (Standard value)

L

= 1000V/µsec (Special selection)

only for
1000/1200V

up to 800V

dv/dt - tq combinations available

dv/dt (V/µs) 20 50 100 200 400

t

q

(µs) 10 CN DN EN FN * HN

12 CM DM EM FM HM
15 CL DL EL FL * HL
20 CK DK EK FK * HK

t

q

(µs) 15 CL -- -- -- --

18 CP DP -- -- -­20 CK DK EK FK * HK
25 CJ DJ EJ FJ * HJ
30 -- DH EH FH HH

10

*Standard part number.

All other types available only on request.

T

J

Max. operating temperature range -40 to 125

T

stg

Max. storage temperature range -40 to 150

R

thJ-hs

Max. thermal resistance, 0.09 DC operation single side cooled
junction to heatsink 0.04 DC operation double side cooled

R

thC-hs

Max. thermal resistance, 0.020 DC operation single side cooled
case to heatsink 0.010 DC operation double side cooled

F Mounting force, ± 10% 9800 N

(1000) (Kg)

wt Approximate weight 83 g

Parameter ST303C..C Units Conditions

K/W

Thermal and Mechanical Specification

°C

K/W

Case style TO - 200AB (E-PUK) See Outline Table

Single Side Double Side Single Side Double Side
180° 0.010 0.010 0.007 0.007
120° 0.012 0.012 0.012 0.013

90° 0.015 0.015 0.016 0.017 K/W T

J

= TJ max.

60° 0.022 0.022 0.023 0.023
30° 0.036 0.036 0.036 0.037

Sinusoidal conduction Rectangular conduction

Conduction angle Units Conditions

∆R

thJ-hs

Conduction

(The following table shows the increment of thermal resistence R

thJ-hs

when devices operate at different conduction angles than DC)

ST303C..C Series

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Outline Table

Case Style TO-200AB (E-PUK)

All dimensions in millimeters (inches)

DIA. MAX.

4.75 (0.19)

28 (1.10)

6.5 (0.26)

0.3 (0.01) MIN.

0.3 (0.01) MIN.

ANODE TO GATE
CREEPAGE DISTANCE: 11.18 (0.44) MIN.
STRIKE DISTANCE: 7.62 (0.30) MIN.

25.3 (0.99)

14.1 / 15.1

(0.56 / 0.59)

25°± 5°

GATE TERM. FOR

1.47 (0.06) DIA.
PIN RECEPTACLE

25.3 (0.99)

40.5 (1.59) DIA. MAX.

DIA. MAX.

2 HOLES 3.56 (0.14) x

1.83 (0.07) MIN. DEEP

42 (1.65) MAX.