Datasheet ST300SPbF Series DataSheet (Vishay)

TO-209AE (TO-118)

PRODUCT SUMMARY

I

T(AV)

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 300 A

FEATURES

• Center amplifying gate

• International standard case TO-209AE (TO-118)

• Hermetic metal case with ceramic insulator

• Threaded studs UNF 3/4"-16UNF-2A or ISO M24 x 1.5

• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

300 A

• Controlled DC power supplies

• AC controllers

ST300SPbF Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 8000

60 Hz 8380

50 Hz 320

60 Hz 292

Typical 100 µs

300 A

75 °C

470

400 to 2000 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

ST300S

V

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

18 1800 1900

20 2000 2100

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

A

kA2s

MAXIMUM

= TJ MAXIMUM

J

mA

50

Document Number: 94406 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

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ST300SPbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 300 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3200 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

180° conduction, half sine wave 300 A

75 °C

DC at 64 °C case temperature 470

t = 10 ms

t = 8.3 ms 8380

t = 10 ms

t = 8.3 ms 7040

t = 10 ms

t = 8.3 ms 292

t = 10 ms

t = 8.3 ms 207

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.98

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.73

T(AV)

), TJ = TJ maximum 0.97

T(AV)

), TJ = TJ maximum 0.74

T(AV)

8000

6730

320

226

Ipk = 940 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.66 V

TJ = 25 °C, anode supply 12 V resistive load

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dIdt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 30 mA

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Document Number: 94406

2 Revision: 11-Aug-08

ST300SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 300 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

GM

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C 2.5 -

= 25 °C 1.8 3

T

J

= 125 °C 1.1 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thCS

DC operation 0.10

Mounting surface, smooth, flat and greased 0.03

Mounting torque, ± 10 % Non-lubricated threads

Approximate weight 535 g

Case style See dimensions - link at the end of datasheet TO-209AE (TO-118)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.011 0.008

120° 0.013 0.014

T

90° 0.017 0.018

= TJ maximum K/W

J

60° 0.025 0.026

30° 0.041 0.042

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

- 40 to 125

- 40 to 150

48.5

(425)

(lbf · in)

°C

K/W

N · m

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Revision: 11-Aug-08 3

ST300SPbF Series

Vishay High Power Products

130

120

110

100

90

80

70

Maximum Allowable Case Temperature (°C)

0 50 100 150 200 250 300 350

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

ST3 00 S Se r ie s
R (DC) = 0.10 K/ W

thJC

Cond uction Ang le

30°

60°

90°

120°

180°

Average On-state Current (A)

480

440

400

360

320

280

180°
120°

90°
60°
30°

RM S Li m i t

240

200

160

120

80

40

0

Maximum Average On-state Power Loss (W)

0 40 80 120 160 200 240 280 320

Avera ge On-state Current (A)

Phase Control Thyristors

(Stud Version), 300 A

130

120

110

100

90

80

70

60

Maximum Allowable Case Temp erature (°C)

0100200300400500

R

0

.

0

t

8

h

S

K

A

/

W

0

.

1

2

K

/

W

0

.

2

K

/

W

0

.

3

K

/

W

0

.

4

K

/

Conduction Angle

ST300S Se rie s
T = 125°C

J

W

0

.

6

K

/

W

1

.

2

K

/

W

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - On-State Power Loss Characteristics

=

0

.

0

3

K

/

W

­D

e

l

t

a

ST3 00 S Se r ie s
R (DC) = 0.10 K/W

thJC

Conduc tion Period

30°

60°

90°

120°

Averag e On-sta te Current (A)

R

180°

DC

650

600

550

500

450

400

350

300

250

200

150

100

50

Maximum Averag e On-state Power Loss (W)

DC
180°
120°

90°

60°

30°

RM S Li m it

0

0

100 200 300 400 500

Average On-state Current (A)

Conduction Period

ST300S Se rie s
T = 125°C

J

R = 0. 03 K/

th

S

A

0

.

0

8

K

0

.

1

2

K

0

.

2

K

0

.

3

K

0

.

6

K

1

.

2

K

W

/

W

­De

l

t

/

W

/

W

/

W

/

W

/

W

a

R

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

Fig. 4 - On-State Power Loss Characteristics

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Document Number: 94406

4 Revision: 11-Aug-08

ST300SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 300 A

7500

At Any Ra te d Loa d Cond ition And With

Rat ed V App lied Following Surg e.

7000

6500

6000

5500

5000

4500

4000

3500

Pe a k Ha lf Sine Wave On-sta te Current (A)

3000

110100

Number Of Equal Amp litud e Half Cycle C urrent Pulses (N)

RRM

ST3 00 S Se r ie s

Ini t ial T = 12 5°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

10000

T = 2 5° C

J

T = 12 5° C

J

8500

Maximum Non Repetitive Surge Current

Peak Half Sine Wa ve On-stat e Current (A)

8000

7500

7000

6500

6000

5500

5000

4500

4000

3500

3000

Versus Pulse Train Dura tion. Control

Of Cond uc tion May Not Be Maintained .

ST300S Series

0.01 0.1 1

Pulse Tra in Du ra t io n ( s)

Initia l T = 125°C

No Voltage Reapplied
Rated V Reap plied

RRM

J

1000

ST3 00 S Se r i e s

Instantaneous On-state Current (A)

100

0123456789

Instantaneous On-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

1

Stead y Stat e Value

R = 0. 10 K/ W

thJC

(DC Operation)

thJC

0.1

0.01

ST3 0 0 S Se r i e s

0.001

Tran sient Therma l Imp ed anc e Z (K/ W)

0.001 0.01 0. 1 1 10

Sq u a r e W a v e P u l se D u r a t i o n ( s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

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Revision: 11-Aug-08 5

ST300SPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs

b) Recommended load line for

<=30% rated di/ dt : 10V, 10ohms

10

tr<=1 µs

1

Instantaneous Gate Voltag e (V)

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

Device code

ST 30 0 S 20 P 0 - PbF

VGD

Phase Control Thyristors

(Stud Version), 300 A

(a)

(b)

Tj = - 4 0 °C

Tj = 25 ° C

Tj = 12 5 ° C

IG D

Device : ST300S Series

Fig. 9 - Gate Characteristics

Instantaneous Gate Current (A)

Fre q u e n c y Lim i t ed b y PG ( A V)

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms

(2)

(1)

(3)

(4)

324

51

6789

1 - Thyristor

2 - Essential part number

3 - 0 = Converter grade

4

- S = Compression bonding stud

5

- Voltage code x 100 = V

6

- P = Stud base 3/4" 16UNF-2A threads

(see Voltage Ratings table)

RRM

M = Stud base metric threads (M24 x 1.5)

7

- 0 = Eyelet terminals (gate and auxiliary cathode leads)

1 = Fast-on terminals (gate and auxiliary cathode leads)

3 = Threaded top terminal 3/8" 24UNF-2A

8 - Critical dV/dt:

None = 500 V/µs (standard value)

L = 1000 V/µs (special selection)

9 - Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95084

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6 Revision: 11-Aug-08

Document Number: 94406

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

DIMENSIONS in millimeters (inches)

Ceramic housing

22 (0.87) MAX.

TO-209AE (TO-118)

Case Style TO-209AE (TO-118)

4.3 (0.17) DIA.

Outline Dimensions

Vishay High Power Products

4.5 (0.18) MAX.

Red silicon rubber

38 (1.50)

MAX. DIA.

245 (9.65)

255 (10.04)

Red shrink

MAX.

27.5 (1.08)

Ceramic housing

10.5 (0.41)
NOM.

3/4"16 UNF-2A

49 (1.92) MAX.

Case Style TO-209AE (TO-118)

17 (0.67) DIA.

3/8"-24UNF-2A

White gate

Red cathode

White shrink

245 (9.65) ± 10 (0.39)

MAX.

47 (1.85)

SW 45

21 (0.82) MAX.

(1)

with top thread terminal 3/8"

Flexible leads

C.S. 50 mm

(0.078 s.i.)

2

Fast-on terminals

AMP. 280000-1

REF-250

9.5 (0.37) MIN.

22 (0.86) MIN.

25 (0.98)

38 (1.5) DIA. MAX.

77.5 (3.05)

80.5 (3.17)

MAX.

27.5 (1.08)

3/4"-16UNF-2A

SW 45

(1)

MAX.

47 (1.85)

21 (0.83) MAX.

Note

(1)

For metric device: M24 x 1.5 - length screw 21 (0.83) maximum

Document Number: 95084 For technical questions concerning discrete products, contact: [e-mail]
Revision: 02-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1