Datasheet ST230S12P1VPBF Specification

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TO-93 (TO-209AB)

VS-ST230S...VPbF Series

Vishay Semiconductors

Phase Control Thyristors

(Stud Version), 230 A

FEATURES

• Center amplifying gate

• International standard case TO-93 (TO-209AB)

• Glass-metal seal up to 1200 V

• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling

• Designed and qualified for industrial level

• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

I

T(AV)

V

DRM/VRRM

V

TM

I

GT

T

J

Package TO-93 (TO-209AB)

Circuit configuration Single SCR

400 V, 800 V, 1200 V

-40 °C to +125 °C

230 A

1.55 V

150 mA

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 5700

60 Hz 5970

50 Hz 163

60 Hz 149

Typical 100 μs

230 A

85 °C

360 A

A

kA2s

400 to 1200 V

-40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

VS-ST230S

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VOLTAGE

CODE

04 400 500

12 1200 1300

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DRM/VRRM

PEAK AND OFF-STATE VOLTAGE

, MAXIMUM REPETITIVE

NON-REPETITIVE PEAK VOLTAGE

V

1

V

, MAXIMUM

RSM

V

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I

DRM/IRRM

T

= TJ MAXIMUM

J

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MAXIMUM AT

mA

3008 800 900

VS-ST230S...VPbF Series

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ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one-cycle
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1630 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Maximum (typical) latching current I

I

T(AV)

T(RMS)

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

180° conduction, half sine wave

DC at 78 °C case temperature 360

t = 10 ms

t = 8.3 ms 5970

t = 10 ms

t = 8.3 ms 5000

t = 10 ms

t = 8.3 ms 148

t = 10 ms

t = 8.3 ms 105

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

No voltage
reapplied

100 % V

RRM

reapplied

No voltage
reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.98

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.81

T(AV)

Ipk = 720 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.55 V

TJ = 25 °C, anode supply 12 V resistive load

Vishay Semiconductors

Sinusoidal half wave,
initial T

= TJ maximum

J

), TJ = TJ maximum 0.92

T(AV)

), TJ = TJ maximum 0.88

T(AV)

1000 (300)

230 A

85 °C

5700

4800

163

115

600

kA

mΩ

mA

A

2

V

s

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t

= TJ maximum, anode voltage ≤ 80 % V

T

J

Gate current 1 A, dIg/dt = 1 A/μs
V

= 0.67 % V

d

DRM

ITM = 300 A, TJ = TJ maximum, dIF/dt = 20 A/μs,
V

= 50 V, dV/dt = 20 V/μs, gate 0 V 100 Ω, tp = 500 μs

R

≤ 1 μs

r

, TJ = 25 °C

DRM

1000 A/μs

1.0

μs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise
of off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

I

,

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/μs

applied 30 mA

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TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage +V

Maximum peak negative gate voltage -V

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

T

= 25 °C 90 150 mA

J

T

= 125 °C 40 -

J

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

J

= 125 °C 1.2 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units 12
V anode to cathode applied

Maximum gate current/voltage not
to trigger is the maximum value

TJ = TJ maximum

which will not trigger any unit with
rated V

DRM

applied

Vishay Semiconductors

VALUES

TYP. MAX.

20

5.0

180 -

10 mA

anode to cathode

0.25 V

UNITS

W

V

VT

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T
Maximum thermal resistance,

junction to case
Maximum thermal resistance,

case to heatsink

R

R

T

J

Stg

thJC

thC-hs

DC operation 0.10

Mounting surface, smooth, flat and greased 0.04

Non-lubricated threads

Mounting torque, ± 10 %

Lubricated threads

Approximate weight 280 g

Case style See dimensions - link at the end of datasheet TO-93 (TO-209AB)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.016 0.012

120° 0.019 0.020

T

90° 0.025 0.027

= TJ maximum K/W

J

60° 0.036 0.037

30° 0.060 0.060

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

-40 to 125

-40 to 150

31

(275)

24.5

(210)

(lbf ⋅ in)

°C

K/W

N · m

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80

90

100

110

120

130

Maximum Allowable Case Temperature (°C)

30°

60°

90°

120°

180°

Average On-State Current (A)

Conduction angle

R

thJC

(DC) = 0.1 K/W

Ø

0 50 100 150 200 250

70

80

90

100

110

120

130

0 100 200 300 400

DC

30°

60°

90°

120°

180°

Average On-State Current (A)

Maximum Allowable Case Temperature (°C)

Conduction period

R

thJC

(DC) = 0.1 K/W

Ø

50 75 100 125

Maximum Allowable Ambient Temperature (°C)

R

=

0

.

08 K/W - Delta R

thSA

0

.

1

K

/

W

0

.

1

6

K

/

W

0

.

2

K

/

W

0

.

3

K

/

W

0

.

4

K

/

W

0

.

5

K

/

W

0

.

8

K

/

W

1

.

2

K

/W

0

50

100

150

200

250

300

350

400

450

0 50 100 150 200 250 300 350 400

DC
180°
120°

90°

60°

30°

RMS Limit

Conduction period

Maximum Average On-State Power Loss (W)

Average On-State Current (A)

T = 125 °C

J

Ø

VS-ST230S...VPbF Series

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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Vishay Semiconductors

350

300

250

200

150

100

50

0

0 50 100 150 200 250

Maximum Average On-State Power Loss (W)

180°
120°

RMS Limit

Average On-State Current (A)

90°
60°
30°

R

thSA

0

0

.

1

Ø

Conduction angle

TJ = 125 °C

.

1

6

K

/

W

0

.

2

K

/

W

0

.

3

K

/

W

0

.

4

K

/

W

0

.

5

K

/

W

0

.

8

K

/

W

1.2 K/W

50 75 100 125

K

/

W

=

0.8 K/W - Delta R

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - On-State Power Loss Characteristics

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Fig. 4 - On-State Power Loss Characteristics

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0.001

0.01

0.1

1

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Transient Thermal Impedance Z

thJC

(K/W)

Steady state value
R

thJC

= 0.1 K/W

(DC operation)

VS-ST230S...VPbF Series

Vishay Semiconductors

5500

5000

4500

4000

3500

3000

2500

2000

Peak Half Sine Wave On-State Current (A)

1 10 100

At any rated load condition and with

rated V

applied following surge.

RRM

Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Number Of Equal Amplitude

Half Cycle Current Pulses (N)

6000

5500

5000

4500

4000

3500

3000

2500

2000

Peak Half Sine Wave On-State Current (A)

Maximum non repetitive surge current vs.
pulse drain duration.
Control of conduction may not be maintained.

Initial TJ = 125 °C
No voltage reapplied
Rated V

0.01 0.1 1

Pulse Train Duration (s)

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

10 000

1000

RRM

reapplied

100

Instantaneous On-State Current (A)

10

0.5 1.5 2.5 3.5 4.5

TJ = 25 °C

TJ = 125 °C

Instantaneous On-State Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

Fig. 8 - Thermal Impedance Z

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Characteristics

thJC

5

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VS-ST230S...VPbF Series

Vishay Semiconductors

100

Rectangular gate pulse
a) Recommended load line for
rated dIF/dt : 20 V, 10 Ω; tr <=1 μs
b) Recommended load line for

< = 30 % rated dIF/dt : 10 V, 10 Ω

10

tr < = 1 μs

1

VGD

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

Device code

STVS- 23 0 S 12 P 0 V PbF

(b)

T

J

=-40 °C

T

J

=25 °C

T

J

=125 °C

IGD

Instantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

(1) PGM = 10 W, tp = 4 ms
(2) PGM = 20 W, t
(3) PGM = 40 W, t
(4) PGM = 60 W, t

(a)

Frequency Limited by PG (AV)

(1) (2)

= 2 ms

p

= 1 ms

p

= 0.66 ms

p

51 32 4 6 7 8 109

(3)

(4)

1 - Vishay Semiconductors product

- Thyristor

2

- Essential part number

3

- 0 = converter grade

4

- S = compression bonding stud

5

- Voltage code x 100 = V

6

- P = stud base 3/4"-16UNF2A threads

7

- 0 = eyelet terminals (gate and auxiliary cathode leads)

8

(see Voltage Ratings table)

RRM

1 = fast-on terminals (gate and auxiliary cathode leads)

9 - V = glass-metal seal (only up to 1200 V)

10 - None = standard production

- PbF = lead (Pb)-free

Note: For metric device M16 x 1.5 contact factory

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95082

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DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay Semiconductors

TO-209AB (TO-93)

Glass metal seal

8.5 (0.33) DIA.

Red silicon rubber

210 (8.26) ± 10 (0.39)

90 (3.54) MIN.

MAX.

38.5 (1.52)

27.5 (1.08) MAX.

Ceramic housing

8.5 (0.33) DIA.

Red cathode

Red shrink

16 (0.63) MAX.

19 (0.75) MAX.

3/4"-16UNF-2A

35 (1.38) MAX.

19 (0.75) MAX.

4.3 (0.17) DIA.

C.S. 0.4 mm

(0.0006 s.i.)

White gate

White shrink

28.5 (1.12) MAX. DIA.

SW 32

(1)

4.3 (0.17) DIA.

2

220 (8.66) ± 10 (0.39)

Flexible leads

C.S. 25 mm

(0.039 s.i.)

4 (0.16) MAX.

2

Fast-on terminals

AMP. 280000-1

REF-250

4 (0.16) MAX.

9.5 (0.37) MIN.

22 (0.86) MIN.

9.5 (0.37) MIN.

Red silicon rubber

Red cathode

210 (8.26) ± 10 (0.39)

Red shrink

90 (3.54) MIN.

MAX.

38.5 (1.52)

27.5 (1.08) MAX.

16 (0.63) MAX.

3/4"-16UNF-2A

35 (1.38) MAX.

C.S. 0.4 mm

(0.006 s.i.)

White gate

White shrink

27.5 (1.08) MAX. DIA.

SW 32

(1)

Flexible leads

C.S. 25 mm

(0.039 s.i.)

2

220 (8.66) ± 10 (0.39)

2

22 (0.86) MIN.

Note

(1)

For metric device: M16 x 1.5 - length 21 (0.83) maximum

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