Datasheet ST230CPbF Series DataSheet (Vishay)

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TO-200AB (A-PUK)

PRODUCT SUMMARY

T(AV)

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 410 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AB (A-PUK)

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

410 A

• Controlled DC power supplies

• AC controllers

ST230CPbF Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

T(AV)

T(RMS)

TSM

DRM/VRRM

50 Hz 5700

60 Hz 5970

50 Hz 163

60 Hz 149

Typical 100 µs

410 A

55 °C

780 A

25 °C

400 to 2000 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

ST230C..C

DRM/VRRM

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

14 1400 1500

16 1600 1700

18 1800 1900

20 2000 2100

REPETITIVE PEAK AND

OFF-STATE VOLTAGE

, MAXIMUM

RSM

NON-REPETITIVE

PEAK VOLTAGE

DRM/IRRM

AT T

= TJ MAXIMUM

kA2s

MAXIMUM

Document Number: 94398 For technical questions, contact: ind-modules@vishay.com Revision: 11-Aug-08 1

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ST230CPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 410 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current at heatsink temperature

Maximum RMS on-state current I

T(RMS)

Maximum peak, one-cycle non-repetitive surge current

Maximum I

t for fusing I2t

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1630 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Maximum (typical) latching current I

T(AV)

180° conduction, half sine wave double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 780

TSM

T(TO)1

T(TO)2

t = 10 ms

t = 8.3 ms 5970

t = 10 ms

t = 8.3 ms 5000

t = 10 ms

t = 8.3 ms 148

t = 10 ms

t = 8.3 ms 105

(16.7 % x π x I (I > π x I (16.7 % x π x I (I > π x I

Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.69 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage reapplied

100 % V reapplied

No voltage

RRM

Sinusoidal half wave, initial T

= TJ maximum

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.98

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.81

T(AV)

), TJ = TJ maximum 0.92

T(AV)

), TJ = TJ maximum 0.88

T(AV)

410 (165) A

55 (85) °C

5700

4800

163

115

600

1000 (300)

kA2s

mΩ

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

Gate drive 20 V, 20 Ω, t T

= TJ maximum, anode voltage ≤ 80 % V

≤ 1 µs

DRM

Gate current 1 A, dIg/dt = 1 A/µs V

= 0.67 % V

, TJ = 25 °C

DRM

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs, V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

1000 A/µs

1.0 µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of off-state voltage

Maximum peak reverse and off-state leakage current

dV/dt T

RRM

DRM

= TJ maximum linear to 80 % rated V

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 30 mA

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Document Number: 94398

2 Revision: 11-Aug-08

Page 3

ST230CPbF Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 410 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

G(AV)

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

= 25 °C 90 150 mA

= 125 °C 40 -

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

= 125 °C 1.2 -

Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied

Maximum gate current/voltage not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

5.0

180 -

10 mA

0.25 V

UNITS

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink

Maximum thermal resistance, case to heatsink

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.17

DC operation double side cooled 0.08

DC operation single side cooled 0.033

DC operation double side cooled 0.017

Mounting force, ± 10 %

Approximate weight 50 g

Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.015 0.017 0.011 0.011

120° 0.018 0.019 0.019 0.019

90° 0.024 0.024 0.026 0.026

60° 0.035 0.035 0.036 0.036

30° 0.060 0.060 0.060 0.061

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

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- 40 to 125

- 40 to 150

°C

K/W

4900 (500)

(kg)

TEST CONDITIONS UNITS

= TJ maximum K/W

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ST230CPbF Series

Vishay High Power Products

130

120

110

100

0 40 80 120 160 200 240 280 320

Maximum Allowable Heatsink Temperature (°C)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

0 100 200 300 400 500

Maximum Allowable Heatsink Temperature (°C)

Fig. 2 - Current Ratings Characteristics

ST230C..C Series (Single Side Cooled) R (DC) = 0.17 K/W

thJ-hs

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

ST230C..C Series (Single Side Cooled) R (DC) = 0.17 K/W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

Average On-state Current (A)

Phase Control Thyristors

(Hockey PUK Version), 410 A

130

120

110

100

180°

0 100 200 300 400 500 600 700 800

Maximum Allowable Heatsink Temperature (°C)

1100

1000

900

800

700

600

500

400

300

200

100

0 100 200 300 400 500 600

Maximum Allowable Heatsink Temperature (°C)

Fig. 5 - On-State Power Loss Characteristics

ST230C..C Series (Double Side Cooled) R (DC) = 0.08 K/W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

Average On-state Current (A)

Fig. 4 - Current Ratings Characteristics

180° 120°

90° 60° 30°

ST230C..C Series T = 125°C

Average On-state Current (A)

RMS Limit

Conduction Angle

130

120

110

ST230C..C Series (Double Side Cooled) R (DC) = 0.08 K/W

thJ-hs

100

30°

60°

Conduction Angle

90°

120°

180°

0 100 200 300 400 500 600

Maximum Allowable Heatsink Temperature (°C)

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Average On-state Current (A)

Fig. 3 - Current Ratings Characteristics

1400

1200

1000

800

DC 180° 120°

90°

60°

30°

RMS Limit

600

Conduction Period

400

200

ST230C..C Series T = 125°C

0 200 400 600 800 1000

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

Fig. 6 - On-State Power Loss Characteristics

Document Number: 94398

Page 5

ST230CPbF Series

Phase Control Thyristors

(Hockey PUK Version), 410 A

5500

At Any Rated Load Condition And With

5000

Rated Vrrm Applied Following Surge.

4500

4000

3500

3000

ST230C..C Series

2500

2000

Peak Half Sine Wave On-state Current (A)

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Initial Tj = 125°C

@ 60 Hz 0.0083 s @ 50 Hz 0.0100 s

10000

Tj = 25°C

Vishay High Power Products

6500

Maximum Non Repetitive Surge Current

6000

5500

5000

4500

4000

3500

3000

2500

2000

Peak Half Sine Wave On-state Current (A)

Fig. 8 - Maximum Non-Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

ST230C..C Series

Initial Tj = 125°C

No Voltage Reapplied

Rated Vrrm Reapplied

0.01 0.1 1

Pulse Train Duration (s)

Single and Double Side Cooled

Tj = 125°C

1000

ST230C..C Series

Instantaneous On-state Current (A)

100

0.5 1 1.5 2 2.5 3 3.5 4 4.5

Instantaneous On-state Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

Steady State Value

R = 0.17 K/W

thJ-hs

(Single Side Cooled)

R = 0.08 K/W

0.1

thJ-hs

(Double Side Cooled)

(DC Operation)

0.01

ST230C..C Series

0.001

0.001 0.01 0.1 1 10

Transient Thermal Impedance Z (K/W)

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

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ST230CPbF Series

Vishay High Power Products

100

Rectangular gate pulse a) Recommended load line for

rated di/dt : 20V, 10ohms; tr<=1 µs

b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

Device code

ST 23 0 C 20 C 1 PbF

VGD

Phase Control Thyristors

(Hockey PUK Version), 410 A

(1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms

(a)

(b)

Tj=-40

Tj=25

Tj=125

° C

IGD

Device: ST230C..C Series

Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

° C

°C

Frequency Limited by PG(AV)

(2)

(3)(1)

(4)

324

- Thyristor

- Essential part number

- 0 = Converter grade

- C = Ceramic PUK

- Voltage code x 100 = V

- C = PUK case TO-200AB (A-PUK)

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

6789

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

- Critical dV/dt:

None = 500 V/µs (Standard selection)

L = 1000 V/µs (Special selection)

- Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95074

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Document Number: 94398

Page 7

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

Document Number: 99901 www.vishay.com Revision: 12-Mar-07 1

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DIMENSIONS in millimeters (inches)

TO-200AB (A-PUK)

Case Style TO-200AB (A-PUK)

Anode to gate Creepage distance: 7.62 (0.30) minimum Strike distance: 7.12 (0.28) minimum

19 (0.75)

DIA. MAX.

Outline Dimensions

Vishay High Power Products

0.3 (0.01) MIN.

13.7/14.4

(0.54/0.57)

19 (0.75)

DIA. MAX.

38 (1.50) DIA MAX.

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

42 (1.65) MAX.

0.3 (0.01) MIN.

Gate terminal for

1.47 (0.06) DIA. pin receptacle

6.5 (0.26)

4.75 (0.19)

25° ± 5°

28 (1.10)

Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification)

Document Number: 95074 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 01-Aug-07 For technical questions concerning module products, contact: ind-modules@vishay.com

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