Datasheet ST230C16C3L, ST230C16C3, ST230C16C2L, ST230C16C2, ST230C16C1L Datasheet (International Rectifier)

Bulletin I25162/B

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ST230C..C SERIES

PHASE CONTROL THYRISTORS Hockey Puk V ersion

410A

Features

Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)

Typical Applications

DC motor controls
Controlled DC power supplies
AC controllers

Major Ratings and Characteristics

Parameters ST230C..C Units

I

T(AV)

I

T(RMS)

I

TSM

@ T

hs

@ T

hs

@ 50Hz 5700 A
@ 60Hz 5970 A

410 A

55 °C

780 A

25 °C

case style TO-200AB (A-PUK)

I2t@

V

DRM/VRRM

t

q

T

J

50Hz 163 KA2s

@ 60Hz 149 KA2s

typical 100 µs

400 to 1600 V

- 40 to 125 °C

ST230C..C Series

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ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

Type number Code peak and off-state voltage repetitive peak voltage @ T

, max. repetitive V

, maximum non- I

RSM

DRM/IRRM

J

VVmA

04 400 500
08 800 900

ST230C..C 12 1200 1300 30

14 1400 1500
16 1600 1700

On-state Conduction

Parameter ST230C..C Units Conditions

I

T(AV)

I

T(RMS)

I

TSM

2

t Maximum I2t for fusing 163 t = 10ms No voltage Initial TJ = TJ max.

I

2

I
V

V

Max. average on-state current 410 (165) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled

Max. RMS on-state current 780 DC @ 25°C heatsink temperature double side cooled
Max. peak, one-cycle 5700 t = 10ms No voltage
non-repetitive surge current 5970 A t = 8.3ms reapplied

4800 t = 10ms 100% V

RRM

5000 t = 8.3ms reapplied Sinusoidal half wave,

148 t = 8.3ms reapplied

KA2s

115 t = 10ms 100% V

RRM

105 t = 8.3ms reapplied

√t Maximum I2√t for fusing 1630 KA2√s t = 0.1 to 10ms, no voltage reapplied

Low level value of threshold

T(TO)

1

voltage

0.92 (16.7% x π x I

< I < π x I

T(AV)

), TJ = TJ max.

T(AV)

V

High level value of threshold

T(TO)

2

voltage

0.98 (I > π x I

),TJ = TJ max.

T(AV)

max.

= TJ max

r

Low level value of on-state

t1

slope resistance

r

High level value of on-state

t2

slope resistance
V
I

H

I

L

Max. on-state voltage 1.69 V Ipk= 880A, TJ = TJ max, tp = 10ms sine pulse

TM

Maximum holding current 600

Max. (typical) latching current 1000 (300)

Switching

Parameter ST230C..C Units Conditions

di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs

of turned-on current T

t

d

Typical delay time 1.0

t

q

Typical turn-off time 100

0.88 (16.7% x π x I
mΩ

0.81 (I > π x I

T(AV)

mA TJ = 2 5 ° C , anode supply 12V resistive load

1000 A/µs

= TJ max, anode voltage ≤ 80% V

J

Gate current 1A, d ig/dt = 1A/µs

= 0.67% V

V

µs

d

I

= 300A, TJ = TJ max, di/dt = 20A/µs, VR = 50V

TM

= 20V/µs, Gate 0V 100Ω, tp = 500µs

dv/dt

< I < π x I

T(AV)

),TJ = TJ max.

= 25°C

DRM, TJ

), TJ = TJ max.

T(AV)

DRM

Blocking

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ST230C..C Series

Parameter ST230C..C Units Conditions

dv/dt Maximum critical rate of rise of

I

DRM

I

RRM

Max. peak reverse and off-state
leakage current

Triggering

Parameter ST230C..C Units Conditions

P
P
I
+V

-V

I

V

I

V

Maximum peak gate power 10.0 TJ = TJ max, tp ≤ 5ms

GM

Maximum average gate power 2.0 TJ = TJ max, f = 50Hz, d% = 50

G(AV)

Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms

GM

Maximum peak positive

GM

gate voltage
Maximum peak negative

GM

gate voltage

DC gate current required

GT

to trigger

DC gate voltage required

GT

to trigger

DC gate current not to trigger 10 mA

GD

DC gate voltage not to trigger 0.25 V

GD

500 V/µ sTJ = TJ max. linear to 80% rated V

off-state voltage

30 mA TJ = TJ max, rated V

W

20

VT

= TJ max, tp ≤ 5ms

J

5.0

TYP. MAX.

180 -

90 150
40 -

2.9 -

1.8 3.0

1.2 -

mA T

VTJ = 25°C

= - 40°C

T

J

= 25°C

J

TJ = 125°C
TJ = - 40°C

= 125°C

T

J

Max. required gate trigger/ cur­rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied

Max. gate current/voltage not to

T

= TJ max

J

trigger is the max. value which
will not trigger any unit with rated
V

DRM

DRM

DRM/VRRM

applied

anode-to-cathode applied

Thermal and Mechanical Specification

Parameter ST230C..C Units Conditions

Max. operating temperature range -40 to 125

T

J

Max. storage temperature range -40 to 150

T

stg

R

Max. thermal resistance, 0.17 D C operation single side cooled

thJ-hs

junction to heatsink 0.08 DC operation double side cooled
Max. thermal resistance, 0.033 DC operation single side cooled

R

thC-hs

case to heatsink 0.017 DC operation double side cooled

F Mounting force, ± 10% 4900 N

wt Approximate weight 50 g

Case style TO - 200AB (A-PUK) See Outline Table

°C

K/W

K/W

(500) (Kg)

ST230C..C Series

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∆R

(The following table shows the increment of thermal resistence R

Conduction

thJ-hs

when devices operate at different conduction angles than DC)

thJ-hs

Conduction angle Units Conditions

180° 0.015 0.017 0.011 0.011 T
120° 0.018 0.019 0.019 0.019

90° 0.024 0.024 0.026 0.026 K/ W
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061

Sinusoidal conduction Rectangular conduction

Single Side Double Side Single Side Double Side

= TJ max.

J

Ordering Information Table

Device Code

ST 23 0 C 16 C 1

12

1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V
6 - C = Puk Case TO-200AB (A-PUK)
7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)

1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)

8 - Critical dv/dt: None = 500V/µsec (Standard selection)

L = 1000V/µsec (Special selection)

3 4

(See Voltage Rating Table)

RRM

5

7

6

8

Outline Table

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ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.

19 (0.75)

DIA. MAX.

19 (0.75)

DIA. MAX.

38 (1.50) DIA MAX.

2 HOLES 3.56 (0.14) x

1.83 (0.07) MIN. DEEP

GATE TERM. FOR

1.47 (0.06) DIA.
PIN RECEPTACLE

0.3 (0.01) MIN.

6.5 (0.26)

ST230C..C Series

13.7 / 14.4

(0.54 / 0.57)

0.3 (0.01) MIN.

Case Style TO-200AB (A-PUK)

All dimensions in millimeters (inches)

130
120
110
100

90
80
70
60
50
40

0 40 80 120 160 200 240 280 320

Max imum Al lowabl e Heatsink Te mperat ur e (°C)

Average O n-state Curr ent ( A)

ST230C..C Series
(Single Side Cooled)
R (DC) = 0 .1 7 K /W

thJ-hs

Conduction Angle

30°

60°

90°

120°

42 (1.65) MAX.

180°

28 (1.10)

4.75 (0.19)

25°± 5°

130
120
110
100

90
80
70
60
50
40
30
20

0 100 200 300 400 500

M aximum Allow able Heatsink Temperature (° C)

Average On-state Current (A)

ST230C..C Series
(Single Side Cooled)
R (DC) = 0 .17 K/W

thJ-hs

Conduction P er i od

30°

60°

90°

120°

180°

DC

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

ST230C..C Series

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130
120
110
100

90
80
70
60
50
40
30
20

0 100 200 300 400 500 600

M aximum Allow able Heatsi nk Temperature (°C)

Average On-state Curr e nt ( A )

Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics

1100
1000

Maximu m A v e r age On- state Power Loss (W )

900
800
700
600
500
400
300
200
100

0

180°
120°

90°
60°
30°

0 100 200 300 400 500 600

ST230C..C Series
(Doubl e Side Cool ed)
R (DC) = 0 .08 K/W

thJ-hs

Conduction Angle

30°

60°

90°

120°

Conduction Angle

ST 230C..C Series
T = 1 25°C

J

180°

RMS Lim it

130
120
110
100

90
80
70
60
50
40
30
20

0 100 200 300 400 500 600 700 800

M aximum Allowable Heatsi nk Temperatur e (°C)

1400

1200

1000

800

600

400

200

0

Ma ximum A v e rage On- state P ower Loss (W)

0 100 200 300 400 500 600 700 800 900

30°

Ave rage On- state Cu rr e nt ( A )

DC
180°
120°

90°
60°
30°

RMS Lim it

ST230C..C Series
(Doubl e Side C ool ed)
R (DC) = 0.08 K/W

thJ-hs

Conduction P er i od

60°

90°

120°

180°

Conduction P er iod

ST230C .. C Seri e s
T = 125°C

J

DC

Aver age On-state Current (A)

Fig. 5- On-state Power Loss Characteristics Fig. 6- On-state Power Loss Characteristics

5500

5000

4500

4000

3500

3000

2500

Peak Half Sine Wave On-state Current (A)

2000

Number Of Equal Amplitude Half Cycle Current Pulses (N)

At Any Rated Load C ondi t ion An d Wi th

Rated V A pplie d Fo ll owing Sur ge.

ST230 C..C Series

110100

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

RRM

Initial T = 125 °C

J

@ 60 Hz 0.0083 s
@ 50 H z 0.0100 s

Average On- state Current (A)

6500

Maximum Non R epetitive Surge Current

6000
5500
5000
4500
4000
3500
3000
2500

P eak Half Sine Wave On-state Cur rent (A)

2000

0.01 0.1 1

Fig. 8 - Maximum Non-Repetitive Surge Current

Ver sus Pulse Train D uration. C ontrol

Of Conduct ion May Not Be Maintained.

Initial T = 125°C

No Volt age Reapplied
Rated V Re applied

ST230 C ..C Se r ie s

Pulse Train D uration (s)

Single and Double Side Cooled

RRM

J

ST230C..C Series

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10000

T = 25°C

J

T = 125 °C

J

1000

ST230C..C Series

I nstantane ous On-state Current (A )

100

0.511.522.533.544.55
Instantan eous O n-state Voltage (V)

Fig. 9 - On-state Voltage Drop Characteristics

1

Steady State Valu e
R = 0.17 K/W

thJ -hs

thJ-hs

(Single Side Cooled)
R = 0.08 K/W

0.1

thJ -hs

(Double Side Cooled)
( D C Op eration)

0.01

0.001

Transient Thermal Impedance Z (K/W)

0.001 0.01 0.1 1 10

100

Rectangular gate pulse
a) Re comme nded load line for
rated di/dt : 20V, 10 ohms; tr<=1 µs
b) Re com me n ded l oad line for

<=30 % rated di/dt : 10V , 10ohms

10

tr<=1 µs

1

In stantaneous G ate Vol tage (V)

0.1

0.001 0.01 0.1 1 10 100

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

Tj=125 °C

VGD

IGD

De vice: ST23 0C..C Series

Instantaneous Gate Cur rent (A)

ST230C..C S eries

Characteristics

thJ-hs

(1) PGM = 1 0W, tp = 4ms
(2) PGM = 2 0W, tp = 2ms
(3) PGM = 4 0W, tp = 1ms
(4) PGM = 6 0W, tp = 0.66ms

(a)

(b)

Tj =- 40 ° C

T j=25 °C

(1) (2) (3)

Frequency Limited by PG(AV )

(4)

Fig. 11 - Gate Characteristics