Datasheet ST203S10PFJ0L, ST203S10PFJ0, ST203S10MFJ2L, ST203S10MFJ2, ST203S10MFJ1L Datasheet (International Rectifier)

D-470

DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

ST203S SERIES

INVERTER GRADE THYRISTORS

Stud Version

205A

D-471

Bulletin I25177/B

Features

All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance

Typical Applications

Inverters
Choppers
Induction heating
All types of force-commutated converters

I

T(AV)

205 A

@ T

C

85 °C

I

T(RMS)

320 A

I

TSM

@ 50Hz 5260 A
@ 60Hz 5510 A

I

2

t @ 50Hz 138 KA2s

@ 60Hz 126 KA

2

s

V

DRM/VRRM

1000 to 1200 V

t

q

range 20 to 30 µs

T

J

- 40 to 125 °C

Parameters ST203S Units

Major Ratings and Characteristics

case style

TO-209AB (TO-93)

ST203S Series

D-472

Voltage V

DRM/VRRM

, maximum V

RSM

, maximum I

DRM/IRRM

max.

Type number Code repetitive peak voltage non-repetitive peak voltage

@ TJ = TJ max.

V V mA

10 1000 1100
12 1200 1300

ELECTRICAL SPECIFICATIONS

Voltage Ratings

ST203S 40

Frequency Units

50Hz 580 400 900 640 6180 4680
400Hz 570 380 940 650 2980 2150

1000Hz 520 320 930 630 1730 1200 A
2500Hz 370 210 780 510 890 580
Recovery voltage Vr 50 50 50 50 50 50

Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 60 85 60 85 60 85 °C
Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF

I

TM

180oel

180

o

el

100µs

I

TM

I

TM

Current Carrying Capability

V

I

T(AV)

Max. average on-state current 205 A 180° conduction, half sine wave
@ Case temperature 85 °C

I

T(RMS)

Max. RMS on-state current 320 DC @ 76°C case temperature

I

TSM

Max. peak, one half cycle, 5260 t = 10ms No voltage
non-repetitive surge current 5510 A t = 8.3ms reapplied

4420 t = 10ms 100% V

RRM

4630 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 138 t = 10ms No voltage Initial TJ = TJ max

126 t = 8.3ms reapplied

98 t = 10ms 100% V

RRM

89 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 1380 KA2√s t = 0.1 to 10ms, no voltage reapplied

Parameter ST203S Units Conditions

On-state Conduction

KA2s

ST203S Series

D-476

Fig. 3 - On-state Power Loss Characteristics

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Fig. 4 - On-state Power Loss Characteristics

ST203S Series

D-477

Fig. 7 - On-state Voltage Drop Characteristics

Fig. 8 - Thermal Impedance Z

thJC

Characteristic

Fig. 10 - Reverse Recovery Current Characteristics

Fig. 9 - Reverse Recovered Charge Characteristics

Fig. 5 - Maximum Non-repetitive Surge Current

Fig. 6 - Maximum Non-repetitive Surge Current

ST203S Series

D-478

Fig. 13 - Frequency Characteristics

Fig. 11 - Frequency Characteristics

Fig. 12 - Frequency Characteristics

ST203S Series

D-479

Fig. 14 - Maximum On-state Energy Power Loss Characteristics

Fig. 15 - Gate Characteristics

ST203S Series

D-473

VTMMax. peak on-state voltage 1.72 ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse
V

T(TO)1

Low level value of threshold
voltage

V

T(TO)2

High level value of threshold
voltage

r

t

1

Low level value of forward
slope resistance

r

t

2

High level value of forward
slope resistance

I

H

Maximum holding current 600 TJ = 25°C, IT > 30A

I

L

Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

Parameter ST203S Units Conditions

On-state Conduction

1.17 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.20 (I > π x I

T(AV)

), TJ = TJ max.

V

0.92 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

0.87 (I > π x I

T(AV)

), TJ = TJ max.

mΩ

mA

di/dt Max. non-repetitive rate of rise T

J

= TJ max, V

DRM

= rated V

DRM

of turned-on current I

TM

= 2 x di/dt

T

J

= 25°C, V

DM

= rated V

DRM, ITM

= 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T

J

= TJ max, I

TM

= 300A, commutating di/dt = 20A/µs

V

R

= 50V, tp = 500µs, dv/dt: see table in device code

Switching

Parameter ST203S Units Conditions

1000 A/µs

t

d

Typical delay time 0.79

Min Max

dv/dt Maximum critical rate of rise of T

J

= TJ max., linear to 80% V

DRM

, higher value

off-state voltage available on request

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Parameter ST203S Units Conditions

Blocking

500 V/µs

40 mA T

J

= TJ max, rated V

DRM/VRRM

applied

PGMMaximum peak gate power 60
P

G(AV)

Maximum average gate power 10

I

GM

Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

I

GT

Max. DC gate current required
to trigger

V

GT

Max. DC gate voltage required
to trigger

I

GD

Max. DC gate current not to trigger 20 mA

V

GD

Max. DC gate voltage not to trigger 0.25 V

Triggering

Parameter ST203S Units Conditions

20

5

V TJ = TJ max, tp ≤ 5ms

200 mA

3 V

T

J

= 25°C, VA = 12V, Ra = 6Ω

TJ = TJ max, rated V

DRM

applied

µs

W TJ = TJ max, f = 50Hz, d% = 50

t

q

Max. turn-off time 20 30

ST203S Series

D-474

Ordering Information Table

TJMax. junction operating temperature range -40 to 125
T

stg

Max. storage temperature range -40 to 150

R

thJC

Max. thermal resistance, junction to case 0.105 DC operation

R

thCS

Max. thermal resistance, case to heatsink 0.04 Mounting surface, smooth, flat and greased

T Mounting torque, ± 10% 31 Nm

(275) (Ibf-in)

24.5 Nm

(210) (Ibf-in)

wt Approximate weight 280 g

Case style TO-209AB (TO-93) See Outline Table

Parameter ST203S Units Conditions

Thermal and Mechanical Specifications

°C

K/W

Non lubricated threads

180° 0.016 0.012
120° 0.019 0.020

90° 0.025 0.027 K/W T

J

= TJ max.
60° 0.036 0.037
30° 0.060 0.060

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

5

6

8

9

ST 20 3 S 12 P F J 0

3

4

10

7

Device Code

1

2

Lubricated threads

1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - S = Compression bonding Stud
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Ratings table)

6 - P = Stud base 3/4" 16UNF-2A

M = Stud base metric threads M16/ x 1.5

7 - Reapplied dv/dt code (for t

q

test condition)

8 - t

q

code

9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads)

1 = Fast-on terminals (Gate and Aux. Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)

- Critical dv/dt:
None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)

dv/dt - t

q

combinations available

dv/dt (V/µs) 20 50 100 200 400

20 CK DK EK -- -­25 CJ DJ EJ FJ * -­30 CH DH EH FH HH

tq(µs)

∆R

thJC

Conduction

(The following table shows the increment of thermal resistence R

thJC

when devices operate at different conduction angles than DC)

*Standard part number.

All other types available only on request.

10

ST203S Series

D-475

Case Style TO-209AB (TO-93)

All dimensions in millimeters (inches)

Fast-on Terminals

Outline Table

C.S. 0.4 mm

2

10 (0.39)

RED SHRINK

RED CATHODE

RED SILICON RUBBER

4.3 (0.17) DIA

21 (0 .8 3)

12.5 (0.49) MA X .

15 7 (6.18)

170 (6.69 )

(.0006 s.i.)

8.5 (0.33) DIA.

16.5 (0.65) MAX.

MAX.

70 (2.75) M IN .

CERAMIC HOUSING

22.5 (0.88) MAX. DIA.

29 (1 .14) MAX.

SW 27

C.S. 16mm

2

FLEXIBLE LEAD

(.025 s.i.)

2.6 (0.10) MAX.

WHITE SHRINK

2

0

(

0

.

7

9

)

M

I

N

.

29.5 (1.16)

MAX.

1/2"-20UNF-2A

9

.

5

(

0

.

3

7

)

M

I

N

.

WHITE GATE

215 (8.46)

Case Style TO-209AB (TO-93) Flag

All dimensions in millimeters (inches)

CERAMIC HOUSING

27 .5 (1 .08 ) M A X .

38 .5 (1 . 5 2 ) M A X .

3 (0.12)

8 0 ( 3 .15 ) M A X .

DIA. 27.5 (1.08) MAX.

1 6 (0 .63 ) M A X .

FLAG TERMINALS

1.5 (0.06) DIA.

SW 32

22 (0.89)

DIA. 6.5 (0.25)

13 (0. 5 1)

14 (0.55)

*FOR METRIC DEVICE. M16 X 1.5 - LENGHT 21 (0.83) MAX.

3/4"-16UNF-2A*

AMP. 280000-1

REF-250