Datasheet ST183C08CHK3L, ST183C08CHK3, ST183C08CHK2L, ST183C08CHK2, ST183C08CHK1L Datasheet (International Rectifier)

D-520

DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

370A

INVERTER GRADE THYRISTORS Hockey Puk Version

ST183C..C SERIES

D-521

Bulletin I25178/A

Typical Applications

Inverters
Choppers
Induction heating
All types of force-commutated converters

Features

Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance

case style TO-200AB (A-PUK)

I

T(AV)

370 A

@ T

hs

55 °C

I

T(RMS)

690 A

@ T

hs

25 °C

I

TSM

@ 50Hz 4900 A
@ 60Hz 5130 A

I

2

t @ 50Hz 120 KA2s

@ 60Hz 110 KA

2

s

V

DRM/VRRM

400 to 800 V

t

q

range 10 to 20 µs

T

J

- 40 to 125 °C

Parameters ST183C..C Units

Major Ratings and Characteristics

ST183C..C Series

D-522

ST183C..C 40

Voltage V

DRM/VRRM

, maximum V

RSM

, maximum I

DRM/IRRM

max.

Type number Code repetitive peak voltage non-repetitive peak voltage

@ TJ = TJ max.

V V mA

04 400 500
08 800 900

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Frequency Units

50Hz 770 660 1220 1160 5450 4960
400Hz 730 600 1270 1090 2760 2420

1000Hz 600 490 1210 1040 1600 1370 A
2500Hz 350 270 860 730 800 680
Recovery voltage Vr 50 50 50 50 50 50

Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 47Ω / 0.22µF 47Ω / 0.22µF 47Ω / 0.22µF

I

TM

180oel

180

o

el

100µs

I

TM

I

TM

Current Carrying Capability

V

I

T(AV)

Max. average on-state current 370 (130) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled

I

T(RMS)

Max. RMS on-state current 690 DC@ 25°C heatsink temperature double side cooled

I

TSM

Max. peak, one half cycle, 4900 t = 10ms No voltage
non-repetitive surge current 5130 A t = 8.3ms reapplied

4120 t = 10ms 100% V

RRM

4310 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 120 t = 10ms No voltage Initial TJ = TJ max

110 t = 8.3ms reapplied

85 t = 10ms 100% V

RRM

78 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 1200 KA2√s t = 0.1 to 10ms, no voltage reapplied

Parameter ST183C..C Units Conditions

On-state Conduction

KA2s

ST183C..C Series

D-526

Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics

Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics

Fig. 7 - Maximum Non-repetitive Surge Current

Single and Double Side Cooled

Fig. 8 - Maximum Non-repetitive Surge Current

Single and Double Side Cooled

ST183C..C Series

D-527

Fig. 9 - On-state Voltage Drop Characteristics

Fig. 10 - Thermal Impedance Z

thJ-hs

Characteristics

Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics

Fig. 13 - Frequency Characteristics

ST183C..C Series

D-528

Fig. 14 - Frequency Characteristics

Fig. 15 - Frequency Characteristics

Fig. 16 - Maximum On-state Energy Power Loss Characteristics

ST183C..C Series

D-529

Fig. 17 - Gate Characteristics

ST183C..C Series

D-523

VTMMax. peak on-state voltage 1.80 ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse
V

T(TO)1

Low level value of threshold
voltage

V

T(TO)2

High level value of threshold
voltage

r

t

1

Low level value of forward
slope resistance

r

t

2

High level value of forward
slope resistance

I

H

Maximum holding current 600 TJ = 25°C, IT > 30A

I

L

Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

Parameter ST183C..C Units Conditions

On-state Conduction

1.40 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.45 (I > π x I

T(AV)

), TJ = TJ max.

V

0.67 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

0.58 (I > π x I

T(AV)

), TJ = TJ max.

mΩ

mA

di/dt Max. non-repetitive rate of rise T

J

= TJ max, V

DRM

= rated V

DRM

of turned-on current I

TM

= 2 x di/dt

T

J

= 25°C, V

DM

= rated V

DRM, ITM

= 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T

J

= TJ max, I

TM

= 300A, commutating di/dt = 20A/µs

V

R

= 50V, tp = 500µs, dv/dt: see table in device code

Switching

Parameter ST183C..C Units Conditions

1000 A/µs

t

d

Typical delay time 1.1

Min Max

dv/dt Maximum critical rate of rise of T

J

= TJ max. linear to 80% V

DRM

, higher value

off-state voltage available on request

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Parameter ST183C..C Units Conditions

Blocking

500 V/µs

40 mA T

J

= TJ max, rated V

DRM/VRRM

applied

PGMMaximum peak gate power 60
P

G(AV)

Maximum average gate power 10

I

GM

Max. peak positive gate current 10 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

I

GT

Max. DC gate current required
to trigger

V

GT

Max. DC gate voltage required
to trigger

I

GD

Max. DC gate current not to trigger 20 mA

V

GD

Max. DC gate voltage not to trigger 0.25 V

Triggering

Parameter ST183C..C Units Conditions

20

5

V TJ = TJ max, tp ≤ 5ms

200 mA

3 V

T

J

= 25°C, VA = 12V, Ra = 6Ω

TJ = TJ max, rated V

DRM

applied

t

q

Max. turn-off time 10 20

µs

W TJ = TJ max, f = 50Hz, d% = 50

ST183C..C Series

D-524

TJMax. operating temperature range -40 to 125
T

stg

Max. storage temperature range -40 to 150

R

thJ-hs

Max. thermal resistance, 0.17 DC operation single side cooled
junction to heatsink 0.08 DC operation double side cooled

R

thC-hs

Max. thermal resistance, 0.033 DC operation single side cooled
case to heatsink 0.017 DC operation double side cooled

F Mounting force, ± 10% 4900 N

(500) (Kg)

wt Approximate weight 50 g

Parameter ST183C..C Units Conditions

K/W

Thermal and Mechanical Specification

°C

Case style TO - 200AB (A-PUK) See Outline Table

K/W

Single Side Double Side Single Side Double Side
180° 0.015 0.016 0.011 0.011
120° 0.018 0.019 0.019 0.019

90° 0.024 0.024 0.026 0.026 K/W T

J

= TJ max.
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061

Sinusoidal conduction Rectangular conduction

Conduction angle Units Conditions

∆R

thJ-hs

Conduction

(The following table shows the increment of thermal resistence R

thJ-hs

when devices operate at different conduction angles than DC)

Ordering Information Table

5

6

8

9

ST 18 3 C 08 C H K 1

3

4

10

7

Device Code

1 2

dv/dt - tq combinations available

dv/dt (V/µs) 20 50 100 200 400

10 CN DN EN FN* HN
12 CM DM EM FM HM
15 CL DL EL FL* HL
18 CP DP EP FP HP
20 CK DK EK FK HK

tq(µs)

*Standard part number.

All other types available only on request.

1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Rating Table)

6 - C = Puk Case TO-200AB (A-PUK)
7 - Reapplied dv/dt code (for t

q

test condition)

8 - t

q

code

9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)

1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)

3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)

- Critical dv/dt:
None = 500V/µsec (Standard value)

L = 1000V/µsec (Special selection)

10

ST183C..C Series

D-525

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Case Style TO-200AB (A-PUK)

All dimensions in millimeters (inches)

Outline Table

DIA. MAX.

4.75 (0.19)

28 (1.10)

6.5 (0.26)

19 (0.75)

0.3 (0.01) MIN.

0.3 (0.01) MIN.

13.7 / 14.4

(0.54 / 0.57)

25°± 5°

GATE TERM. FOR

1.47 (0.06) DIA.
PIN RECEPTACLE

ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.

19 (0.75)

DIA. MAX.

38 (1.50) DIA MAX.

2 HOLES 3.56 (0.14) x

1.83 (0.07) MIN. DEEP

42 (1.65) MAX.