Datasheet ST180SPbF Series DataSheet (Vishay)

TO-209AB (TO-93)

PRODUCT SUMMARY

I

T(AV)

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 200 A

FEATURES

• Center amplifying gate

• International standard case TO-209AB (TO-93)

• Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200 V)

• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

200 A

• Controlled DC power supplies

• AC controllers

ST180SPbF Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 5000

60 Hz 5230

50 Hz 125

60 Hz 114

Typical 100 µs

200 A

85 °C

314 A

400 to 2000 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE
NUMBER

ST180S

V

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

20 2000 2100

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

A

kA2s

MAXIMUM

= TJ MAXIMUM

J

mA

30

Document Number: 94397 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

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ST180SPbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 200 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1250 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Maximum (typical) latching current I

T(AV)

180° conduction, half sine wave

DC at 76 °C case temperature 314

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 5230

t = 10 ms

t = 8.3 ms 4400

t = 10 ms

t = 8.3 ms 114

t = 10 ms

t = 8.3 ms 81

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 570 A, TJ = 125 °C, tp = 10 ms sine pulse 1.75 V

TJ = TJ maximum, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.14

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.14

T(AV)

), TJ = TJ maximum 1.08

T(AV)

), TJ = TJ maximum 1.18

T(AV)

200 A

85 °C

5000

4200

125

88

600

1000 (300)

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise
of off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 30 mA

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Document Number: 94397

2 Revision: 11-Aug-08

ST180SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 200 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 90 150

J

T

= 125 °C 40 -

J

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

T

J

T

= 125 °C 1.2 -

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

DRM

anode to

cathode applied

VALUES

TYP. MAX.

180 -

0.25 V

UNITS

20

5.0

mAT

10 mA

W

V

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

R

R

T

J

Stg

thJC

thC-hs

DC operation 0.105

Mounting surface, smooth, flat and greased 0.04

Non-lubricated threads

Mounting torque, ± 10 %

Lubricated threads

Approximate weight 280 g

Case style See dimensions - link at the end of datasheeet TO-209AB (TO-93)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE

SINUSOIDAL

CONDUCTION

RECTANGULAR

CONDUCTION

TEST CONDITIONS UNITS

180° 0.015 0.012

120° 0.019 0.020

T

90° 0.025 0.027

= TJ maximum K/W

J

60° 0.036 0.037

30° 0.060 0.060

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

Document Number: 94397 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 3

- 40 to 125

- 40 to 150

31

(275)

24.5

(210)

°C

K/W

N · m

(lbf ⋅ in)

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ST180SPbF Series

Vishay High Power Products

130

120

110

100

90

80

Maximum Allowable Case Temperature (°C)

0 40 80 120 160 200 240

ST1 80 S Se r i e s
R (DC) = 0.105 K/ W

thJC

Conduc tion Ang le

30°

60°

90°

120°

180°

Ave rage O n-sta t e Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

350

300

250

200

180°
120°

90°
60°
30°

RM S Lim i t

150

100

50

0

Maximum Average On-state Power Loss (W)

0 40 80 120 160 200 24 0

Average On-state Current (A)

Phase Control Thyristors

(Stud Version), 200 A

130

120

110

100

90

80

70

Maximum Allowable Case Temperature (°C)

0 50 100 150 200 250 300 350

R

t

h

S

0.

0

.

1

6

K

0

.

2

K

/

W

0

.

3

K

/

W

0

.

4

K

/

W

0

.

5

K

/

Conduction Angle

ST1 8 0 S Se r i e s
T = 1 2 5° C

J

W

0

.

8

K

/

W

1

.

2

K

/

W

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - On-State Power Loss Characteristics

A

1

=

K/

0

W

.

/

W

0

8

K

/

W

­D

ST1 8 0S Se r i e s
R (DC) = 0.105 K/ W

thJC

Conduction Period

30°

60°

90°

120°

180°

Av era ge On-st at e Cu rre nt (A)

e

l

t

a

R

DC

500

450

400

350

300

250

200

150

100

50

0

Maximum Average On-state Power Loss (W)

DC
180°
120°

90°
60°
30°

RM S Li m it

Conduc tion Period

ST180S Se ries
T = 1 2 5° C

J

0 40 80 120 160 200 240 280 320

25 50 75 100 125

Average On-state Current (A)

R

t

h

S

A

0

=

.

1

0

K

.

0

/

8

W

0

.

1

6

0

.

2

K

0

.

3

0

.

4

0

.

5

0

.

8

1

.

2

K

K

/

K

/

/

W

K

/

K

/

K

/

K/

/

W

-

W

W

W

W

W

W

D

e

l

t

a

R

Maximum Allowable Ambient Temperature (°C)

Fig. 4 - On-State Power Loss Characteristics

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Document Number: 94397

4 Revision: 11-Aug-08

ST180SPbF Series

Phase Control Thyristors

(Stud Version), 200 A

4800

At Any Rat ed Loa d Cond ition And With

Ra te d V Ap p lied Following Surg e.

4400

4000

3600

3200

2800

2400

ST1 8 0S Se r i e s

Pea k Ha l f Sine Wave On-stat e C urrent (A)

2000

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

RRM

Initia l T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

10000

Vishay High Power Products

5500

Maximum Non Repetitive Surge Current

5000

4500

4000

3500

3000

2500

Peak Half Sine Wave On-state Current (A)

2000

Fig. 6 - Maximum Non-Repetitive Surge Current

Versus Pulse Train Duration. Cont rol

Of Conduction May Not Be Maintained.

ST180S Serie s

0.01 0.1 1

Pulse Tra in D u rat ion (s)

Initi al T = 125°C

No Volt a ge Rea pp lie d
Ra t e d V Re a p p l ie d

J

RRM

1

thJC

0.1

0.01

1000

Instantaneous On-state Current (A)

100

Steady State Value

R = 0.105 K/ W

thJC

(DC Operation)

T = 25 ° C

J

T = 125°C

J

ST1 8 0 S Se r i e s

0.5 1 1.5 2 2.5 3 3.5 4 4. 5 5 5.5 6

Instantaneous On-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

ST1 8 0 S Se r i e s

Transient Thermal Impedance Z (K/ W)

0.001

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

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Revision: 11-Aug-08 5

ST180SPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rat e d di/ dt : 10V, 10oh ms

10

tr<=1 µs

1

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

VGD

Phase Control Thyristors

(Stud Version), 200 A

(a)

(b)

Tj = - 4 0 ° C

Tj = 25 ° C

Tj = 12 5 ° C

IGD

D e v i c e : ST18 0S Se r i es

In st a n t a n e o u s G a t e C ur r e n t ( A )

Fig. 9 - Gate Characteristics

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms

(1) (2)

Frequency Limited by PG(AV)

(3)

(4)

Device code

ST 18 0 S 20 P 0 PbF-

324

1

- Thyristor

2

- Essential part number

3

- 0 = Converter grade

4

- S = Compression bonding stud

5

- Voltage code x 100 = V

6

- P = Stud base 3/4"-16UNF2A threads

7

- 0 = Eyelet terminals (gate and auxiliary cathode leads)

51

6789

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode leads)

- V = Glass-metal seal (only up to 1200 V)

8

None = Ceramic housing (over 1200 V)

- Lead (Pb)-free

9

Note: For metric device M16 x 1.5 contact factory

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95082

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6 Revision: 11-Aug-08

Document Number: 94397

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

DIMENSIONS in millimeters (inches)

Glass metal seal

8.5 (0.33) DIA.

19 (0.75) MAX.

Outline Dimensions

Vishay High Power Products

TO-209AB (TO-93)

Case Style TO-209AB (TO-93)

4 (0.16) MAX.

4.3 (0.17) DIA.

9.5 (0.37) MIN.

Red silicon rubber

210 (8.26) ± 10 (0.39)

90 (3.54) MIN.

MAX.

38.5 (1.52)

27.5 (1.08) MAX.

Ceramic housing

8.5 (0.33) DIA.

Red silicon rubber

Red cathode

Red shrink

16 (0.63) MAX.

Red cathode

3/4"-16UNF-2A

35 (1.38) MAX.

19 (0.75) MAX.

C.S. 0.4 mm

(0.0006 s.i.)

White gate

White shrink

28.5 (1.12) MAX. DIA.

SW 32

(1)

4.3 (0.17) DIA.

C.S. 0.4 mm

(0.006 s.i.)

2

220 (8.66) ± 10 (0.39)

2

Flexible leads

C.S. 25 mm

(0.039 s.i.)

Flexible leads

C.S. 25 mm

(0.039 s.i.)

2

Fast-on terminals

AMP. 280000-1

REF-250

4 (0.16) MAX.

2

22 (0.86) MIN.

9.5 (0.37) MIN.

22 (0.86) MIN.

White gate

210 (8.26) ± 10 (0.39)

Red shrink

90 (3.54) MIN.

MAX.

38.5 (1.52)

27.5 (1.08) MAX.

16 (0.63) MAX.

35 (1.38) MAX.

White shrink

27.5 (1.08) MAX. DIA.

SW 32

3/4"-16UNF-2A

220 (8.66) ± 10 (0.39)

(1)

Note

(1)

For metric device: M16 x 1.5 - length 21 (0.83) maximum

Document Number: 95082 For technical questions concerning discrete products, contact: [e-mail]
Revision: 02-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1