Datasheet ST1200C20K3L, ST1200C20K3, ST1200C18K1, ST1200C18K0L, ST1200C18K0 Datasheet (International Rectifier)

Bulletin I25196/A

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ST1200C..K SERIES

PHASE CONTROL THYRISTORS Hockey Puk V ersion

1650A

Features

Center amplifying gate
Metal case with ceramic insulator
International standard case A-24 (K-PUK)
High profile hockey-puk

Typical Applications

DC motor controls
Controlled DC power supplies
AC controllers

Major Ratings and Characteristics

Parameters ST1200C..K Units

I

T(AV)

I

T(RMS)

I

TSM

@ T

hs

@ T

hs

@ 50Hz 30500 A
@ 60Hz 32000 A

1650 A

55 °C

3080 A

25 °C

case style A-24 (K-PUK)

I2t@

V

DRM/VRRM

t

q

T

J

50Hz 4651 KA2s

@ 60Hz 4250 KA2s

typical 200 µs

1200 to 2000 V

- 40 to 125 °C

ST1200C..K Series

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ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

Type number Code peak and off-state voltage repetitive peak voltage @ T

12 1200 1300
14 1400 1500

ST1200C..K 100

16 1600 1700
18 1800 1900
20 2000 2100

On-state Conduction

Parameter ST1200C..K Units Conditions

, max. repetitive V

, maximum non- I

RSM

DRM/IRRM

VVmA

max.

= TJ max

J

I

T(AV)

Max. average on-state current 1650 (700) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled

I

T(RMS)

I

TSM

Max. RMS on-state current 3080 DC @ 25°C heatsink temperature double side cooled
Max. peak, one-cycle 30500 t = 10ms No voltage
non-repetitive surge current 32000 A t = 8.3ms reapplied

25700 t = 10ms 100% V

RRM

26900 t = 8.3ms reapplied Sinusoidal half wave,

2

t Maximum I2t for fusing 4651 t = 10ms No voltage Initial TJ = TJ max.

I

4250 t = 8.3ms reapplied
3300 t = 10ms 100% V

KA2s

RRM

3000 t = 8.3ms reapplied

2

√t Maximum I2√t for fusing 46510 KA2√s t = 0.1 to 10ms, no voltage reapplied

I
V

V

r

t1

r

t2

V
I

H

I

L

Low level value of threshold

T(TO)

1

voltage
High level value of threshold

T(TO)

2

voltage
Low level value of on-state

slope resistance
High level value of on-state

slope resistance
Max. on-state voltage 1.73 V Ipk= 4000A, TJ = TJ max, tp = 10ms sine pulse

TM

0.91 (16.7% x π x I
V

1.01 (I > π x I

T(AV)

0.21 (16.7% x π x I

mΩ

0.19 (I > π x I

T(AV)

< I < π x I

T(AV)

),TJ = TJ max.

< I < π x I

T(AV)

),TJ = TJ max.

T(AV)

T(AV)

Maximum holding current 600
Typical latching current 1000

mA T

= 25°C , anode supply 12V resistive load

J

), TJ = TJ max.

), TJ = TJ max.

Switching

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Parameter ST1200C..K Units Conditions

ST1200C..K Series

di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs

of turned-on current T

t

d

t

q

Typical delay time 1.9

Typical turn-off time 200

1000 A/µs

µs

= TJ max, anode voltage ≤ 80% V

J

Gate current 1A, dig/dt = 1A/µs

= 0.67% V

V

d

I

= 550A, TJ = TJ max, di/dt = 40A/µs, VR = 50V

TM

= 20V/µs, Gate 0V 100Ω, tp = 500µs

dv/dt

DRM, TJ

= 25°C

Blocking

Parameter ST1200C..K Units Conditions

dv/dt Maximum critical rate of rise of

RRM
DRM

Max. peak reverse and off-state
leakage current

I
I

500 V/µs TJ = TJ max. linear to 80% rated V

off-state voltage

100 mA TJ = TJ max, rated V

DRM/VRRM

Triggering

Parameter ST1200C..K Units Conditions

P
P
I
+V

-V

I

V

I

V

Maximum peak gate power 16 TJ = TJ max, tp ≤ 5ms

GM

Maximum average gate power 3 TJ = TJ max, f = 50Hz, d% = 50

G(AV)

Max. peak positive gate current 3.0 A TJ = TJ max, tp ≤ 5ms

GM

Maximum peak positive

GM

gate voltage
Maximum peak negative

GM

gate voltage

20

5.0

W

VT

= TJ max, tp ≤ 5ms

J

TYP. MAX.

DC gate current required

GT

to trigger

100 200

50 -

1.4 -

200 -

DC gate voltage required

GT

1.1 3.0

to trigger

0.9 -

DC gate current not to trigger 10 mA

GD

DC gate voltage not to trigger 0.25 V

GD

mA T

VTJ = 25°C

= - 40°C

T

J

= 25°C

J

TJ = 125°C
TJ = - 40°C

= 125°C

T

J

= TJ max

T

J

Max. required gate trigger/ cur­rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied

Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V

anode-to-cathode applied

DRM

DRM

DRM

applied

ST1200C..K Series

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Thermal and Mechanical Specification

Parameter ST1200C..K Units Conditions

T

Max. operating temperature range -40 to 125

J

Max. storage temperature range -40 to 150

T

stg

R

Max. thermal resistance, 0.042 DC operation single side cooled

thJ-hs

junction to heatsink 0.021 DC operation double side cooled
Max. thermal resistance, 0.006 DC operation single side cooled

R

thC-hs

case to heatsink 0.003 DC operation double side cooled

F Mounting force, ± 10% 24500 N

(2500) (Kg)

wt Approximate weight 425 g

Case style A-24 (K-PUK) See Outline Table

°C

K/W

K/W

∆R

(The following table shows the increment of thermal resistence R

Conduction

thJ-hs

when devices operate at different conduction angles than DC)

thJ-hs

Sinusoidal conduction Rectangular conduction

Conduction angle Units Conditions

Single Side Double Side Single Side Double Side

180° 0.003 0.003 0.002 0.002 T
120° 0.004 0.004 0.004 0.004

90° 0.005 0.005 0.005 0.005 K/W
60° 0.007 0.007 0.007 0.007
30° 0.012 0.012 0.012 0.012

= TJ max.

J

Ordering Information Table

Device Code

ST 120 0 C 20 K 1

7

8

1 - Thyristor

3 4

51 2

6

2 - Essential part number
3 - 0 = Converter grade
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V
6 - K = Puk Case A-24 (K-PUK)
7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)

1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)

8 - Critical dv/dt: None = 500V/µsec (Standard selection)

(See Voltage Rating Table)

RRM

L = 1000V/µsec (Special selection)

Outline Table

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ST1200C..K Series

1 (0.04) MIN.
TWO PLACES

27.5 (1.0 8) MAX.

47.5 (1.87) DIA. MAX.

TWO PLACES

PIN RECEPTACLE

AMP. 60598-1

Case Style A-24 (K-PUK)

67 (2.6) DIA. MAX.

74.5 (2.9) DIA. MAX.

All dimensions in millimeters (inches)

20° ± 5°

4.75 (0.2) NOM.

130
120
110
100

90
80
70
60
50
40

0 200 400 600 800 1000 1200

M ax i m u m A l l o wable Heat sin k Temp er atu re (° C)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

30°

Average On-state Curr ent (A)

2 HOLES DIA. 3.5 (0.14) x

2.1 (0.1) DEEP

CREPAGE DESTANCE 28.88 (1.137) MIN.
STRIKE DISTANCE 17.99 (0.708) MIN.

ST120 0C..K S eries
(Single Side C ooled)
R (DC) = 0.0 4 2 K/W

thJ-hs

Conduction Angle

60°

90°

120°

180°

44 (1.73)

130
120
110
100

90
80
70
60
50
40
30
20

0 400 800 1200 1600 2000

Maxi mu m A l lowable Heatsink Temperatu re (° C)

Average O n-state Curr ent ( A)

ST120 0C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W

thJ-hs

Conduction Peri od

30°

60°

90°

120°

180°

DC

ST1200C..K Series

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130
120
110
100

90
80
70
60
50
40
30

0 400 800 1200 1600 2000

M axim u m Allo w able Heatsink Tempe rature (°C)

4000
3500
3000
2500
2000

Aver age On-state Curr ent (A)

Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics

RMS Lim it

ST12 00C..K Series
(Double Side Cooled)
R (DC) = 0 .021 K/W

thJ-hs

Conducti on An gle

30°

180°
120°

90°
60°
30°

60°

90°

120°

180°

130
120
110
100

90
80
70
60
50
40
30
20

0 500 1000 1500 2000 2500 3000 3500

Maxi mu m Allowable H eats ink Temper ature (° C)

5000

4000

3000

RMS Limi t

30°

Average On-state Cur rent (A)

DC
180°
120°

90°
60°
30°

ST 1200C..K Series
(Double Si de Cool ed)
R (DC) = 0 .0 21 K /W

thJ-hs

Conduction Period

90°

60°

120°

180°

DC

1500
1000

500

0

Max i mum Average On-state Power Loss (W)

0 400 800 1200 1600 2000

Average On-state Current ( A)

Fig. 5- On-state Power Loss Characteristics

28000
26000
24000
22000
20000

18000
16000
14000

Peak Half Sine Wave On -state Current (A)

12000

Nu mber Of Equal Amplitude H alf Cycle Cur r ent Pulses (N)

At Any Rated Load Co ndition And With

Rated V Applied Foll owing Surge.

ST1200C..K Series

110100

RRM

Conducti on A ngle

ST12 00C..K Series
T = 125°C

J

Initial T = 125°C

J

@ 60 H z 0.0083 s
@ 50 Hz 0.01 00 s

2000

1000

0

Ma ximum Average On -state Power Los s (W)

Peak Half Sine W ave On- state Curr ent (A)

0 500 1000 1500 2000 2500 3000 3500

Average On-state Current (A)

Fig. 6- On-state Power Loss Characteristics

32000
30000
28000
26000
24000
22000
20000
18000
16000
14000
12000

Maximum Non Repeti tive Surge Cu rr ent

Versus P ulse Trai n D u ration. Control

Of Condu ction May N ot Be Maintained.

ST120 0C..K Series

0.01 0.1 1
Pulse Train Duration (s)

Conducti on Peri od

ST1200C..K Series
T = 125°C

J

Initial T = 125°C

No Voltage Reap plied
Rated V Reappl ied

RRM

J

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 8 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

10000

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ST1200C..K Series

thJ-hs

0.1

0.01

1000

Instantaneous On-state Current (A)

100

0.5 1 1.5 2 2.5 3

Fig. 9 - On-state Voltage Drop Characteristics

Steady State V al ue
R = 0.04 2 K/W

thJ -hs

( Single Si de Co oled)
R = 0.02 1 K/W

thJ -hs

(D oubl e Side Cooled)
( D C O perati on )

T = 25°C

J

T = 125°C

J

ST120 0C..K S eries

Instantaneous On-state Voltage (V)

0.001

Transient Ther mal Impedance Z (K/ W)

0.001 0.01 0.1 1 10 100

100

Rectangular gate pulse
a) Recom mended load line for
rated di /dt : 20V, 10ohms; tr<=1 µs
b) Recom mended load line for
<=30 % rated di/dt : 10V, 10ohms

10

tr<=1 µs

1

Instantaneous G at e Vo ltage (V)

0.1

0.001 0.01 0.1 1 10 100

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

Tj=125 °C

VGD

IGD

Device: ST1200C..K Series

I n stantaneous Gate C u rre nt ( A)

ST 1200C..K Series

Characteristics

thJ-hs

(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms

(a)

(b)

Tj=- 4 0 °C

Tj=25 °C

(1) (2)

Frequency Limited by PG(AV)

(3)

Fig. 11 - Gate Characteristics