Datasheet ST110S16P2L, ST110S16P2, ST110S16P1L, ST110S16P1, ST110S16P0L Datasheet (International Rectifier)

Features

Center gate
Hermetic metal case with ceramic insulator

(Also available with glass-metal seal up to 1200V)
International standard case TO-209AC (TO-94)
Threaded studs UNF 1/2 - 20UNF2A
Compression Bonded Encapsulation for heavy duty

operations such as severe thermal cycling

Typical Applications

DC motor controls
Controlled DC power supplies
AC controllers

I

T(AV)

110 A

@ T

C

90 °C

I

T(RMS)

175 A

I

TSM

@ 50Hz 2700 A
@ 60Hz 2830 A

I2t@

50Hz 36.4 KA2s

@ 60Hz 33.2 KA2s

V

DRM/VRRM

400 to 1600 V

t

q

typical 100 µs

T

J

- 40 to 125 °C

Parameters ST110S Units

Major Ratings and Characteristics

case style

TO-209AC (TO-94)

110A

PHASE CONTROL THYRISTORS Stud Version

ST110S SERIES

Bulletin I25167/B

ST110S Series

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage V

DRM/VRRM

, max. repetitive V

RSM

, maximum non- I

DRM/IRRM

max.

Type number Code peak and off-state voltage repetitive peak voltage @ T

J

= TJ max

VVmA

04 400 500
08 800 900

ST110S 12 1200 1300 20

14 1400 1500
16 1600 1700

I

T(AV)

Max. average on-state current 110 A 180° conduction, half sine wave
@ Case temperature 90 °C

I

T(RMS)

Max. RMS on-state current 175 A DC @ 85°C case temperature

I

TSM

Max. peak, one-cycle 2700 t = 10ms No voltage
non-repetitive surge current 2830 t = 8.3ms reapplied

2270 t = 10ms 100% V

RRM

2380 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 36.4 t = 10ms No voltage Initial TJ = TJ max.

33.2 t = 8.3ms reapplied

25.8 t = 10ms 100% V

RRM

23.5 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 364 KA2√s t = 0.1 to 10ms, no voltage reapplied

V

T(TO)1

Low level value of threshold
voltage

V

T(TO)

2

High level value of threshold
voltage

r

t1

Low level value of on-state
slope resistance

r

t2

High level value of on-state
slope resistance

V

TM

Max. on-state voltage 1.52 V Ipk= 350A, TJ = TJ max, tp = 10ms sine pulse

I

H

Maximum holding current 600

I

L

Typical latching current 1000

0.90 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.79 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.81 (I > π x I

T(AV)

),TJ = TJ max.

Parameter ST110S Units Conditions

0.92 (I > π x I

T(AV)

),TJ = TJ max.

On-state Conduction

KA2s

V

mΩ

mA

T

J

= 25°C, anode supply 12V resistive load

A

di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs

of turned-on current T

J

= TJ max, anode voltage ≤ 80% V

DRM

Gate current 1A, d ig/dt = 1A/µs
V

d

= 0.67% V

DRM, TJ

= 25°C

I

TM

= 100A, TJ = TJ max, di/dt = 10A/µs, VR = 50V

dv/dt

= 20V/µs, Gate 0V 100Ω, tp = 500µs

Parameter ST110S Units Conditions

t

d

Typical delay time 2.0

Switching

t

q

Typical turn-off time 100

µs

500 A/µs

ST110S Series

dv/dt Maximum critical rate of rise of

off-state voltage

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Blocking

500 V/µs TJ = TJ max. linear to 80% rated V

DRM

Parameter ST110S Units Conditions

20 mA TJ = TJ max, rated V

DRM/VRRM

applied

T

J

Max. operating temperature range -40 to 125

T

stg

Max. storage temperature range -40 to 150

R

thJC

Max. thermal resistance,
junction to case

R

thCS

Max. thermal resistance,
case to heatsink

T Mounting torque, ± 10% 15.5 Non lubricated threads

(137)

14 Lubricated threads

(120)

wt Approximate weight 130 g

Parameter ST110S Units Conditions

0.195 DC operation

0.08 Mounting surface, smooth, flat and greased

Thermal and Mechanical Specification

P

GM

Maximum peak gate power 5 TJ = TJ max, tp ≤ 5ms

P

G(AV)

Maximum average gate power 1 TJ = TJ max, f = 50Hz, d% = 50

I

GM

Max. peak positive gate current 2.0 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

I

GT

DC gate current required TJ = - 40°C
to trigger mA T

J

= 25°C

TJ = 125°C

V

GT

DC gate voltage required TJ = - 40°C
to trigger V TJ = 25°C

T

J

= 125°C

I

GD

DC gate current not to trigger 10 mA

Parameter ST110S Units Conditions

20

5.0

Triggering

V

GD

DC gate voltage not to trigger 0.25 V

T

J

= TJ max

TYP. MAX.

180 -

90 150
40 -

2.9 -

1.8 3.0

1.2 ­Max. gate current/ voltage not to

trigger is the max. value which
will not trigger any unit with rated
V

DRM

anode-to-cathode applied

Max. required gate trigger/ cur­rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied

W

°C

K/W

Nm

(lbf-in)

Case style TO - 209AC (TO-94) See Outline Table

VT

J

= TJ max, tp ≤ 5ms

ST110S Series

Ordering Information Table

5

3 4

ST 11 0 S 16 P 0 V

7

6

89

∆R

thJC

Conduction

(The following table shows the increment of thermal resistence R

thJC

when devices operate at different conduction angles than DC)

Device Code

12

180° 0.035 0.025 TJ = TJ max.
120° 0.041 0.042

90° 0.052 0.056 K/ W
60° 0.076 0.079
30° 0.126 0.127

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

1 - Thyristor
2 - Essential part number
3 - 0 = Converter grade
4 - S = Compression bonding Stud
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Rating Table)

6 - P = Stud base 20UNF threads
7 - 0 = Eyelet terminals (Gate and Auxiliary Cathode Leads)

1 = Fast - on terminals (Gate and Auxiliary Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)

8 - V = Glass-metal seal (only up to 1200V)

None = Ceramic housing (over 1200V)

9 - Critical dv/dt: None = 500V/µsec (Standard value)

L = 1000V/µsec (Special selection)

ST110S Series

Fast-on Terminals

Case Style TO-209AC (TO-94)

All dimensions in millimeters (inches)

Outline Table

C.S. 0.4 mm

2

10 (0.39)

RED SHRINK

RED CATHODE

RED SILICON RUBBER

4.3 (0.17) DIA

21 (0.83)

12.5 (0.49) MAX.

157 (6.18)

170 (6.69)

(.0006 s.i.)

8.5 (0.33) DIA.

16.5 (0.65) MAX.

MAX.

70 (2.75) MIN.

CERAMIC HOUSING

22.5 (0.88) MAX. DIA.

29 (1.14) MAX.

SW 27

C.S. 16mm

2

FLEXIBLE LEAD

(.025 s.i.)

2.6 (0.10) MAX.

WHITE SHRINK

2

0

(

0

.

7

9

)

M

I

N

.

29.5 (1.16)
MAX.

1/2"-20UNF-2A

9

.

5

(

0

.

3

7

)

M

I

N

.

WHITE GATE

215 (8.46)

C.S. 0.4 mm

2

215 (8.46) 10 (0.39)

WHITE SHRINK

RED SHRINK

RED CATHODE

RED SILICON RUBBER

4.3 (0.17) DIA

21 (0.83)

12.5 (0.49) MAX.

157 (6.18)

170 (6.69)

(.0006 s.i.)

GLASS METAL SEAL

8.5 (0.33) DIA.

16.5 (0.65) MAX.

23.5 (0.93) MAX. DIA.

MAX.

29 (1.14) MAX.

70 (2.75) MIN.

C.S. 16mm

2

FLEXIBLE LEAD

(.025 s.i.)

2.6 (0.10) MAX.

2

0

(

0

.

7

9

)

M

I

N

.

29.5 (1.16) MAX.

1/2"-20UNF-2A

SW 27

9

.

5

(

0

.

3

7

)

M

I

N

.

WHITE GATE

AMP. 280000-1

REF-250

ST110S Series

Case Style TO-208AD (TO-83)

All dimensions in millimeters (inches)

Outline Table

10

1/2"-20UNF-2A

29.5 (1.16)

MAX.

MAX.

46 (1.81)

10

7.5

(0.30)

22.5 DIA.

16.5

(0.65)

12.5 (0.49)

5.2 (0.20) DIA.

29 (1 .14 )

(0.39)

(0.89) MAX.

21(0.83)

1.5 (0.06) DIA.

(0.39)

49 (1.93)

MAX.

CERAMIC HOUSING

FLAG TERMINALS

SW 27

2.4 (0.09)

10

1/2"-20UNF-2A

29.5 (1.16)

MAX.

46 (1.81)

23.5 DIA.

16.5

(0.65)

12.5 (0.49)

29 (1.14) MAX.

(0.93) MAX.

21(0.83)

1.5 (0.06) DIA.

(0.39)

49 (1.93)

MAX.

GLASS-METAL SEAL

FLAG TERMINALS

SW 27

2.4 (0.09)

10

7.5

(0.30)

5.2 (0.20) DIA.

(0.39)

ST110S Series

Fig. 2 - Current Ratings Characteristics

Fig. 4 - On-state Power Loss Characteristics

80

90

100

110

120

130

0 20406080100120

Max imu m A llowabl e C ase Temperature (°C)

30°

60°

90°

120°

180°

Aver age On-state Current (A)

Conduction Angle

ST110S Ser ie s
R (DC) = 0.195 K/W

thJC

Fig. 1 - Current Ratings Characteristics

80

90

100

110

120

130

0 20 40 60 80 100 120 140 160 180

DC

30°

60°

90°

120°

180°

Average O n-state Current ( A)

M aximum Allowa ble Case Temperature (°C)

Conduction P er i od

ST 1 10S Se ri es
R (DC) = 1 .95 K/W

thJC

25 50 75 100 125

Maxi mum All ow able A mbient Temper at ur e (° C)

R

=

0

.

1

K

/

W

-

D

e

l

t

a

R

t

h

S

A

0

.

2

K

/

W

0

.

3

K

/

W

0

.

4

K

/

W

0

.

6

K

/

W

0

.

8

K

/

W

1

K

/

W

0

.

5

K

/

W

1

.

2

K

/

W

0

20

40

60

80

100

120

140

160

180

200

220

0 20 40 60 80 100 120 140 160 180

DC
180°
120°

90°

60°

30°

RM S Limit

Conduction Period

Max imu m Average On- state Power Loss (W)

Aver age O n- state Cu r rent (A )

S T 110S Ser ie s
T = 1 25°C

J

25 50 75 100 125

M aximum Allowable Am bien t Temperatu re (°C)

R

=

0

.

1

K

/

W

-

D

e

l

t

a

R

0

.

2

K

/

W

0

.

3

K

/

W

0

.

4

K

/

W

0

.

5

K

/

W

0

.

6

K

/

W

1

K

/

W

0

.

8

K

/

W

1

.

2

K

/

W

t

h

S

A

0

20

40

60

80

100

120

140

160

020406080100120

180°
120°

90°
60°
30°

RMS Lim it

Conduction Angle

Max imu m Average On- state Power Loss (W)

Aver age On-state Current (A)

ST1 10S Se ri e s
T = 125°C

J

Fig. 3 - On-state Power Loss Characteristics

ST110S Series

1000

1200

1400

1600

1800

2000

2200

2400

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Pea k Ha lf Sine Wave On-state Current (A)

Initial T = 125°C

@ 60 Hz 0.0083 s
@ 50 H z 0.0100 s

ST110 S Series

J

At Any Rated Load C ondi t ion And Wi t h

Rated V Applied Following Surge.

RRM

1000

1200

1400

1600

1800

2000

2200

2400

2600

2800

0.01 0.1 1 10
Pulse Tr ain D uration ( s)

Maxi mum Non Repetitive Sur ge Current

Versus Pul se Train Duration. Control

Of Conduction May Not Be Maintained.

P eak H alf Sine W ave On-state Current (A)

Ini tial T = 1 25°C

N o V oltage Reappli ed
Rated V Re applied

J

RRM

S T 1 10S Series

10

100

1000

10000

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

T = 25° C

J

In stantaneou s On-sta t e Current ( A)

Instantaneous On-state Voltage (V)

T = 12 5°C

J

ST110 S Serie s

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

0.001

0.01

0.1

1

0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)

thJC

Transient Thermal Impedanc e Z (K/W)

ST11 0S Se rie s

Steady State Value
R = 0.195 K/ W
(DC Operation)

thJC

Fig. 8 - Thermal Impedance Z

thJC

Characteristic

Fig. 7 - On-state Voltage Drop Characteristics

ST110S Series

Fig. 9 - Gate Characteristics

0.1

1

10

100

0.001 0.01 0.1 1 10 100

VGD

IGD

(b)

(a)

Tj=25 ° C

Tj=125 °C

Tj=- 4 0 ° C

(1) (2) (3)

Instantaneou s Gate Cur rent (A)

Instantaneous Gate Voltage (V)

a) Recommended l oad li ne for
b) Recomm ended load li ne fo r

<=30% rated di/dt : 10V, 1 0ohms

Frequency Limited by PG(AV)

rate d di/dt : 20V, 1 0ohm s; tr<=1 µ s

tr<=1 µs

(1) PGM = 10 W , tp = 4ms
(2) PGM = 20 W , tp = 2ms
(3) PGM = 40 W , tp = 1ms
(4) PGM = 60 W , tp = 0.6 6ms

De vice: ST110S Se ri es

Rectangular gate pulse

(4)