Datasheet ST103S08PFN0L, ST103S08PFN0, ST103S04PFN2L, ST103S04PFN2, ST103S04PFN1L Datasheet (International Rectifier)

D-440

DISCRETE POWER DIODES and THYRISTORS

DATA BOOK

ST103S SERIES

INVERTER GRADE THYRISTORS

Stud Version

105A

D-441

Bulletin I25183/B

Features

All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance

Typical Applications

Inverters
Choppers
Induction heating
All types of force-commutated converters

I

T(AV)

105 A

@ T

C

85 °C

I

T(RMS)

165 A

I

TSM

@ 50Hz 3000 A
@ 60Hz 3150 A

I

2

t @ 50Hz 45 KA2s

@ 60Hz 41 KA

2

s

V

DRM/VRRM

400 to 800 V

t

q

range 10 to 25 µs

T

J

- 40 to 125 °C

Parameters ST103S Units

Major Ratings and Characteristics

case style

TO-209AC (TO-94)

ST103S Series

D-442

Voltage V

DRM/VRRM

, maximum V

RSM

, maximum I

DRM/IRRM

max.

Type number Code repetitive peak voltage non-repetitive peak voltage

@ TJ = TJ max.

V V mA

04 400 500
08 800 900

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Frequency Units

50Hz 280 180 440 330 4730 3630
400Hz 310 200 470 300 2500 1850

1000Hz 320 200 480 310 1530 1090 A
2500Hz 340 210 490 320 840 580
Recovery voltage Vr 50 50 50 50 50 50

Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 60 85 60 85 60 85 °C
Equivalent values for RC circuit 22Ω / 0.15µF 22Ω / 0.15µF 22Ω / 0.15µF

I

TM

180oel

180

o

el

100µs

I

TM

I

TM

Current Carrying Capability

V

I

T(AV)

Max. average on-state current 105 A 180° conduction, half sine wave
@ Case temperature 85 °C

I

T(RMS)

Max. RMS on-state current 165 DC @ 76°C case temperature

I

TSM

Max. peak, one half cycle, 3000 t = 10ms No voltage
non-repetitive surge current 3150 A t = 8.3ms reapplied

2530 t = 10ms 100% V

RRM

2650 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 45 t = 10ms No voltage Initial TJ = TJ max

41 t = 8.3ms reapplied
32 t = 10ms 100% V

RRM

29 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 450 KA2√s t = 0.1 to 10ms, no voltage reapplied

Parameter ST103S Units Conditions

On-state Conduction

KA2s

ST103S 30

ST103S Series

D-446

Fig. 3 - On-state Power Loss Characteristics

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

Fig. 4 - On-state Power Loss Characteristics

ST103S Series

D-447

Fig. 7 - On-state Voltage Drop Characteristics

Fig. 8 - Thermal Impedance Z

thJC

Characteristic

Fig. 10 - Reverse Recovery Current Characteristics

Fig. 9 - Reverse Recovered Charge Characteristics

Fig. 5 - Maximum Non-repetitive Surge Current Fig. 6 - Maximum Non-repetitive Surge Current

ST103S Series

D-448

Fig. 13 - Frequency Characteristics

Fig. 12 - Frequency Characteristics

Fig. 11 - Frequency Characteristics

ST103S Series

D-449

Fig. 15 - Gate Characteristics

Fig. 14 - Maximum On-state Energy Power Loss Characteristics

ST103S Series

D-443

VTMMax. peak on-state voltage 1.73 ITM= 300A, TJ = TJ max, tp = 10ms sine wave pulse
V

T(TO)1

Low level value of threshold
voltage

V

T(TO)2

High level value of threshold
voltage

r

t

1

Low level value of forward
slope resistance

r

t

2

High level value of forward
slope resistance

I

H

Maximum holding current 600 TJ = 25°C, IT > 30A

I

L

Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

Parameter ST103S Units Conditions

On-state Conduction

1.32 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.35 (I > x π x I

T(AV)

), TJ = TJ max.

V

1.40 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.30 (I > x π x I

T(AV)

), TJ = TJ max.

mΩ

mA

di/dt Max. non-repetitive rate of rise T

J

= TJ max, V

DRM

= rated V

DRM

of turned-on current I

TM

= 2 x di/dt

T

J

= 25°C, V

DM

= rated V

DRM, ITM

= 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T

J

= TJ max, I

TM

= 100A, commutating di/dt = 10A/µs

V

R

= 50V, tp = 200µs, dv/dt: see table in device code

Switching

Parameter ST103S Units Conditions

1000 A/µs

t

d

Typical delay time 0.80

Min Max

dv/dt Maximum critical rate of rise of T

J

= TJ max., linear to 80% V

DRM

, higher value

off-state voltage available on request

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Parameter ST103S Units Conditions

Blocking

500 V/µs

30 mA T

J

= TJ max, rated V

DRM/VRRM

applied

PGMMaximum peak gate power 40
P

G(AV)

Maximum average gate power 5

I

GM

Max. peak positive gate current 5 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

I

GT

Max. DC gate current required
to trigger

V

GT

Max. DC gate voltage required
to trigger

I

GD

Max DC gate current not to trigger 20 mA

V

GD

Max. DC gate voltage not to trigger 0.25 V

Triggering

Parameter ST103S Units Conditions

20

5

V TJ = TJ max, tp ≤ 5ms

200 mA

3 V

T

J

= 25°C, VA = 12V, Ra = 6Ω

TJ = TJ max, rated V

DRM

applied

t

q

Max. turn-off time 10 25

µs

W TJ = TJ max, f = 50Hz, d% = 50

ST103S Series

D-444

Ordering Information Table

5

6

8

9

ST 10 3 S 08 P F N 0

3

4

10

7

Device Code

1 2

1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - S = Compression bonding Stud
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Ratings table)

6 - P = Stud Base 1/2" 20UNF
7 - Reapplied dv/dt code (for t

q

test condition)

8 - t

q

code

9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads)

1 = Fast-on terminals (Gate and Aux. Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)

- Critical dv/dt:
None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)

dv/dt - t

q

combinations available

dv/dt (V/µs) 20 50 100 200 400

10 CN DN EN FN * -­12 CM DM EM FM HM
15 CL DL EL FL * HL
18 CP DP EP FP HP
20 CK DK EK FK HK
25 -- -- -- -- HJ

tq(µs)

T

J

Max. junction operating temperature range -40 to 125

T

stg

Max. storage temperature range -40 to 150

R

thJC

Max. thermal resistance, junction to case 0.195 DC operation

R

thCS

Max. thermal resistance, case to heatsink 0.08 Mounting surface, smooth, flat and greased

T Mounting torque, ± 10% 15.5 Nm

(137) (Ibf-in)

14 Nm

(120) (Ibf-in)

wt Approximate weight 130 g

Case style TO-209AC (TO-94) See Outline Table

Parameter ST103S Units Conditions

Thermal and Mechanical Specifications

°C

K/W

Non lubricated threads

Lubricated threads

180° 0.034 0.025
120° 0.040 0.042

90° 0.052 0.056 K/W T

J

= TJ max.
60° 0.076 0.079
30° 0.126 0.127

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

∆R

thJC

Conduction

(The following table shows the increment of thermal resistence R

thJC

when devices operate at different conduction angles than DC)

*Standard part number.

All other types available only on request.

10

ST103S Series

D-445

Outline Table

Case Style TO-209AC (TO-94)

All dimensions in millimeters (inches)

Fast-on Terminals

C.S. 0.4 mm

2

10 (0.39)

RED SHRINK

RED CATHODE

RED SILICON RUBBER

4.3 (0.17) DIA

21 ( 0.83 )

12.5 ( 0.49) MAX.

157 (6.1 8)

170 (6.69 )

(.0006 s.i.)

8.5 (0.33) DIA.

16.5 (0.65) MAX.

MAX.

70 (2.75) MIN .

CERAMIC HOUSING

22.5 (0.88) MAX. DIA.

29 (1.14) M AX.

SW 27

C.S. 16mm

2

FLEXIBLE LEAD

(.025 s.i.)

2.6 (0.10) MAX.

WHITE SHRINK

2

0

(

0

.

7

9

)

M

I

N

.

29.5 (1.16)

MAX.

1/2"-20UNF-2A

9

.

5

(

0

.

3

7

)

M

I

N

.

WHITE GATE

215 (8.46)

Case Style TO-208AD (TO-83)

All dimensions in millimeters (inches)

10

1/2"-20UNF-2A

29.5 (1.16)

M A X.

MA X .

46 ( 1 .81)

1 0

7.5

(0.30)

22.5 DIA.

16.5

(0.6 5)

1 2 .5 (0.49)

5.2 (0.20) DIA.

29 (1 .14)

(0.3 9 )

(0.89) MAX.

21(0.83 )

1.5 (0.06) DIA.

(0.3 9 )

49 ( 1 .93)

M A X .

CERAMIC HOUSING

FLAG TERMINALS

S W 27

2.4 (0.09)

AMP. 280000-1

REF-250