Datasheet ST083S12PFK2, ST083S12PFK1L, ST083S12PFK1, ST083S12PFK0, ST083S10PFK2L Datasheet (International Rectifier)

Features

All diffused design
Center amplifying gate
Guaranteed high dv/dt
Guaranteed high di/dt
High surge current capability
Low thermal impedance
High speed performance

Typical Applications

Inverters
Choppers
Induction heating
All types of force-commutated converters

I

T(AV)

85 A

@ T

C

85 °C

I

T(RMS)

135 A

I

TSM

@ 50Hz 2450 A
@ 60Hz 2560 A

I2t@

50Hz 30 KA2s

@ 60Hz 27 KA2s

V

DRM/VRRM

400 to 1200 V

t

q

range (*) 10 to 30 µs

T

J

- 40 to 125 °C

Parameters ST083S Units

Major Ratings and Characteristics

(*) tq = 10 to 20µs for 400 to 800V devices

t

q

= 15 to 30µs for 1000 to 1200V devices

case style

TO-209AC (TO-94)

ST083S SERIES

INVERTER GRADE THYRISTORS

Stud V ersion

85A

Bulletin I25185/B

ST083S Series

Voltage V

DRM/VRRM

, maximum V

RSM

, maximum I

DRM/IRRM

max.

Type number Code repetitive peak voltage non-repetitive peak voltage @ T

J

= TJ max.

VVmA

04 400 500
08 800 900
10 1000 1100
12 1200 1300

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Frequency Units

50Hz 210 120 330 270 2540 1930
400Hz 200 120 350 210 1190 810

1000Hz 150 80 320 190 630 400 A
2500Hz 70 25 220 85 250 100
Recovery voltage Vr 50 50 50 50 50 50

Voltage before turn-on Vd V

DRM

V

DRM

V

DRM

Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 60 85 60 85 60 85 °C

Equivalent values for RC circuit 22Ω / 0.15µF 22Ω / 0.15µF 22Ω / 0.15µF

I

TM

180oel

180

o

el

100µs

I

TM

I

TM

Current Carrying Capability

V

I

T(AV)

Max. average on-state current 85 A 180° conduction, half sine wave
@ Case temperature 85 °C

I

T(RMS)

Max. RMS on-state current 135 DC @ 77°C case temperature

I

TSM

Max. peak, one half cycle, 2450 t = 10ms No voltage
non-repetitive surge current 2560 A t = 8.3ms reapplied

2060 t = 10m s 100% V

RRM

2160 t = 8.3ms reapplied Sinusoidal half wave,

I

2

t Maximum I2t for fusing 30 t = 10ms No voltage Initial TJ = TJ max

27 t = 8.3ms reapplied
21 t = 10ms 100% V

RRM

19 t = 8.3ms reapplied

I

2

√t Maximum I2√t for fusing 300 KA2√s t = 0.1 to 10ms, no voltage reapplied

Parameter ST083S Units Conditions

On-state Conduction

KA2s

ST083S 30

ST083S Series

V

TM

Max. peak on-state voltage 2.15 ITM= 300A, TJ = TJ max, tp = 10ms sine wave pulse

V

T(TO)1

Low level value of threshold
voltage

V

T(TO)2

High level value of threshold
voltage

r

t

1

Low level value of forward
slope resistance

r

t

2

High level value of forward
slope resistance

I

H

Maximum holding current 600 TJ = 25°C, IT > 30A

I

L

Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A

Parameter ST083S Units Conditions

On-state Conduction

1.46 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

1.52 (I > π x I

T(AV)

), TJ = TJ max.

V

2.32 (16.7% x π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ max.

2.34 (I > π x I

T(AV)

), TJ = TJ max.

mΩ

mA

di/dt Max. non-repetitive rate of rise T

J

= TJ max, V

DRM

= rated V

DRM

of turned-on current I

TM

= 2 x di/dt

T

J

= 25°C, V

DM

= rated V

DRM, ITM

= 50A DC, tp= 1µs
Resistive load, Gate pulse: 10V, 5Ω source
T

J

= TJ max, I

TM

= 100A, commutating di/dt = 10A/µs

V

R

= 50V, tp = 200µs, dv/dt: see table in device code

Switching

Parameter ST083S Units Conditions

1000 A/µs

t

d

Typical delay time 0.80

µs

dv/dt Maximum critical rate of rise of T

J

= TJ max., linear to 80% V

DRM

, higher value

off-state voltage available on request

I

RRM

Max. peak reverse and off-state

I

DRM

leakage current

Parameter ST083S Units Conditions

Blocking

500 V/µs

30 mA TJ = TJ max, rated V

DRM/VRRM

applied

P

GM

Maximum peak gate power 40

P

G(AV)

Maximum average gate power 5

I

GM

Max. peak positive gate current 5 A TJ = TJ max, tp ≤ 5ms

+V

GM

Maximum peak positive
gate voltage

-V

GM

Maximum peak negative
gate voltage

I

GT

Max. DC gate current required
to trigger

V

GT

Max. DC gate voltage required
to trigger

I

GD

Max. DC gate current not to trigger 20 mA

V

GD

Max. DC gate voltage not to trigger 0.25 V

Triggering

Parameter ST083S Units Conditions

20

5

VTJ = TJ max, tp ≤ 5ms

200 mA

3V

T

J

= 25°C, VA = 12V, Ra = 6Ω

TJ = TJ max, rated V

DRM

applied

(*) t

q

= 10 to 20µs for 400 to 800V devices; tq = 15 to 30µs for 1000 to 1200V devices.

Min M a x

WT

J

= TJ max, f = 50Hz, d% = 50

t

q

Max. turn-off time (*) 10 3 0

ST083S Series

1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - S = Compression bonding Stud
5 - Voltage code: Code x 100 = V

RRM

(See Voltage Ratings Table)

6 - P = Stud Base 1/2" 20UNF
7 - Reapplied dv/dt code (for tq Test Condition)
8 -tq code
9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads)

1 = Fast-on terminals (Gate and Aux. Cathode Leads)
2 = Flag terminals (For Cathode and Gate Terminals)

- Critical dv/dt:
None = 500V/µsec (Standard value)
L = 1000V/µsec (Special selection)

dv/dt - tq combinations available

dv/dt (V/µs) 20 50 100 200 400

t

q

(µs) 10 CN DN EN FN * HN

12 CM DM EM FM * HM
15 CL DL EL FL HL
18 CP DP EP FP * HP
20 CK DK EK FK * HK

t

q

(µs) 15 CL -- -- -- --

18 CP DP EP FP * --
20 CK DK EK FK * HK
25 CJ DJ EJ FJ HJ
30 -- DH EH FH HH

T

J

Max. junction operating temperature range -40 to 125

T

stg

Max. storage temperature range -40 to 150

R

thJC

Max. thermal resistance, junction to case 0.195 DC operation

R

thCS

Max. thermal resistance, case to heatsink 0.08 Mounting surface, smooth, flat and greased

T Mounting torque, ± 10% 15.5 Nm

(137) (Ibf-in)

14 Nm

(120) (Ibf-in)

wt Approximate weight 130 g

Case style TO-209AC (TO-94) See Outline Table

Parameter ST083S Units Conditions

Thermal and Mechanical Specifications

°C

K/W

Non lubricated threads

Lubricated threads

Ordering Information Table

5

6

8 9

ST 08 3 S 12 P F K 0

34

10

7

Device Code

12

∆R

thJC

Conduction

(The following table shows the increment of thermal resistence R

thJC

when devices operate at different conduction angles than DC)

180° 0.034 0.025
120° 0.041 0.042

90° 0.052 0.056 K/ W T

J

= TJ max.
60° 0.076 0.079
30° 0.126 0.127

Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions

*Standard part number.

All other types available only on request.

only for
1000/1200V

up to 800V

10

ST083S Series

Outline Table

Case Style TO-209AC (TO-94)

All dimensions in millimeters (inches)

Fast-on Terminals

C.S. 0.4 mm

2

10 (0.39)

RED SHRINK

RED CATHODE

RED SILICON RUBBER

4.3 (0.17) DIA

21 (0.83)

12.5 (0.49) MAX.

157 (6.18)

170 (6.69)

(.0006 s.i.)

8.5 (0.33) DIA.

16.5 (0.65) MAX.

MAX.

70 (2.75) MIN.

CERAMIC HOUSING

22.5 (0.88) MAX. DIA.

29 (1.14) MA X.

SW 27

C.S. 16mm

2

FLEXIBLE LEAD

(.025 s.i.)

2.6 (0.10) MAX.

WHITE SHRINK

2

0

(

0

.

7

9

)

M

I

N

.

29.5 (1.16)
MAX.

1/2"-20UNF-2A

9

.

5

(

0

.

3

7

)

M

I

N

.

WHITE GATE

215 (8.46)

Case Style TO-208AD (TO-83)

All dimensions in millimeters (inches)

10

1/2"-20UNF-2A

29.5 (1.16)

MAX.

MAX.

46 (1.81)

10

7.5

(0.30)

22.5 DIA.

16.5

(0.65)

12.5 (0.49)

5.2 (0.20) DIA.

29 (1.14)

(0.3 9)

(0.89) MAX.

21(0.83)

1.5 (0.06) DIA.

(0.39)

49 (1.93)

MAX.

CERAMIC HOUSING

FLAG TERMINALS

SW 27

2.4 (0.09)

AMP. 280000-1

REF-250

ST083S Series

70

80

90

100

110

120

130

0 20 40 60 80 100 120 140

DC

30°

60°

90°

120°

180°

Average On- state Curr ent (A)

Max imu m Allowable Case Temperature (°C )

Conduction Peri od

ST08 3S Se ri e s
R (DC) = 0.19 5 K/W

thJC

Fig. 2 - Current Ratings CharacteristicsFig. 1 - Current Ratings Characteristics

Fig. 3 - On-state Power Loss Characteristics

Fig. 4 - On-state Power Loss Characteristics

80

90

100

110

120

130

0 102030405060708090

Maxi mum Allowable Case Temperature (° C)

30°

60°

90°

120°

180°

Aver age On-state Current (A)

Conduction Angle

ST083S Series
R (DC) = 0.195 K/ W

thJC

25 50 75 100 125

M aximu m Al lowable A m bient Temperature ( °C)

R

=

0

.

1

K

/

W

-

D

e

l

t

a

R

t

h

S

A

0

.

2

K

/

W

0

.

3

K

/

W

0

.

4

K

/

W

0

.

5

K

/

W

0

.

8

K

/

W

1

.

2

K

/

W

0

50

100

150

200

250

0 20 40 60 80 100 120 140

DC
180°
120°

90°

60°

30°

RMS Lim it

Conduction P er i od

Max imum A ve rage On -state Power Loss (W)

Average On-state Cur rent (A)

ST083S Series
T = 125°C

J

25 50 75 100 125

Maxi mu m Allowable Ambient Temperature (° C)

R

=

0

.

1

K

/

W

-

D

e

l

t

a

R

t

h

S

A

0

.

2

K

/

W

0

.

3

K/

W

0

.

4

K

/

W

0

.

5

K

/

W

0

.

8

K

/

W

1

.

2

K

/

W

0

20

40

60

80

100

120

140

160

180

0

10 20 30 40 50 60 70 80 90

180°
120°

90°

60°

30°

RMS Limit

Conduction Angle

M ax i m u m A v erage On-s tat e Power Loss (W)

Average On-state Current (A)

ST083S Series
T = 12 5°C

J

ST083S Series

Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics

Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - Thermal Impedance Z

thJC

Characteristic

Fig. 5 - Maximum Non-repetitive Surge Current

Fig. 6 - Maximum Non-repetitive Surge Current

1000

1200

1400

1600

1800

2000

2200

1 10 100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Peak Half Sine W ave On-state Cur r ent (A)

Initial T = 125°C

@ 60 H z 0.0083 s
@ 50 H z 0.0100 s

J

ST 083S Series

At Any Rated Load Con dition And Wi th

Rated V Applied Follo w ing Surge.

RRM

1000

1200

1400

1600

1800

2000

2200

2400

2600

0.01 0.1 1
P u lse T r ain Du ration (s )

Versus P ulse Train Du ration. Control

Of C o ndu cti o n May No t Be Main tained.

Peak Half Sine W ave On-state Cur r ent (A)

Ini tial T = 125 °C

N o V oltage Reappl i e d
Rated V Reapplied

RRM

J

S T083S Se r ie s

Max imum Non Repetitive Sur ge C u r r en t

100

1000

10000

11.522.533.544.555.566.5

T = 25°C

J

I ns tan tane ous On-state Current (A)

Instantaneous On-state Voltage (V)

T = 125°C

J

ST 083S Se rie s

0. 01

0. 1

1

0. 001 0. 01 0.1 1 10
Square Wave Pulse Duration (s)

thJC

Transient Thermal I mpedance Z (K/W)

ST0 83S Series

Steady State Valu e
R = 0 .195 K/W
(DC Operation)

thJC

10

20

30

40

50

60

70

80

90

100

110

120

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Recovery Current - I rr (A )

Rate Of Fall Of Forward Current - di/dt (A/µs)

ST 083S Series
T = 125 °C

I = 500 A

300 A
200 A

J

100 A

50 A

TM

20

40

60

80

100

120

140

160

10 20 30 40 50 60 70 80 90 100

ST083S Se rie s
T = 125 °C

I = 500 A

300 A

200 A

J

100 A

50 A

Rate Of Fall Of On -state Cu rren t - di/dt (A /µs)

M axi m um Rev erse Recov ery Ch arge - Q rr (µ C)

TM

ST083S Series

Fig. 13 - Frequency Characteristics

Fig. 11 - Frequency Characteristics

Fig. 12 - Frequency Characteristics

1E 1

1E 2

1E 3

1E 4

1E11E21E31E4

50 Hz

400

2500

100

Pulse Basewidth (µs )

P eak On-state Cur rent (A)

1000

1500

2000

3000

200

500

Snubber circuit
R = 2 2 ohms
C = 0.15 µF
V = 80% V

s
s
D

DRM

ST0 83S Se rie s
Sin u soidal pulse
T = 60°C

C

1E 4

tp

1E1 1E2 1E3 1E4

50 H z

400

2500

100

Pulse Ba se wid th (µs)

1000

1500

2000

3000

200

500

Snubb er circuit
R = 22 ohms
C = 0.15 µF
V = 80% V

s
s

D

DRM

ST083S Se ri es
Sin usoidal pul se
T = 85 °C

C

tp

1E 1

1E 1

1E 2

1E 3

1E 4

1E 1 1E2 1E 3 1E 4

50 Hz

400

2500

100

1000

1500

2000

3000

200

500

Snubber cir cuit
R = 22 ohms
C = 0.15 µF
V = 80% V

s
s
D

DRM

ST083S Series
Trape zoidal pu lse
T = 60 °C

di/dt = 50A/µs

C

Pulse Ba se wid t h (µs)

Peak On-state Current (A)

tp

1E4

1E1 1E2 1E3 1E4

50 Hz

400

2500

100

Pulse Basew id th ( µs)

1000

1500

2000

200

500

Snubber circuit
R = 22 ohms
C = 0.15 µF
V = 80% V

s
s
D

DRM

ST08 3S S eries
Trape zoidal pu lse
T = 8 5°C

di /dt = 50A/µs

C

tp

1E1

1E 1

1E 2

1E 3

1E 4

1E 1 1E2 1E3 1E 4

400

2500

100

1000

1500

2000

3000

200

500

Snubber circuit
R = 2 2 ohms

C = 0.15 µF
V = 80% V

s
s

D

DRM

ST0 83 S Se rie s
Trape zoi dal pulse
T = 60°C

di/dt = 100A/µs

C

Pulse Ba se width (µs)

P eak On-state Current (A)

tp

1E4

50 Hz

1E1 1E2 1E3 1E4

50 Hz

400

2500

100

Pulse Ba sewidth (µs)

1000

1500

2000

200

500

Snubber circuit
R = 22 ohms
C = 0.15 µF
V = 80% V

s
s
D

DRM

ST083S Se ri e s
Trapezoidal pulse
T = 85°C

di/dt = 100A/µs

C

tp

1E1

ST083S Series

Fig. 14 - Maximum On-state Energy Power Loss Characteristics

Fig. 15 - Gate Characteristics

0.1

1

10

100

0.001 0.01 0.1 1 10 100

VGD

IGD

(b)

(a)

Tj=25 ° C

Tj=125 °C

Tj=-40 °C

(1)

(2)

I nstantaneous Gate Current (A)

Instantaneous Gate Voltage (V)

Rectangular gate pulse
a) Recommended load line for

b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms

rated di/dt : 20V, 10ohms; tr<=1 µs

tr<=1 µs

(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms

(3)

Device: ST083S Series

(4)

Frequency Limited by PG(AV)

1E 1

1E 2

1E 3

1E 4

1E 1 1E 2 1E 3 1E 4

Pulse Basewidth (µ s)

20 joules per pulse

2

1

0.5

0.3

0.2

0.1

ST083S Series
Sinusoidal pulse

10

5

Peak On-state Curr ent (A)

3

tp

1E 4 1E1 1E 2 1E 3 1E 4

Pulse Basew idth (µs)

ST083S Se ri es
Rectangular pulse

di/dt = 50A/µs

20 joules per pulse

7.5

4

2

1

0.5

0.3

0.2

0.1

tp

1E1