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查询ST083S04PFK0供应商
Bulletin I25185 rev. C 03/03
ST083S SERIES
INVERTER GRADE THYRISTORS
Features
Center amplifying gate
High surge current capability
Low thermal impedance
High speed performance
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
Major Ratings and Characteristics
Parameters ST083S Units
I
T(AV)
I
T(RMS)
I
TSM
@ T
C
@ 50Hz 2450 A
@ 60Hz 2560 A
85 A
85 °C
135 A
Stud Version
85A
I2t@
V
DRM/VRRM
t
range (see table) 10 to 20 µs
q
T
J
50Hz 30 KA2s
@ 60Hz 27 KA2s
400 to 1200 V
- 40 to 125 °C
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case style
TO-209AC (TO-94)
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ST083S Series
Bulletin I25185 rev. C 03/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage V
DRM/VRRM
Type number Code repetitive peak voltage non-repetitive peak voltage @ T
04 400 500
ST083S 30
08 800 900
10 1000 1100
12 1200 1300
Current Carrying Capability
, maximum V
, maximum I
RSM
DRM/IRRM
VVmA
max.
= TJ max.
J
I
Frequency Units
180
TM
o
el
180oel
I
TM
I
TM
100µs
50Hz 210 120 330 270 2540 1930
400Hz 200 120 350 210 1190 810
1000Hz 150 80 320 190 630 400 A
2500Hz 70 25 220 85 250 100
Recovery voltage Vr 50 50 50 50 50 50
Voltage before turn-on Vd V
DRM
V
DRM
V
DRM
Rise of on-state current di/dt 50 50 - - - - A/µs
Case temperature 60 85 60 85 60 85 °C
Equivalent values for RC circuit 22Ω / 0.15µF 2 2Ω / 0.15µF 22Ω / 0.15µF
On-state Conduction
Parameter ST083S Units Conditions
I
Max. average on-state current 85 A 180° conduction, half sine wave
T(AV)
@ Case temperature 85 °C
Max. RMS on-state current 13 5 DC @ 77°C case temperature
I
T(RMS)
Max. peak, one half cycle, 2450 t = 10ms No voltage
I
TSM
non-repetitive surge current 2560 A t = 8.3ms reapplied
2060 t = 10ms 100% V
2160 t = 8.3ms reapplied Sinusoidal half wave,
2
I
t Maximum I2t for fusing 30 t = 10ms No voltage Initial TJ = TJ max
27 t = 8.3ms reapplied
21 t = 10ms 100% V
KA2s
19 t = 8.3ms reapplied
2
I
√t Maximum I2√t for fusing 300 KA2√s t = 0.1 to 10ms, no voltage reapplied
RRM
RRM
V
2
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Page 3
ST083S Series
Bulletin I25185 rev. C 03/03
On-state Conduction
Parameter ST083S Units Conditions
VTMMax. peak on-state voltage 2.15 ITM= 300A, TJ = TJ max, tp = 10ms sine wave pulse
Low level value of threshold
V
T(TO)1
voltage
High level value of threshold
V
T(TO)2
voltage
r
Low level value of forward
1
t
slope resistance
High level value of forward
r
2
t
slope resistance
I
Maximum holding current 600 TJ = 25°C, IT > 30A
H
Typical latching current 1000 TJ = 25°C, VA= 12V, Ra = 6Ω, IG= 1A
I
L
Switching
Parameter ST083S Units Conditions
di/dt Max. non-repetitive rate of rise T
of turned-on current I
t
Typical delay time 0.80
d
t
Max. turn-off time 10 20
q
1.46 (16.7% x π x I
V
1.52 (I > π x I
2.32 (16.7% x π x I
mΩ
2.34 (I > π x I
mA
= TJ max, V
1000 A/µs
Min Max
J
= 2 x di/dt
TM
T
= 25°C, V
J
Resistive load, Gate pulse: 10V, 5Ω source
µs
T
= TJ max, I
J
V
= 50V, tp = 200µs, dv/dt = 200V/µs
R
< I < π x I
T(AV)
), TJ = TJ max.
T(AV)
T(AV)
), TJ = TJ max.
T(AV)
DRM
= rated V
DM
= 100A, commutating di/dt = 10A/µs
TM
< I < π x I
= rated V
DRM, ITM
T(AV)
T(AV)
DRM
), TJ = TJ max.
), TJ = TJ max.
= 50A DC, tp= 1µs
Blocking
Parameter ST083S Units Conditions
dv/dt Maximum critical rate of rise of T
off-state voltage available on request
I
Max. peak reverse and off-state
RRM
leakage current
I
DRM
500 V/µs
30 mA T
Triggering
Parameter ST083S Units Conditions
PGMMaximum peak gate power 40
P
Maximum average gate power 5
G(AV)
I
Max. peak positive gate current 5 A TJ = TJ max, tp ≤ 5ms
GM
+V
Maximum peak positive
GM
gate voltage
Maximum peak negative
-V
GM
gate voltage
I
Max. DC gate current required
GT
to trigger
V
Max. DC gate voltage required
GT
to trigger
I
Max. DC gate current not to trigger 20 mA
GD
V
Max. DC gate voltage not to trigger 0.25 V
GD
20
5
200 mA
3V
WT
VTJ = TJ max, tp ≤ 5ms
T
TJ = TJ max, rated V
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= TJ max., linear to 80% V
J
= TJ max, rated V
J
= TJ max, f = 50Hz, d% = 50
J
= 25°C, VA = 12V, Ra = 6Ω
J
DRM/VRRM
applied
DRM
, higher value
DRM
applied
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ST083S Series
Bulletin I25185 rev. C 03/03
Thermal and Mechanical Specifications
Parameter ST083S Units Conditions
TJMax. junction operating temperature range -40 to 125
Max. storage temperature range -40 to 150
T
stg
R
Max. thermal resistance, junction to case 0.195 DC operation
thJC
R
Max. thermal resistance, case to heatsink 0.08 Mounting surface, smooth, flat and greased
thCS
T Mounting torque, ± 10% 15.5 Nm
(137) (Ibf-in)
14 Nm
(120) (Ibf-in)
wt Approximate weight 130 g
Case style TO-209AC (TO-94) See Outline Table
∆R
Conduction
thJC
(The following table shows the increment of thermal resistence R
thJC
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.034 0.025
120° 0.041 0.042
90° 0.052 0.056 K/W T
60° 0.076 0.079
30° 0.126 0.127
°C
K/W
Non lubricated threads
Lubricated threads
when devices operate at different conduction angles than DC)
= TJ max.
J
Ordering Information Table
Device Code
ST 08 3 S 12 P F N 0
1
2
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - S = Compression bonding Stud
5 - Voltage code: Code x 100 = V
(See Voltage Ratings Table)
RRM
6 - P = Stud Base 1/2"-20UNF-2A threads
7 - Reapplied dv/dt code (for tq Test Condition)
8 -tq code
9 - 0 = Eyelet terminals (Gate and Aux. Cathode Leads)
1 = Fast-on terminals (Gate and Aux. Cathode Leads)
4
3
4
5
7
6
8 9
dv/dt - tq combinations available
dv/dt (V/µs) 200
tq(µs) 10 FN
up to 800V 20 FK
tq(µs)
only for 20 FK
1000/1200V
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Page 5
Outline Table
CERAMIC HOUSING
170 (6.69)
157 (6.18)
70 (2.75) MIN.
29 (1.14) MAX.
8.5 (0.33) DIA.
RED SILICON RUBBER
RED CATHODE
RED SHRINK
12.5 (0.49) MAX.
MAX.
21 (0.83)
16.5 (0.65) MAX.
1/2"-20UNF-2A
29.5 (1.16)
MAX.
4.3 (0.17) DIA
C.S. 0.4 mm
(.0006 s.i.)
WHITE GATE
215 (8.46)
WHITE SHRINK
22.5 (0.88) MAX. DIA.
SW 27
FLEXIBLE LEAD
C.S. 16mm
(.025 s.i.)
2
10 (0.39)
ST083S Series
Bulletin I25185 rev. C 03/03
2.6 (0.10) MAX.
2
Case Style TO-209AC (TO-94)
All dimensions in millimeters (inches)
.
N
I
M
)
7
3
.
0
(
.
5
N
.
I
9
M
)
9
7
.
0
(
0
2
Fast-on Terminals
AMP. 280000-1
REF-250
130
ST083S Series
R (DC) = 0.195 K/W
thJC
120
110
Conduction Angle
100
90
80
Maxi mu m Allowabl e Case Temperature (°C)
0 102030405060708090
30°
60°
Av erage On- state C urr e n t ( A)
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90°
120°
180°
130
120
ST 083S Series
R (DC) = 0.19 5 K/W
thJC
110
Conduction Perio d
100
90
30°
60°
80
70
Maximum All o wable Case Temperature (° C)
0 20 40 60 80 100 120 140
90°
120°
180°
Average On -state Current (A )
Fig. 2 - Current Ratings CharacteristicsFig. 1 - Current Ratings Characteristics
DC
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Page 6
ST083S Series
Bulletin I25185 rev. C 03/03
180
160
140
120
100
80
60
40
20
Maximum Average On-state P ower Loss (W)
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
ST083S Series
T = 125°C
J
0
0
10 20 30 40 50 60 70 80 90
Av erage On-s tate C urr e n t (A)
0.3
0
.
4
K
/
W
0
.
5
K
/
W
0
.
8
K
/
W
1
.
2
K
/
W
25 50 75 100 125
Maxim um Allowa ble Am bient Temperature (° C )
R
0
.
2
t
h
K
S
A
/
W
K/
W
=
0
.
1
K
/
W
D
e
l
t
a
R
Fig. 3 - On-state Power Loss Characteristics
250
200
150
100
50
180°
120°
RMS Limit
DC
90°
60°
30°
Conduction P eriod
ST083S Series
T = 125°C
J
R
t
h
S
A
=
0
.
2
0
.
K
1
/
W
K
/
0
.
3
K
/
W
0
.
4
K
/
W
0
.
5
K
/
W
0
.
8
K
/
W
1
.
2
K
/
W
W
-
D
e
l
t
a
R
0
Maximum Average On-state Power Loss (W)
0 20406080100120140
Average On -s tate Current (A )
Fig. 4 - On-state Power Loss Characteristics
2200
At Any Rate d Load C o n diti o n And With
Rated V Applied Following Surge.
2000
1800
RRM
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
1600
1400
1200
ST083S S eries
Peak Half Sine Wave O n -state Curren t ( A)
1000
1 10 100
Number Of Equal Amplitude Hal f Cycle Curr ent Pul ses (N)
Fig. 5 - Maximum Non-repetitive Surge Current
6
25 50 75 100 125
Max imum Al lowabl e A mbient Temperature (°C)
2600
Max imum N o n Repetitive Su rge Cur rent
2400
2200
2000
Versus Pulse Train Duration. Control
Of Conduction May Not B e Maintained.
Initial T = 125°C
N o Voltage Re applied
Rated V R eapplied
1800
1600
1400
ST083S Series
1200
Pea k Ha lf S ine Wav e O n -state Cu rrent (A)
1000
0.01 0.1 1
Pulse Train Duratio n (s)
Fig. 6 - Maximum Non-repetitive Surge Current
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J
RRM
Page 7
ST083S Series
Bulletin I25185 rev. C 03/03
10000
T = 25°C
J
1000
T = 125°C
J
ST083S Series
I ns t an tan e o us On- state C urrent (A )
100
11.522.533.544.555.566.5
I n stantane o u s On-state Voltage ( V)
Fig. 7 - On-state Voltage Drop Characteristics
160
140
ST083S Se rie s
T = 125 °C
J
I = 500 A
TM
120
100
200 A
80
100 A
60
40
20
10 20 30 40 50 60 70 80 90 100
Maxi mu m Rever se Recovery Charge - Qr r (µC)
Rate Of Fall Of On- state Current - di/dt (A/µs )
Fig. 9 - Reverse Recovered Charge Characteristics
300 A
50 A
1
St e a d y St a t e Va l u e
R = 0.195 K/W
thJC
thJC
(DC Operation)
0.1
ST083S Series
0.01
Transient Thermal Impedance Z (K/W )
0.001 0.01 0.1 1 10
Sq u a r e Wa v e Pulse D ura t io n ( s)
Fig. 8 - Thermal Impedance Z
120
110
Characteristic
thJC
I = 500 A
TM
100
90
80
70
60
50
40
30
20
10
Maxi m u m Rever se Recovery C u rrent - Irr (A)
10 20 30 40 50 60 70 80 90 100
ST083S Series
T = 125 °C
J
Rate Of Fall Of Forward Curr ent - di/dt (A/µs )
Fig. 10 - Reverse Recovery Current Characteristics
300 A
200 A
100 A
50 A
1E4
Snubber circuit
R = 22 ohms
s
C = 0. 15 µF
s
V = 80% V
D
1E3
500
tp
400
ST083S Se r ie s
Sinusoidal pulse
T = 60°C
C
1000
1500
2000
2500
1E2
3000
P eak On-state Current (A)
1E1
1E 1 1E 2 1E3 1E 4
100
200
Pulse Ba sew id t h (µs)
Fig. 11 - Frequency Characteristics
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Snub b e r c irc u i t
R = 22 ohm s
C = 0 .15 µ F
400
tp
V = 80% V
200
ST08 3S Se rie s
Sinusoidal pulse
T = 85°C
C
DRM
50 Hz
2000
2500
3000
1E 1
1E1 1E2 1E3 1E4
1E 4
1500
1000
500
Pulse Basewidth (µ s)
s
s
D
DRM
50 Hz
100
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ST083S Series
Bulletin I25185 rev. C 03/03
1E 4
Sn u b b e r c irc u it
R = 22 o h m s
s
C = 0.15 µF
s
V = 80% V
D
1E 3
100
200
400
500
1000
1500
3000
2500
2000
ST083S Serie s
Tr apez o idal pulse
T = 60°C
C
tp
di/dt = 50A/µs
1E 2
Peak On -sta t e Curre n t (A)
1E 1
1E1 1E2 1E3 1 E4
Pulse Ba sewid th (µs)
Fig. 12 - Frequency Characteristics
1E4
Snubber circuit
R = 22 o h m s
s
C = 0.15 µF
s
V = 80% V
D
1E3
100
200
400
500
1000
1500
3000
2500
2000
ST0 8 3 S Se r i e s
Trapezoidal pulse
T = 60°C
tp
di/dt = 100A/ µs
C
1E2
Peak On-state Curre nt (A)
1E1
1E 1 1E2 1E3 1E4
Pulse Ba sew id t h (µs)
Fig. 13 - Frequency Characteristics
ST08 3 S Se r ie s
Trapezoidal pulse
T = 85°C
C
tp
2500
di /dt = 50A/µs
2000
1500
1000
500
400
200
DRM
50 Hz
1E1
1E1 1E2 1E3 1E4
1E 4
Pulse Basewidth (µs)
ST0 8 3S Se ri e s
Trapezoidal pulse
T = 8 5 ° C
C
tp
DRM
50 Hz
1E 4
1E1 1E 2 1E 3 1E4
1E 1
di/dt = 100A/µs
2000
2500
1500
1000
500
400
200
Pulse Ba se w id t h (µs)
Snubber circuit
R = 22 ohms
s
C = 0.15 µF
s
V = 80% V
D
DRM
50 Hz
100
Snubber circuit
R = 22 ohms
s
C = 0.15 µF
s
V = 80% V
D
DRM
50 Hz
100
1E 4
2 0 joules per pu ls e
10
5
3
2
1E 3
0.2
0.1
1
0.5
0.3
1E 2
Peak On-state Cur rent (A)
1E 1
1E 1 1E 2 1E3 1E4
tp
ST083S S eries
Sinus oidal pulse
Pulse Basewidth (µs)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
8
ST083S Se rie s
R ectangula r puls e
di/dt = 50A /µs
tp
0.5
0.3
0.2
0.1
1E 1
1E 4
1E11E21E31E4
4
2
1
20 joule s per p ulse
7.5
Pulse Basewidth (µs)
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Page 9
Bulletin I25185 rev. C 03/03
100
Rectangular gate pu lse
a) Recomm e nded load l ine fo r
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Reco m m ended l o ad lin e for
<=30 % rated di/dt : 10 V, 1 0 ohms
10
tr<=1 µs
1
I nstantaneous Gate Voltage (V)
0.1
0.001 0.01 0.1 1 10 100
VGD
IGD
Devic e: S T083S Series
Instantaneous Gate Cur r ent (A)
(b)
Tj=- 40 °C
Tj= 25 °C
Tj=125 ° C
Fig. 15 - Gate Characteristics
(1) PGM = 10W, tp = 20ms
(2) PGM = 20W, tp = 10ms
(3) PGM = 40W, tp = 5ms
(4) PGM = 60W, tp = 3.3ms
(a)
Frequency Limited by PG( AV )
(1)
(2)
ST083S Series
(3)
(4)
This product has been designed and qualified for Industrial Level.
Data and specifications subject to change without notice.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 03 /03
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