Datasheet SST49LF002A, SST49LF003A, SST49LF004A, SST49LF008A Datasheet (SST)

Page 1
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
SST49LF002A / 003A / 004A / 008A2Mb / 3Mb / 4Mb / 8Mb Firmware Hub for Intel 8xx Chipsets
FEATURES:
Advance Information
• 2 Mbit, 3 Mbit, 4 Mbit, or 8 Mbit SuperFlash memory array for code/data storage
– SST49LF002A: 256K x8 (2 Mbit) – SST49LF003A: 384K x8 (3 Mbit) – SST49LF004A: 512K x8 (4 Mbit) – SST49LF008A: 1024K x8 (8 Mbit)
• Flexible Erase Capability
– Uniform 4 KByte Sectors – Uniform 16 KByte overlay blocks for
SST49LF002A
– Uniform 64 KByte overlay blocks for
SST49LF003A/004A/008A
– Top Boot Block protection
- 16 KByte for SST49LF002A
- 64 KByte for SST49LF003A/004A/008A
– Chip-Erase for PP Mode Only
• Single 3.0-3.6V Read and Write Operations
• Superior Reliability
– Endurance:100,000 Cycles (typical) – Greater than 100 years Data Retention
• Low Power Consumption
– Active Read Current: 6 mA (typical) – Standby Current: 10 µA (typical)
• Fast Sector-Erase/Byte-Program Operation
– Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 70 ms (typical) – Byte-Program Time: 14 µs (typical) – Chip Rewrite Time:
SST49LF002A: 4 seconds (typical) SST49LF003A: 6 seconds (typical) SST49LF004A: 8 seconds (typical)
SST49LF008A: 15 seconds (typical) – Single-pulse Program or Erase – Internal timing generation
• Two Operational Modes
– Firmware Hub Interface (FWH) Mode for
in-system operation
– Parallel Programming (PP) Mode for fast
production programming
• Firmware Hub Hardware Interface Mode
– 5-signal communication interface supporting
byte Read and Write – 33 MHz clock frequency operation – WP# and TBL# pins provide hardware write
protect for entire chip and/or top Boot Block – Block Locking Register for all blocks – Standard SDP Command Set – Data# Polling and Toggle Bit for End-of-Write
detection – 5 GPI pins for system design flexibility – 4 ID pins for multi-chip selection
• Parallel Programming (PP) Mode
– 11-pin multiplexed address and
8-pin data I/O interface – Supports fast In-System or PROM programming
for manufacturing
• CMOS and PCI I/O Compatibility
• Packages Available
– 32-lead PLCC – 32-lead TSOP (8mm x 14mm)
PRODUCT DESCRIPTION
The SST49LF00xA flash memory devices are designed to be read-compatible with the Intel 82802 Firmware Hub (FWH) device for PC-BIOS application. It provides pro­tection for the storage and update of code and data in addition to adding system design flexibility through five general purpose inputs. Two interface modes are sup­ported by the SST49LF00xA: Firmware Hub (FWH) Interface Mode for In-System programming and Parallel Programming (PP) Mode for fast factory programming of PC-BIOS applications.
©2002 Silicon Stor age Technology, Inc. S71161-06-000 2/02 504
1
The SST49LF00xA flash memory devices are manufac­tured with SST’s proprietary, high performance Super­Flash Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manu­facturability compared with alternate approaches. The SST49LF00xA devices significantly improve performance and reliability, while lowering power consumption. The SST49LF00xA devices write (Program or Erase) with a single 3.0-3.6V power supply. It uses less energy during Erase and Program than alternative flash memory tech­nologies. The total energy consumed is a function of the applied voltage, current and time of application. Since for
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
Intel is a registered trademark of Intel Corporation.
These specifications are subject to change without notice.
Page 2
Advance Information
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
any given voltage range, the SuperFlash technology uses less current to program and has a shorter Erase time, the total energy consumed during any Erase or Program oper­ation is less than alternative flash memory technologies. The SST49LF00xA products provide a maximum Byte­Program time of 20 µsec. The entire memory can be erased and programmed byte-by-byte typically in 15 sec­onds for an 8-Mbit device, when using status detection features such as Toggle Bit or Data# Polling to indicate the completion of Program operation. The SuperFlash tech­nology provides fixed Erase and Program time, indepen­dent of the number of Erase/Program cycles that have performed. Therefore the system software or hardware does not have to be calibrated or correlated to the cumu­lated number of Erase/Program cycles as is necessary with alternative flash memory technologies, whose Erase and Program time increase with accumulated Erase/Pro­gram cycles.
To protect against inadvertent write, the SST49LF00xA devices employ hardware and software data (SDP) protec­tion schemes. It is offered with typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years.
To meet high density, surface mount requirements, the SST49LF00xA device is offered in 32-lead TSOP and 32­lead PLCC packages. See Figures 7 and 8 for pin assign­ments and Table 8 for pin descriptions.
Mode Selection and Description
The SST49LF00xA flash memory devices can operate in two distinct interface modes: the Firmware Hub Interface (FWH) mode and the Parallel Programming (PP) mode. The IC (Interface Configuration pin) is used to set the interface mode selection. If the IC pin is set to logic High, the device is in PP mode; while if the IC pin is set Low, the device is in the FWH mode. The IC selection pin must be configured prior to device operation. The IC pin is internally pulled down if the pin is not connected. In FWH mode, the device is configured to interface with its host using Intel’s Firmware Hub proprietary protocol. Commu-
nication between Host and the SST49LF00xA occurs via the 4-bit I/O communication signals, FWH [3:0] and the FWH4. In PP mode, the device is programmed via an 11­bit address and an 8-bit data I/O parallel signals. The address inputs are multiplexed in row and column selected by control signal R/C# pin. The column addresses are mapped to the higher internal addresses, and the row addresses are mapped to the lower internal addresses. See the Device Memory Maps in Figures 3 through 6 for address assignments.
FIRMWARE HUB (FWH) MODE
Device Operation
The FWH mode uses a 5-signal communication interface, FWH[3:0] and FWH4, to control operations of the SST49LF00xA. Operations such as Memory Read and Memory Write uses Intel FWH propriety protocol. JEDEC Standard SDP (Software Data Protection) Byte-Program, Sector-Erase and Block-Erase command sequences are incorporated into the FWH memory cycles. Chip-Erase is only available in PP Mode.
The device enters standby mode when FWH4 is high and no internal operation is in progress. The device is in ready mode when FWH4 is low and no activity is on the FWH bus.
Firmware Hub Interface Cycles
Addresses and data are transferred to and from the SST49LF00xA by a series of “fields,” where each field con­tains 4 bits of data. ST49LF00xA supports only single-byte read and writes, and all fields are one clock cycle in length. Field sequences and contents are strictly defined for Read and Write operations. Addresses in this section refer to addresses as seen from the SST49LF00xA’s “point of view,” some calculation will be required to translate these to the actual locations in the memory map (and vice versa) if multiple memory device is used on the bus. Tables 1 and 2 list the field sequences for Read and Write cycles.
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
2
Page 3
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
TABLE 1: FWH READ CYCLE
Clock Cycle
1 START 1101 IN FWH4 must be active (low) for the part to respond. Only the
2 IDSEL 0000 to 1111 IN Indicates which FWH device should respond. If the to IDSEL (ID
3-9 IMADDR YYYY IN These seven clock cycles make up the 28-bit memory
10 IMSIZE 0000 (1 byte) IN A field of this size indicates how many bytes will be or trans-
11 TAR0 1111 IN
12 TAR1 1111 (float) Float
13 RSYNC 0000 (READY) OUT During this clock cycle, the FWH will generate a “ready-
14 DATA YYYY OUT YYYY is the least-significant nibble of the least-significant
15 DATA YYYY OUT YYYY is the most-significant nibble of the least-significant
16 TAR0 1111 OUT
17 TAR1 1111 (float) Float thenINThe master (Intel ICH) resumes control of the bus during
1. Field contents are valid on the rising edge of the present clock cycle.
Field
Name
Field Contents
FWH[3:0]
1
FWH[3:0] Direction Comments
last start field (before FWH4 transitioning high) should be recognized. The START field contents indicate a FWH memory Read cycle.
select) field matches the value ID[3:0], then that particular device will respond to the whole bus cycle.
address. YYYY is one nibble of the entire address. Addresses are transferred most-significant nibble first.
ferred during multi-byte operations. The SST49LF00xA will only support single-byte operation. IMSIZE=0000b
In this clock cycle, the master (Intel ICH) has driven the bus
then Float
then float to all ‘1’s and then floats the bus, prior to the next clock cycle. This is the first part of the bus “turnaround cycle.”
The SST49LF00xA takes control of the bus during this
then OUT
cycle. During the next clock cycle, it will be driving “sync data.”
sync” (RSYNC) indicating that the least-significant nibble of the least-significant byte will be available during the next clock cycle.
data byte.
data byte.
In this clock cycle, the SST49LF00xA has driven the bus to
then Float
all ones and then floats the bus prior to the next clock cycle. This is the first part of the bus “turnaround cycle.”
this cycle.
T1.3 504
CLK
FWH4
FWH[3:0]
STR TAR RSYNCIMSIMADDRIDS DATA TAR
504 ILL F59.1
FIGURE 1: SINGLE-BYTE READ WAVEFORMS
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
3
Page 4
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
TABLE 2: FWH WRITE CYCLE
Clock Cycle
1 START 1110 IN FWH4 must be active (low) for the part to respond.
2 IDSEL 0000 to 1111 IN Indicates which SST49LF00xA device should
3-9 IMADDR YYYY IN These seven clock cycles make up the 28-bit memory
10 IMSIZE 0000 (1 byte) IN This size field indicates how many bytes will be
11 DATA YYYY IN This field is the least-significant nibble of the data byte.
12 DATA YYYY IN This field is the most-significant nibble of the data byte.
13 TAR0 1111 IN then Float In this clock cycle, the master (Intel ICH) has driven the
14 TAR1 1111 (float) Float then OUT The SST49LF00xA takes control of the bus during this
15 RSYNC 0000 OUT The SST49LF00xA outputs the values 0000, indicat-
16 TAR0 1111 OUT then Float In this clock cycle, the SST49LF00xA has driven the
17 TAR1 1111 (float) Float then IN The master (Intel ICH) resumes control of the bus during
1. Field contents are valid on the rising edge of the present clock cycle.
Field
Name
Field Contents
FWH[3:0]
1
FWH[3:0] Direction Comments
Only the last start field (before FWH4 transitioning high) should be recognized. The START field contents indicate a FWH memory Read cycle.
respond. If the IDSEL (ID select) field matches the value ID[3:0], then that particular device will respond to the whole bus cycle.
address. YYYY is one nibble of the entire address. Addresses are transferred most-significant nibble first.
transferred during multi-byte operations. The FWH only supports single-byte writes. IMSIZE=0000b
This data is either the data to be programmed into the flash memory or any valid flash command.
then float bus to all ‘1’s and then floats the bus prior to the next clock cycle. This is the first part of the bus “turnaround cycle.”
cycle. During the next clock cycle it will be driving the “sync” data.
ing that it has received data or a flash command.
bus to all then float ‘1’s and then floats the bus prior to the next clock cycle. This is the first part of the bus “turnaround cycle.”
this cycle.
T2.4 504
CLK
FWH4
FWH[3:0]
STR DATA TA RTA R
IMSIMADDRIDS
RSYNC
504 ILL F60.1
FIGURE 2: WRITE WAVEFORMS
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
4
Page 5
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
Abort Mechanism
If FWH4 is driven low for one or more clock cycles during a FWH cycle, the cycle will be terminated and the device will wait for the ABORT command. The host may drive the FWH[3:0] with ‘1111b’ (ABORT command) to return the device to Ready mode. If abort occurs during a Write oper­ation, the data may be incorrectly altered.
Response To Invalid Fields
During FWH operations, the FWH will not explicitly indicate that it has received invalid field sequences. The response to specific invalid fields or sequences is as follows:
Address out of range: The FWH address sequence is 7 fields long (28 bits), but only the last five address fields (20 bits) will be decoded by SST49LF00xA.
Address A writes to the flash core (A
=0).
(A
22
has the special function of directing reads and
22
=1) or to the register space
22
The SST49LF003A features are equivalent to the SST49LF004A with 128 KByte less memory. For the SST49LF003A, operations beyond the 3-Mbit boundary (below 20000H) are not valid (see Device Memory Map).
Invalid IMSIZE field: If the FWH receives an invalid size field during a Read or Write operation, the device will reset and no operation will be attempted. The SST49LF00xA will not generate any kind of response in this situation. Invalid­size fields for a Read/Write cycle are anything but 0000b.
Device Memory Hardware Write Protection
The Top Boot Lock (TBL#) and Write Protect (WP#) pins are provided for hardware write protection of device memory in the SST49LF00xA. The TBL# pin is used to write protect 16 boot sectors (64 KByte) at the highest flash memory address range for the SST49LF003A/ 004A/008A and 4 boot sectors (16 KByte) for SST49LF002A. WP# pin write protects the remaining sectors in the flash memory.
WP# pin during a Program or Erase operation could cause unpredictable results. TBL# and WP# pins cannot be left unconnected.
TBL# is internally ORed with the top Boot Block Locking register. When TBL# is low, the top Boot Block is hard­ware write protected regardless of the state of the Write­Lock bit for the Boot Block Locking register. Clearing the Write-Protect bit in the register when TBL# is low will have no functional effect, even though the register may indicate that the block is no longer locked.
WP# is internally ORed with the Block Locking register. When WP# is low, the blocks are hardware write pro­tected regardless of the state of the Write-Lock bit for the corresponding Block Locking registers. Clearing the Write-Protect bit in any register when WP# is low will have no functional effect, even though the register may indicate that the block is no longer locked.
Reset
A VIL on INIT# or RST# pin initiates a device reset. INIT# and RST# pins have the same function internally. It is required to drive INIT# or RST# pins low during a system reset to ensure proper CPU initialization.
During a Read operation, driving INIT# or RST# pins low deselects the device and places the output drivers, FWH[3:0], in a high-impedance state. The reset signal must be held low for a minimal duration of time T reset latency will occur if a reset procedure is performed during a Program or Erase operation. See Table 18, Reset Timing Parameters for more information. A device reset during an active Program or Erase will abort the operation and memory contents may become invalid due to data being altered or corrupted from an incomplete Erase or Program operation.
RSTP.
A
An active low signal at the TBL# pin prevents Program and Erase operations of the top boot sectors. When TBL# pin is held high, write protection of the top boot sectors is then determined by the Boot Block Locking register. The WP# pin serves the same function for the remaining sectors of the device memory. The TBL# and WP# pins write protec­tion functions operate independently of one another.
Both TBL# and WP# pins must be set to their required protection states prior to starting a Program or Erase operation. A logic level change occurring at the TBL# or
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
5
Page 6
Advance Information
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Write Operation Status Detection
The SST49LF00xA device provides two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system Write cycle time. The soft­ware detection includes two status bits: Data# Polling
) and Toggle Bit (DQ6). The End-of-Write detection
(DQ
7
mode is incorporated into the FWH Read cycle. The actual completion of the nonvolatile write is asynchronous with the system; therefore, either a Data# Polling or Toggle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an errone­ous result, i.e., valid data may appear to conflict with either
or DQ6. In order to prevent spurious rejection, if an
DQ
7
erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid.
Data# Polling (DQ7)
When the SST49LF00xA device is in the internal Program operation, any attempt to read DQ
will produce the com-
7
plement of the true data. Once the Program operation is completed, DQ though DQ
will produce true data. Note that even
7
may have valid data immediately following the
7
completion of an internal Write operation, the remaining data outputs may still be invalid: valid data on the entire data bus will appear in subsequent successive Read cycles after an interval of 1 µs. During internal Erase opera­tion, any attempt to read DQ internal Erase operation is completed, DQ
will produce a ‘0’. Once the
7
will produce a
7
‘1’. Proper status will not be given using Data# Polling if the address is in the invalid range.
Toggle Bit (DQ6)
During the internal Program or Erase operation, any con­secutive attempts to read DQ
will produce alternating
6
‘0’s and ‘1’s, i.e., toggling between 0 and 1. When the internal Program or Erase operation is completed, the toggling will stop.
Multiple Device Selection
The four ID pins, ID[3:0], allow multiple devices to be attached to the same bus by using different ID strapping in a system. When the SST49LF00xA is used as a boot device, ID[3:0] must be strapped as 0000, all subsequent devices should use a sequential up-count strapping (i.e. 0001, 0010, 0011, etc.). The SST49LF00xA will compare the strapping values, if there is a mismatch, the device will ignore the remainder of the cycle and go into standby mode. For further information regarding FWH device map­ping and paging, please refer to the Intel 82801(ICH) I/O
Controller Hub documentation. Since there is no ID support in PP Mode, to program multiple devices a stand-alone PROM programmer is recommended.
REGISTERS
There are three types of registers available on the SST49LF00xA, the General Purpose Inputs Register, Block Locking Registers, and the JEDEC ID Registers. These registers appear at their respective address location in the 4 GByte system memory map. Unused register loca­tions will read as 00H. Any attempt to read or write any reg­ister during an internal Write operation will be ignored.
General Purpose Inputs Register
The GPI_REG (General Purpose Inputs Register) passes the state of FGPI[4:0] pins at power-up on the SST49LF00xA. It is recommended that the FGPI[4:0] pins are in the desired state before FWH4 is brought low for the beginning of the bus cycle, and remain in that state until the end of the cycle. There is no default value since this is a pass-through register. The GPI register for the boot device appears at FFBC0100H in the 4 GByte system memory map, and will appear elsewhere if the device is not the boot device. Register is not available for read when the device is in Erase/Program operation. See Table 3 for the GPI_REG bits and function.
TABLE 3: G
Bit Function
7:5 Reserved - -
4 FGPI[4]
Reads status of general purpose input pin
3 FGPI[3]
Reads status of general purpose input pin
2 FGPI[2]
Reads status of general purpose input pin
1 FGPI[1]
Reads status of general purpose input pin
0 FGPI[0]
Reads status of general purpose input pin
ENERAL PURPOSE INPUTS REGISTER
Pin #
32-PLCC 32-TSOP
30 6
311
412
513
614
T3.2 504
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
6
Page 7
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
Block Locking Registers
SST49LF00xA provides software controlled lock protection through a set of Block Locking registers. The Block Locking Registers are read/write registers and it is accessible through standard addressable memory locations specified in Table 4 and Table 5. Unused register locations will read as 00H.
TABLE 4: B
Register Block Size
T_BLOCK_LK 16K 3FFFFH - 3C000H FFBF8002H
T_MINUS01_LK 16K
T_MINUS02_LK 16K
T_MINUS03_LK 16K
T_MINUS04_LK 16K
T_MINUS05_LK 16K
T_MINUS06_LK 16K
T_MINUS07_LK 16K
1. Default value at power up is 01H
LOCK LOCKING REGISTERS FOR SST49LF002A
16K 16K
16K
16K
16K
16K
16K
16K
TABLE 5: BLOCK LOCKING REGISTERS FOR SST49LF003A/004A/008A
Block
Register
T_BLOCK_LK 64K 07FFFFH - 070000H 07FFFFH - 070000H 0FFFFFH - 0F0000H FFBF0002H
T_MINUS01_LK 64K 06FFFFH - 060000H 06FFFFH - 060000H 0EFFFFH - 0E0000H FFBE0002H
T_MINUS02_LK 64K 05FFFFH - 050000H 05FFFFH - 050000H 0DFFFFH - 0D0000H FFBD0002H
T_MINUS03_LK 64K 04FFFFH - 040000H 04FFFFH - 040000H 0CFFFFH - 0C0000H FFBC0002H
T_MINUS04_LK 64K 03FFFFH - 030000H 03FFFFH - 030000H 0BFFFFH - 0B0000H FFBB0002H
T_MINUS05_LK 64K 02FFFFH - 020000H 02FFFFH - 020000H 0AFFFFH - 0A0000H FFBA0002H
T_MINUS06_LK 64K
T_MINUS07_LK 64K 00FFFFH - 000000H 08FFFFH - 080000H FFB80002H
T_MINUS08_LK 64K
T_MINUS09_LK 64K 06FFFFH - 060000H FFB60002H
T_MINUS10_LK 64K 05FFFFH - 050000H FFB50002H
T_MINUS11_LK 64K 04FFFFH - 040000H FFB40002H
T_MINUS12_LK 64K 03FFFFH - 030000H FFB30002H
T_MINUS13_LK 64K 02FFFFH - 020000H FFB20002H
T_MINUS14_LK 64K 01FFFFH -010000H FFB10002H
T_MINUS15_LK 64K 00FFFFH - 000000H FFB00002H
1. Default value at power up is 01H
Size
Protected Memory Address Range
01FFFFH - 010000H 09FFFFH - 090000H FFB90002H
1
Protected Memory
Address Package
3BFFFH - 38000H
37FFFH - 34000H 33FFFH - 30000H
2FFFFH - 2C000H 2BFFFH - 28000H
27FFFH - 24000H 23FFFH - 20000H
1FFFFH - 1C000H 1BFFFH - 18000H
17FFFH - 14000H 13FFFH - 10000H
0FFFFH - 0C000H 0BFFFH - 08000H
07FFFH - 04000H 03FFFH - 00000H
1
07FFFFH - 070000H FFB70002H
Memory Map
Register Address
FFBF0002H
FFBE8002H
FFBE0002H
FFBD8002H
FFBD0002H
FFBC8002H
FFBC0002H
Memory Map
Register AddressSST49LF003A SST49LF004A SST49LF008A
T4.1 504
T5.2 504
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
7
Page 8
Advance Information
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
TABLE 6: B
Reserved Bit [7..2] Lock-Down Bit [1] Write-Lock Bit [0] Lock Status
Write Lock
The Write-Lock bit, bit 0, controls the lock state described in Table 6. The default Write status of all blocks after power­up is write locked. When bit 0 of the Block Locking register is set, Program and Erase operations for the corresponding block are prevented. Clearing the Write-Lock bit will unpro­tect the block. The Write-Lock bit must be cleared prior to starting a Program or Erase operation since it is sampled at the beginning of the operation.
The Write-Lock bit functions in conjunction with the hard­ware Write Lock pin TBL# for the top Boot Block. When TBL# is low, it overrides the software locking scheme. The top Boot Block Locking register does not indicate the state of the TBL# pin.
The Write-Lock bit functions in conjunction with the hard­ware WP# pin for blocks 0 to 6. When WP# is low, it over­rides the software locking scheme. The Block Locking register does not indicate the state of the WP# pin.
LOCK LOCKING REGISTER BITS
000000 0 0 Full Access 000000 0 1 Write Locked (Default State at Power-Up) 000000 1 0 Locked Open (Full Access Locked Down) 000000 1 1 Write Locked Down
PARALLEL PROGRAMMING MODE
Device Operation
Commands are used to initiate the memory operation func­tions of the device. The data portion of the software com­mand sequence is latched on the rising edge of WE#. During the software command sequence the row address is latched on the falling edge of R/C# and the column address is latched on the rising edge of R/C#.
Read
The Read operation of the SST49LF00xA device is con­trolled by OE#. OE# is the output control and is used to gate data from the output pins. Refer to the Read cycle timing diagram, Figure 14, for further details.
Reset
A VIL on RST# pin initiates a device reset.
T6.3 504
Lock Down
The Lock-Down bit, bit 1, controls the Block Locking regis­ter as described in Table 6. When in the FWH interface mode, the default Lock Down status of all blocks upon power-up is not locked down. Once the Lock-Down bit is set, any future attempted changes to that Block Locking register will be ignored. The Lock-Down bit is only cleared upon a device reset with RST# or INIT# or power down. Current Lock Down status of a particular block can be determined by reading the corresponding Lock-Down bit. Once a block’s Lock-Down bit is set, the Write-Lock bits for that block can no longer be modified, and the block is locked down in its current state of write accessibility.
JEDEC ID Registers
The JEDEC ID registers for the boot device appear at FFBC0000H and FFBC0001H in the 4 GByte system memory map, and will appear elsewhere if the device is not the boot device. Register is not available for read when the device is in Erase/Program operation. Unused register location will read as 00H. Refer to the relevant application note for details. See Table 7 for the device ID code.
Byte-Program Operation
The SST49LF00xA device is programmed on a byte-by­byte basis. Before programming, one must ensure that the sector, in which the byte which is being programmed exists, is fully erased. The Byte-Program operation is initiated by executing a four-byte command load sequence for Soft­ware Data Protection with address (BA) and data in the last byte sequence. During the Byte-Program operation, the row address (A and the column Address (A edge of R/C#. The data bus is latched in the rising edge of WE#. The Program operation, once initiated, will be com­pleted, within 20 µs. See Figure 15 for Program operation timing diagram, Figure 18 for timing waveforms, and Figure 26 for its flowchart. During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the internal Program operation, the host is free to perform addi­tional tasks. Any commands written during the internal Pro­gram operation will be ignored.
) is latched on the falling edge of R/C#
10-A0
) is latched on the rising
21-A11
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
8
Page 9
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
Sector-Erase Operation
The Sector-Erase operation allows the system to erase the device on a sector-by-sector basis. The sector archi­tecture is based on uniform sector size of 4 KByte. The Sector-Erase operation is initiated by executing a six-byte command load sequence for Software Data Protection with Sector-Erase command (30H) and sector address (SA) in the last bus cycle. The internal Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit methods. See Figure 19 for Sector-Erase timing wave­forms. Any commands written during the Sector-Erase operation will be ignored.
Block-Erase Operation
The Block-Erase Operation allows the system to erase the device in 64 KByte uniform block size for the SST49LF003A/SST49LF004A/SST49LF008A and 16 KByte uniform block size for the SST49LF002A. The Block­Erase operation is initiated by executing a six-byte com­mand load sequence for Software Data Protection with Block-Erase command (50H) and block address. The inter­nal Block-Erase operation begins after the sixth WE# pulse. The End-of-Erase can be determined using either Data# Polling or Toggle Bit methods. See Figure 20 for tim­ing waveforms. Any commands written during the Block­Erase operation will be ignored.
Chip-Erase
The SST49LF00xA device provides a Chip-Erase opera­tion only in PP Mode, which allows the user to erase the entire memory array to the ‘1’s state. This is useful when the entire device must be quickly erased.
The Chip-Erase operation is initiated by executing a six- byte Software Data Protection command sequence with Chip­Erase command (10H) with address 5555H in the last byte sequence. The internal Erase operation begins with the ris­ing edge of the sixth WE#. During the internal Erase opera­tion, the only valid read is Toggle Bit or Data# Polling. See Table 10 for the command sequence, Figure 21 for timing diagram, and Figure 29 for the flowchart. Any commands written during the Chip-Erase operation will be ignored.
Write Operation Status Detection
The SST49LF00xA device provides two software means to detect the completion of a Write (Program or Erase) cycle, in order to optimize the system Write cycle time. The software detection includes two status bits: Data# Polling
) and Toggle Bit (DQ6). The End-of-Write detection
(DQ
7
mode is enabled after the rising edge of WE# which ini­tiates the internal Program or Erase operation.
The actual completion of the nonvolatile write is asynchro­nous with the system; therefore, either a Data# Polling or Tog­gle Bit read may be simultaneous with the completion of the Write cycle. If this occurs, the system may possibly get an erroneous result, i.e., valid data may appear to conflict with either DQ
or DQ6. In order to prevent spurious rejection, if an
7
erroneous result occurs, the software routine should include a loop to read the accessed location an additional two (2) times. If both reads are valid, then the device has completed the Write cycle, otherwise the rejection is valid.
Data# Polling (DQ7)
When the SST49LF00xA device is in the internal Program operation, any attempt to read DQ
will produce the com-
7
plement of the true data. Once the Program operation is completed, DQ though DQ
will produce true data. Note that even
7
may have valid data immediately following the
7
completion of an internal Write operation, the remaining data outputs may still be invalid: valid data on the entire data bus will appear in subsequent successive Read cycles after an interval of 1 µs. During internal Erase operation, any attempt to read DQ Erase operation is completed, DQ
will produce a ‘0’. Once the internal
7
will produce a ‘1’. The
7
Data# Polling is valid after the rising edge of fourth WE# pulse for Program operation. For Sector- or Chip-Erase, the Data# Polling is valid after the rising edge of sixth WE# pulse. See Figure 16 for Data# Polling timing diagram and Figure 27 for a flowchart. Proper status will not be given using Data# Polling if the address is in the invalid range.
Toggle Bit (DQ6)
During the internal Program or Erase operation, any con­secutive attempts to read DQ ‘0’s and ‘1’s, i.e., toggling between 0 and 1. When the internal Program or Erase operation is completed, the toggling will stop. The device is then ready for the next operation. The Toggle Bit is valid after the rising edge of fourth WE# pulse for Program operation. For Sector-, Block- or Chip-Erase, the Toggle Bit is valid after the ris­ing edge of sixth WE# pulse. See Figure 17 for Toggle Bit timing diagram and Figure 27 for a flowchart.
will produce alternating
6
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
9
Page 10
Advance Information
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Data Protection
The SST49LF00xA device provides both hardware and software features to protect nonvolatile data from inadvert­ent writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# pulse of less than 5 ns will not initiate a Write cycle.
Power Up/Down Detection: The Write operation is
V
DD
inhibited when V
Write Inhibit Mode:
is less than 1.5V.
DD
Forcing OE# low, WE# high will inhibit the Write operation. This prevents inadvertent writes during power-up or power-down.
Software Data Protection (SDP)
The SST49LF00xA provides the JEDEC approved Soft­ware Data Protection scheme for all data alteration opera­tion, i.e., Program and Erase. Any Program operation requires the inclusion of a series of three-byte sequences. The three-byte load sequence is used to initiate the Pro­gram operation, providing optimal protection from inadvert­ent Write operations, e.g., during the system power-up or power-down. Any Erase operation requires the inclusion of a six-byte load sequence. The SST49LF00xA device is shipped with the Software Data Protection permanently enabled. See Table 10 for the specific software command codes. During SDP command sequence, invalid com­mands will abort the device to Read mode, within T
RC.
Electrical Specifications
The AC and DC specifications for the FWH Interface sig­nals (FWH[3:0], CLK, FWH4, and RST#) as defined in Section 4.2.2 of the PCI Local Bus Specification, Rev. 2.1. Refer to Table 11 for the DC voltage and current specifica­tions. Refer to the tables on pages 19 through 23 for the AC timing specifications for Clock, Read/Write, and Reset operations.
Product Identification
The product identification mode identifies the device as the SST49LF00xA and manufacturer as SST.
TABLE 7: P
Manufacturer’s ID 0000H BFH FFBC0000H
Device ID
SST49LF002A 0001H 57H FFBC0001H
SST49LF003A 0001H 1BH FFBC0001H
SST49LF004A 0001H 60H FFBC0001H
SST49LF008A 0001H 5AH FFBC0001H
RODUCT IDENTIFICATION
Byte Data
JEDEC ID
Address
Location
T7.5 504
Design Considerations
SST recommends a high frequency 0.1 µF ceramic capacitor to be placed as close as possible between V than 1 cm away from the V
pin of the device. Additionally, a
DD
low frequency 4.7 µF electrolytic capacitor from V should be placed within 1 cm of the VDD pin. If you use a socket for programming purposes add an additional 1-10 µF next to each socket.
The RST# pin must remain stable at V
IH
tion of an Erase operation. WP# must remain stable at V the entire duration of the Erase and Program operations for non-Boot Block sectors. To write data to the top Boot Block sectors, the TBL# pin must also remain stable at V entire duration of the Erase and Program operations.
and VSS less
DD
to V
DD
SS
for the entire dura-
for
IH
for the
IH
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
10
Page 11
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
System Memory
(Top 4 MByte)
FFFFFFFFH
SST49LF002A
(2 Mbit)
FFFC0000H
FFFA0000H
FFF80000H
FFF00000H
SST49LF003A
(3 Mbit)
SST49LF004A
(4 Mbit)
SST49LF008A
(8 Mbit)
Advance Information
FFC00000H
BOOT-CONFIGURATION SYSTEM MEMORY MAP
FUNCTIONAL BLOCK DIAGRAM
TBL#
WP#
INIT#
FWH[3:0]
CLK
FWH4
ID[3:0]
FGPI[4:0]
R/C#
A[10:0]
DQ[7:0]
OE#
WE#
FWH
Interface
Programmer
Interface
Address Buffers & Latches
Range for
Additional FWH Devices
X-Decoder
Control Logic
RST#
IC
504 ILL B1A.3
SuperFlash
Memory
Y-Decoder
I/O Buffers and Data Latches
504 ILL B1.2
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
11
Page 12
Advance Information
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
TBL#
Block 15
3C000H
3BFFFH
Block 14
38000H
37FFFH
Block 13
34000H
33FFFH
Block 12
30000H
2FFFFH
Block 11
2C000H
3FFFFH
Block 10
2BFFFH
28000H
Block 9
27FFFH
24000H
23FFFH
Block 8
WP# for
Block 0~14
20000H
1FFFFH
Block 7
1C000H
1BFFFH
Block 6
18000H
17FFFH
Block 5
14000H
13FFFH
Block 4
10000H
0FFFFH
Block 3
0C000H
0BFFFH
Block 2
08000H
07FFFH
Block 1
04000H
03FFFH
300000
Block 0 (16 KByte)
02FFFH
02000H
01FFFH
01000H
00FFFH
00000H
FIGURE 3: DEVICE MEMORY MAP FOR SST49LF002A
Boot Block
4 KByte Sector 3
4 KByte Sector 2
4 KByte Sector 1
4 KByte Sector 0
504 ILL F52.7
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
12
Page 13
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
7FFFFH
TBL#
Block 7
70000H
6FFFFH
Block 6
60000H
5FFFFH
Block 5
50000H
WP# for
Block 2~6
Block 4
4FFFFH
40000H
3FFFFH
Block 3
30000H 2F000H
Block 2
22000H 21000H 20000H
*Block 1
1FFFFH
10000H
*Block 0
(64 KByte)
* operations to shaded area are not valid.
0FFFFH
00000H
FIGURE 4: DEVICE MEMORY MAP FOR SST49LF003A
Boot Block
4 KByte Sector 47
4 KByte Sector 34
4 KByte Sector 33
4 KByte Sector 32
Invalid Range
Invalid Range
504 ILL F56.1
WP# for
Block 0~6
FIGURE 5: D
TBL#
Block 7
Block 6
Block 5
Block 4
Block 3
Block 2
Block 1
Block 0
(64 KByte)
EVICE MEMORY MAP FOR SST49LF004A
7FFFFH
70000H
6FFFFH
60000H
5FFFFH
50000H
4FFFFH
40000H
3FFFFH
30000H
2FFFFH
20000H
1FFFFH
10000H 0F000H
02000H 01000H 00000H
Boot Block
4 KByte Sector 2
4 KByte Sector 1 4 KByte Sector 0
504 ILL F45.5
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
13
Page 14
Advance Information
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
TBL#
WP# for
Block 0~14
Block 15
Block 14
Block 13
Block 12
Block 11
Block 10
Block 9
Block 8
Block 7
Block 6
Block 5
Block 4
Block 3
Block 2
Block 1
0FFFFFH
0F0000H
0EFFFFH
0E0000H
0DFFFFH
0D0000H
0CFFFFH
0C0000H
0BFFFFH
0B0000H
0AFFFFH
0A0000H
09FFFFH
090000H
08FFFFH
080000H
07FFFFH
070000H
06FFFFH
060000H
05FFFFH
050000H
04FFFFH
040000H
03FFFFH
030000H
02FFFFH
020000H
01FFFFH
010000H
00FFFFH
Boot Block
4 KByte Sector 15
Block 0 (64 KByte)
002000H
001000H
000000H
4 KByte Sector 2
4 KByte Sector 1
4 KByte Sector 0
504 ILL F57.0
FIGURE 6: DEVICE MEMORY MAP FOR SST49LF008A
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
14
Page 15
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
NC NC NC
V
(VSS)
SS
IC (IC)
A10 (FGPI4)
R/C# (CLK) V
(VDD)
DD
NC
RST# (RST#)
A9 (FGPI3) A8 (FGPI2) A7 (FGPI1) A6 (FGPI0)
A5 (WP#)
A4 (TBL#)
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Standard Pinout
Top View
Die Up
( ) Designates FWH Mode
FIGURE 7: PIN ASSIGNMENTS FOR 32-LEAD TSOP (8MM X 14MM)
)
DD
(V
DD
A7(FGPI1)
A6 (FGPI0)
A5 (WP#)
A4 (TBL#)
A3 (ID3)
A2 (ID2)
A1 (ID1)
A0 (ID0)
DQ0 (FWH0)
A8 (FGPI2)
A9 (FGPI3)
RST# (RST#)NCV
4 3 2 1 32 31 30
5
6
7
8
32-lead PLCC
9
10
Top View
11
12
13
14 15 16 17 18 19 20
504 ILL F01.4
R/C# (CLK)
A10 (FGPI4)
29
28
27
26
25
24
23
22
21
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
IC (IC)
VSS (VSS)
NC
NC
V
DD (VDD
OE# (INIT#)
WE# (FWH4) NC
DQ7 (RES)
OE# (INIT#) WE# (FWH4) V
(VDD)
DD
DQ7 (RES) DQ6 (RES) DQ5 (RES) DQ4 (RES) DQ3 (FWH3) V
(VSS)
SS
DQ2 (FWH2) DQ1 (FWH1) DQ0 (FWH0) A0 (ID0) A1 (ID1) A2 (ID2) A3 (ID3)
)
)
SS
(V
SS
V
DQ4 (RES)
( ) Designates FWH Mode
FIGURE 8: P
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
IN ASSIGNMENTS FOR 32-LEAD PLCC
DQ1 (FWH1)
DQ2 (FWH2)
DQ5 (RES)
DQ3 (FWH3)
504 ILL F02.3
DQ6 (RES)
15
Page 16
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
TABLE 8: PIN DESCRIPTION
Interface
Symbol Pin Name Type
A
10-A0
DQ
7
Address I X Inputs for low-order addresses during Read and Write operations.
-DQ0Data I/O X To output data during Read cycles and receive input data during
OE# Output Enable I X To gate the data output buffers
WE# Write Enable I X To control the Write operations
IC Interface
Configuration Pin
INIT# Initialize I X This is the second reset pin for in-system use. This pin is internally
ID[3:0] Identification Inputs I X These four pins are part of the mechanism that allows multiple parts
FGPI[4:0] General Purpose Inputs I X These individual inputs can be used for additional board flexibility.
TBL# Top Block Lock I X When low, prevents programming to the Boot Block sectors at top of
FWH[3:0] FWH I/Os I/O X I/O Communications
CLK Clock I X To provide a clock input to the control unit
FWH4 FWH Input I X Input Communications
RST# Reset I X X To reset the operation of the device
WP# Write Protect I X When low, prevents programming to all but the highest addressable
R/C# Row/Column Select I X Select For the Programming interface, this pin determines whether
RES Reserved X These pins must be left unconnected.
V
DD
V
SS
Power Supply PWR X X To provide power supply (3.0-3.6V)
Ground PWR X X Circuit ground (OV reference) All VSS pins must be grounded.
NC No Connection I X X Unconnected pins
1. I = Input, O = Output
1
FunctionsPP FWH
Addresses are internally latched during a Write cycle. For the pro­gramming interface, these addresses are latched by R/C# and share the same pins as the high-order address inputs.
Write cycles. Data is internally latched during a Write cycle. The out­puts are in tri-state when OE# is high.
I X X This pin determines which interface is operational. When held high,
programmer mode is enabled and when held low, FWH mode is enabled. This pin must be setup at power-up or before return from reset and not change during device operation. This pin is internally pulled- down with a resistor between 20-100 KΩ.
combined with the RST# pin; If this pin or RST# pin is driven low, identical operation is exhibited.
to be attached to the same bus. The strapping of these pins is used to identify the component.The boot device must have ID[3:0]=0000 and it is recommended that all subsequent devices should use sequential up-count strapping. These pins are internally pulled-down with a resistor between 20-100 KΩ.
The state of these pins can be read through GPI_REG register. These inputs should be at their desired state before the start of the PCI clock cycle during which the read is attempted, and should remain in place until the end of the Read cycle. Unused GPI pins must not be floated.
memory. When TBL# is high it disables hardware write protection for the top block sectors. This pin cannot be left unconnected.
blocks. When WP# is high it disables hardware write protection for these blocks. This pin cannot be left unconnected.
the address pins are pointing to the row addresses, or to the column addresses.
T8.4 504
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
16
Page 17
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
TABLE 9: OPERATION MODES SELECTION (PP MODE)
Mode RST# OE# WE# DQ Address
Read Program V Erase V
Reset V
Write Inhibit
V
IH
IH
IH
IL
V
IH
XX
Product Identification
1. X can be VIL or VIH, but no other value.
2. Device ID 57H for SST49LF002A, 1BH for SST49LF003A, 60H for SST49LF004A, and 5AH for SST49LF008A
V
IH
TABLE 10: SOFTWARE COMMAND SEQUENCE
1
1st
Command Sequence
Byte-Program 5555H AAH 2AAAH 55H 5555H A0H BA
Sector-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H SA
Block-Erase 5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H BA
Chip-Erase
Software ID Entry
Software ID Exit
Software ID Exit
1. FWH Mode uses consecutive Write cycles to complete a command sequence; PP Mode uses consecutive bus cycles to complete a
2. Address format A14-A0 (Hex), Addresses A21-A15 can be VIL or VIH, but no other value, for the Command sequence in PP Mode.
3. BA = Program Byte address
4. SAX for Sector-Erase Address
5. BAX for Block-Erase Address
6. Chip-Erase is supported in PP Mode only
7. SST Manufacturer’s ID = BFH, is read with A0=0,
8. The device does not remain in Software Product ID mode if powered down.
9. Both Software ID Exit operations are equivalent
6
7,8
9
9
command sequence.
With A With A With A With A
= 0; 49LF002A Device ID = 57H, is read with A0 = 1.
17-A1
= 0; 49LF003A Device ID = 1BH, is read with A0 = 1.
18-A1
= 0; 49LF004A Device ID = 60H, is read with A0 = 1.
18-A1
= 0; 49LF008A Device ID = 5AH, is read with A0 = 1.
19-A1
Write Cycle
2
Addr
Data Addr2Data Addr2Data Addr2Data Addr2Data Addr2Data
5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H
5555H AAH 2AAAH 55H 5555H 90H
XXH F0H
5555H AAH 2AAAH 55H 5555H F0H
V
IL
V
IH
V
IH
V
IH
V
IL
V
IL
D
OUT
D
IN
1
X
A
IN
A
IN
Sector or Block address, XXH for Chip-Erase
XXHigh Z X
V
IL
V
IL
1
2nd
Write Cycle
XHigh Z/D
V
IH
V
IH
High Z/D
Manufacturer’s ID (BFH) Device ID
1
3rd
Write Cycle
OUT
OUT
2
4th
Write Cycle
3
1
Data
X
X
A18-A1=VIL, A0=V A18-A1=VIL, A0=VIH
1
5th
Write Cycle
Write Cycle
IL
X
X
6th
4
5
T9.5 504
1
30H
50H
T10.5 504
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
17
Page 18
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to
1
Transient Voltage (<20 ns) on Any Pin to Ground Potential
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V
Package Power Dissipation Capability (Ta=25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
2
Output Short Circuit Current
1. Do not violate processor or chipset limitations on the INIT# pin.
2. Outputs shorted for no more than one second. No more than one output shorted at a time. This note applies to non-PCI outputs.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
V
+0.5V
DD
OPERATING RANGE
Range Ambient Temp V
Commercial 0°C to +85°C 3.0-3.6V
DD
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . . 3 ns
Output Load . . . . . . . . . . . . . . . . . . . . . C
See Figures 24 and 25
1. FWH interface signals use PCI load test conditions
TABLE 11: DC OPERATING CHARACTERISTICS (ALL INTERFACES)
Limits
Symbol Parameter
I
DD
Active VDD Current Address input=VIL/VIH, at F=1/TRC Min,
Read 12 mA OE#=
2
Write
I
SB
Standby VDD Current (FWH Interface)
3
I
RY
Ready Mode VDD Current (FWH Interface)
I
I
Input Current for IC, ID [3:0] pins
I
LI
I
LO
4
V
IHI
4
V
ILI
V
IL
V
IH
V
OL
V
OH
1. Test conditions apply to PP mode.
2. IDD active while Erase or Program is in progress.
3. The device is in Ready Mode when no activity is on the FWH bus.
4. Do not violate processor or chipset specification regarding INIT# voltage.
Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max
Output Leakage Current 1 µA V
INIT# Input High Voltage 1.0 VDD+0.5 V VDD=VDD Max
INIT# Input Low Voltage -0.5 0.4 V VDD=VDD Min
Input Low Voltage -0.5 0.3 V
Input High Voltage 0.5 V
Output Low Voltage 0.1 V
Output High Voltage 0.9 V
Min Max Units
24 mA OE#=VIH, VDD=VDD Max (PP Mode)
100 µA FWH4=0.9VDD, f=33 MHz VDD=VDD Max, All
10 mA FWH4=VIL, f=33 MHz VDD=VDD Max
200 µA VIN=GND to VDD, VDD=VDD Max
DD
VDD+0.5 V VDD=VDD Max
DD
DD
DD
VVDD=VDD Min
VIOL=1500µA, VDD=VDD Min
VIOH=-500 µA, VDD=VDD Min
1
Test Conditions
V
DD=VDD
Max (PP Mode)
V
, WE#=V
IH
other inputs ≥ 0.9 V
1
IH
DD
All other inputs ≥ 0.9 V
=GND to VDD, VDD=VDD Max
OUT
or ≤ 0.1 V
or ≤ 0.1 V
DD
= 30 pF
L
DD
DD
T11.9 504
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
18
Page 19
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
TABLE 12: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol Parameter Minimum Units
1
T
PU-READ
T
PU-WRITE
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter
Power-up to Read Operation 100 µs
1
Power-up to Write Operation 100 µs
T12.2 504
TABLE 13: PIN IMPEDANCE (V
=3.3V, Ta=25 °C, f=1 Mhz, other pins open)
DD
Parameter Description Test Condition Maximum
1
C
I/O
1
C
IN
2
L
PIN
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. Refer to PCI spec.
I/O Pin Capacitance V
Input Capacitance V
= 0V 12 pF
I/O
= 0V 12 pF
IN
Pin Inductance 20 nH
T13.4 504
TABLE 14: RELIABILITY CHARACTERISTICS
Symbol Parameter Minimum Specification Units Test Method
1
N
END
1
T
DR
1
I
LT H
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Endurance 10,000 Cycles JEDEC Standard A117
Data Retention 100 Years JEDEC Standard A103
Latch Up 100 + I
DD
mA JEDEC Standard 78
T14.3 504
TABLE 15: CLOCK TIMING PARAMETERS
Symbol Parameter Min Max Units
T
CYC
T
HIGH
T
LOW
- CLK Slew Rate (peak-to-peak) 1 4 V/ns
- RST# or INIT# Slew Rate 50 mV/ns
CLK Cycle Time 30 ns
CLK High Time 11 ns
CLK Low Time 11 ns
T15.1 504
T
cyc
T
high
0.6 V
0.4 V
0.3 V
0.5 V
DD
DD
DD
DD
T
low
0.2 V
DD
0.4 V
DD
(minimum)
504 ILL F27.0
p-to-p
FIGURE 9: CLK WAVEFORM
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
19
Page 20
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
AC CHARACTERISTICS (FWH MODE)
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
TABLE 16: READ/WRITE CYCLE TIMING PARAMETERS (FWH MODE), V
=3.0-3.6V
DD
Symbol Parameter Min Max Units
T
CYC
T
SU
T
DH
1
T
VAL
T
BP
T
SE
T
BE
T
SCE
T
ON
T
OFF
1. Minimum and maximum times have different loads. See PCI spec.
Clock Cycle Time 30 ns
Data Set Up Time to Clock Rising 7 ns
Clock Rising to Data Hold Time 0 ns
Clock Rising to Data Valid 2 11 ns
Byte Programming Time 20 µs
Sector-Erase Time 25 ms
Block-Erase Time 25 ms
Chip-Erase Time 100 ms
Clock Rising to Active (Float to Active Delay) 2 ns
Clock Rising to Inactive (Active to Float Delay) 28 ns
TABLE 17: AC INPUT/OUTPUT SPECIFICATIONS (FWH MODE)
Symbol Parameter Min Max Units Conditions
IOH(AC) Switching Current High -12 V
-17.1(VDD-V
(Test Point) -32 V
IOL(AC) Switching Current Low 16 V
26.7 V
(Test Point) 38 V
I
CL
I
CH
2
slewr
2
slewf
1. See PCI spec.
2. PCI specification output load is used.
Low Clamp Current -25+(VIN+1)/0.015 mA -3 < VIN ≤ -1
High Clamp Current 25+(VIN-VDD-1)/0.015 mA VDD+4 > VIN ≤ VDD+1
Output Rise Slew Rate 1 4 V/ns 0.2VDD-0.6VDD load
Output Fall Slew Rate 1 4 V/ns 0.6VDD-0.2VDD load
DD
DD
OUT
OUT
)
Equation C
DD
Equation D
DD
mAmA0 < V
1
mA V
1
mAmAVDD >V
mA V
≤ 0.3V
OUT
0.3VDD < V
0.7VDD < V
=0.7V
OUT
OUT
0.6VDD > V
0.18VDD > V
=0.18V
OUT
< 0.9V
OUT
<V
OUT
DD
≥0.6V
> 0.1V
OUT
OUT
DD
DD
> 0
T16.3 504
DD
DD
DD
DD
T17.3 504
TABLE 18: RESET TIMING PARAMETERS, V
=3.0-3.6V (FWH MODE)
DD
Symbol Parameter Min Max Units
T
PRST
T
KRST
T
RSTP
T
RSTF
1
T
RST
T
RSTE
1. There will be a latency of T
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
VDD stable to Reset Low 1 ms
Clock Stable to Reset Low 100 µs
RST# Pulse Width 100 ns
RST# Low to Output Float 48 ns
RST# High to FWH4 Low 1 µs
RST# Low to reset during Sector-/Block-Erase or Program 10 µs
if a reset procedure is performed during a Program or Erase operation.
RSTE
T18.5 504
20
Page 21
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
V
DD
CLK
RST#/INIT#
FWH[3:0]
FWH4
FIGURE 10: RESET TIMING DIAGRAM
T
PRST
T
KRST
T
RSTF
T
RSTP
T
RSTE
T
RST
Sector-/Block-Erase
or Program operation
aborted
504 ILL F51.1
CLK
FWH [3:0]
(Valid Output Data)
FWH [3:0]
(Float Output Data)
FIGURE 11: OUTPUT TIMING PARAMETERS
V
TEST
V
TH
V
TL
T
VAL
T
ON
T
OFF
504 ILL F49.1
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
21
Page 22
Advance Information
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
V
TH
CLK
T
SU
V
TEST
V
TL
T
DH
FWH [3:0]
(Valid Input Data)
Inputs
Valid
V
MAX
504 ILL F50.1
FIGURE 12: INPUT TIMING PARAMETERS
TABLE 19: INTERFACE MEASUREMENT CONDITION PARAMETERS
Symbol Value Units
1
V
TH
1
V
TL
V
TEST
1
V
MAX
Input Signal Edge Rate 1 V/ns
1. The input test environment is done with 0.1 VDD of overdrive over VIH and VIL. Timing parameters must be met with no more overdrive than this. V may use different voltage values, but must correlate results back to these parameters.
specified the maximum peak-to-peak waveform allowed for measuring input timing. Production testing
MAX
0.6 V
0.2 V
0.4 V
0.4 V
DD
DD
DD
DD
V
V
V
V
T19.3 504
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
22
Page 23
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
AC CHARACTERISTICS (PP MODE)
Advance Information
TABLE 20: READ CYCLE TIMING PARAMETERS V
=3.0-3.6V (PP MODE)
DD
Symbol Parameter Min Max Units
T
RC
T
RST
T
AS
T
AH
T
AA
T
OE
T
OLZ
T
OHZ
T
OH
TABLE 21: PROGRAM/ERASE CYCLE TIMING PARAMETERS V
Read Cycle Time 270 ns
RST# High to Row Address Setup 1 µs
R/C# Address Set-up Time 45 ns
R/C# Address Hold Time 45 ns
Address Access Time 120 ns
Output Enable Access Time 60 ns
OE# Low to Active Output 0 ns
OE# High to High-Z Output 35 ns
Output Hold from Address Change 0 ns
=3.0-3.6V (PP MODE)
DD
Symbol Parameter Min Max Units
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
T
RST
AS
AH
CWH
OES
OEH
OEP
OET
WP
WPH
DS
DH
IDA
BP
SE
BE
SCE
RST# High to Row Address Setup 1 µs
R/C# Address Setup Time 50 ns
R/C# Address Hold Time 50 ns
R/C# to Write Enable High Time 50 ns
OE# High Setup Time 20 ns
OE# High Hold Time 20 ns
OE# to Data# Polling Delay 40 ns
OE# to Toggle Bit Delay 40 ns
WE# Pulse Width 100 ns
WE# Pulse Width High 100 ns
Data Setup Time 50 ns
Data Hold Time 5 ns
Software ID Access and Exit Time 150 ns
Byte Programming Time 20 µs
Sector-Erase Time 25 ms
Block-Erase Time 25 ms
Chip-Erase Time 100 ms
T20.2 504
T21.2 504
TABLE 22: RESET TIMING PARAMETERS, V
=3.0-3.6V (PP MODE)
DD
Symbol Parameter Min Max Units
T
PRST
T
RSTP
T
RSTF
1
T
RST
T
RSTE
T
RSTC
1. There will be a reset latency of T
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
VDD stable to Reset Low 1 ms
RST# Pulse Width 100 ns
RST# Low to Output Float 48 ns
RST# High to Row Address Setup 1 µs
RST# Low to reset during Sector-/Block-Erase or Program 10 µs
RST# Low to reset during Chip-Erase 50 µs
RSTE
or T
if a reset procedure is performed during a Program or Erase operation.
RSTC
T22.1 504
23
Page 24
Advance Information
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
V
DD
Addresses
R/C#
RST#
DQ
7-0
FIGURE 13: RESET TIMING DIAGRAM
T
PRST
T
RSTF
T
RSTP
T
T
RSTC
RSTE
T
RST
Row Address
Sector-/Block-Erase
or Program operation
aborted
Chip-Erase
aborted
504 ILL F58.0
T
RST#
Addresses
RSTP
T
RST
T
ASTAH
T
RC
Row AddressColumn AddressRow Address
T
T
AS
AH
Column Address
R/C#
V
IH
High-Z
T
OLZ
T
AA
T
OH
T
OE
T
OHZ
Data Valid
High-Z
504 ILL F28.2
DQ
WE#
OE#
7-0
FIGURE 14: READ CYCLE TIMING DIAGRAM (PP MODE)
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
24
Page 25
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
T
RSTP
T
RST#
RST
Advance Information
Addresses
T
AS
T
AH
Column AddressRow Address
T
AS
R/C#
OE#
T
OES
WE#
DQ
7-0
FIGURE 15: WRITE CYCLE TIMING DIAGRAM (PP MODE)
T
AH
T
CWH
T
WP
T
DS
Data Valid
T
OEH
T
WPH
T
DH
504 ILL F29.2
Addresses
Row Column
R/C#
WE#
OE#
T
OEP
DQ
7
FIGURE 16: D
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
ATA# POLLING TIMING DIAGRAM (PP MODE)
D#D D# D
504 ILL F54.2
25
Page 26
Advance Information
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
6
Row Column
T
OET
D D
Addresses
R/C#
WE#
OE#
DQ
FIGURE 17: TOGGLE BIT TIMING DIAGRAM (PP MODE)
504 ILL F55.0
Addresses
DQ
FIGURE 18: B
Four-Byte Code for Byte-Program
5555 2AAA 5555 BA
R/C#
OE#
T
WP
WE#
SB0
T
WPH
SB1 SB2 SB3
7-0
BA = Byte-Program Address
YTE-PROGRAM TIMING DIAGRAM (PP MODE)
Internal Program Starts
Data55AA A0
T
BP
504 ILL F53.0
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
26
Page 27
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Six-Byte code for
Sector-Erase Operation
Addresses
DQ
R/C#
OE#
WE#
7-0
5555 2AAA 5555 5555 2AAA SA
T
WP
T
WPH
SB0
SAx = Sector Address
SB1 SB2 SB3 SB4 SB5
55AA55AA 80 30
x
Internal Erasure Starts
Advance Information
T
SE
504 ILL F32.1
FIGURE 19: SECTOR-ERASE TIMING DIAGRAM (PP MODE)
Six-Byte code for
Block-Erase Operation
Addresses
5555 2AAA 5555 5555 2AAA BA
R/C#
OE#
T
WP
T
WPH
SB0
BAx = Block Address
SB1 SB2 SB3 SB4 SB5
DQ
WE#
7-0
x
55AA55AA 80 50
T
BE
Internal Erasure Starts
504 ILL F48.1
FIGURE 20: B
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
LOCK-ERASE TIMING DIAGRAM (PP MODE)
27
Page 28
Advance Information
Addresses
R/C#
OE#
WE#
DQ
7-0
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Six-Byte code for Chip-Erase Operation
5555 2AAA 5555 5555 2AAA 5555
T
WP
T
WPH
SB0 SB1 SB2 SB3 SB4 SB5
55AA55AA 80 10
T
SCE
Internal Erasure Starts
504 ILL F33.1
FIGURE 21: CHIP-ERASE TIMING DIAGRAM (PP MODE)
Three-byte sequence for
Software ID Entry
Addresses
5555 2AAA 5555 0000 0001
R/C#
OE#
T
IDA
DQ
WE#
7-0
T
WP
T
WPH
55AA 90
SW0
SW1 SW2
Device ID = 57H for SST49LF002A, 1BH for SST49LF003A,
60H for SST49LF004A, 5AH for SST49LF008A
T
BF
AA
Device ID
504 ILL F34.5
FIGURE 22: S
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
OFTWARE ID ENTRY AND READ (PP MODE)
28
Page 29
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Three-Byte Sequence for
Software ID Exit and Reset
Addresses
2AAA 5555
T
WP
T
WPH
SW0 SW1 SW2
AA 55 F0
T
IDA
DQ
5555
R/C#
OE#
WE#
7-0
Advance Information
504 ILL F35.2
FIGURE 23: SOFTWARE ID EXIT AND RESET (PP MODE)
V
IHT
V
ILT
AC test inputs are driven at V for inputs and outputs are V
FIGURE 24: AC I
NPUT/OUTPUT REFERENCE WAVEFORMS (PP MODE)
V
IT
(0.9 VDD) for a logic “1” and V
IHT
(0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% ↔ 90%) are <5 ns.
IT
REFERENCE POINTS OUTPUTINPUT
V
OT
504 ILL F06.1
(0.1 VDD) for a logic “0”. Measurement reference points
ILT
Note: V
- V
- V
- V
- V
INPUT
OUTPUT
INPUT
INPUT
Tes t
Tes t
HIGH Test
LOW Test
IT
V
OT
V
IHT
V
ILT
TO TESTER
TO DUT
C
L
504 ILL F07.0
FIGURE 25: A T
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
EST LOAD EXAMPLE (PP MODE)
29
Page 30
Advance Information
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Start
Write data: AAH Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: A0H
Address: 5555H
FIGURE 26: BYTE-PROGRAM ALGORITHM
Load Byte
Address/Byte
Data
Wait for end of
Program (TBP,
Data# Polling
bit, or Toggle bit
operation)
Program
Completed
504 ILL F36.1
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
30
Page 31
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
Internal Timer
Byte-
Program/Erase
Initiated
Wait TBP,
T
SCE, TBE
or TSE
Program/Erase
Completed
Program/Erase
No
Toggle Bit
Byte-
Initiated
Read byte
Read same
byte
Does DQ
match?
Ye s
Data# Polling
Byte-
Program/Erase
Initiated
No
Read DQ
Is DQ7 =
7
true data?
Ye s
6
Program/Erase
Completed
FIGURE 27: WAIT OPTIONS
Program/Erase
Completed
504 ILL F37.0
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
31
Page 32
Advance Information
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Software Product ID Entry
Command Sequence
Write data: AAH Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 90H
Address: 5555H
Wait T
IDA
Read Software ID
Software Product ID Exit &
Reset Command Sequence
Write data: AAH Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: F0H
Address: 5555H
Wait T
IDA
Return to normal
operation
Write data: F0H
Address: XXH
Wait T
IDA
Return to normal
operation
504 ILL F38.1
FIGURE 28: SOFTWARE PRODUCT COMMAND FLOWCHARTS
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
32
Page 33
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
Chip-Erase
Command Sequence
Write data: AAH Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 80H
Address: 5555H
Write data: AAH Address: 5555H
Write data: 55H
Address: 2AAAH
Block-Erase
Command Sequence
Write data: AAH Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 80H
Address: 5555H
Write data: AAH Address: 5555H
Write data: 55H
Address: 2AAAH
Sector-Erase
Command Sequence
Write data: AAH Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 80H
Address: 5555H
Write data: AAH Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 10H
Address: 5555H
Wait Options
Chip erased
to FFH
Write data: 50H
Address: BA
X
Wait Options
Block erased
to FFH
Write data: 30H
Address: SA
X
Wait Options
Sector erased
to FFH
504 ILL F39.1
FIGURE 29: ERASE COMMAND SEQUENCE
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
33
Page 34
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
Advance Information
PRODUCT ORDERING INFORMATION
Device Speed Suffix1 Suffix2
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49L
F00xA -XXX -XX -XX
Package Modifier
H = 32 leads
Package Type
N = PLCC W = TSOP (type 1, die up, 8mm x 14mm)
Operating Temperature
C = Commercial = 0°C to +85°C
Minimum Endurance
4 = 10,000 cycles
Serial Access Clock Frequency
33 = 33 MHz
Version
Device Density
008 = 8 Mbit 004 = 4 Mbit 003 = 3 Mbit 002 = 2 Mbit
Voltage Range
L = 3.0-3.6V
Valid combinations for SST49LF002A
SST49LF002A-33-4C-WH SST49LF002A-33-4C-NH
Valid combinations for SST49LF003A
SST49LF003A-33-4C-WH SST49LF003A-33-4C-NH
Valid combinations for SST49LF004A
SST49LF004A-33-4C-WH SST49LF004A-33-4C-NH
Valid combinations for SST49LF008A
SST49LF008A-33-4C-WH SST49LF008A-33-4C-NH
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
34
Page 35
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
PACKAGING DIAGRAMS
TOP VIEW SIDE VIEW BOTTOM VIEW
.495
Optional
Pin #1
Identifier
.048 .042
.485 .453 .447
1232
.020 R. MAX.
.029 .023
x 30˚
.112 .106
.040 .030
R.
Advance Information
.042 .048
.553
.595
.547
.585
.050 BSC
Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in inches (max/min).
3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches.
4. Coplanarity: 4 mils.
.032 .026
.050 BSC
.140 .125
.095 .075
.021 .013
.400 BSC
.015 Min.
.530 .490
32-LEAD PLASTIC LEAD CHIP CARRIER (PLCC)
ACKAGE CODE: NH
SST P
.032 .026
32-plcc-NH-3
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
35
Page 36
Advance Information
Pin # 1 Identifier
2 Mbit / 3 Mbit / 4 Mbit / 8 Mbit Firmware Hub
SST49LF002A / SST49LF003A / SST49LF004A / SST49LF008A
1.05
0.95
0.50
BSC
8.10
7.90
12.50
12.30
1.20
0.70
0.50
Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions,
although some dimensions may be more stringent.
2. All linear dimensions are in millimeters (max/min).
3. Coplanarity: 0.1 mm
4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.
14.20
13.80
max.
32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 8MM X 14MM SST PACKAGE CODE: WH
DETAIL
1mm
0.27
0.17
0.15
0.05
0˚- 5˚
0.70
0.50
32-tsop-WH-7
Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036
www.SuperFlash.com or www.sst.com
©2002 Silicon Storage Technology, Inc. S71161-06-000 2/02 504
36
Page 37
Loading...