Datasheet SST441NL, U441NL Datasheet (Vishay) [ru]

SST441NL/U441NL

New Product

Vishay Siliconix

Monolithic N-Channel JFET Duals

PRODUCT SUMMARY

V

FEATURES BENEFITS APPLICATIONS

D Anti Latchup Capability
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 1 pA
D Low Noise
D High CMRR: 90 dB

(V) V

GS(off)

-1 to -6 -25 4.5 -1 20

(BR)GSS

Min (V) gfs Min (mS) IG Typ (pA) |V

GS1

- V

D External Substrate Bias—Avoids Latchup
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time

Accuracy

D High-Speed Performance
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal

|Max (mV)

GS2

D Wideband Differential Amps
D High-Speed,

Temp-Compensated,
Single-Ended Input Amps

D High Speed Comparators
D Impedance Converters

DESCRIPTION

The SST441NL is a monolithic high-speed dual JFET
mounted in a single SO-8 package. This JFET is an excellent
choice for use as wideband differential amplifiers in
demanding test and measurement applications.

Pins 4 and 8 on the SST441NL and pin 4 on the U441NL part
numbers enable the substrate to be connected to a positive,
external bias (V

SUBSTRATE S

) to avoid latchup.

DD

Narrow Body SOIC

S

1

1

D

2

1

G

3

1

4

Marking Codes:

SST441NL - 441NL

Top View

8
7
6
5

SUBSTRATE
G

2

D

2

2

ABSOLUTE MAXIMUM RATINGS

Gate-Drain, Gate-Source Voltage -25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate Current 50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead Temperature (

Storage Temperature -55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature -55 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . .

1

/16” from case for 10 sec.) 300_C. . . . . . . . . . . . . . . . . . .

The U441NL in the hermetically sealed TO-78 package is
available with full military processing.

The SO-8 package provides ease of manufacturing. The
symmetrical pinout prevents improper orientation. The SO-8
package is available with tape-and-reel options for
compatibility with automatic assembly methods.

TO-78

S

1

1

D

1

2

3

G

1

Power Dissipation : Per Side

Notes
a. Derate 2.4 mW/_C above 25_C
b. Derate 4 mW/_C above 25_C

4

CASE, SUBSTRATE

Top View

U441NL

Total

G

2

7

D

2

6

5

S

2

a

b

300 mW. . . . . . . . . . . . . . . . . . . . . . . .

500 mW. . . . . . . . . . . . . . . . . . . . . . . . . . .

For applications information see AN102.

Document Number: 72056
S-22526–Rev. A, 17-Feb-03

www.vishay.com

7-1

SST441NL/U441NL

S

V

DS

= 10 V, ID = 5 mA

S

VDS = 10 V, ID = 5 mA

S

VDS = 10 V, ID = 5 mA

Vishay Siliconix

New Product

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter Symbol

Test Conditions

Min Typ

Static

Gate-Source Breakdown Voltage V
Gate-Source Cutoff Voltage V
Saturation Drain Current

Gate Reverse Current I

Gate Operating Current I

Gate-Source Forward Voltage V

b

(BR)GSS

GS(off)

I

DSS

GSS

G

GS(F)

IG = -1 mA, VDS = 0 V
VDS = 10 V, ID = 1 nA -1 -3.5 -6

VDS = 10 V, VGS = 0 V 6 15 30 mA

VGS = -15 V, VDS = 0 V -1 -500 pA

TA = 125_C

VDG = 10 V, ID = 5 mA -1 -500 pA

TA = 125_C

IG = 1 mA , VDS = 0 V 0.7 V

-25 -35

Dynamic

Common-Source
Forward Transconductance

Common-Source
Output Conductance

Common-Source
Forward Transconductance

Common-Source
Output Conductance

Common-Source
Input Capacitance

Common-Source
Reverse Transfer Capacitance

Equivalent Input Noise Voltage e

g

fs

g

os

g

fs

g

os

C

iss

C

rss

n

V

= 10 V, I

D

V

= 10 V, ID = 5 mA

D

V

= 10 V, ID = 5 mA

D

VDS = 10 V, ID = 5 mA

= 5 mA

D

f = 1 kHz

f = 100 MHz

f = 1 MHz

f = 10 kHz

4.5 6 9 mS

Matching

Differential Gate-Source Voltage

Gate-Source Voltage Differential
Change with Temperature

Saturation Drain Current Ratio

Transconductance Ratio

Common Mode Rejection Ratio CMRR VDG = 10 to 15 V, ID = 5 mA 90 dB

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NNZ
b. Pulse test: PW v300 ms duty cycle v3%.
c. Assumes smaller value in the numerator.

c

c

|

V

GS1–VGS2

|

D

V

GS1–VGS2

DT

I

DSS1

I

DSS2

g
g

fs1
fs2

|

|

VDG = 10 V, ID = 5 mA 7 20 mV

VDG = 10 V, ID = 5 mA

T

= -55 to 125_C

A

VDS = 10 V, VGS = 0 V 0.98

VDS = 10 V, ID = 5 mA

f = 1 kHz

a

Max Unit

-0.2 nA

-0.2 nA

20 200

5.5 mS

30

3.5

1

4

10

0.98

√Hz

mV/_C

V

mS

mS

pF

nV⁄

www.vishay.com

7-2

Document Number: 72056

S-22526–Rev. A, 17-Feb-03

SST441NL/U441NL

New Product

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance

25

20

15

vs. Gate-Source Cutoff Voltage

I

@ VDS = 10 V, VGS = 0 V

DSS

@ VDG = 10 V, VGS = 0 V

g

fs

f = 1 kHz

g

fs

10

5

- Saturation Drain Current (mA)

DSS

I

0

0-5-4-2-1

V

- Gate-Source Cutoff Voltage (V) VDG - Drain-Gate Voltage (V)

GS(off)

20

V

Output Characteristics

= -3 V

GS(off)

16

12

8

- Drain Current (mA)I

D

I

4

I

DSS

-3

VGS= 0 V

-0.4 V

-0.8 V

-1.2 V

-1.6 V

15

g

fs

- Forward Transconductance (mS)

13

11

9

7

5

-100 nA

-10 nA

-1 nA
TA = 125_C

-100 pA

- Gate Leakage

G

-10 pA

I

-1 pA

TA = 25_C

-0.1 pA
0151052025

25

20

15

10

- Drain Current (mA)

D

I

5

Gate Leakage Current

1 mA

100 mA

Output Characteristics

V

= -4 V

GS(off)

Vishay Siliconix

IG @ ID = 5 mA

1 mA

100 mA

5 mA

I

@

GSS

125_C

I

@ 25_C

GSS

VGS= 0 V

-0.4 V

-0.8 V

-1.2 V

-1.6 V

-2.0 V

-2.4 V

0

020161284

VDS - Drain-Source Voltage (V)

5

V

Output Characteristics

= -3 V

GS(off)

4

-0.2 V

3

2

- Drain Current (mA)

D

1

0

010.80.60.40.2
VDS - Drain-Source Voltage (V)

Document Number: 72056
S-22526–Rev. A, 17-Feb-03

VGS= 0 V

-2.0 V

-1.2 V

-1.4 V

-1.6 V

-0.6 V

-0.8 V

-1.0 V

-0.4 V

0

012168420

10

V

8

6

4

- Drain Current (mA)

D

I

2

0

010.80.60.40.2

VDS - Drain-Source Voltage (V)

Output Characteristics

= -4 V

GS(off)

VDS - Drain-Source Voltage (V)

-2.8 V

VGS= 0 V

-0.4 V

-0.8 V

-1.2 V

-1.6 V

-2.0 V

-2.4 V

-2.8 V

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7-3

SST441NL/U441NL

Vishay Siliconix

New Product

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Gate-Source Differential Voltage

20

V

GS(off)

16

12

8

- Drain Current (mA)

D

I

4

0

0 -1.5-1.0-0.5 -2.0 -2.5

Voltage Differential with Temperature

100

VDG = 10 V

DT
DT

V/ _C

m

()

10

GS2

V

-

t

D

GS1

V

D

Transfer Characteristics

= -3 V

TA = -55_C

25_C

125_C

VGS - Gate-Source Voltage (V) ID - Drain Current (mA)

VDS = 10 V

100

VDG = 10 V
T

A

(mV)

10

GS2

V

­GS1

V

1

0.1 1 10

vs. Drain Current

150

= 25 to 125_C

A

= -55 to 25_C

A

130

110

CMRR (dB)

CMRR = 20 log

90

70

vs. Drain Current

= 25_C

Common Mode Rejection Ratio

vs. Drain Current

DVDG = 10 - 20 V

D

DV

DG

V

GS1 VGS2

5 - 10 V

1

0.1 1 10

100

80

60

40

- Voltage Gain

V

A

20

0

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7-4

I

- Drain Current (mA) ID - Drain Current (mA)

D

Circuit Voltage Gain vs. Drain Current

g

A

V

Assume VDD = 15 V, VDS = 5 V

R

I

D

fsRL

+

1 ) RLg

10 V

+

L

-4 V

- Drain Current (mA)

os

I

D

V

GS(off)

1100.1

= -3 V

50

0.1 1 10

On-Resistance vs. Drain Current

V

= -3 V

GS(off)

-4 V

0.1 1.0 10
ID - Drain Current (mA)

Document Number: 72056

S-22526–Rev. A, 17-Feb-03

- Drain-Source On-Resistance ( Ω )

r

200

160

120

80

40

DS(on)

0

SST441NL/U441NL

New Product

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

- Input Capacitance (pF)C
iss

Common-Source Input Capacitance

10

8

6

4

2

0

0 -16 -20-8-4

50

40

vs. Gate-Source Voltage

f = 1 MHz

VDS = 0 V

5 V

15 V

VGS - Gate-Source Voltage (V)

Output Conductance vs. Drain Current

V

= -3 V VDS = 10 V

GS(off)

- Reverse Feedback Capacitance (pF)C
rss

-12

20

f = 1 kHz

16

Common-Source Reverse Feedback

Capacitance vs. Gate-Source Voltage

5

f = 1 MHz

4

3

VDS = 0 V

2

1

0

0-20-16-8-4

5 V

15 V

VGS - Gate-Source Voltage (V)

Equivalent Input Noise Voltage vs. Frequency

VDS = 10 V

Vishay Siliconix

-12

30

20

- Output Conductance (µS)

10

os

g

0

0.1 1 10
ID - Drain Current (mA)

TA = -55_C

25_C

Common-Source Forward Transconductance

vs. Drain Current

10

V

= -3 V VDS = 10 V

GS(off)

8

6

4

2

- Forward Transconductance (mS)

fs

g

0

0.1 1 10

TA = -55_C

25_C

ID - Drain Current (mA)

125_C

f = 1 kHz

125_C

12

ID @ 10 mA

8

en - Noise Voltage nV / Hz

4

0

VGS = 0 V

10 100 1 k 100 k10 k

f - Frequency (Hz)

On-Resistance and Output Conductance

vs. Gate-Source Cutoff Voltage

r

DS

rDS @ ID = 1 mA, VGS = 0 V

@ VDG = 10 V, VGS = 0 V, f = kHz

g

os

0-3-5-4-2-1

V

- Gate-Source Cutoff Voltage (V)

GS(off)

- Drain-Source On-Resistance ( Ω )

DS(on)

r

250

200

150

100

50

0

100

g

os

os

- Output Conductance ( m

50

S)g

0

Document Number: 72056
S-22526–Rev. A, 17-Feb-03

www.vishay.com

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