Page 1
SST4403 / MMST4403
Transistors
PNP Medium Power Transistor
(Switching)
SST4403 / MMST4403
zFeatu res
1) BVCEO = −40V (Min.) ; at IC= −1mA
2) Complements the SST4401 / MMST4401
zPackage, marking, and p ackaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
SST4403
SST3
R2T
T116
3000
MMST4403
SMT3
R2T
T146
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
+
Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE
+
Symbol
CBO
V
V
CEO
V
EBO
I
P
Tj
Tstg
C
C
Limits
−40
−40
−6
−0.6
0.2
0.35
150
−55 to +150
Unit
V
V
V
A
W
W
˚C
˚C
zElectrical characteristics (T a=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
DC current transfer ratio h
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
Parameter
Symbol Min. Typ. Max. Unit Conditions
CBO
BV
BV
BV
I
CBO
I
EBO
CE(sat)
BE(sat)
f
Cob
Cib
tstg
T
td
tr
tf
−
CEO
EBO
FE
40
−
40
−
5
−
−
−−−
−−−
−
0.75
−−−
30
60
100
100
20
200
−
−−
−−
−−
−−
−−
−
−
−
−
−
−−
−−
−−
−−−
−
−−
−
−
zDimensions (Unit : mm)
SST4403
ROHM : SST3
MMST4403
ROHM : SMT3
EIAJ : SC-59
V
−
−
−
−
0.1
−
0.1
0.4
0.75 IC/I
0.95
1.3
300
−
8.5
30 pF
15 ns
20 ns
225 ns
30 ns
µA
µA
MHz
pF
C
=
−
100µA
I
V
I
C
=
−
1mA
V
I
E
=
−
100µA
V
CB
=
−
35V
V
EB
=
−
5V
IC/I
B
=
−
B
=
C/IB
=
I
I
C/IB
=
V
CE
=
−
V
CE
=
−
CE
=
−
V
V
CE
=
−
V
CE
=
−
CE
=
−
V
V
CB
=
−
EB
=
−
V
CC
=
−
V
V
CC
=
−
V
CC
=
−
V
CC
=
−
150mA/
−
500mA/
−
150mA/
−
500mA/
1V, I
1V, I
1V, I
1V, I
2V, I
10V, I
10V, f=100kHz
0.5V, f=100kHz
30V, V
30V, V
30V, I
30V, I
V
V
−
15mA
−
50mA
−
15mA
−
50mA
C
=
−
0.1mA
C
=
−
1mA
C
=
−
10mA
C
=
−
150mA
C
=
−
500mA
E
=
20mA, f=100MHz
EB(OFF)
=
−
EB(OFF)
=
−
C
=
−
150mA, I
C
=
−
150mA, I
2V, I
2V, I
B1
B1
C
=
C
=
=
=
−
150mA, I
−
150mA, I
−
I
B2
−
I
B2
=
=
−
15mA
−
15mA
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
B1
=
−
15mA
B1
=
−
15mA
Rev.C 1/3
Page 2
Transistors
zElectrical characteristic curves
100
Ta=25˚C
(mA)
C
50
COLLECTOR CURRENT : I
0
COLLECTOR-EMITTER VOLTAGE : V
Fig.1 Grounded emitter output
1.8
(V)
1.6
BE (sat)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0 10 100 1000
BASE-EMITTER SATURATION VOLTAGE : V
COLLECTOR CURRENT : I
Fig.2 Base-emitter saturation
voltage vs. collector current
1000
FE
600
500
400
300
200
100
1B=0µA
5
characteristics
CE
Ta=25˚C
C
/ IB=10
I
C
(mA)
100
(V)
SST4403 / MMST4403
1000
FE
100
DC CURRENT GAIN : h
10
0.1 101.0 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current ( I )
1000
FE
100
DC CURRENT GAIN : h
10
0.1 101.0 100 1000
Ta=125˚C
Ta=25˚C
Ta= −55˚C
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( II )
Ta=25˚C
V
f=1kHz
CE
=10V
(V)
0.3
CE (sat)
VCE=10V
1V
Ta=25˚C
VCE=10V
Ta=25˚C
C / IB
I
=10
100
AC CURRENT GAIN : h
10
0.1 101.0 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.5 AC current gain vs. collector current
0.2
0.1
COLLECTOR-EMITTER
SATURATION VOLTAGE : V
0
1.0 10 100 1000
COLLECTOR CURRENT : IC (
Fig.6 Collector-emitter saturation
mA)
voltage vs. collector current
Rev.C 2/3
Page 3
Transistors
1.8
(V)
1.6
BE(on)
1.4
1.2
1.0
0.8
0.6
0.4
EMITTER ON VOLTAGE : V
-
0.2
BASE
0
1.0 10 100 1000
COLLECTOR CURRENT : IC (
Fig.7 Grounded emitter propagation
characteristics
100
pF)
10
Cib
C
ob
Ta=25˚C
V
CE
=10V
mA)
Ta=25˚C
f=1MHz
1000
(MHz)
T
100
BANDWIDTH PRODUCT : f
-
CURRENT GAIN
10
1
COLLECTOR CURRENT : IC (mA)
Fig.8 Gain bandwidth product
1000
(ns)
100
Ta=25˚C
CE
=10V
V
10 100 1000
vs. collector current
Ta=25˚C
C / IB
=10
I
VCC=30V
SST4403 / MMST4403
100
(V)
CE
100MHz
200MHz
10
1
COLLECTOR-EMITTER VOLTAGE : V
0.1
1
10 100 1000
COLLECTOR CURRENT : IC (
Fig.9 Gain bandwidth product
500
(ns)
100
300MHz
250MHz
Ta=25˚C
200MHz
mA)
Ta=25˚C
V
C
I
CC
=30V
/ IB=10
CAPACITANCE (
1
0.1
1 10 100
REVERSE BIAS VOLTAGE (
Fig.10 Input /output capacitance
vs. voltage
1000
(ns)
100
STORAGE TIME : ts
10
1
10 100 1000
COLLECTOR CURRENT : IC (
Fig.13 Storage time vs. collector
current
Ta=25˚C
V
CC
=30V
C
=10IB1=10I
I
V)
mA)
TURN ON TIME : ton
10
1
10V
10 100 1000
COLLECTOR CURRENT : IC (
mA)
Fig.11 Turn-on time vs.collector
current
1000
B2
Ta=25˚C
V
CC
=30V
C
=10IB1=10I
I
B2
RISE TIME : tr
10
5
1
10 100 1000
COLLECTOR CURRENT : IC (
mA)
Fig.12 Rise time vs. collector
current
(ns)
100
FALL TIME : tf
10
1
10 100 1000
COLLECTOR CURRENT : IC (
mA)
Fig.14 Fall time vs. collector
current
Rev.C 3/3
Page 4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
Page 5
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