Page 1
UMT3904 / SST3904 / MMST3904 / 2N3904
Transistors
NPN General Purpose Transistor
UMT3904 / SST3904 / MMST3904 / 2N3904
Features
!!!!
CEO
1) BV
> 40V (IC = 1mA)
2) Complements the UMT3906 / SST3906 / MMST3906
/ 2N3906.
Package, marking and packaging specifications
!!!!
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
Absolute maximum ratings
!!!!
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
When mounted on a 7 x 5 x 0.6 mm ceramic board.
*
UMT3904
UMT3
R1A
T106
3000
Parameter
UMT3904,
SST3904,
MMST3904
SST3904, MMST3904
2N3904
SST3904
SST3
R1A
T116
3000
MMST3904
SMT3
R1A
T146
3000
(Ta = 25°C)
Symbol
CBO
V
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
2N3904
TO-92
3000
Limits
60
40
6
0.2
0.2
0.35
0.625
150
−55~+150
-
T93
Unit
V
V
V
A
W
W
*
W
°C
°C
External dimensions
!!!!
UMT3904
ROHM : UMT3
EIAJ : SC-70
SST3904
ROHM : SST3
MMST3904
ROHM : SMT3
EIAJ : SC-59
2N3904
ROHM : TO-92
EIAJ : SC-43
0.2
±
4.8
(12.7Min.)
(Units : mm)
2.0±0.2
1.3±0.1
0.65 0.65
(2)(1)
0.1
0.1
±
±
2.1
1.25
(3)
+0.1
0.3
−0
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95
0.95
(2)
(1)
0.2
0.1
−
+
1.3
(3)
+0.1
0.4
−0.05
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95
0.95
(2)
(1)
0.2
0.1
−
+
1.6
(3)
+0.1
0.4
−0.05
All terminals have same dimensions
4.8±0.2
2.5Min.
+
0.15
0.5
−
0.05
(1)
(2) (3)
+
0.3
2.5
−
0.1
5
0.9±0.1
0.7±0.1
0.2
0~0.1
(1) Emitter
(2) Base
0.4
~
0.15±0.05
0.1
(3) Collector
+0.2
0.95
−0.1
0.45±0.1
0~0.1
0.2
±
0.2Min.
2.4
+0.1
0.15
−0.06
+0.2
1.1
−0.1
0.8±0.1
0.2
±
2.8
+0.1
0.15
−0.06
±
0.2
3.7
0.45
±
0.1
(1) Emitter
(2) Base
(3) Collector
0~0.1
(1) Emitter
0.6
(2) Base
~
0.3
(3) Collector
(1) Emitter
(2) Base
2.3
(3) Collector
Electrical characteristics
!!!!
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage V
Base-emitter saturation voltage V
DC current transfer ratio h
Transition frequency
Collector output capacitance
Emitter input capacitance Cib - - 8 pF
Delay time td - - 35 ns
Rise time tr - - 35 ns
Storage time tstg - - 200 ns
Fall time tf - - 50 ns
Parameter
(Ta = 25°C)
Symbol Min. Typ. Max. Unit Conditions
BV
CBO
60
BV
BV
I
CES
I
EBO
CE(sat)
BE(sat)
f
T
Cob
40
CEO
EBO
FE
6
-
-
- - 0.2
- - 0.3 I
0.65 - 0.85
- - 0.95
40 - - V
70 - -
100 - 300 -
~
60 - 30 - -
300--
-
-
-
-
-
-
-
-
50
50
-4MHzpFV
I
V
C
= 10µA
V
I
C
= 1mA
V
I
E
= 10µA
nA
V
CB
= 30V
nA
V
EB
= 3V
IC/IB = 10mA/1mA
V
C/IB
= 50mA/5mA
C/IB
= 10mA/1mA
I
V
I
C/IB
= 50mA/5mA
CE
= 1V , IC = 0.1mA
V
CE
= 1V , IC = 1mA
V
CE
= 1V , IC = 10mA
V
CE
= 1V , IC = 50mA
V
CE
= 1V , IC = 100mA
CE
= 20V , IE = −10mA, f = 100MHz
CB
= 10V , f = 100kHz
V
EB
= 0.5V , f = 100kHz
V
V
CC
= 3V , V
V
V
V
BE(OFF)
CC
= 3V , V
BE(OFF)
CC
= 3V , IC = 10mA , IB1 = −IB2 = 1mA
CC
= 3V , IC = 10mA , IB1 = −IB2 = 1mA
= 0.5V , IC = 10mA , IB1 = 1mA
= 0.5V , IC = 10mA , IB1 = 1mA
Page 2
Transistors
Electrical characteristic curves
!
10
mA)
8
(
C
6
4
2
COLLECTOR CURRENT : I
0
COLLECTOR-EMITTER VOLTAGE : VCE (
Fig.1 Grounded emitter output
characteristics
40
35
30
25
20
15
10
5.0
IB=0µA
10
Ta=25°C
UMT3904 / SST3904 / MMST3904 / 2N3904
V)
(
CE(sat)
0.3
0.2
0.1
200
V)
0
0.1 1.0 10 100
COLLECTOR EMITTER SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (
Fig.2 Collector-emitter saturation
voltage vs. collector current
Ta=25
IC / IB=10
mA)
°C
500
FE
100
DC CURRENT GAIN : h
10
5
0.1 101.0 100 1000
COLLECTOR CURRENT : IC (
VCE=1V
3V
mA)
5V
10V
Ta=25°C
Fig.3 DC current gain vs. collector current ( Ι )
500
FE
100
DC CURRENT GAIN : h
10
Ta=125°C
Ta=25°C
Ta=−55°C
5
0.1 101.0 100 1000
COLLECTOR CURRENT : IC (
mA)
VCE=5V
Fig.4 DC current gain vs. collector current ( ΙΙ )
Page 3
Transistors
UMT3904 / SST3904 / MMST3904 / 2N3904
500
FE
100
AC CURRENT GAIN : h
10
5
0.01 1.00.1 10 100
COLLECTOR CURRENT : IC (mA)
Ta=25
VCE=5V
f=1kHz
Fig.5 AC current gain vs. collector current
1.8
(V)
1.6
BE(ON)
1.2
0.8
0.4
BASE EMITTER VOLTAGE : V
0
0.1 1.0 10 100
COLLECTOR CURRENT : IC (
Ta=25°C
VCE=5V
mA)
Fig.7 Grounded emitter propagation
characteristics
1000
ns)
100
TURN ON TIME : ton (
10
1.0
40V
15V
VCC=3V
COLLECTOR CURRENT : IC (
Fig.8 Turn-on time vs. collector
current
10 100
°C
Ta=25°C
IC / IB=10
(V)
1.8
BE(sat)
1.6
1.2
0.8
0.4
0
BASE EMITTER SATURATION VOLTAGE : V
0.1 1.0 10 100
COLLECTOR CURRENT : IC (
Fig.6 Base-emitter saturation
voltage vs. collector current
1000
ns)
100
RISE TIME : tr (
10
1.0
mA)
COLLECTOR CURRENT : IC (
Fig.9 Rise time vs. collector
current
Ta=25°C
IC / IB=10
mA)
VCC=40V
10 100
Ta=25°C
C
/ IB=10
I
mA)
1000
Ta=25°C
IC=10IB1=10I
ns)
40V
100
15V
STORAGE TIME : ts (
VCE=3V
10
1.0
COLLECTOR CURRENT : IC (
10 100
Fig.10 Storage time vs. collector
current
mA)
B2
1000
ns)
100
FALL TIME : tf (
10
1.0
COLLECTOR CURRENT : IC (
10 100
Fig.11 Fall time vs. collector
current
Ta=25°C
VCC=40V
C/IB
=10
I
mA)
50
pF)
10
Cib
Cob
CAPACITANCE (
1
0.5
0.1
1.0 10 100
REVERSE BIAS VOLTAGE (
Fig.12 Input / output capacitance
vs. voltage
Ta=25
f=1MHz
V)
°C
Page 4
Transistors
UMT3904 / SST3904 / MMST3904 / 2N3904
100
V)
(
CE
100MHz 200MHz 400MHz
10
1.0
COLLECTOR-EMITTER VOLTAGE : V
0.1
0.1
COLLECTOR CURRENT : IC (
500MHz
300 MHz
300MHz
200MHz
1.0 10 100
Fig.13 Gain bandwidth product
10µ
VCB=25V
A)
(
CBO
1µ
100n
10n
1n
0.1n
COLLECTOR CUTOFF CURRENT : I
0
ANBIENT TEMPERATURE : Ta (
7525 50 100 125 150
Fig.16 Noise characteristics ( Ι )
Ta=25
100MHz
mA)
°C)
1000
°C
MHz)
(
T
100
10
1.0
COLLECTOR CURRENT : IC (
CURRENT GAIN-BANDWIDTH PRODUCT : f
Fig.14 Gain bandwidth product
vs. collector current
100k
(Ω)
S
10k
1k
SOURCE RESISTANCE : R
100
0.01
NF=1.0dB
3.0dB
5.0dB
8.0dB
0.1 1 10
COLLECTOR CURRENT : IC (
Fig.17 Noise characteristics ( ΙΙ )
Ta=25°C
VCE=5V
10 100
1.0dB
3dB
5dB
8dB
mA)
12dB
Ta=25
VCE=5V
f=10kHz
mA)
100
hoe
10
hie
1
h PARAMETER NORMALIZED TO 1mA
0.1
0.1
COLLECTOR CURRENT : IC (mA)
hre
hfe
Ta=25°C
IC=1mA
hie=3.84kΩ
hfe=141
hre=5.03 × 10
1 10 100
hoe=5.58µS
Fig.15 h parameter vs. collector current
100k
°C
12dB
8dB
5dB
10k
1k
3.0dB
5.0dB
SOURCE RESISTANCE : RS (Ω)
8.0dB
100
0.01
COLLECTOR CURRENT : IC (mA)
3dB
1.0dB
NF=1.0dB
0.1 1 10
Fig.18 Noise characteristics ( ΙΙΙ )
VCE=5V
f=270Hz
Ta=25°C
VCE=5V
f=1kHz
−
5
100k
(Ω)
S
10k
NF=3.0dB
1k
5.0dB
SOURCE RESISTANCE : R
8.0dB
100
0.01
12dB
8dB
5dB
3dB
0.1 1 10
COLLECTOR CURRENT : IC (
Fig.19 Noise characteristics ( ΙV )
Ta=25
VCE=5V
f=10Hz
mA)
°C
12
10
dB)
8
6
4
NOISE FIGURE : NF (
2
0
10 1k100 10k 100k
FREQUENCY : f (
Hz)
Ta=25
VCE=5V
C
=100µA
I
S
R
Fig.20 Noise vs. collector current
°C
=10kΩ
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