Datasheet sst3585 Datasheet

r

Elektronische Bauelemente

N And P-Channel Enhancement Mode Power MOSFET

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SST3585 provide the designer with best combination

of fast switching, low on-resistance and cost effectiveness.

The SOT-26 package is universally used for all

commercial-industrial surface mount applications.

FEATURES

 Low Gate Charge  Low On-resistance

MARKING CODE

3 5 8 5





 = Date Code

PACKAGE INFORMATION

SST3585

3.5A, 20V, R

-2.5A, -20V, R

H A

E FL G

REF.

Millimeter Millimete

Min. Max.

A 2.70 3.10 G 0.37 REF. B 2.60 3.00 H 0.30 0.55 C 1.20 REF. J - D 1.40 1.80 K 0.12 REF.

E 0.95 REF. L - 0.10 F 0.60 REF.

TOP VIEW

DS(ON)

SOT-26

D

C

75m

160m

B

REF.

Min. Max.

J

K

Package MPQ Leader Size

SOT-26 3K 7 inch

ABSOLUTE MAXIMUM RATINGS (T

Parameter Symbol

Drain-Source Voltage VDS 20 -20 V

Gate-Source Voltage VGS ±12 ±12 V

Continuous Drain Current 3

Pulsed Drain Current 1 I

Power Dissipation P

Maximum Junction to Ambient 3 R

Linear Derating Factor 0.01 W / °C

= 25°C unless otherwise specified)

A

Ratings

N-Channel P-Channel

TA = 25°C 3.5 -2.5

TA = 70°C

ID

2.8 -1.97

10 -10 A

DM

1.14 W

D

110 °C / W

θJA

Unit

A

Operating Junction & Storage Temperature Range TJ, T

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

03-Jan-2012 Rev. G Page 1 of 7

-55~150 °C

STG

y

SST3585

3.5A, 20V, R

Elektronische Bauelemente

N And P-Channel Enhancement Mode Power MOSFET

-2.5A, -20V, R

DS(ON)

75m

160m

ELECTRICAL CHARACTERISTICS (T

Parameter S

= 25°C unless otherwise specified)

J

mbol Min. Typ. Max. Unit Test Conditions

Static

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Gate-Threshold Voltage

Forward Transconductance

Gate-Source Leakage Current

Drain-Source Leakage Current

Drain-Source On-Resistance 1

Total Gate Charge1

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay Time1

Rise Time

Turn-off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

03-Jan-2012 Rev. G Page 2 of 7

N-Ch 20 - - VGS=0, ID=250μA

P-Ch

N-Ch - 0.02 - Reference to 25°C, ID=1mA

P-Ch

N-Ch 0.5 - 1.2 VDS=VGS, ID=250μA

P-Ch

N-Ch - 7 - VDS=5V, ID=3A

P-Ch

N-Ch - - ±100 VGS= ±12V

P-Ch

△BV

BV

V

I

DSS

GS(th)

g

fs

GSS

/△T

-20 - -

J

- -0.01 -

- - -1.2

- 4 -

- - ±100

V

VGS=0, ID= -250μA

V/°C

Reference to 25°C, ID= -1mA

V

VDS=VGS, ID= -250μA

S

VDS= -5V, ID= -2A

nA

VGS= ±12V

N-Ch - - 1 VDS=20 V, VGS=0

P-Ch - - -1 VDS= -20 V, VGS=0

N-Ch - - 10 VDS=16V, VGS=0

P-Ch

I

DSS

μA

- - -25

VDS= -16V, VGS=0

N-Ch - - 75 VGS=4.5V, ID=3.5A

P-Ch - - 160 VGS= -4.5V, ID= -2.5A

N-Ch - - 125 VGS=2.5V, ID=1.2A

P-Ch

N-Ch - 4 7

P-Ch

N-Ch - 0.7 -

P-Ch

N-Ch - 2 -

P-Ch

N-Ch - 6 -

P-Ch

N-Ch - 8 -

P-Ch

N-Ch - 10 -

P-Ch

N-Ch - 3 -

P-Ch

N-Ch - 430 520

P-Ch

N-Ch - 55 -

P-Ch

N-Ch - 40 -

P-Ch

N-Ch - 1.4 1.7

P-Ch

R

DS(ON)

Qgs

Q

T

C

Qg

d(on)

Tr

d(off)

Tf

oss

Rg

gd

iss

rss

- - 300

- 5 8

- 1 -

- 2 -

- 6 -

mΩ

nC

V

= -2.5V, ID= -2A

GS

N-Channel V

=16V, VGS=4.5V, ID=3A

DS

P-Channel V

= -16V, VGS= -4.5V, ID= -2A

DS

N-Channel VDS=15V, RG=3.3Ω,RD=15Ω V

=5V, ID=1A

- 17 -

- 16 -

nS

GS

P-Channel V

= -10V, RG=3.3Ω,RD=10Ω

DS

V

= -10V, ID= -1A

GS

- 5 -

- 630 750

- 50 -

pF

N-Channel V

=0, VDS=20V, f=1.0MHz

GS

P-Channel V

=0, VDS= -20V, f=1.0MHz

GS

- 40 -

- 7 10

Ω f=1.0MHz

SST3585

3.5A, 20V, R

Elektronische Bauelemente

N And P-Channel Enhancement Mode Power MOSFET

-2.5A, -20V, R

DS(ON)

75m

160m

ELECTRICAL CHARACTERISTICS (T

Parameter Symbol Min. Typ. Max. Unit Test Conditions

Forward On Voltage1

Reverse Recovery Time

Reverse Recovery Charge

Notes:

1 Pulse width limited by Max. junction temperature. 2 Pulse width≦300μs, duty cycle≦2%. 3 Surface mounted on 1 in

N-Ch - - 1.2 IS=1.2A, VGS=0

P-Ch

N-Ch - 16 - IS=3A, VGS=0 ,dI/dt=100A/μs

P-Ch

N-Ch - 8 - IS=3A, VGS=0 ,dI/dt=100A/μs

P-Ch

2

copper pad of FR4 board; t≦5 sec. 180°C/W when mounted on min. copper pad.

= 25°C unless otherwise specified)

J

Source-Drain Diode

V

SD

T

RR

Q

rr

- - -1.2 V IS= -1.2A, VGS=0

- 20 -

- 15 -

ns

IS= -2A, VGS=0 ,dI/dt=100A/μs

nC

IS= -2A, VGS=0 ,dI/dt=100A/μs

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

03-Jan-2012 Rev. G Page 3 of 7

Elektronische Bauelemente

CHARACTERISTICS CURVE (N-Channel)

SST3585

3.5A, 20V, R

-2.5A, -20V, R

N And P-Channel Enhancement Mode Power MOSFET

DS(ON)

75m

160m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

03-Jan-2012 Rev. G Page 4 of 7

Elektronische Bauelemente

CHARACTERISTICS CURVE (N-Channel)

SST3585

3.5A, 20V, R

-2.5A, -20V, R

N And P-Channel Enhancement Mode Power MOSFET

DS(ON)

75m

160m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

03-Jan-2012 Rev. G Page 5 of 7

Elektronische Bauelemente

CHARACTERISTICS CURVE (P-Channel)

SST3585

3.5A, 20V, R

-2.5A, -20V, R

N And P-Channel Enhancement Mode Power MOSFET

DS(ON)

75m

160m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

03-Jan-2012 Rev. G Page 6 of 7

Elektronische Bauelemente

CHARACTERISTICS CURVE (P-Channel)

SST3585

3.5A, 20V, R

-2.5A, -20V, R

N And P-Channel Enhancement Mode Power MOSFET

DS(ON)

75m

160m

http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

03-Jan-2012 Rev. G Page 7 of 7

Datasheet sst3585 Datasheet [en, de]