Datasheet SST29VE020-250-4I-WN, SST29VE020-250-4I-WH, SST29VE020-250-4I-UN, SST29VE020-250-4I-UH, SST29VE020-250-4I-PN Datasheet (Silicon Storage Technology)
...Page 1
©2001 Silicon Storage Technology, Inc.
S71062-06-000 6/01 307
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
SSF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
2 Mbit (256K x8) Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
FEATURES:
• Single Voltage Read and Write Operations
– 5.0V-only for SST29EE020
– 3.0-3.6V for SST29LE020
– 2.7-3.6V for SST29VE020
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current: 20 mA (typical) for 5V and
10 mA (typical) for 3.0/2.7V
– Standby Current: 10 µA (typical)
• Fast Page-Write Operation
– 128 Bytes per Page, 2048 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 10 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
– 5.0V-only operation: 120 and 150 ns
– 3.0-3.6V operation: 200 and 250 ns
– 2.7-3.6V operation: 200 and 250 ns
• Latched Address and Data
• Automatic Write Timing
– Internal V
PP
Generation
• End of Write Detection
– Toggle Bit
– Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via
Software Operation
• TTL I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
– 32-pin PDIP
PRODUCT DESCRIPTION
The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write
EEPROM manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate
cell design and th ick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE/LE/VE020 write with a single
power supply. Internal Erase /Pro gram is transp ar en t to th e
user. The SST29EE/LE/VE020 conform to JEDEC standard pinouts for byte-wide memories.
Featuring high performance Page-Write, the SST29EE/LE/
VE020 provide a typica l Byte-Write time of 39 µsec. The
entire memor y, i.e., 256 KBytes, can be written page -bypage in as litt le as 10 s econds, when u sing interface features such as Toggle Bit or Data# Polling to indicate the
completion of a W ri te cy cle. To protect agains t inadvertent
write, the SST29EE/LE/VE020 have on-chip hardware and
Software Data Protection schemes. Designed, manufactured, and tested for a wid e spectrum of ap plications, the
SST29EE/LE/VE02 0 are offered with a guaranteed PageWrite endurance of 10,000 cycles. Data retention is rated at
greater th an 10 0 years .
The SST29EE/LE /VE020 are suited for applications that
require convenient and economi cal updating of program,
configuration, or data memory. For all system applicatio ns,
the SST29EE/ LE/VE020 signifi cantly imp rov e perf ormance
and reliability, while lowering power consumption. The
SST29EE/LE/VE 020 improve flexibility while lowering the
cost for program, data, and confi guration storage appli cations.
To meet high density, surface mount requirements, the
SST29EE/LE/VE020 are offered in 32-lead PLCC and 32lead TSOP packages. A 600-mi l, 32-pin P DIP package is
also available. See Figures 1, 2, and 3 for pinouts.
Device Operation
The SST Page-Mode EE PROM offers in-circuit electr ical
write capability. The SST29EE/LE/VE020 does not require
separate Erase and Program operations. The internally
timed Write c ycl e executes both erase and p ro gram t ransparently to the user. The SST29EE/LE/VE020 have industry standard optional Software Data Protection, which SST
recommends always to be enabled. The SST29EE/LE/
VE020 are compatible with industry standard EEPROM
pinouts and functionality .
SST29EE020 / SST29LE020 / SST29VE0202 Mb Page-Mode flash memories
Page 2
2
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
Read
The Read operations o f th e SS T 29E E /LE /VE0 20 are controlled by CE# and OE#, both have to be low for the system
to obtain data from the outputs. CE# is used for device
selection. When CE# is high, the chip is deselected and
only standby power is consumed. OE# is the output control
and is used to gate data from the output pins. The data bus
is in high impedance state when either CE# or OE# is high.
Refer to the Read cycle timing diagram for fur ther details
(Figure 4).
Write
The Page-Write to the SST29EE/LE/VE020 should always
use the JEDEC Stan dard So ftware Dat a P rotec ti on (SDP )
three-byte command s equen ce. The SST29 EE/L E/VE 020
contain the opti onal JED EC approved Software Dat a Protection scheme. SST recommends that SDP always be
enabled, thus, the description of the write operations will be
given using the SDP en abled format. The three-byte S DP
Enable and SDP Wr i te c o mma nd s a r e id en tic a l; therefore,
any time a SDP Write command is issued , Software Dat a
Protection is automatically assured. The first time the threebyte SDP command is given, the device becomes SDP
enabled. Subsequent issuance of the same command
bypasses the data protection for the page being written. At
the end of the desired Page-Write, the entire device
remains protec ted. For addi tional de scr iptions, pl ease se e
the applicatio n not es The P r ope r Us e of JE DE C Sta nda r d
Software Data Protection and Protecting Against Uninten-
tional Writes When Using Single Power Supply Flash
Memories.
The Write ope ration consists o f three steps. Ste p 1 is the
three-byte load sequence for Software Data Protection.
Step 2 is the byte-load cycle to a page buffer of the
SST29EE/LE/VE020. Steps 1 and 2 use the same timing
for both operations. Step 3 is an internally controlled Write
cycle for writing the data loaded i n t he pag e buffer into th e
memory array for nonvolatile storage. During both the SDP
three-byte load sequence and the byte-load cycle, the
addresses are lat ched by the falling e dge of e ither CE# or
WE#, whichever occ ur s la st . Th e da ta is latched by the rising edge of either CE# or WE#, whichever occurs first. The
internal Write cycle is initiated by the T
BLCO
timer after the
rising edge o f WE# or CE#, whichever occurs first. The
Write cycle, once initiated, will continue to completion, typically within 5 ms. See Figur es 5 and 6 for WE# and CE#
controlled Page-Wr ite cycle timing diagrams and F igures
15 and 17 for flowcharts.
The Write op eration has three functional cycles : the Software Data Protection loa d sequ ence, the page l oad c ycle,
and the internal Write cycle. The Software Data Protection
consists of a s pec ifi c t hr ee - byte lo ad sequence that allows
writing to the selected page an d will leave the SST29EE/
LE/VE020 protected at the end of the Page-Write. The
page load cycle consists of loading 1 to 128 Bytes of data
into the page buffer. The internal Write cycle consists of the
T
BLCO
time-out and the write timer operation. Dur ing the
Write operation, the only valid reads are Data# Polling and
Toggle Bit.
The Page-Write operation allow s the loading of up to 128
bytes of data into the page buffer of the SST29EE/LE/
VE020 before the initiation of the internal Write cycle. During the internal Write cycle, all the data in the page buffer is
written simultane ously into the me mory array. Hence, the
Page-Write feature of SST29EE/LE/VE020 allow the entire
memory to be written in as little as 10 seconds. During the
internal Wr ite cycle, the host is free t o perform additional
tasks, such as to fetch data from other locations in the system to set up the write to the next page. In each Page-Write
operation, all the bytes that are loaded into the page buffer
must have the same page address, i.e. A
7
through A16. Any
byte not loaded with user data will be written to FFH.
See Figures 5 and 6 for the Page-Write cycle timing dia-
grams. If after the completio n of the three-byte SDP loa d
sequence or the initial byte-load cycle, the host loads a second byte into the page buffer within a byte-load cycle time
(T
BLC
) of 100 µs, the SST29EE/LE/VE020 will stay in the
page load cycle. Additional bytes are then loaded consecutively. The page load cycle will be terminated if no additional byte is loaded into the page buffer within 200 µs
(T
BLCO
) from the last byte-load c ycle, i.e., no subsequent
WE# or CE# hig h-to -lo w t ran siti on after the la st risi ng ed ge
of WE# or CE#. Data in the page buffer can be changed by
a subsequent byte-load cyc le. The page load period can
continue indefin itely, as long as the host co ntinues to load
the device within the byte-load cycle time of 100 µs. The
page to be loaded is d etermined by the page address of
the last byte loaded.
Software Chip-Erase
The SST29EE/LE/VE020 provide a Chip-Erase operation,
which allows the user to simultaneously clear the entire
memory array to the “1” state. This is useful when the entire
device must be quickly erased.
The Software Chip- Erase operation is i nitiated by using a
specific six-byte l oad sequence. After th e load sequence,
the device enters into an internally timed cycle similar to the
Write cycle. During the Erase operation, the only valid read
is Toggle Bit. See T ab le 4 for the load sequence, Figure 10
for timing diagram, and Figure 19 for the flowchart.
Page 3
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
3
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
Write Operation Status Detection
The SST29EE/LE/VE020 provide two software means to
detect the completi on of a W r ite c yc le, in or d er to o pti mi ze
the system Write cycle time. The software detection
includes two status bits: Data# Polling (DQ
7
) and T oggle Bit
(DQ
6
). The end of write detection mode is enabled after the
rising WE# or CE# whichever occurs first, wh ich initiates
the internal Write cycle .
The actual completion of the nonvolatile write is asynchronous with the system ; therefore, either a Data# Polling or
Toggle B it read may be simultaneous with the complet ion
of the Write cycle. If this occurs, the system may possibly
get an erroneous result, i.e., valid data may appear to conflict with either DQ
7
or DQ6. In order to prevent spurious
rejection, if an erroneous result occurs, the software routine
should include a loop to read the accessed location an
additional two (2) times. If bo th reads are valid, then the
device has completed the Write cycle, otherwise the rejection is valid.
Data# Polling (DQ7)
When the SST29EE/LE/VE020 are in the internal Write
cycle, any attempt to read DQ
7
of the last byte loaded during the byte-load cycle wil l receive the complem ent of the
true data. Once the Write cycle is completed, DQ
7
will
show true data. The device is then ready for the next operation. See Figure 7 for Data# Polling timing diagram and Figure 16 for a flowchart.
Toggle Bit (DQ6)
During the internal Write cycle , any consecu tive attemp ts to
read DQ
6
will produce alter nating 0s and 1s, i.e., toggling
between 0 and 1. When the Wr ite c ycle is co mpleted , the
toggling will stop. The device is then ready for the next
operation. See Fig ure 8 for Toggle Bit timing diagram and
Figure 16 for a flowchart. The initial read of the Toggle Bit
will typically be a “1”.
Data Protection
The SST29EE/LE/ VE 02 0 pr ovid e b oth ha r dware an d so ftware features to protect nonvolatile data from inadverten t
writes.
Hardware Data Protection
Noise/Glitch Protection: A WE# or CE# pulse of l ess th an 5
ns will not init iate a Writ e cycle .
V
DD
Power Up/Down Detection: The Write operation is
inhibited when V
DD
is less than 2.5V.
Write Inhibit Mode:
Forcing OE# low, CE# high, or WE#
high will inhibit the W r it e operation. This prevents inadvertent writes during p ow er-u p or po wer- dow n.
Software Data Protection (SDP)
The SST29EE/LE/VE020 provide the JEDEC approved
optional Software Data Protection scheme for all data alteration operations, i.e., Write and Chip-Erase. With this
scheme, any Write operation requires the inclusion of a
series of three byte-load operations to precede the data
loading operation. The three byte-load sequence is used to
initiate the Write cycle, providing optimal protection from
inadvertent write operations, e.g., during the system powerup or power-down. The SST29 EE/LE/VE020 are shippe d
with the Software Data Protection disabled.
The software protection s cheme can be enabled by applying a three-byte sequenc e to the device, during a pageload cycle (Figures 5 and 6). The device will then be automatically set into the data protect mode. Any subsequent
Write operation will require the preceding three-byte
sequence. See Table 4 for the specific software comm an d
codes and Figures 5 and 6 for the timin g diagrams. To set
the device into the unprotected mode, a six-byte sequence
is required. See Table 4 for the specific codes and Figure 9
for the timing diagram. If a write is attempte d while SDP is
enabled the device will be in a non-accessible state for
~300 µs. SST recommends Software Data Protection
always be enabled. See Figure 17 for flowcharts.
The SST29EE/LE/VE020 Software Data Protection is a
global command, protecting all pages in the entire memory
array once enabled (or disabled). Therefore using SDP for
a single Page-Write will enable SDP for the entire array.
Single pages by themse lves cannot be SDP ena bl ed or
disabled.
Single power supply reprogrammable nonvolatile memories may be unintentionally altered. SST strongly recommends that Software Data Protection (SDP) always be
enabled. The SST29EE/LE/VE020 should be programmed
using the SDP command sequence. SST recommends the
SDP Disable Command Seq uence not be issued to the
device prior to w riting.
Please refer to the following Application Notes for more
informati on on using SDP:
• Protecting Against Unintentional Writes When
Using Single Power Supply Flash Memories
• The Proper Use of JEDEC Standard Software
Data Protection
Page 4
4
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
Product Identification
The product id enti fic ati on mode ident ifi es the de vi ce as the
SST29EE/LE/VE020 and manufacturer as SST. This mode
is accessed via so ftware. For details, see Table 4, Figur e
11 for the software ID entr y and r ead timing diagram, an d
Figure 18 for the ID entry command sequence flowchart.
Product Identification Mode Exit
In order to retur n to the sta nda rd r ead mod e, the So ftware
Product Identification mode must be exited. Exiting is
accomplished b y issuing the Softw are ID Exit (reset) oper ation, which ret urns the device to the Re ad operation. Th e
Reset operation may also be used to reset the device to the
Read mode after an inadvertent transient condition that
apparently causes the device to behave abnorma lly, e.g.,
not read correctly. See Table 4 for software command
codes, Figure 12 for timing waveform, and Figu re 18 for a
flowchart.
FIGURE 1: P
IN ASSIGNMENTS FOR 32-LEAD PLCC
TABLE 1: P
RODUCT IDENTIFICATION
Address Data
Manufacturer’s ID 0000H BFH
Device ID
SST29EE020 0001H 10H
SST29LE020 0001H 12H
SST29VE020 0001H 12H
T1.3 307
Y-Decoder and Page Latches
I/O Buffers and Data Latches
307 ILL B1.1
Address Buffer & Latches
X-Decoder
DQ7 - DQ
0
A17 - A
0
WE#
OE#
CE#
SuperFlash
Memory
Control Logic
FUNCTIONAL BLOCK DIAGRAM
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
4 3 2 1 32 31 30
A12
A15
A16NCVDDWE#
A17
32-lead PLCC
T op Vie w
307 ILL F02.3
14 15 16 17 18 19 20
DQ1
DQ2
V
SS
DQ3
DQ4
DQ5
DQ6
Page 5
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
5
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
FIGURE 2: PIN ASSIGNMENTS FOR 32-LEAD TSOP
FIGURE 3: P
IN ASSIGNMENTS FOR 32-PIN PDIP
A11
A9
A8
A13
A14
A17
WE#
V
DD
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
V
SS
DQ2
DQ1
DQ0
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
307 ILL F01.2
Standard Pinout
T op Vie w
Die Up
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-pin
PDIP
T op Vie w
307 ILL F19.0
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
V
SS
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
DD
WE#
A17
A14
A13
A8
A9
A11
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
TABLE 2: PIN DESCRIPTION
Symbol Pin Name Functions
A17-A
7
Row Address Inputs To provide memory addresses. Row addresses define a page for a Write cycle.
A6-A
0
Column Address Inputs Column Addresses are toggled to load page data
DQ
7
-DQ0Data Input/output To output data du ring Read cycles and receive input data during Wri te cycles.
Data is internally latched during a Write cycle.
The outputs are in tri-state when OE# or CE# is high.
CE# Chip Enable To activate the device when CE# is low.
OE# Output Enable To gate the data output buffers.
WE# Write Enable To control the Write operations.
V
DD
Power Supply To provide: 5.0V supply (±10%) for SST29EE020
3.0V supply (3.0-3.6V) for SST29LE020
2.7V supply (2.7-3.6V) for SST29VE020
V
SS
Ground
NC No Connection Unconnected pins.
T2.2 307
Page 6
6
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
TABLE 3: OPERATION MODES SELECTION
Mode CE# OE# WE# DQ Address
Read V
IL
V
IL
VIHD
OUT
A
IN
Page-Write V
IL
V
IH
VILD
IN
A
IN
Standby V
IH
X
1
XHigh Z X
Write Inhibit X V
IL
XHigh Z/ D
OUT
X
XXV
IH
High Z/ D
OUT
X
Software Chip-Erase V
IL
V
IH
VILD
IN
A
IN,
See Table 4
Product Identification
Software Mode V
IL
V
IH
VILManufacturer’s ID (BFH)
Device ID
2
See Table 4
SDP Enable Mode V
IL
V
IH
V
IL
See Table 4
SDP Disable Mode V
IL
V
IH
V
IL
See Table 4
T3.3 307
1. X can be VIL or VIH, but no other value
2. Device ID = 10H for SST29EE020 and 12H for SST29LE/VE020
TABLE 4: SOFTWARE COMMAND SEQUENCE
Command
Sequence
1st Bus
Write Cycle
2nd Bus
Write Cycle
3rd Bus
Write Cycle
4th Bus
Write Cycle
5th Bus
Write Cycle
6th Bus
Write Cycle
Addr
1
1. Address format A14-A0 (Hex), Addres s A15 can be VIL or VIH, but no other value.
Data Addr1Data Addr1Data Addr1Data Addr1Data Addr1Data
Software
Data Protect Enable
& Page-Write
5555H AAH 2AAAH 55H 5555H A0H Addr
2
2. Page-Write consists of loading up to 128 Bytes (A6-A0)
Data
Software
Data Protect Disable
5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 20H
Software Chip-Erase
3
3. The software Chip-Erase function is not supported by the industrial temperature part.
Please contact SST if you require this function for an industrial temperature part.
5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 10H
Software ID Entry
4,5
4. The device does not remain in Software Product ID Mode if powered down.
5. With A
14-A1
=0; SST Manufacturer’s ID= BFH, is read with A0 = 0,
SST29EE020 Device ID = 10H, is read with A
0
= 1
SST29LE/VE020 Device ID = 12H, is read with A
0
= 1
5555H AAH 2AAAH 55H 5555H 90H
Software ID Exit 5555H AAH 2AAAH 55H 5555H F0H
Alternate
Software ID Entry
6
6. Alternate six-byte Software Product ID Command Code
Note: This product supports both the JEDEC standard three-byte command code sequence and SST’s original six-byte command code
sequence. For new designs, SST recommends that the three-byte command code sequence be used.
5555H AAH 2AAAH 55H 5555H 80H 5555H AAH 2AAAH 55H 5555H 60H
T4.2 307
Page 7
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
7
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause pe r manent dama ge to the device. This is a stres s rating only and funct ional operatio n
of the device at these conditions or conditions greater tha n those defined in the ope rational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to V
DD
+ 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . .-1.0V to V
DD
+ 1.0V
Voltage on A
9
Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 14.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Through Hold Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circ uit Curr ent
1
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
1. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE FOR SST29E E020
Range Ambient Temp V
DD
Commercial 0°C to +70°C5.0V±10%
Industrial -40°C to +85°C5.0V±10%
OPERATING RANGE FOR SST29L E02 0
Range Ambient Temp V
DD
Commercial 0°C to +70°C 3.0-3.6V
Industrial -40°C to +85°C 3.0-3.6V
OPERATING RANGE FOR SST29V E020
Range Ambient Temp V
DD
Commercial 0°C to +70°C 2.7-3.6V
Industrial -40°C to +85°C 2.7-3.6V
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . 10 ns
Output Load . . . . . . . . . . . . . . . . . . . . . 1 TTL Gate and CL = 100 pF
See Figures 13 and 14
Page 8
8
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
TABLE 5: DC OPERATING CHARACTERISTICS VDD = 5.0V±10% FOR SST 29E E020
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DD
Power Supply Current Address input=VIL/VIH, at f=1/TRC Min,
V
DD=VDD
Max
Read 30 mA CE#=OE#=V
IL
, WE#=VIH, all I/Os open
Write 50 mA CE#=WE#=V
IL
, OE#=VIH, VDD=VDD Max
I
SB1
Standby VDD Current
(TTL input)
3 mA CE#=OE#=WE#=VIH, VDD=VDD Max
I
SB2
Standby VDD Current
(CMOS input)
50 µA CE#=OE#=WE#=VDD-0.3V, VDD=VDD Max
I
LI
Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max
I
LO
Output Leakage Current 10 µA V
OUT
=GND to VDD, VDD=VDD Max
V
IL
Input Low Voltage 0.8 V VDD=VDD Min
V
IH
Input High Voltage 2 .0 V VDD=VDD Max
V
OL
Output Low Voltage 0.4 V IOL=2.1 mA, VDD=VDD Min
V
OH
Output High Voltage 2.4 V IOH=-400 µA, VDD=VDD Min
T5.2 307
TABLE 6: DC OPERATING CHARACTERISTICS VDD = 3.0-3.6V FOR SST29LE020 AND 2.7-3.0V FOR SST29VE020
Symbol Parameter
Limits
Test ConditionsMin Max Units
I
DD
Power Supply Current Address input=VIL/VIH, at f=1/TRC Min,
V
DD=VDD
Max
Read 12 mA CE#=OE#=V
IL
, WE#=VIH, all I/Os open
Write 15 mA CE#=WE#=V
IL
, OE#=VIH, VDD=VDD Max
I
SB1
Standby VDD Current
(TTL input)
1 mA CE#=OE#=WE#=VIH, VDD=VDD Max
I
SB2
Standby VDD Current
(CMOS input)
15 µA CE#=OE#=WE#=VDD-0.3V, VDD=VDD Max
I
LI
Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max
I
LO
Output Leakage Current 10 µA V
OUT
=GND to VDD, VDD=VDD Max
V
IL
Input Low Voltage 0.8 V VDD=VDD Min
V
IH
Input High Voltage 2 .0 V VDD=VDD Max
V
OL
Output Low Voltage 0.4 V IOL=100 µA, VDD=VDD Min
V
OH
Output High Voltage 2.4 V IOH=-100 µA, VDD=VDD Min
T6.2 307
Page 9
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
9
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
TABLE 7: RECOMMENDED SYSTE M POWER-UP TIMINGS
Symbol Parameter Minimum Units
T
PU-READ
1
Power-up to Read Operation 100 µs
T
PU-WRITE
1
Power-up to Write Operation 5 ms
T7.1 307
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter Description Test Condition Maximum
C
I/O
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
I/O Pin Capacitance V
I/O
= 0V 12 pF
C
IN
1
Input Capacitance VIN = 0V 6 pF
T8.0 307
TABLE 9: RELIABILITY CHARACTERISTICS
Symbol Parameter Minimum Specification Units Test Method
N
END
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Endurance 10,000 Cycles JEDEC Standard A117
T
DR
1
Data Retention 100 Years JEDEC Standard A103
I
LTH
1
Latch Up 100 mA JEDEC Standard 78
T9.5 307
Page 10
10
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
AC CHARACTERISTICS
TABLE 10: READ CYCLE TIMING PARAMETERS FOR SST29EE020
Symbol Parameter
SST29EE020-120 SST29EE020-150
UnitsMin Max Min Max
T
RC
Read Cycle Time 120 150 ns
T
CE
Chip Enable Access Time 120 150 ns
T
AA
Address Access Time 120 150 ns
T
OE
Output Enable Access Time 50 60 ns
T
CLZ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
CE# Low to Active Output 0 0 ns
T
OLZ
1
OE# Low to Active Output 0 0 ns
T
CHZ
1
CE# High to Hi gh-Z Output 30 30 ns
T
OHZ
1
OE# High to High-Z Output 30 30 ns
T
OH
1
Output Hold from Address Change 0 0 ns
T10.4 307
TABLE 11: READ CYCLE TIMING PARAMETERS FOR SST29LE020
Symbol Parameter
SST29LE020-200 SST29LE020-250
UnitsMinMaxMinMax
T
RC
Read Cycle Time 200 250 ns
T
CE
Chip Enable Access Time 200 250 ns
T
AA
Address Access Time 200 250 ns
T
OE
Output Enable Access Time 100 120 ns
T
CLZ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
CE# Low to Active Output 0 0 ns
T
OLZ
1
OE# Low to Active Output 0 0 ns
T
CHZ
1
CE# High to High-Z Output 50 50 ns
T
OHZ
1
OE# High to High-Z Output 50 50 ns
T
OH
1
Output Hold from Address Change 0 0 ns
T11.1 307
TABLE 12: READ CYCLE TIMING PARAMETERS FOR SST29VE020
Symbol Parameter
SST29VE020-200 SST29VE020-250
UnitsMinMaxMinMax
T
RC
Read Cycle Time 200 250 ns
T
CE
Chip Enable Access Time 200 250 ns
T
AA
Address Access Time 200 250 ns
T
OE
Output Enable Access Time 100 120 ns
T
CLZ
1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
CE# Low to Active Output 0 0 ns
T
OLZ
1
OE# Low to Active Output 0 0 ns
T
CHZ
1
CE# High to High-Z Output 50 50 ns
T
OHZ
1
OE# High to High-Z Output 50 50 ns
T
OH
1
Output Hold from Address Change 0 0 ns
T12.1 307
Page 11
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
11
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
TABLE 13: PAGE-WRITE CYCLE TIMING PARAMETERS
Symbol Parameter
SST29EE020 SST29LE/VE020
UnitsMin Max Min Max
T
WC
Write Cycle (Erase and Program) 10 10 ms
T
AS
Address Setup Time 0 0 ns
T
AH
Address Hold Time 50 70 ns
T
CS
WE# and CE# Setup Time 0 0 ns
T
CH
WE# and CE# Hold Time 0 0 ns
T
OES
OE# High Setup Time 0 0 ns
T
OEH
OE# High Hold Time 0 0 ns
T
CP
CE# Pulse Width 70 120 ns
T
WP
WE# Pulse Width 70 120 ns
T
DS
Data Setup Time 35 50 ns
T
DH
1
Data Hold Time 0 0 ns
T
BLC
1
Byte Load Cycle Time 0.05 100 0.05 100 µs
T
BLCO
1
Byte Load Cycle Time 200 200 µs
T
IDA
1
Software ID Access and Exit Time 10 10 µs
T
SCE
Software Chip-Erase 20 20 ms
T13.5307
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
Page 12
12
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
FIGURE 4: READ CYCLE TIMING DIAGRAM
FIGURE 5: WE# CONTROLLED PAGE-WRITE CYCLE TIMING DIAGRAM
307 ILL F03.0
CE#
ADDRESS A
17-0
OE#
WE#
DQ
7-0
V
IH
T
CLZ
T
OH
DATA VALID
DATA VALID
T
OLZ
T
OE
HIGH-Z HIGH-Z
T
CE
T
CHZ
T
OHZ
T
RC
T
AA
307 ILL F04.1
CE#
OE#
WE#
ADDRESS A
17-0
DQ
7-0
SW0
AA 55 A0
DATA VALID
SW1 SW2
BYTE 0 BYTE 1 BYTE 127
T
DS
T
DH
T
BLC
T
BLCO
T
WC
T
WP
T
OEH
T
OES
T
CH
T
CS
T
AH
T
AS
5555
Three-Byte Sequence for
Enabling SDP
2AAA 5555
Page 13
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
13
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
FIGURE 6: CE# CONTROLLED PAGE-WRITE CYCLE TIMING DIAGRAM
FIGURE 7: DATA# POLLING TIMING DIAGRAM
307 ILL F05.1
CE#
OE#
WE#
ADDRESS A
17-0
DQ
7-0
SW0
AA 55 A0
DATA VALID
SW1 SW2
BYTE 0 BYTE 1 BYTE 127
T
DS
T
DH
T
BLC
T
BLCO
T
WC
T
CP
T
OEH
T
OES
T
CH
T
CS
T
AH
T
AS
5555
Three-Byte Sequence for
Enabling SDP
2AAA 5555
307 ILL F06.0
CE#
OE#
WE#
TWC + T
BLCO
D#
T
OE
T
OEH
T
CE
T
OES
D#
D
ADDRESS A
17-0
DQ
7
D
Page 14
14
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
FIGURE 8: TOGGLE BIT TIMING DIAGRAM
FIGURE 9: SOFTWARE DATA PROTECT DISABLE TIMING DIAGRAM
307 ILL F07.1
CE#
OE#
WE#
TWC + T
BLCO
TWO READ CYCLES
WITH SAME OUTPUTS
T
OEH
T
OE
T
OES
T
CE
ADDRESS A
17-0
DQ
6
307 ILL F08.1
CE#
OE#
WE#
ADDRESS A
14-0
DQ
7-0
SW0 SW1 SW2 SW3 SW4 SW5
T
BLCO
T
BLC
T
WC
T
WP
55555555
55AA 55 20AA80
Six-Byte Sequence for Disabling
Software Data Protection
2AAA2AAA 55555555
Page 15
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
15
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
FIGURE 10: SOFTWARE CHIP-ERASE TIMING DIAGRAM
FIGURE 11: SOFTWARE ID ENTRY AND READ
307 ILL F09.2
CE#
OE#
WE#
ADDRESS A
14-0
DQ
7-0
SW0 SW1 SW2 SW3 SW4 SW5
T
BLCO
T
BLC
T
SCE
T
WP
55555555
55AA 55 10AA80
Six-Byte Code for Software Chip-Erase
2AAA2AAA 55555555
307 ILL F10.2
CE#
OE#
WE#
ADDRESS A
14-0
DQ
7-0
SW0 SW1 SW2
DEVICE ID = 10H for SST29EE020
= 12H for SST29LE020/29VE020
T
IDA
T
AA
T
BLC
T
WP
5555
55AA BF
DEVICE ID
90
Three-Byte Sequence
for Software ID Entry
00002AAA 00015555
Page 16
16
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
FIGURE 12: SOFTWARE ID EXIT AND RESET
307 ILL F11.0
CE#
OE#
WE#
ADDRESS A
14-0
DQ
7-0
SW0 SW1 SW2
T
IDA
T
BLC
T
WP
5555
55AA F0
Three-Byte Sequence
for Software ID Exit and Reset
2AAA5555
Page 17
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
17
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
FIGURE 13: AC INPUT/OUTPUT REFERENCE WAVEFORMS
FIGURE 14: A TEST LOAD EXAMPLE
307 ILL F12.1
REFERENCE POINTS OUTPUTINPUT
V
HT
V
LT
V
HT
V
LT
V
IHT
V
ILT
AC test inputs are driven at V
IHT
(2.4 V) for a logic “1” and V
IL T
(0.4 V) for a logic “0”. Measurement reference point s for
inputs and outputs are V
HT
(2.0 V) and VLT (0.8 V). Input rise and fall times (10% ↔ 90%) are <10 ns.
Note: V
HT
- V
HIGH
Test
V
LT
- V
LOW
Test
V
IHT
- V
INPUT
HIGH Test
V
ILT
- V
INPUT
LOW Test
307 ILL F13.1
TEST LOAD EXAMPLE
TO TESTER
TO DUT
C
L
R
L LOW
RL
HIGH
V
DD
Page 18
18
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
FIGURE 15: WRITE ALGORITHM
307 ILL F14.1
No
Load Byte
Data
Yes
Byte
Address =
128?
Write
Completed
Increment
Byte Address
By 1
Wait T
BLCO
Wait for end of
Write (TWC,
Data# Polling bit
or Toggle bit
operation)
Set Byte
Address = 0
Set Page
Address
Software Data
Protect Write
Command
Start
See Figure 17
Page 19
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
19
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
FIGURE 16: WAIT OPTIONS
307 ILL F15.1
No
No
Read a byte
from page
Yes
Yes
Does DQ
6
match?
Write
Completed
Read same
byte
Page-Write
Initiated
Toggle Bit
Wait TWC
Write
Completed
Page-Write
Initiated
Internal Timer
Read DQ
7
(Data for last
byte loaded)
Is DQ7 =
true data?
Write
Completed
Page-Write
Initiated
Data# Polling
Page 20
20
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
FIGURE 17: SOFTWARE DATA PROTECTION FLOWCHARTS
307 ILL F16.1
Write data: AAH
Address: 5555H
Software Data Protect Enable
Command Sequence
Write data: 55H
Address: 2AAAH
Write data: A0H
Address: 5555H
Wait T
WC
Wait T
BLCO
SDP Enabled
Load 0 to
128 Bytes of
page data
Optional Page Load
Operation
Write data: AAH
Address: 5555H
Software Data Protect
Disable Command Sequence
Write data: 55H
Address: 2AAAH
Write data: 80H
Address: 5555H
Write data: AAH
Address: 5555H
Wait T
WC
Wait T
BLCO
SDP Disabled
Write data: 55H
Address: 2AAAH
Write data: 20H
Address: 5555H
Page 21
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
21
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
FIGURE 18: SOFTWARE PRODUCT COMMAND FLOWCHARTS
307 ILL F17.1
Write data: AAH
Address: 5555H
Software Product ID Entry
Command Sequence
Write data: 55H
Address: 2AAAH
Pause 10 µs
Write data: 90H
Address: 5555H
Read Software ID
Write data: AAH
Address: 5555H
Software Product ID Exit &
Reset Command Sequence
Write data: 55H
Address: 2AAAH
Pause 10 µs
Write data: F0H
Address: 5555H
Return to normal
operation
Page 22
22
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
FIGURE 19: SOFTWARE CHIP-ERASE COMMAND CODES
307 ILL F18.2
Write data: AAH
Address: 5555H
Software Chip-Erase
Command Sequence
Write data: 55H
Address: 2AAAH
Write data: AAH
Address: 5555H
Write data: 55H
Address: 2AAAH
Write data: 10H
Address: 5555H
Wait T
SCE
Chip-Erase
to FFH
Write data: 80H
Address: 5555H
Page 23
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
23
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
PRODUCT ORDERING INFORMATION
Device Speed Suffix1 Suffix2
SST29x
E020 - XXX -XX -XX
Package Modifie r
H = 32 leads or pins
Numeric = Die modifier
Package Type
N = PLCC
W = TSOP (die up) (8mm x 14mm)
E = TSOP (die up) (8mm x 20mm)
P = PDIP
U = Unencapsulated die
Temperature Range
C = Commercial = 0°C to +70°C
I = Industrial = -40°C to +85°C
Minimum Endurance
4 = 10,000 cycles
Read Access Speed
250 = 250 ns
200 = 200 ns
150 = 150 ns
120 = 120 ns
Voltage
E = 5.0V-only
L = 3.0-3.6V
V = 2.7-3.6V
Page 24
24
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
Valid combinations for SST29EE020
SST29EE020-120-4C-NH SST29EE020-120-4C-WH SST29EE020-120-4C-EH SST29EE020-120-4C-PH
SST29EE020-120-4I-NH SST29EE020-120-4I-WH SST29EE020-120-4I-EH
SST29EE020-150-4C-U2
Valid combinations for SST29LE020
SST29LE020-200-4C-NH SST29LE020-200-4C-WH SST29LE020-200-4C-EH
SST29LE020-200-4I-NH SST29LE020-200-4I-WH SST29LE020-200-4I-EH
SST29LE020-250-4C-U2
Valid combinations for SST29VE020
SST29VE020-200-4C-NH SST29VE020-200-4C-WH SST29VE020-200-4C-EH
SST29VE020-200-4I-NH SST29VE020-200-4I-WH SST29VE020-200-4I-EH
SST29VE020-250-4C-U2
Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales
representative to confirm availability of valid combinations and to determine availability of new combinations.
Note: The software Chip-Erase function is not supported by the industrial temperature part.
Please contact SST, if you require this function for an industrial temperature part.
Page 25
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
25
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
PACKAGING DIAGRAMS
32-LEAD PLASTI C LEAD CHIP CARRIER (PLCC)
SST P
ACKAGE CODE: NH
32-
LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 8MM X 14MM
SST PACKAGE CODE: WH
.030
.040
.013
.021
.490
.530
.075
.095
.015 Min.
.125
.140
TOP VIEW SIDE VIEW BOTT OM VIEW
1232
.026
.032
.400
BSC
32.PLCC.NH-ILL.2
Note: 1. Complies with JEDEC publication 95 MS-016 AE dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in inches (min/max).
3. Dimensions do not include mold flash. Maximum allowable mold flash is .008 inches.
4. Coplanarity: 4 mils.
.050
BSC.
.050
BSC.
.026
.032
.023
.029
.447
.453
.042
.048
.042
.048
Optional
Pin #1 Identifier
.547
.553
.585
.595
.485
.495
.020 R.
MAX.
.106
.112
R.
x 30˚
32.TSOP-WH-ILL.4
Note: 1. Complies with JEDEC publication 95 MO-142 BA dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in millimeters (min/max).
3. Coplanarity: 0.1 (±.05) mm.
4. Maximum allowable mold flash is 0.15mm at the package ends, and 0.25mm between leads.
8.10
7.90
.270
.170
1.05
0.95
.50
BSC
0.15
0.05
12.50
12.30
Pin # 1 Identifier
14.20
13.80
0.70
0.50
Page 26
26
Data Sheet
2 Mbit Page-Mode EEPROM
SST29EE020 / SST29LE020 / SST29VE020
©2001 Silicon Storage Technology, Inc. S71062-06-000 6/01 307
32-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 8MM X 20MM
SST PACKAGE CODE: EH
32-
PIN PLASTIC DUAL-IN-LINE PACKAGE (PDIP)
SST P
ACKAGE CODE: PH
32.TSOP-EH-ILL.4
Note: 1. Complies with JEDEC publication 95 MO-142 BD dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in millimeters (min/max).
3. Coplanarity: 0.1 (±.05) mm.
4. Maximum allowable mold flash is 0.15mm at the package ends, and 0.25mm between leads.
8.10
7.90
.27
.17
1.05
0.95
.50
BSC
0.15
0.05
18.50
18.30
20.20
19.80
0.70
0.50
Pin # 1 Identifier
32.pdipPH-ILL.2
Pin #1 Identifier
C
L
32
1
Base Plane
Seating Plane
Note: 1. Complies with JEDEC publication 95 MO-015 AP dimensions, although some dimensions may be more stringent.
2. All linear dimensions are in inches (min/max).
3. Dimensions do not include mold flash. Maximum allowable mold flash is .010 inches.
.170
.200
7˚
4 PLCS.
.600 BSC
.100 BSC
.120
.150
.016
.022
.045
.065
.070
.080
.015
.050
.065
.075
1.645
1.655
.008
.012
0˚
15˚
.600
.625
.530
.550
Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-90 36
www.SuperFlash.com or www.ssti.com
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