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SST2605
Elektronische Bauelemente
-4.0A, -30V,RDS(ON) 80m
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Drain-Source Leakage Current (Tj=55
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
2
o
Symbol
BVDSS
BVDS/ Tj
VGS(th)
IGSS
o
C
o
)
C
2
IDSS
RDS(ON)
Qg
Qgs
Qgd
Td(ON)
Tr
(Off)
Td
T
f
Ciss
Coss
Crss
Min.
-30
_
-1.0
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
Typ.
_
-0.02
_
_
_
_
_
_
5.5
1
2.6
7
6
18
4
400
90
30
Max.
-3.0
±
_
_
100
-1
-25
80
120
8.8
_
_
_
_
_
_
640
_
_
Unit
V
o
V/
V
nA
uA
uA
Ω
m
nC
nS
pF
Ω
Test Condition
VGS=0V, ID=-250uA
Reference to 25 ,ID=-1mA
C
VDS=VGS, ID=-250uA
±
VGS= 20V
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VGS=-10V, ID=-4.0A
VGS=-4.5V, ID=-3.0A
ID=-4.0A
VDS=-24V
VGS=-4.5V
5V
VDD=-1
ID=-1A
VGS=-10V
Ω
RG=3.3
Ω
RD=15
VGS=0V
VDS=-25V
f=1.0MHz
o
C
Forward Transconductance
Gfs
_
_
S6
VDS=-5V, ID=-4.0A
Source-Drain Diode
Parameter Symbol Max.
Forward On Voltage VDS
Reverse Recovery Time
Reverse Recovery Charge
2
2
Trr
Qrr
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 in2 copper pad of FR4 board; 156OC/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
15-Jun-2010 Rev. C
_
_ _
_
Typ.
Test ConditionMin. Unit
_
-1.2
21
14
_
V
nS
Is=-4.0A, VGS=0V
dl/dt=100A/us
nC
IS=-1.6A, VGS=0V.
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SST2605
Elektronische Bauelemente
Characteristics Curve
Fig 1. Typical Output Characteristics
-4.0A -30V,RDS(ON) 80m
P-Channel Enhancement Mode Power Mos.FET
Fig 2. Typical Output Characteristics
Ω
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
15-Jun-2010 Rev. C
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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Page 4
SST2605
-4.0A, -30V,RDS(ON) 80m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual
15-Jun-2010 Rev. C
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