Datasheet SST12LP17E Datasheet

PROPRIETARY AND

CONFIDENTIAL

A

Microchip Technology Company

SST12LP17E is a 2.4 GHz high-efficiency, fully-matched power amplifier module
based on the highly-reliable InGaP/GaAs HBT technology. It is designed in compli­ance with IEEE 802.11b/g/n applications and typically provides 28 dB gain with 28%
power-added efficiency at 21dBm. SST12LP17E has excellent linearity, providing
3% EVM at typically 18 dBm, while meeting 802.11g spectrum mask at 21.5 dBm.
This power amplifier requires no external RF matching, and only requires one exter­nal DC-bias capacitor to meet the specified performance. It offers high-speed
power-up/-down control through a single reference voltage pin and includes a tem­perature-stable, VSWR insensitive power detector voltage output. SST12LP17E is
offered in a super-thin (0.4mm maximum) 8-contact X2SON package and a 8-con­tact USON package.

Features

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

SST12LP17E

Data Sheet

• Input/Output ports internally matched to 50 and
DC decoupled

• High gain:

– Typically 28 dB gain across 2.4–2.5 GHz

• High linear output power:

– >24 dBm P1dB

- Single-tone measurement. Please refer to “Absolute
Maximum Stress Ratings” on page 5

– Meets 802.11g OFDM ACPR requirement up to 21.5

dBm

– ~3% added EVM up to 18 dBm for 54 Mbps 802.11g

signal

– Meets 802.11b ACPR requirement up to 22 dBm

• High power-added efficiency/Low operating cur­rent for both 802.11b/g/n applications

– ~28%/138 mA @ P
– ~33%/155 mA @ P

• Single-pin low I

–I

<2 mA

REF

• Low idle current

– ~60 mA I

• High-speed power-up/down

– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/down delay with driver delay included

<200 ns

REF

CQ

= 21.5 dBm for 802.11g

OUT

= 22.5 dBm for 802.11b

OUT

power-up/down control

• Low shut-down current (~2 µA)

• Stable performance over temperature

– ~2 dB gain variation between -40°C to +85°C
– ~1 dB power variation between -40°C to +85°C

• Excellent on-chip power detection

– >15 dB dynamic range, dB-wise linear
– VSWR insensitive, temperature stable

• Packages available

– 8-contact X2SON – 2mm x 2mm x 0.4mm
– 8-contact USON – 2mm x 2mm x 0.6mm

• Non-Pb (lead-free), RoHS compliant, and Halogen free

Applications

• WLAN (IEEE 802.11b/g/n)

• Home RF

• Cordless phones

• 2.4 GHz ISM wireless equipment

©2012 Silicon StorageTechnology, Inc. DS-75004E 07/12

www.microchip.com

PROPRIETARY AND

CONFIDENTIAL

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

A

Microchip Technology Company

Product Description

The SST12LP17E is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech­nology.The input/output RF ports are fully matched to 50 internally. These RF ports are DC decoupled and
require no DC-blocking capacitors or matching components. This helps reduce the system board’s Bill of Materi­als (BOM) cost.

The SST12LP17E is a 2.4 GHz fully-integrated, high-efficiency Power Amplifier module designed in
compliance with IEEE 802.11b/g/n applications. It typically provides 28 dB gain with 28% power-added
efficiency (PAE) @ POUT = 21.5 dBm for 802.11g and 33% PAE @ POUT = 22 dBm for 802.11b.

The SST12LP17E has excellent linearity, typically ~3% added EVM at 18 dBm output power which is essential
for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 21.5 dBm and 802.11b spectrum
mask at 22.5 dBm.

The SST12LP17E also features easy board-level usage along with high-speed power-up/down control through
a singlecombinedreferencevoltagepin.Ultra-lowreferencecurrent(totalI
controllable by an on/off switching signal directly from the baseband chip. These features, coupled with low
operating current, make the SST12LP17E ideal for the final stage power amplification in battery-powered

802.11b/g/n WLAN transmitter applications.
The SST12LP17E has an excellent on-chip, single-ended power detector, which features wide dynamic-range,

>15dB,withdB-wiselinearperformance. The excellent on-chip power detector provides a reliable solution
to board-level power control.

SST12LP17E

Data Sheet

~2 mA)makestheSST12LP17E

REF

The SST12LP17E is offered in both 8-contact X2SON and 8-contact USON packages. See Figure 2 for pin
assignments and Table 1 for pin descriptions.

©2012 Silicon Storage Technology, Inc. DS-75004E 07/12

2

PROPRIETARY AND

CONFIDENTIAL

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

A

Microchip Technology Company

Functional Blocks

VCC2

VCC1

RFIN

VREF

SST12LP17E

Data Sheet

1

2

3

4

Bias Circuit

8

DNU

7

DNU

6

RFOUT

DET

5

Figure 1: Functional Block Diagram

1426 F1.0

©2012 Silicon Storage Technology, Inc. DS-75004E 07/12

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PROPRIETARY AND

CONFIDENTIAL

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

A

Microchip Technology Company

Pin Assignments

VCC2

VCC1

RFIN

VREF

SST12LP17E

Data Sheet

1

Top View

2

3

4

(Contacts

facing down)

RF & DC

Ground

0

8

7

6

5

1426 F2.0

DNU

DNU

RFOUT

DET

Figure 2: Pin Assignments for 8-contact X2SON and 8-contact USON

Pin Descriptions

Table 1: Pin Description

Symbol Pin No. Pin Name Type

GND 0 Ground Low inductance ground pad
VCC2 1 Power Supply PWR Power supply, 2
VCC1 2 Power Supply PWR Power supply, 1
RFIN 3 I RF input, DC decoupled
VREF 4 PWR 1
DET 5 O On-chip power detector
RFOUT 6 O RF output, DC decoupled
DNU 7 Do Not Use Do not use or connect
DNU 8 Do Not Use Do not use or connect

1. I=Input, O=Output

1

Function

nd

stage

st

stage

st

and 2ndstage idle current control

T1.0 75004

©2012 Silicon Storage Technology, Inc. DS-75004E 07/12

4

PROPRIETARY AND

CONFIDENTIAL

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

A

Microchip Technology Company

Electrical Specifications

The DC and RF specifications for the power amplifier are specified below. Refer to Table 3 for the DC voltage
and current specifications. Refer to Figures 3 through 8 for the RF performance.

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute
Maximum Stress Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these conditions or conditions greater than those defined in the
operational sections of this data sheet is not implied. Exposure beyond absolute maximum stress rat­ing conditions may affect device reliability.)

Input power to pin 3 (PIN).....................................................+5dBm

Average output power from Pin 6 (P

Supply Voltage at pins 1 and 2 (VCC)2......................................-0.3V to +6.0V

Reference voltage to pin 4 (V

DC supply current (ICC)3.....................................................300mA

Operating Temperature (TA)............................................ -40ºC to +85ºC

Storage Temperature (T

Maximum Junction Temperature (TJ) ........................................... +150ºC

Surface Mount Solder Reflow Temperature ...........................260°C for 10 seconds

1. Never measure with CW source. Pulsed single-tone source with <50% duty cycle is recommended. Exceeding the max­imum rating of average output power could cause permanent damage to the device.

2. VCCmaximum rating of 6.0V for RF output power levels up to 10 dBm.

3. Measured with 100% duty cycle 54 Mbps 802.11g OFDM Signal

SST12LP17E

Data Sheet

)1......................................+25.5 dBm

OUT

).........................................-0.3V to +3.3V

REF

)........................................... -40ºC to +120ºC

STG

Table 2: Operating Range

Range Ambient Temp V

Industrial -40°C to +85°C 3.0V to 4.6V

Table 3: DC Electrical Characteristics at 25°C

Symbol Parameter Min. Typ Max. Unit

V
I

V
I

CC

CQ

REG

CC

Supply Voltage at pins 1 and 2 3.0 3.3 4.6 V
Idle current to meet EVM ~3% @ 18 dBm Output Power, 802.11g OFDM

54 Mbps signal
Reference Voltage for pin 4 2.9 V
Current consumption to meet 802.11g OFDM 54 Mbps spectrum mask

@ 21.5 dBm
Current consumption to meet 802.11b DSSS 54 Mbps spectrum mask

@ 22 dBm
Current consumption to meet EVM ~3% @ 18 dBm Output Power with

802.11g OFDM 54 Mbps signal

CC

T2.1 75004

60 mA

138 mA

155 mA

105 mA

T3.1 75004

©2012 Silicon Storage Technology, Inc. DS-75004E 07/12

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PROPRIETARY AND

CONFIDENTIAL

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

A

Microchip Technology Company

Table 4: RF Characteristics at 25°C

Symbol Parameter Min. Typ Max. Unit

F
G Small signal gain 27 28 dB
G
G
2f, 3f, 4f, 5f Harmonics at 23 dBm, without external filters -40 dBc
EVM Added EVM @ 18 dBm output with 802.11g OFDM

P

L-U

VAR1
VAR2

OUT

SST12LP17E

Data Sheet

Frequency range 2412 2484 MHz

Gain variation over band (2412–2484 MHz) ±0.5 dB
Gain ripple over channel (20 MHz) 0.2 dB

3%

54 Mbps signal
Output Power to meet 802.11g OFDM 54 Mbps

spectrum mask
Output Power to meet 802.11b DSSS 1 Mbps

spectrum mask

20.5 21.5 dBm

21 22 dBm

T4.2 75004

©2012 Silicon Storage Technology, Inc. DS-75004E 07/12

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PROPRIETARY AND

CONFIDENTIAL

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

A

Mag (dB)

Frequency (GHz)

Mag (dB)

Frequency (GHz)

Mag (dB)

Frequency (GHz)

Mag (dB)

Frequency (GHz)

Microchip Technology Company

Typical Performance Characteristics

Test Conditions: VCC= 3.3V, TA= 25°C, unless otherwise specified

S11 versus Frequency

10

0

-10

-20

-30

-40

-50

-60
012345678910

SST12LP17E

Data Sheet

S12 versus Frequency

10

0

-10

-20

-30

-40

-50

-60
012345678910

S21 versus Frequency

40
30
20
10

0

-10

-20

-30

-40

-50
012345678910

Figure 3: S-Parameters

S22 versus Frequency

10

0

-10

-20

-30

-40

-50

-60
012345678910

1426 S-Parms.1.2

©2012 Silicon Storage Technology, Inc. DS-75004E 07/12

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PROPRIETARY AND

CONFIDENTIAL

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

A

EVM (%)

Output Power (dBm)

Power Gain (dB)

Output Power (dBm)

Microchip Technology Company

Typical Performance Characteristics

Test Conditions: VCC= 3.3V, TA= 25°C, 54 Mbps 802.11g OFDM Signal
Equalizer Training Setting using Channel Estimation Sequence only

10

9
8
7
6
5
4
3
2
1
0

10 11 12 13 14 15 16 17 18 19 20 21 22

Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz

SST12LP17E

Data Sheet

EVM versus Output Power

Figure 4: EVM versus Output Power

Power Gain versus Output Power

30
28
26
24
22
20
18
16
14
12
10

10 11 12 13 14 15 16 17 18 19 20 21 22

Freq =2. 412 GHz
Freq =2. 442 GHz
Freq =2. 472 GHz

1426 F4.2

1426 F5.2

©2012 Silicon Storage Technology, Inc. DS-75004E 07/12

Figure 5: Power Gain versus Output Power

8

PROPRIETARY AND

CONFIDENTIAL

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

A

Output Power (dBm)

Microchip Technology Company

Supply Current versus Output Power

170
160
150
140
130
120
110
100

90
80

Supply Current (mA)

70
60
50
40

10 11 12 13 14 15 16 17 18 19 20 21 22

Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz

SST12LP17E

Data Sheet

1426 F6.2

Figure 6: Total Current Consumption for 802.11g operation versus Output Power

PAE versus Output Power

34
32
30
28
26
24
22
20
18
16
14

PAE (%)

12
10

8
6
4
2
0

10 11 12 13 14 15 16 17 18 19 20 21 22

Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz

Output Power (dBm)

1426 F7.2

©2012 Silicon Storage Technology, Inc. DS-75004E 07/12

Figure 7: PAE versus Output Power

9

PROPRIETARY AND

CONFIDENTIAL

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

A

Microchip Technology Company

Detector Voltage versus Output Power

1.00

0.90

0.80

0.70

0.60

0.50

Detector Voltage (V)

0.40

0.30

0.20
10 11 12 13 14 15 16 17 18 19 20 21 22

Freq=2.412 GHz
Freq=2.442 GHz
Freq=2.472 GHz

Output Power (dBm)

SST12LP17E

Data Sheet

1426 F8.2

Figure 8: Detector Characteristics versus Output Power

VCC

50

Ω

RFIN

* Place VCC capacitor

close to Pin #1 and
allow 1mm trace to
Pin #2.

4.7

µF*

1

12LP17E

2

2X2 8L X2SON

3

4

Top View

8

7

6

5

50Ω

RFOUT

VREG

Figure 9: Typical Schematic for High-Efficiency 802.11b/g/n Applications

Vdet

1426 F9.1

©2012 Silicon Storage Technology, Inc. DS-75004E 07/12

10

PROPRIETARY AND

CONFIDENTIAL

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

A

Microchip Technology Company

Product Ordering Information

SST 12 LP 17E - XX8E

XX XX XXX

-

SST12LP17E

Data Sheet

XXXX

Environmental Attribute

E1= non-Pb contact (lead) finish

Package Modifier

8 = 8 contact

Package Type

XX = X2SON
QU = USON

Product Family Identifier

Product Type

P = Power Amplifier

Voltage

L = 3.0-3.6V

Frequency of Operation

2 = 2.4 GHz

Product Line

1 = RF Products

1. Environmental suffix “E” denotes non-Pb sol­der. SST non-Pb solder devices are “RoHS
Compliant”.

Valid combinations for SST12LP17E

SST12LP17E-XX8E SST12LP17E-QU8E

SST12LP17E Evaluation Kits

SST12LP17E-XX8E-K SST12LP17E-QU8E-K

Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST

sales representative to confirm availability of valid combinations and to determine availability of new combi­nations.

©2012 Silicon Storage Technology, Inc. DS-75004E 07/12

11

PROPRIETARY AND

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2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

A

Microchip Technology Company

Packaging Diagrams

Pin 1

(laser

engraved

see note 2)

TOPVIEW BOTTOM VIEWSIDE VIEW

2.00

±0.10

2.00

±0.10

0.40

0.34

0.08

0.05 Max

1.60

1.55

0.75

SST12LP17E

Data Sheet

See notes

3and4

Pin 1

0.40 BSC

0.2

0.3

Note: 1. Similar to JEDEC JEP95 XQFN/XSON variants, though total height, number of contacts, and some dimensions are

Figure 10:8-Contact Super-thin Small Outline No-lead (X2SON)

different.

2. The topside pin 1 indicator is laser engraved; its approximate shape and location is as shown.

3. From the bottom view, the pin 1 indicator may be either a curved indent or a 45-degree chamfer.

4. The external paddle is electrically connected to the die back-side and toV
This paddle must be soldered to the PC board; it is required to connect this paddle to theV
Connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device.

5 Untoleranced dimensions are nominal target dimensions.

6. All linear dimensions are in millimeters (max/min).

SST Package Code: XX8

SS

1mm

8-x2son-2x2-XX8-2.0

.

of the unit.

SS

©2012 Silicon Storage Technology, Inc. DS-75004E 07/12

12

PROPRIETARY AND

CONFIDENTIAL

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

A

Microchip Technology Company

Pin 1

(laser

engraved

see note 2)

TOPVIEW BOTTOM VIEWSIDE VIEW

2.00

±0.10

2.00

±0.10

0.60

0.50

0.08

0.05 Max

1.60

1.55

0.75

SST12LP17E

Data Sheet

See notes

3and4

Pin 1

0.40 BSC

0.2

0.3

1mm

8-uson-2x2-QU8-2.0

Note: 1. Similar to JEDEC JEP95 XQFN/XSON variants, though number of contacts and some dimensions are different.

2. The topside pin 1 indicator is laser engraved; its approximate shape and location is as shown.

3. From the bottom view, the pin 1 indicator may be either a curved indent or a 45-degree chamfer.

4. The external paddle is electrically connected to the die back-side and toV

This paddle must be soldered to the PC board; it is required to connect this paddle to theV

Connection of this paddle to any other voltage potential will result in shorts and electrical malfunction of the device.

5. Untoleranced dimensions are nominal target dimensions.

6. All linear dimensions are in millimeters (max/min).

Figure 11:8-Contact Ultra-thin Small Outline No-lead (USON)

SST Package Code: QU8

SS

.

of the unit.

SS

©2012 Silicon Storage Technology, Inc. DS-75004E 07/12

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PROPRIETARY AND

CONFIDENTIAL

2.4 GHz High-Efficiency, High-Gain Power Amplifier Module

A

©

Microchip Technology Company

Table 5:Revision History

SST12LP17E

Data Sheet

Revision Description Date

00

C

D

• Initial release of data sheet

A

B

E

• Modified “Features”, “Product Description” on page 2, Table 1 on
page 4, Table 3 on page 5, Table 4 on page 6, Figure 1 on page 3, and
Figure 9 on page 10.

• Replaced Figures 3-8.

• Updated document type to “Data Sheet”

• Changed supply voltage in “Electrical Specifications” on page 5

• Revised VCC values in Table 3 on page 5

• Updated package to 8-contact X2SON (XX8)

• Revised performance information to reflect new package type including

Tables 2, 3, and 4

• Revised Supply Voltage on page 5.

• Added QU8 package information

• Updated maximum supply voltage from 5.5V to 6.0V in “Absolute Maxi-

mum Stress Ratings” on page 5

• Updated Supply Voltage from 4.2 to 4.6 in Table 3 on page 5

• Updated Figures 10 and 11 to reflect new Pin 1 indicator

Apr 2010
Apr 2011

Oct 2011

Feb 2012

Mar 2012

Jul 2012

ISBN:978-1-62076-411-4

2012 Silicon Storage Technology, Inc–a Microchip Technology Company. All rights reserved.

SST,SiliconStorage Technology, theSST logo, SuperFlash,MTP, and FlashFlexareregistered trademarks ofSilicon Storage Tech­nology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and
registered trademarks mentioned herein are the property of their respective owners.

Specifications are subjectto change without notice. Refer to www.microchip.comfor the most recent documentation. For the mostcurrent
package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging.

Memory sizes denote raw storage capacity; actual usable capacity may be less.
SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of

Sale.
For sales office locations and information, please see www.microchip.com.

Silicon Storage Technology, Inc.

©2012 Silicon Storage Technology, Inc. DS-75004E 07/12

A Microchip Technology Company

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