Datasheet SSRP105B1 Datasheet (SGS Thomson Microelectronics)

®

SSRP105B1

Application Specific Discretes

DUAL ASYMMETRICAL OVERVOLTAGE

ASD™

MAIN APPLICATIONS

Where asymmetrical protection against lightning
strikes andother transient overvoltages is required :

Solid-State relays

■

SLIC with integrated ring generator

■

DESCRIPTION

The SSRP105B1 is a dual asymmetrical transient
voltage suppressor designed to protect a
solid-state ring relay or SLICs with integrated ring
generator from overvoltages.
The asymmetrical protection configuration is
necessary to allow the use of all different types of
ringing schemes.

FEATURES

■ Dual bi-directional asymmetrical protection

Stand-off voltages:

● Between Line and Ground

+105V for positive voltages

-180V for negative voltages

●

Between Line and Line

+180V for positive voltages

-180V for negative voltages

■

Peak pulse current: IPP= 50A (5/310µs)

■

Holding current:

●

IH+= 100mA

●

IH-= 150mA

PROTECTION FOR TELECOM LINE

SO-8

FUNCTIONAL DIAGRAM

GND

8

GND

7

GND

6

5

GND

RING

1

TIP

NC

2

NC

3

4

COMPLY WITH THE FOLLOWING STANDARDS

Peak Surge

Voltage

(V)

ITU-T K20 / K21
VDE0433
IEC61000-4-5

1500 10/700 5/310 38 ­2000 10/700 5/310 50 -

Level 3
Level 4

FCC Part 68

1500

800

BELLCORE
GR1089 First level

TM: ASD is trademarks of STMicroelectronics.

October 2002 - Ed: 1A

2500
1000

Voltage

Waveform

(µs)

10/700

1.2/50

10/160
10/560

2/10

10/1000

Current

Waveform

(µs)

5/310

8/20

10/160
10/560

2/10

10/1000

Required

Peak

current

(A)

50

100
200

100
500

100

Min. serial

resistor to meet

standards

(Ω)

-

-

18
10

10
19

1/6

SSRP105B1

APPLICATION INFORMATION
Fig.1: Topologyof the classical line card protection.

2nd

stage

R

TIP

SLIC

R

RING

Ring generator

LINE

PTC

PTC

1st

stage

±V

RING

VRINGBAT

The classical line card requiresprotection before the
ring relay and a second one for the SLIC (

figure 1

).

The use of new SLICs with integrated ring
generator or board based on solid-state ring relay
suppresses this second protection (

figure 2

Then, the only remaining stage, located between
the line and the ring relay, has to optimize the
protection.
The classical symmetrical first stage protector
becomes not sufficient to avoid any circuit
destruction during surges.

Fig. 2: Classical use of the SSRP105B1.

PTC

PTC

SSRP105B1

(*) SLIC with integrated ring generator or Solid-State Relay

R

R

The SSRP105B1 device takes into account this
fact and is based on asymmetrical voltage
characteristics (

figure 3a

). The ring signal being
shifted back by the battery voltage, the
SSRP105B1 negative breakover value V

).

greater than the positive one V

BO+

guaranteesaprotection operation very close tothe
peak of the normal operating voltage without any
disturbance of the ring signal.

TIP

(*)

SLIC

RING

BO-

. This point

is

Fig. 3: SSRP105B1 electrical characteristics.

a: Line to ground characteristics.

I

VBO-

BO+

V

In addition with the 2 crowbar functions which
perform the protection of both TIP and RING lines
versus ground, athird cell assumesthe differential
mode protection of the SLIC. The breakover
voltage values of this third cell are the same for

2/6

V

b: Line to line characteristics.

I

VBO-

BO+

V

both positive and negative parts of the
characteristics and are equivalent to the negative
breakover voltage valueof theTIP and RINGlines
versus GND cells (

figure 3b

).

V

SSRP105B1

ABSOLUTE MAXIMUM RATINGS (T

amb

= 25°C)

Symbol Parameter Value Unit

I

PP

I

TSM

T

op

T

stg

T

j

T

L

Note 1 : Pulse waveform :

Peak pulse current (see note 1)

Non repetitive surge peak on-state current
(F=50Hz)

Operating temperature range
Storage temperature range

Maximum operating junction temperature
Maximum lead temperature for soldering during 10s

10/1000µs t
10/560µs t
5/310µs t
10/160µs t
8/20µs t
2/10µs t

=10µs tp=1000µs

r

=10µs tp=560µs

r

=5µs tp=310µs

r

=10µs tp=160µs

r

=8µs tp=20µs

r

=2µs tp=10µs

r

10 / 1000 µs

10 / 560µs

5 / 310µs

10 / 160µs

8 / 20µs
2 / 10µs

tp = 0.2 s

tp=5s

tp = 15 min.

%I

PP

100

50

0

35
45
50

60
120
175

8.5

4.5

2.5

0to+70 °C

-55to+150
+ 150

260 °C

t

t

p

r

t

A

A

°C
°C

THERMAL RESISTANCE

Symbol Parameter Value Unit

R

th (j-a)

ELECTRICAL CHARACTERISTICS (T

Symbol Parameter

V

R

I

R

V

BR

V

BO

I

H

I

BO

I

PP

C

Junction to ambient

= 25°C)

amb

Stand-off voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakover voltage
Holding current
Breakover current
Peak pulse current
Capacitance

170 °C/W

I

IPP

IH
IR

VR VBR VBO

V

3/6

SSRP105B1

ELECTRICAL CHARACTERISTICS between TIP and GND, RING and GND (T

amb

=25°C)

Symbol Parameter Test conditions (note 1) Min. Typ. Max. Unit

V

BO

Breakover voltage
(note 2)

I

H

I

R

Holding current Positive polarity

Leakage current
(note 3)

C

Capacitance F = 1MHz, V

ELECTRICAL CHARACTERISTICS between TIP and RING (T

Positive voltage

Negative voltage

Negative polarity
VR= +105 V

= - 180 V

V

R

F = 1MHz, V

RMS
RMS

. 50Hz
. 10/700µs

. 50Hz
. 10/700µs

= 1V, V
= 1V, V

R(T/G)
R(T/G)

= -5V
= -50V

=25°C)

amb

165
165

225
225

100
150

10
10

30
16

Symbol Parameter Test conditions Min Max Unit

I

R

Note 1: Positive voltage means between T and G, or between R and G.
Note 2: See test circuit for V

Note 3: I

Leakage current (note 3) VR= +180 V

= - 180 V

V

R

Negative voltage means between G and T,orbetweenGandR.

measured at VRguarantees VBR>V

R

parameters

BO

R

Fig. 4:Relative variationof holding current versus
junction temperature.

IH(Tamb)/IH(Tamb=25°C)

1.2
1

0.8

0.6

0.4

0.2
0

0 20406080

Tamb(°C)

Fig. 5: Non-repetitive peak on-statecurrentversus

overload duration (Tj initial = +25°C)..

ITSM(A)

25

20

15

10

5

0

0.01 0.1 1 10 100 1000

tp(s)

10
10

F= 50Hz

V

mA

µA

pF

µA

4/6

Fig. 6: Capacitance versus applied reverse
voltages (typical values).

C(pF)

100

TIPor RING(+) / GND(-)

10

1

1 10 100 1000

VR(V)

Tj= 25°C
F= 1MHz
Vrms= 1V

GND(+) / TIP or RING(-)

FUNCTION HOLDING CURRENT (IH) TEST CIRCUIT (GO-NO GO TEST)

R

D.U.T.

V

= - 48 V

BAT

Surge generator

This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test
circuit.

TEST PROCEDURE :

SSRP105B1

1) Adjust the current level at the I

value by short circuiting the D.U.T.

H

2) Fire the D.U.T with a surge Current : Ipp = 10A , 10/1000µs.

3) The D.U.T will come back off-state within 50 ms max.

TEST CIRCUIT FOR VBOPARAMETERS:

R4

TIP

L

R2

RING

R3

VP

C

1 R1

C2

GND

Pulse (µs) V

t

r

t

p

p

(V) (µF) (nF) (µH) (Ω)(Ω)(Ω)(Ω) (A) (Ω)

C

1

10 700 1000 20 200 0 50 15 25 25 38 0

1.2 50 1500 1 33 0 76 13 25 25 30 10
2 10 2500 10 0 1.1 1.3 0 3 3 38 62

C

2

LR

1

R

2

R

3

R

4

IPPR

p

ORDER CODE

SSRP 105 B 1 RL

SOLID STATE RELAY
PROTECTION

STAND-OFFVOLTAGE

PACKAGING:
RL = Tape and Reel

= Tube

PACKAGE:
1 = SO-8 Plastic

5/6

SSRP105B1

OTHER INFORMATION

Ordering type Marking Package Weight Base Qty (pcs) Delivery mode

SSRP105B1

SSRP105B1RL

SSR105 SO-8 0.08g.

PACKAGE MECHANICAL DATA

SO-8 (Plastic)

ddd C

A2

A1

B

8

e

D

5

E

41

C

(Seating

Plane)

A

k

H

h x 45°

0.25mm

(Gage Plane)

L

REF.

Millimetres Inches

Min. Max. Min. Max.

A 1.35 1.75 0.053 0.069
A1 0.1 0.25 0.004 0.010
A2 1.10 1.65 0.043 0.065

B 0.33 0.51 0.013 0.020

C 0.19 0.25 0.007 0.010

D 4.80 5.00 0.189 0.197

E 3.80 4.00 0.150 0.157

e 1.27 Typ. 0.05 Typ.

H 5.80 6.20 0.228 0.244

h 0.25 0.50 0.010 0.019
L 0.40 1.27 0.016 0.050
k 8° (max)

ddd 0.100 0.004

100

2500

DIMENSIONS

Tube

Tape & Reel

FOOT-PRINT DIMENSIONS (in millimeters)

6.8

0.6

4.2

1.27

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useof such information norfor any infringementof patents orother rights ofthird parties whichmay result fromits use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written
approval of STMicroelectronics.

The ST logo is a registered trademarkof STMicroelectronics

© 2002 STMicroelectronics - Printed in Italy- All rights reserved.

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