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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
N-Ch Enhancement Mode Power MOSFET
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide Low R
and to ensure minimal power loss and heat
DS(on)
dissipation. Typical applications are DC-DC converters and power management
in portable and battery-powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
Low R
Low thermal impedance copper leadframe ITO-220 saves board
space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and extends battery life.
DS(on)
SSRF60N10
51A, 100V, R
78mΩ
DS(ON)
ITO-220
B N
J
CH
K
LL
D
E
AM
G
F
PRODUCT SUMMARY
Dimensions in millimeters
PRODUCT SUMMARY
I
V
(V) R
DS
100
(on) m(
DS
78@V
= 10V
GS
92@VGS= 4.5V
(A)
D
51
a
Drain
REF.
Gate
Millimeter
Min. Max. Min. Max.
A 15.00 15.60 H 3.00 3.80
B 9.50 10.50 J 0.90 1.50
C 13.00 Min K 0.50 0.90
D 4.30 4.70 L 2.34 2.74
E 2.50 3.10 M 2.50 2.90
F 2.40 2.80 N
G 0.30 0.70
REF.
Source
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a I
Total Power Dissipation a P
Operating Junction and Storage Temperature Range TJ, T
a
I
b
IDM 240 A
@T
=25℃ 51 A
D
C
90 A
S
=25℃ 300 W
D @TC
-55 ~ 175 °C
STG
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a R
Maximum Thermal Resistance Junction-Case R
62.5 °C / W
θJA
0.5 °C / W
θJC
Notes：
a. Package Limited.
b. Pulse width limited by maximum junction temperature.
Millimete
3.1
3.4
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Jul-2010 Rev.A Page 1 of 4
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise specified)
A
N-Ch Enhancement Mode Power MOSFET
SSRF60N10
51A, 100V, R
DS(ON)
78mΩ
PARAMETER
SYMBO
MIN. TYP. MAX. UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current a I
Drain-Source On-Resistance a R
Forward Transconductance a g
Diode Forward Voltage V
GS(th)
- - ±100 nA VDS = 0V, VGS= 20V
GSS
DSS
120 - - A VDS = 5V, VGS= 10V
D(on)
DS(ON)
fs
SD
Total Gate Charge Qg - 8.5 -
Gate-Source Charge Qgs - 3.3 -
Gate-Drain Charge Qgd - 4.0 -
1 - - V VDS= V
- - 1
- - 25 VDS= 80V, VGS= 0V, TJ=55°C
- - 78
mΩ
- - 92 VGS= 4.5V, ID= 20 A
- 30 - S VDS= 15V, ID= 30 A
- 1.1 - V IS= 34 A, VGS= 0 V
Dynamic
b
VDS= 80V, VGS= 0V
μA
= 10V, ID= 30 A
V
GS
V
= 15 V
nC
DS
VGS = 4.5 V
I
= 90 A
D
GS, ID
= 250 μA
Turn-on Delay Time T
- 18 -
d(on)
Rise Time Tr - 59 -
Turn-off Delay Time T
- 37 -
d(off)
Fall Time Tf - 9 -
Notes
a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.
b. Guaranteed by design, not subject to production testing.
nS
V
= 25 V
DD
I
= 34 A
D
V
GEN
= 25
R
L
= 10 V
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Jul-2010 Rev.A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSRF60N10
N-Ch Enhancement Mode Power MOSFET
51A, 100V, R
DS(ON)
78mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Jul-2010 Rev.A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSRF60N10
N-Ch Enhancement Mode Power MOSFET
51A, 100V, R
DS(ON)
78mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
14-Jul-2010 Rev.A Page 4 of 4
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