Page 1
AM
J
K
LL
G
F
B N
D
E
CH
ITO-220
Millimeter
Millimeter
Min. Max. Min. Max.
A 14.60 15.70 H
2.70 3.80
B 9.50 10.50 J 0.90 1.50
C 12.60 14.00 K
0.50 0.90
D 4.30 4.70 L 2.34 2.74
E 2.30
3.2 M 2.40
3.00
F 2.30
2.80 N
φ
3.0
φ 3.4
G 0.30 0.70
1
3
2
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The N-Channel MOSFET is used an advanced termination
scheme to provide enhanced voltage-blocking capability without
degrading performance over time. This advanced technology has
been especially tailored to minimize on-state resistance, provide
superior switching performance. This device is well suited for high
efficiency switched mode power suppliers, active power factor
correction, electronic lamp ballasts based half bridge topology.
FEATURES
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
Gate
Drain
SSRF4N60
4A , 600 V , R
REF.
DS(ON)
2.4 ΩΩΩΩ
REF.
Source
ABSOLUTE MAXIMUM RATINGS(
Parameter Symbol
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current ID 4.0 A
Pulsed Drain Current IDM 16 A
Power Dissipation2
Derating factor above 25°C 0.26 W / °C
Single Pulsed Avalanche Energy1 EAS 330 mJ
Repetitive Avalanche Energy2 EAR 7.3 mJ
Operating Junction and Storage Temperature Range TJ, T
Maximum Junction to Ambient R
Maximum Junction to Case R
Notes:
1. L=30mH, IAS=4.4A, VDD=85V, RG=25Ω, Starting TJ=25°C
2. Repetitive Rating: Pulse width limited by maximum junction temperature
TC=25°C unless otherwise specified
PD
150,-55~150 °C
stg
Thermal Resistance Rating
θJA
θJC
62.5
3.79
)
Ratings
33 W
Unit
°C / W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
5-Jul-2011 Rev. A Page 1 of 4
Page 2
SSRF4N60
4A , 600 V , R
Elektronische Bauelemente
N-Channel Enhancement Mode Power MOSFET
DS(ON)
2.4 ΩΩΩΩ
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit
Gate-Threshold Voltage V
Drain-Source On-Resistance R
Drain-Sounce Breakdown Voltage BV
Zero Gate Voltage Drain Current I
Gate-Body Leakage Current, Forward I
Gate-Body Leakage Current, Reverse I
(TA=25°C unless otherwise specified)
Static
GS(th)
DS(ON)
DSS
DSS
GSSF
GSSR
2.0 - 4.0 V VDS=VGS, ID=250µA
- 2.0 2.4 Ω VGS=10V, ID=2A
600 - - V VGS=0, ID=250µA
- - 10 µA VDS=600V, VGS=0
- - 100 nA VGS=30V, VDS=0
- - -100 nA VGS= -30V, VDS=0
Test Conditions
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance C
Reverse Transfer Capacitance
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current
Drain-Source Diode Forward Voltage VSD - - 1.4 V VGS=0, IS=4.0A
Reverse Recovery Time Trr - 300 - nS
Reverse Recovery Charge 1 Qrr - 2.2 - µC
Notes:
1. Pulse Test: Pulse width < 300us, Duty cycle ≤ 2%.
2. Basically not affected by working temperature.
1.2
1.2
1.2
Qg - 19.8 -
1.2
Qgs - 4 -
1.2
Qgd - 7.2 -
1.2
T
Tr - 19 -
1.2
T
Tf - 22 -
- 27 -
d(on)
- 160 -
d(off)
- 672 -
iss
C
- 66 -
oss
C
- 4.7 -
rss
IS - - 4.0 A
ISM - - 16 A
VDS=480V, ID=4.4A,
nC
VGS=10V
VDD=300V, ID =4.4A, RG=25Ω
nS
pF VDS=25V, VGS=0, f =1.0MHz Output Capacitance
VGS=0, IS=4.0A,
IF / dt =100A/µs
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
5-Jul-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSRF4N60
4A , 600 V , R
N-Channel Enhancement Mode Power MOSFET
DS(ON)
2.4 ΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
5-Jul-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSRF4N60
4A , 600 V , R
N-Channel Enhancement Mode Power MOSFET
DS(ON)
2.4 ΩΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
5-Jul-2011 Rev. A Page 4 of 4
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