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r
2
3
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Elektronische Bauelemente
FEATURES
Low R
Low thermal impedance.
Fast switching speed.
Technology.
DS(on)
APPLICATIONS
Electronic ballast.
Electronic transformer
Switch mode power supply.
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
SSQ5N50
4.5A, 500V, R
G
H
X
Q
1500mΩ
DS(ON)
TO-220P
D
C
B
A
E
J
L
O
R
F
I
K
M
N
P
Q
T
S
U
V
W
Gate
Drain
Source
REF.
A 7.90 8.10 N 0.75 0.95
B 9.45 9.65 O 0.66 0.86
C 9.87 10.47 P 13.50 14.50
D - 11.50 Q 2.44 3.44
E 1.06 1.46 R 3.50 3.70
F 2.60 3.00 S 1.15 1.45
G 6.30 6.70 T 4.30 4.70
H 8.35 8.75 U - 2.7
J1.60 Typ. V 1.89 3.09
K 1.10 1.30 W 0.40 0.60
L 1.17 1.37 X 2.60 3.60
M - 1.50
Dimensions in millimeters
Millimeter
Min. Max. Min. Max.
REF.
Millimete
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise specified)
A
PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction) 1 I
Total Power Dissipation 1 P
Operating Junction and Storage Temperature Range TJ, T
1
I
2
IDM 18 A
@T
=25℃ 4.5 A
D
C
4.5 A
S
=25℃ 74 W
D @TC
-55 ~ 175 °C
STG
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient 1 R
Maximum Thermal Resistance Junction-Case R
62.5 °C / W
θJA
1.7 °C / W
θJC
Notes：
1 Package Limited.
2 Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
02-Dec-2010 Rev.A Page 1 of 4
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
4.5A, 500V, R
N-Ch Enhancement Mode Power MOSFET
= 25°C unless otherwise specified)
A
SSQ5N50
1500mΩ
DS(ON)
PARAMETER
SYMBO
MIN. TYP. MAX. UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage V
GS(th)
- - ±100 nA VDS = 0V, VGS= ±20V
GSS
DSS
5 - - A VDS = 10V, VGS= 10V
D(on)
DS(ON)
fs
SD
Total Gate Charge Qg - 26 -
Gate-Source Charge Qgs - 4 -
Gate-Drain Charge Qgd - 15 -
Turn-on Delay Time T
- 12.8 -
d(on)
Rise Time Tr - 7.4 -
Turn-off Delay Time T
- 38 -
d(off)
Fall Time Tf - 19.6 -
2 - 4 V VDS= V
- - 25
μA
- - 250
- - 1500 mΩ VGS= 10V, ID= 2.7 A
- 2.5 - S VDS= 50V, ID= 2.7 A
- 1.6 - V IS= 4.5 A, VGS= 0 V
Dynamic
2
nC
nS
= 250 μA
GS, ID
VDS= 500V, VGS= 0V
V
= 400V,
DS
VGS= 0V, TJ=125°C
V
= 400 V
DS
V
= 10 V
GS
ID = 3.1 A
= 250 V
V
DD
ID= 3.1 A
V
= 10 V
GEN
RL= 79
= 12
R
GEN
Input Capacitance C
Output Capacitance C
- 623 -
ISS
- 112 -
OSS
pF
V
DS
V
GS
= 25 V
= 0 V
f = 1MHz
Reverse Transfer Capacitance C
Notes
1 Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％.
2 Guaranteed by design, not subject to production testing.
- 24 -
RSS
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
02-Dec-2010 Rev.A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSQ5N50
N-Ch Enhancement Mode Power MOSFET
4.5A, 500V, R
DS(ON)
1500mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
02-Dec-2010 Rev.A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSQ5N50
4.5A, 500V, R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
1500mΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
02-Dec-2010 Rev.A Page 4 of 4
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