Page 1
B
E
F
G
g
A
e
b
θ
D
C
d
Millimeter
Millimeter
Min. Max. Min. Max.
°
B 3.00BSC
b
0.20 0.40
C 0.10 0.25 d 0.65BSC
D 1.80 2.3 e 3.00BSC
E 3.2BSC
g
0.70(TYP.)
F 0.01 0.02
G 2.35BSC
Top View
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low R
and to ensure minimal power loss and
DS(on)
heat dissipation.
FEATURES
Low R
provides higher efficiency and
DS(on)
extends battery life
Low thermal impedance copper leadframe
DFN3x3-8PP saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package MPQ Leader Size
SSPS922NE
8.2 A , 20 V , R
N-Ch Enhancement Mode Power MOSFET
REF.
A 0.70 0.90 θ 0° 12
17.5 mΩ
DS(ON)
DFN3x3-8PP
REF.
ΩΩΩ
DFN3x3-8PP 3K 13 inch
MAXIMUM RATINGS
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±8 V
Continuous Drain Current 1
Pulsed Drain Current 2 IDM 40 A
Continuous Source Current (Diode Conduction) 1 IS 2.1 A
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
Thermal Resistance Junction-Ambient (Max.)
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
(TA = 25°C unless otherwise specified)
Parameter
TA = 25°C
TA = 70°C 6 A
TA = 25°C
TA = 70°C 0.8 W
Thermal Resistance Ratings
t ≦ 10sec
1
Steady State
Symbol Ratings Unit
ID
PD
-55~150 °C
STG
R
θJA
8.2 A
1.5 W
83 °C / W
120 °C / W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
03-Mar-2012 Rev. A Page 1 of 4
Page 2
SSPS922NE
8.2 A , 20 V , R
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
DS(ON)
17.5 mΩ
ΩΩΩ
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Gate-Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 gfs - 25 - S VDS=10V, ID=6.6A
Diode Forward Voltage VSD - 0.68 - V IS=1.1A, VGS=0
0.4 - - V VDS=VGS, ID=250µA
GS(th)
- - ±100 nA VDS=0, VGS=±8V
GSS
DSS
15 - - A VDS=5V, VGS=4.5V
D(on)
- - 25 VDS=16V, VGS=0, TJ=55°C
- - 17.5
- - 1
DS(ON)
- - 22 VGS=2.5V, ID=2A
VDS=16V, VGS=0
µA
VGS=4.5V, ID=2A
mΩ
Dynamic 2
Total Gate Charge Qg - 11 Gate-Source Charge Qgs - 2.7 Gate-Drain Charge Qgd - 2.1 Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On Delay Time T
- 877 -
iss
- 88 -
oss
- 254 -
rss
- 57 -
d(on)
Rise Time Tr - 87 Turn-Off Delay Time T
- 604 -
d(off)
Fall Time Tf - 198 -
Notes:
1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
nC
pF
nS
VDS=10V,
VGS=4.5V,
ID=6.6A
VDS=15 V,
VGS=0
f=1MHz
VDS=10V
ID=6.6A
V
=4.5V
GEN
RL=1.6Ω
R
=6Ω
GEN
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
03-Mar-2012 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSPS922NE
8.2 A , 20 V , R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
17.5 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
03-Mar-2012 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSPS922NE
8.2 A , 20 V , R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
17.5 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
03-Mar-2012 Rev. A Page 4 of 4
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