Page 1
B
E
F
G
g
A
e
b
θ
D
C
d
Millimeter
Millimeter
Min. Max. Min. Max.
°
B 3.00BSC
b
0.20 0.40
C 0.10 0.25 d 0.65BSC
D 1.80 2.3 e 3.00BSC
E 3.2BSC
g
0.70(TYP.)
F 0.01 0.02
G 2.35BSC
Top View
Elektronische Bauelemente
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low R
and to ensure minimal power loss and
DS(on)
heat dissipation.
FEATURES
Low R
extends battery life
Low thermal impedance copper leadframe
provides higher efficiency and
DS(on)
DFN3x3-8PP saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
PACKAGE INFORMATION
RoHS Compliant Product
SSPS7333P
-10.9 A , -30 V , R
P-Ch Enhancement Mode Power MOSFET
DFN3x3-8PP
DS(ON)
20 mΩ
ΩΩΩ
Package MPQ Leader Size
DFN3x3-8PP 3K 13 inch
REF.
A 0.70 0.90 θ 0° 12
MAXIMUM RATINGS
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1
Pulsed Drain Current 2 IDM -50 A
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
Thermal Resistance Junction-Ambient (Max.)
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
(TA = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
TA = 25°C
TA = 70°C -8.9 A
TA = 25°C
TA = 70°C 2.0 W
ID
PD
-55~150 °C
STG
-10.9 A
3.5 W
Thermal Resistance Ratings
t ≦ 10 sec
1
Steady State
R
θJA
35 °C / W
81 °C / W
REF.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Jul-2011 Rev. A Page 1 of 2
Page 2
SSPS7333P
-10.9 A , -30 V , R
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
DS(ON)
20 mΩ
ΩΩΩ
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Gate-Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
Drain-Source On-Resistance 1 R
Diode Forward Voltage VSD - -0.8 - V IS=2.5A, VGS=0
-1 - - V VDS=VGS, ID= -250µA
GS(th)
- - ±100 nA VDS=0, VGS= ±25V
GSS
DSS
DS(ON)
- - -1
µA
- - -5 VDS= -24V, VGS=0, TJ=55°C
- - 20
mΩ
- - 36 VGS= -4.5V, ID= -8A
Dynamic 2
Total Gate Charge Qg - 33 Gate-Source Charge Qgs - 5 Gate-Drain Charge Qgd - 9 Turn-On Delay Time T
Rise Time Tr - 6 Turn-Off Delay Time T
Fall Time Tf - 20 -
Notes:
1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
- 10 -
d(on)
- 34 -
d(off)
nC
nS
VDS= -24V, VGS=0
VGS= -10V, ID= -10A
VDS= -15 V,
VGS= -5 V,
ID= -11.5 A
VDD= -15V
ID= -1A
V
= -10V
GEN
RL=6Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Jul-2011 Rev. A Page 2 of 2
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