Page 1
B
E
F
G
g
A
e
b
θ
D
C
d
Millimeter
Millimeter
Min. Max. Min. Max.
°
B 3.00BSC
b
0.20 0.40
C 0.10 0.25 d 0.65BSC
D 1.80 2.3 e 3.00BSC
E 3.2BSC
g
0.70(TYP.)
F 0.01 0.02
G 2.35BSC
T
op View
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide
low R
and to ensure minimal power loss and
DS(on)
heat dissipation. Typical applications are
FEATURES
Low R
extends battery life
Low thermal impedance copper leadframe
provides higher efficiency and
DS(on)
DFN3x3-8PP saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package MPQ Leader Size
DFN3x3-8PP 3K 13 inch
SSPS7330N
11 A , 30 V, R
N-Ch Enhancement Mode Power MOSFET
REF.
A 0.70 0.90 θ 0° 12
22 mΩ
DS(ON)
DFN3x3-8PP
REF.
ΩΩΩ
MAXIMUM RATINGS
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current 1
Pulsed Drain Current 2 IDM 40 A
Continuous Source Current (Diode Conduction) 1 IS 2.9 A
Total Power Dissipation 1
Operating Junction & Storage Temperature Range TJ, T
Thermal Resistance Junction-Ambient (Max.)
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
(TA=25°C unless otherwise specified)
Parameter Symbol Ratings Unit
TA=25°C
TA=70°C 9 A
TA=25°C
TA=70°C 2.0 W
ID
PD
-55~150 °C
STG
11 A
3.5 W
Thermal Resistance Ratings
t ≦ 10 sec
1
Steady State
R
θJA
35 °C / W
81 °C / W
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Jul-2011 Rev. A Page 1 of 4
Page 2
SSPS7330N
11 A , 30 V, R
Elektronische Bauelemente
N-Ch Enhancement Mode Power MOSFET
DS(ON)
22 mΩ
ΩΩΩ
ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Gate-Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 gfs - 40 - S VDS=15V, ID=9.2A
Diode Forward Voltage VSD - 0.7 - V IS=2.3A, VGS=0
1 - - V VDS=VGS, ID=250µA
GS(th)
- - ±100 nA VDS=0, VGS= ±20V
GSS
DSS
- - 1
VDS=24V, VGS=0
µA
- - 25 VDS=24V, VGS=0, TJ=55°C
20 - - A VDS=5V, VGS=10V
D(on)
DS(ON)
- - 22
VGS=10V, ID=9.2A
mΩ
- - 30 VGS=4.5V, ID=7A
Dynamic 2
Total Gate Charge Qg - 40 Gate-Source Charge Qgs - 1.1 Gate-Drain Charge Qgd - 1.4 -
nC
VDS=10V,
VGS=4.5V,
ID=7A
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On Delay Time T
- 720 -
iss
- 165 -
oss
- 60 -
rss
- 16 -
d(on)
Rise Time Tr - 5 Turn-Off Delay Time T
- 23 -
d(off)
Fall Time Tf - 3 -
Notes:
1. Pulse test：PW ≦ 300µs duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
pF
nS
VDS=15V,
VGS=0
f=1MHz
VDD=10V
ID=1A
V
=10V
GEN
RL=6Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Jul-2011 Rev. A Page 2 of 4
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSPS7330N
11 A , 30 V, R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
22 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Jul-2011 Rev. A Page 3 of 4
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVE
SSPS7330N
11 A , 30 V, R
N-Ch Enhancement Mode Power MOSFET
DS(ON)
22 mΩ
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
19-Jul-2011 Rev. A Page 4 of 4
Loading...