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r
°
SSP7481P
Elektronische Bauelemente
-6.7 A, -80 V, R
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DS(ON)
75 m
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process
to provide low R
and to ensure minimal power loss and heat dissipation.
DS(on)
Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
FEATURES
Low R
Low thermal impedance copper leadframe SOP-8PP saves board
space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and extends battery life.
DS(on)
PRODUCT SUMMARY
PRODUCT SUMMARY
I
V
(V) R
DS
-80
(on) (m
DS
75@V
= -10V -6.7
GS
90@VGS= -4.5V -6.1
D
(A)
Gate
Drain
SOP-8PP
B
D
θ
e
E
A
G
REF.
b
Millimete
d
Millimeter
REF.
Min. Max. Min. Max.
A 1.00 1.10 θ 0° 12
B 5.70 5.80 b 0.33 0.51
C 0.20 0.30 d 1.27BSC
D 3.61 3.98 e 1.35 1.75
E 5.40 6.10 g1.10 F 0.08 0.20
G 3.60 3.99
C
g
F
Source
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA
(TA = 25°C unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Drain-Source Voltage VDS -80 V
Gate-Source Voltage VGS ±20 V
=25°C
T
Continuous Drain Current
A
Pulsed Drain Current B I
Continuous Source Current (Diode Conduction) A I
Power Dissipation A
Operating Junction and Storage Temperature Range T
A
TA=70°C -5.0
=25°C
T
A
TA=70°C 3.2
I
D
±50 A
DM
-2.1 A
S
P
D
, T
-55 ~ 150 °C
J
STG
-6.7
5.0
A
W
THERMAL RESISTANCE DATA
Maximum Junction to Ambient A
t≦10 sec
Steady-State 65
R
θJA
25
°C / W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
29-Jul-2010 Rev. A Page 1 of 2
Page 2
SSP7481P
Elektronische Bauelemente
-6.7 A, -80 V, R
P-Channel Enhancement MOSFET
DS(ON)
75 m
ELECTRICAL CHARACTERISTICS (T
=25°C unless otherwise specified)
A
PARAMETER
SYMBO
MIN TYP MAX UNIT TEST CONDITIONS
Static
Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current A I
Drain-Source On-Resistance A R
Forward Transconductance A g
Diode Forward Voltage VSD - -0.8 - V IS= 2.5A, VGS= 0V
-30 - - V VGS= 0V, ID = -250μA
(BR)DSS
-1 - - V V
GS(th)
- -
GSS
±100
- - -1
DSS
- - -5 V
-50 - - A V
D(ON)
- - 75
DS(ON)
nA
μA
mΩ
= VGS, ID = -250μA
DS
V
= 0V, VGS= ±20V
DS
V
= -64V, VGS= 0V
DS
= -64V, VGS= 0V, TJ=55°C
DS
= -5V, VGS= -10V
DS
V
= -10V, ID = -6.7A
GS
- - 90 VGS= -4.5V, ID = -6.1A
- 29 - S VDS= -15V,,ID = -6.7A
FS
Dynamic b
Total Gate Charge Qg - 25 -
Gate-Source Charge Qgs - 11 -
Gate-Drain Charge Qgd - 17 -
Turn-On Delay Time Td
Rise Time Tr - 13 -
Turn-Off Delay Time Td
Fall Time Tf - 54 -
Notes
a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
- 15 -
(ON)
- 100 -
(OFF)
nC
nS
I
= -6.7A
D
= -15V
V
DS
= -5V
V
GS
I
= -1A, VDD= -15V
D
= -10V
V
GEN
= 6Ω
R
L
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
29-Jul-2010 Rev. A Page 2 of 2
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