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r
°
SSP7442N
Elektronische Bauelemente
20 A, 40 V, R
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DS(ON)
9 m
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process
to provide low R
and to ensure minimal power loss and heat dissipation.
DS(on)
Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
FEATURES
Low R
Low thermal impedance copper leadframe SOP-8PP saves board
space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and extends battery life.
DS(on)
PRODUCT SUMMARY
PRODUCT SUMMARY
I
V
(V) R
DS
40
(on) (m
DS
9@V
= 10V 20
GS
12@VGS= 4.5V 17
D
(A)
Gate
Drain
SOP-8PP
B
D
θ
e
E
A
G
REF.
b
Millimete
d
Millimeter
REF.
Min. Max. Min. Max.
A 1.00 1.10 θ 0° 12
B 5.70 5.80 b 0.33 0.51
C 0.20 0.30 d 1.27BSC
D 3.61 3.98 e 1.35 1.75
E 5.40 6.10 g1.10 F 0.08 0.20
G 3.60 3.99
C
g
F
Source
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA
(TA = 25°C unless otherwise specified)
PARAMETER SYMBOL RATING UNIT
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20 V
=25°C
T
Continuous Drain Current
A
Pulsed Drain Current B I
Continuous Source Current (Diode Conduction) A I
Power Dissipation A
Operating Junction and Storage Temperature Range T
A
TA=70°C 16
=25°C
T
A
TA=70°C 3.2
I
D
50 A
DM
2.3 A
S
P
D
, T
-55 ~ 150 °C
J
STG
20
5.0
A
W
THERMAL RESISTANCE DATA
Maximum Junction to Ambient A
t≦10 sec
Steady-State 65
R
θJA
25
°C / W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
28-Jul-2010 Rev. A Page 1 of 2
Page 2
SSP7442N
Elektronische Bauelemente
20 A, 40 V, R
N-Channel Enhancement MOSFET
DS(ON)
9 m
ELECTRICAL CHARACTERISTICS (T
=25°C unless otherwise specified)
A
PARAMETER
SYMBO
MIN TYP MAX UNIT TEST CONDITIONS
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current A I
Drain-Source On-Resistance A R
Forward Transconductance A g
Diode Forward Voltage VSD - 1.1 - V IS= 2.1A, VGS= 0V
1 - - V V
GS(th)
- -
GSS
±100
- - 1
DSS
- - 25 V
34 - - A V
D(ON)
- - 9
DS(ON)
nA V
μA
mΩ
= VGS, ID = 250μA
DS
= 0V, VGS= 20V
DS
V
= 32V, VGS= 0V
DS
= 32V, VGS= 0V, TJ=55°C
DS
= 5V, VGS= 10V
DS
V
= 10V, ID = 7.5A
GS
- - 12 VGS= 4.5V, ID = 7A
- 22 - S VDS= 15V,,ID = 7.5A
FS
Dynamic b
Total Gate Charge Qg - 4.0 -
Gate-Source Charge Qgs - 1.1 -
Gate-Drain Charge Qgd - 1.4 -
Turn-On Delay Time Td
- 16 -
(ON)
Rise Time Tr - 5 -
Turn-Off Delay Time Td
- 23 -
(OFF)
Fall Time Tf - 3 -
Notes
a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
nC
nS
I
= 7.5A
D
= 15V
V
DS
= 4.5V
V
GS
I
= 34A, VDD= 25V
D
= 10V
V
GEN
= 25Ω
R
L
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
28-Jul-2010 Rev. A Page 2 of 2
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