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Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell
density trench process to provide low R
and to ensure
DS(on)
minimal power loss and heat dissipation.
FEATURES
Low R
Low thermal impedance copper leadframe SOP-8PP saves board
space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and extends battery life.
DS(on)
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones
PACKAGE INFORMATION
Package MPQ Leader Size
SOP-8PP 3K 13’ inch
Gate
SSP7438N
22 A, 30 V, R
N-Channel Enhancement MOSFET
Drain
REF.
A 0.85 1.00 θ 0° 10°
B 5.40 5.60 b 5.10 5.30
C 0.15 0.25 c 0.30 0.50
D 3.71 3.91 d 1.27BSC
E 5.95 6.15 e 5.45 5.65
F 0.08 0.24 f 0.20 0.35
G 4.25 4.45 g 1.10 -
7.5 m
DS(ON)
SOP-8PP
Millimeter Millimete
Min. Max.
REF.
Min. Max.
ABSOLUTE MAXIMUM RATINGS
(T
=25°C unless otherwise specified)
A
Source
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current
1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
TA=25°C 22
I
TA=70°C
D
50 A
DM
2.3 A
S
18
A
TA=25°C 5
Power Dissipation 1
=70°C
T
A
Operating Junction and Storage Temperature Range T
P
D
2.2
, T
-55 ~ 150 °C
J
STG
W
Thermal Resistance Rating
Maximum Junction to Ambient 1
t≦10 sec 25
R
θJA
Steady State
65
°C / W
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
03-Jul-2012 Rev. A Page 1 of 2
Page 2
SSP7438N
Elektronische Bauelemente
22 A, 30 V, R
N-Channel Enhancement MOSFET
DS(ON)
7.5 m
ELECTRICAL CHARACTERISTICS (T
=25°C unless otherwise specified)
A
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - 0.7 - V IS=2A, VGS=0
1 - - V V
GS(th)
- - ±100 nA V
GSS
- - 1 V
DSS
40 - - A V
D(ON)
- - 5
μA
DS
DS
DS
V
DS
DS
- - 7.5 VGS=10V, ID =2A
DS(ON)
- 40 - S VDS=15V,,ID =2A
FS
- - 11.5
mΩ
V
GS
Dynamic 2
Total Gate Charge Qg - 16 -
Gate-Source Charge Qgs - 5 -
nC
Gate-Drain Charge Qgd - 6 -
Turn-On Delay Time Td
Rise Time Tr - 4 -
Turn-Off Delay Time Td
- 5 -
(ON)
- 23 -
(OFF)
nS
Fall Time Tf - 9 -
Notes
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
=10A
I
D
V
DS
V
GS
=1A,
I
D
V
DD
V
GEN
R
L
= VGS, ID = 250μA
=0, VGS=20V
=24V, VGS=0
=24V, VGS=0,TJ=55°C
=5V, VGS= 10V
=4.5V, ID =2A
=15V
=4.5V
=15V
=10V
=6Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
03-Jul-2012 Rev. A Page 2 of 2
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