Page 1
r
SSP7431P
Elektronische Bauelemente
-17A, -30V, R
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DS(ON)
13 m
DESCRIPTION
SOP-8PP
These miniature surface mount MOSFETs utilize
a high cell density trench process to provide low R
DS(on)
and to ensure minimal power loss and heat dissipation.
FEATURES
Low R
battery life.
Low thermal impedance copper leadframe SOP-8PP
saves board space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and extends
DS(on)
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
PACKAGE INFORMATION
Package MPQ Leader Size
SOP-8PP 3K 13 inch
S
S
S
GD
D
D
D
Millimeter Millimete
REF.
Min. Max.
A 0.85 1.00 θ 0° 10°
B 5.40 5.60 b 5.10 5.30
C 0.15 0.25 c 0.30 0.50
D 3.71 3.91 d 1.27BSC
E 5.95 6.15 e 5.45 5.65
F 0.08 0.24 f 0.20 0.35
G 4.25 4.45 g 1.10 -
REF.
Min. Max.
ABSOLUTE MAXIMUM RATINGS (T
Parameter Symbol Rating Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Power Dissipation 1
Operating Junction and Storage Temperature Range T
Maximum Junction to Ambient 1
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Apr-2012 Rev. C Page 1 of 4
1
=25°C unless otherwise specified)
A
T
=25°C -17
A
=70°C
T
A
T
=25°C 5.0
A
T
=70°C
A
I
D
-50 A
DM
-2.1 A
S
P
D
, T
-55~150 °C
J
STG
Thermal Resistance Rating
t≦10 sec 25
Steady-State
R
θJA
-14
A
W
3.2
°C / W
65
Page 2
SSP7431P
Elektronische Bauelemente
-17A, -30V, R
P-Channel Enhancement MOSFET
DS(ON)
13 m
ELECTRICAL CHARACTERISTICS (T
Parameter
=25°C unless otherwise specified)
A
Symbol Min. Typ. Max.
Unit Teat Conditions
Static
Drain-Source Breakdown Voltage V
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - -0.8 - V IS=2.5A, VGS=0
Total Gate Charge Qg - 25 -
Gate-Source Charge Qgs - 11 -
Gate-Drain Charge Qgd - 17 -
Turn-On Delay Time Td
Rise Time Tr - 13 -
Turn-Off Delay Time Td
Fall Time Tf - 54 -
Notes:
1. Pulse test：PW ≦ 300 μs duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Apr-2012 Rev. C Page 2 of 4
-30 - - V VGS=0, ID = -250μA
(BR)DSS
-1 - - V VDS=VGS, ID = -250μA
GS(th)
- - ±100 nA VDS=0, VGS= ±25V
GSS
- - -1 VDS= -24V, VGS=0
DSS
-50 - - A VDS= -5V, VGS= -10V
D(ON)
- - -5
μA
VDS= -24V, VGS=0, TJ=55°C
- - 13 VGS= -10V, ID= -11.5A
DS(ON)
- 29 - S VDS= -15V,,ID= -11.5A
FS
- - 19
Dynamic
2
mΩ
= -4.5V, ID= -9.3A
V
GS
ID= -11.5A
nC
V
= -15V
DS
V
= -5V
GS
- 15 -
(ON)
= -1A, VDD= -15V
I
D
V
- 100 -
(OFF)
nS
R
GEN
=6Ω
L
= -10V
Page 3
SSP7431P
Elektronische Bauelemente
-17A, -30V, R
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Apr-2012 Rev. C Page 3 of 4
DS(ON)
13 m
Page 4
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSP7431P
-17A, -30V, R
P-Channel Enhancement MOSFET
DS(ON)
13 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Apr-2012 Rev. C Page 4 of 4
Loading...