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SSP7300N
Elektronische Bauelemente
2.4A, 300V, R
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DS(ON)
600 m
FEATURES
Low R
Low thermal impedance.
Fast switching speed.
trench technology.
DS(on)
APPLICATIONS
White LED boost converters.
Automotive Systems.
Industrial DC/DC Conversion Circuits.
PACKAGE INFORMATION
Package MPQ Leader Size
SOP-8PP 3K 13 inch
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit
(T
=25°C unless otherwise specified)
A
SOP-8PP
Millimeter Millimete
REF.
Min. Max.
A 0.85 1.00 θ 0° 10°
B 5.40 5.60 b 5.10 5.30
C 0.15 0.25 c 0.30 0.50
D 3.71 3.91 d 1.27BSC
E 5.95 6.15 e 5.45 5.65
F 0.08 0.24 f 0.20 0.35
G 4.25 4.45 g 1.10 -
REF.
Min. Max.
Drain-Source Voltage VDS 300 V
Gate-Source Voltage VGS ±20 V
T
=25°C 2.4
Continuous Drain Current
1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Power Dissipation 1
Operating Junction and Storage Temperature Range T
A
=70°C
T
A
T
=25°C 5
A
T
=70°C
A
I
D
10 A
DM
6.2 A
S
P
D
, T
-55~150 °C
J
STG
1.9
A
W
3.2
Thermal Resistance Data
Maximum Junction to Ambient 1
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Apr-2012 Rev. B Page 1 of 4
t≦10 sec 25
R
θJA
Steady State
65
°C / W
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (T
Parameter Symbol Min Typ Max Unit Test conditions
=25°C unless otherwise specified)
A
Static
SSP7300N
2.4A, 300V, R
N-Channel Enhancement MOSFET
DS(ON)
600 m
Gate-Threshold Voltage V
Gate-Body Leakage I
1 - - V VDS=VGS, ID=250μA
GS(th)
- - ±10 μA VDS=0, VGS= ±20V
GSS
- - 1 VDS=240V, VGS=0
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
DSS
10 - - A VDS=5V, VGS=10V
D(ON)
- - 10
μA
- - 600 VGS=10V, ID=2A
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
DS(ON)
- 10 - S VDS=15V,,ID=2A
FS
- - 900
mΩ
Diode Forward Voltage VSD - 0.77 - V IS=3.1A, VGS=0
Dynamic 2
Total Gate Charge Qg - 14.4 -
Gate-Source Charge Qgs - 3.9 -
Gate-Drain Charge Qgd - 3.6 -
Turn-On Delay Time Td
- 12.2 -
(ON)
Rise Time Tr - 9 -
Turn-Off Delay Time Td
- 32 -
(OFF)
Fall Time Tf - 20 -
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Notes:
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
- 1092 -
iss
- 90 -
oss
- 52 -
rss
nC
nS
pF V
VDS=240V, VGS=0,TJ=55°C
V
=5.5V, ID=1.6A
GS
=2A
I
D
V
=120V
DS
V
=10V
GS
=2A, VDD=120V
I
D
V
=10V
GEN
R
=60Ω, R
L
=15V, VGS=0, f=1MHz
DS
GEN
=6Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Apr-2012 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS CURVE
SSP7300N
2.4A, 300V, R
N-Channel Enhancement MOSFET
DS(ON)
600 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Apr-2012 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS CURVE
SSP7300N
2.4A, 300V, R
N-Channel Enhancement MOSFET
DS(ON)
600 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Apr-2012 Rev. B Page 4 of 4
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