Page 1
SSP7200N
3 A, 200 V, R
DS(ON)
400 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
03-Apr-2012 Rev. B
Page 1 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
Package
MPQ
Leader Size
SOP-8PP
3K
13’ inch
Parameter
Symbol
Rating
Unit
Drain-Source Voltage
VDS
200
V
Gate-Source Voltage
VGS
20
V
Continuous Drain Current 1
TA=25°C
ID 3 A
TA=70°C
2.4
Pulsed Drain Current 2
IDM
50
A
Continuous Source Current (Diode Conduction) 1
IS
2.3
A
Power Dissipation 1
TA=25°C
PD
5.0
W
TA=70°C
3.2
Operating Junction and Storage Temperature Range
TJ, T
STG
-55 ~ 150
°C
Thermal Resistance Rating
Maximum Junction to Ambient 1
t≦10 sec
R
θJA
25
°C / W
Steady State
65
Gate
Source
Drain
SOP-8PP
REF.
Millimeter
REF.
Millimeter
Min.
Max.
Min.
Max.
A
0.85
1.00
θ
0°
10°
B
5.40
5.60 b 5.10
5.30 C 0.15
0.25 c 0.30
0.50 D 3.71
3.91 d 1.27BSC
E
5.95
6.15 e 5.45
5.65 F 0.08
0.24 f 0.20
0.35 G 4.25
4.45 g 1.10
-
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell
density trench process to provide low R
and to ensure
DS(on)
minimal power loss and heat dissipation.
FEATURES
Low R
Low thermal impedance copper leadframe SOP-8PP saves board
space.
Fast switching speed.
High performance trench technology.
provides higher efficiency and extends battery life.
DS(on)
APPLICATION
DC-DC converters and power management in
portable and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones
PACKAGE INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
=25°C unless otherwise specified)
A
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Page 2
SSP7200N
3 A, 200 V, R
DS(ON)
400 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
03-Apr-2012 Rev. B
Page 2 of 2
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Gate-Threshold Voltage
V
GS(th)
1 - - V V
DS
= VGS, ID = 250μA
Gate-Body Leakage
I
GSS
- - ±100
nA
V
DS
= 0V, VGS= 12V
Zero Gate Voltage Drain Current
I
DSS
- - 1
μA
V
DS
= 160V, VGS= 0V
- - 5
V
DS
= 160V, VGS= 0V,TJ=55°C
On-State Drain Current 1
I
D(ON)
40 - - A V
DS
= 5V, VGS= 10V
Drain-Source On-Resistance 1
R
DS(ON)
- - 400
mΩ
VGS= 10V, ID = 3A
- - 450
VGS= 4.5V, ID = 2.8A
Forward Transconductance 1
gFS
-
40 - S
VDS= 15V,,ID = 3A
Diode Forward Voltage
VSD
-
0.7 - V
IS= 2.3A, VGS= 0V
Dynamic 2
Total Gate Charge
Qg
-
15
-
nC
ID= 6A
VDS= 15V
VGS= 4.5V
Gate-Source Charge
Qgs
- 3 -
Gate-Drain Charge
Qgd
- 5 -
Turn-On Delay Time
Td
(ON)
-
15
-
nS
ID= 1A, VDD= 15V
V
GEN
= 10V
RL= 6Ω
Rise Time
Tr
-
10
-
Turn-Off Delay Time
Td
(OFF)
-
54
-
Fall Time
Tf
-
26
-
ELECTRICAL CHARACTERISTICS (T
=25°C unless otherwise specified)
A
Notes
1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2. Guaranteed by design, not subject to production testing.
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