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SSP7150N
Elektronische Bauelemente
3.6A, 150V, R
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DS(ON)
255 m
FEATURES
Low R
Low thermal impedance.
Fast switching speed.
trench technology.
DS(on)
APPLICATIONS
White LED boost converters.
Automotive Systems.
Industrial DC/DC Conversion Circuits.
PACKAGE INFORMATION
Package MPQ Leader Size
SOP-8PP 3K 13 inch
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Rating Unit
(T
=25°C unless otherwise specified)
A
SOP-8PP
Millimeter Millimete
REF.
Min. Max.
A 0.85 1.00 θ 0° 10°
B 5.40 5.60 b 5.10 5.30
C 0.15 0.25 c 0.30 0.50
D 3.71 3.91 d 1.27BSC
E 5.95 6.15 e 5.45 5.65
F 0.08 0.24 f 0.20 0.35
G 4.25 4.45 g 1.10 -
REF.
Min. Max.
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS ±20 V
T
=25°C 3.6
Continuous Drain Current
1
Pulsed Drain Current 2 I
Continuous Source Current (Diode Conduction) 1 I
Power Dissipation 1
Operating Junction and Storage Temperature Range T
A
=70°C
T
A
T
=25°C 5
A
T
=70°C
A
I
D
20 A
DM
6.2 A
S
P
D
, T
-55~150 °C
J
STG
2.9
A
W
3.2
Thermal Resistance Data
Maximum Junction to Ambient 1
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Apr-2012 Rev. B Page 1 of 4
t≦10 sec 25
R
θJA
Steady State
65
°C / W
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r
y
SSP7150N
Elektronische Bauelemente
3.6A, 150V, R
N-Channel Enhancement MOSFET
DS(ON)
255 m
ELECTRICAL CHARACTERISTICS (T
Paramete
S
=25°C unless otherwise specified)
A
mbol Min Typ Max Unit Test condition
Static
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
On-State Drain Current 1 I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 g
Diode Forward Voltage VSD - 0.76 -
1 - -
GS(th)
- -
GSS
DSS
- - 1
- - 10
10 - -
D(ON)
- - 255
DS(ON)
- - 290
- 10 -
FS
Dynamic 2
Total Gate Charge Qg - 10.8 -
Gate-Source Charge Qgs - 3.3 -
Gate-Drain Charge Qgd - 5.6 -
Turn-On Delay Time Td
Rise Time Tr - 10 -
Turn-Off Delay Time Td
Fall Time Tf - 22 -
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Notes:
1. Pulse test：PW≦300μs duty cycle≦2%.
2. Guaranteed by design, not subject to production testing.
- 10.1 -
(ON)
- 50 -
(OFF)
- 848 -
iss
- 69 -
oss
- 29 -
rss
±10
V VDS=VGS, ID=250μA
nA V
μA
A V
mΩ
S V
V I
=0, VGS= ±20V
DS
=120V, VGS=0
V
DS
=120V, VGS=0,TJ=55°C
V
DS
=5V, VGS=10V
DS
=10V, ID=2.9A
V
GS
=4.5V, ID=2.7A
V
GS
=15V,,ID=2.9A
DS
=3.1A, VGS=0
S
ID=2.9A
nC
V
=75V
DS
V
=4.5V
GS
=2.9A, VDD=75V
I
D
V
nS
=10V
GEN
R
=25.9Ω, R
L
GEN
=6Ω
pF VDS=15V, VGS=0, f=1MHz
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Apr-2012 Rev. B Page 2 of 4
Page 3
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS CURVE
SSP7150N
3.6A, 150V, R
N-Channel Enhancement MOSFET
DS(ON)
255 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Apr-2012 Rev. B Page 3 of 4
Page 4
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS CURVE
SSP7150N
3.6A, 150V, R
N-Channel Enhancement MOSFET
DS(ON)
255 m
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
04-Apr-2012 Rev. B Page 4 of 4
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