Datasheet ssp5n90a Datasheet

Advanced Power MOSFET

SSP5N90A

FEATURES

Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low R

: 2.300 Ω (Typ.)

DS(ON)

Absolute Maximum Ratings

Characteristic Value UnitsSymbol

Drain-to-Source Voltage Continuous Drain Current (T Continuous Drain Current (T

=25ΟC)

C

=100ΟC)

C

Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (T

=25ΟC)

C

Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds

T

V

DSS

I

D

I

DM

V E

I

AR

E

dv/dt

P

, T

J

T

GS

AS

AR

D

STG

L

O

O O

BV R I

DSS

DS(on)

= 5 A

D

= 900 V

= 2.9 Ω

TO-220

1

2

3

1.Gate 2. Drain 3. Source

mJ

V/ns

W

W/

Ο

V A A

V

A

Ο

C

900

5

3.2

1

2

1 1

3

+

_

20

30

529

5

14

1.5

140

1.12

- 55 to +150

300

Thermal Resistance

R

θ

JC

R

θ

CS

R

θ

JA

Characteristic Max. UnitsSymbol Typ.

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

--

0.5

--

0.89

--

62.5

Ο

C /W

Rev. B

SSP5N90A

Electrical Characteristics (T

Ο

=25

C unless otherwise specified)

C

N-CHANNEL

POWER MOSFET

BV

DSS

∆BV/∆T V

GS(th)

I

GSS

I

DSS

R

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

CharacteristicSymbol

Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff.

J

Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse

Drain-to-Source Leakage Current

Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain( “Miller” ) Charge

900

--

2.0

--

Max. UnitsTyp.Min. Test Condition

=0V,ID=250µA

V

--

3.5

25

2.9

--

50 50 90

75 70

--

V

GS

Ο

I

V/

nA

µA

=250µA See Fig 7

C

D

V

Ω

pF

ns

=5V,ID=250µA

DS

V

=30V

GS

V

=-30V

GS

V

=900V

DS

V

=720V,TC=125ΟC

DS

=10V,ID=2.5A *

V

GS

VDS=50V,ID=2.5A

=0V,VDS=25V,f =1MHz

V

GS

See Fig 5

V

=450V,ID=5A,

DD

=13.6 Ω

R

G

See Fig 13

V

=720V,VGS=10V,

DS

nC

I

=5A

D

See Fig 6 & Fig 12

--

1.14

--

4.0

1110

105

43 21 39 94 32 54

9.0

25.0

100

-100

250

1440

125

200

4

O

4

O

O4O

4

O

5

Source-Drain Diode Ratings and Characteristics

CharacteristicSymbol Max. UnitsTyp.Min. Test Condition

I

SM

V

t

Q

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

1

O

L=40mH, I

2

O

3

I

O

4

Pulse Test : Pulse Width = 250

O

5

Essentially Independent of Operating Temperature

O

Continuous Source Current

S

Pulsed-Source Current Diode Forward Voltage

SD

Reverse Recovery Time

rr

Reverse Recovery Charge

rr

=5A, VDD=50V, RG=27Ω, Starting TJ =25 ΟC

AS

_

<

5A, di/dt 120A/ µs, VDD BV

SD

_

<

1

O

4

O

_

<

, Starting TJ =25 ΟC

DSS

µs, Duty Cycle 2%

--

540

5

20

1.4

--

A

V

ns

µC

--

5.62

--

_

<

Integral reverse pn-diode in the MOSFET T

=25ΟC ,IS=5A,VGS=0V

J

T

=25ΟC ,IF=5A

J

/dt=100A/µs

di

F

O

4

N-CHANNEL

POWER MOSFET

Fig 1. Output Characteristics Fig 2. Transfer Characteristics

V Top : 1 5 V

1 0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V Bottom : 4.5 V

-1

GS

0

10

VDS , Drain-Source Voltage [V]

1

10

0

10

, Drain Current [A]

-1

D

10

I

10

@ Notes :

1. 250

2. T

s Pulse Test

µ

= 25 oC

C

SSP5N90A

1

10

o

150

0

10

, Drain Current [A]

D

I

-1

1

10

2 4 6 8 10

C

25 oC

o

- 55

C

VGS , Gate-Source Voltage [V]

@ Notes :

1. V

2. V

3. 250

= 0 V

GS

= 50 V

DS

s Pulse Test

µ

10

8

= 10 V

V

]

Ω

6

GS

, [

DS(on)

4

R

2

Drain-Source On-Resistance

VGS = 20 V

@ Note : TJ = 25 oC

0

0 4 8 12 16 20

ID , Drain Current [A]

1600

C

iss

1200

800

Capacitance [pF]

C

400

oss

C

rss

0

10

C

= Cgs+ Cgd ( Cds= shorted )

iss

C

= Cds+ C

oss

gd

C

= C

rss

gd

1

10

@ Notes :

1. V

2. f = 1 MHz

VDS , Drain-Source Voltage [V]

GS

= 0 V

Fig 4. Source-Drain Diode Forward VoltageFig 3. On-Resistance vs. Drain Current

1

10

0

10

@ Notes :

= 0 V

, Reverse Drain Current [A]

DR

I

-1

10

0.2 0.4 0.6 0.8 1.0 1.2

150 oC

1. V

GS

s Pulse Test

2. 250

o

25

C

µ

VSD , Source-Drain Voltage [V]

Fig 6. Gate Charge vs. Gate-Source VoltageFig 5. Capacitance vs. Drain-Source Voltage

= 180 V

V

10

5

, Gate-Source Voltage [V]

GS

V

0

0 10 20 30 40 50 60

DS

= 450 V

V

DS

VDS = 720 V

@ Notes : ID = 5.0 A

QG , Total Gate Charge [nC]

SSP5N90A

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

1.2

1.1

3.0

2.5

2.0

POWER MOSFET

N-CHANNEL

1.0

, (Normalized)

DSS

BV

0.9

Drain-Source Breakdown Voltage

0.8

-75 -50 -25 0 25 50 75 100 125 150 175

@ Notes :

1. V

2. I

TJ , Junction Temperature [oC]

2

10

1

10

0

10

, Drain Current [A]

D

-1

I

10

-2

10

Operation in This Area is Limited by R

@ Notes :

1. T

2. T

3. Single Pulse

1

10

= 25 oC

C

= 150 oC

J

DS(on)

10

100 µs

1 ms

10 ms

DC

2

VDS , Drain-Source Voltage [V]

= 0 V

GS

= 250 µA

D

1.5

, (Normalized)

1.0

DS(on)

R

0.5

Drain-Source On-Resistance

0.0

-75 -50 -25 0 25 50 75 100 125 150 175

@ Notes :

1. V

2. I

= 10 V

GS

= 2.5 A

D

TJ , Junction Temperature [oC]

Fig 10. Max. Drain Current vs. Case TemperatureFig 9. Max. Safe Operating Area

6

10

s

µ

3

10

4

2

, Drain Current [A]

D

I

0

25 50 75 100 125 150

Tc , Case Temperature [oC]

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

(t) , Thermal Response

JC

θ

Z

-2

10

-5

10

single pulse

-4

10

t1 , Square Wave Pulse Duration [sec]

Fig 11. Thermal Response

@ Notes :

1. Z

2. Duty Factor, D=t

3. TJM-TC=PDM*Z

P

DM

-3

10

-2

10

-1

10

(t)=0.89 oC/W Max.

JC

θ

JC

θ

t

1

t

2

0

10

(t)

1/t2

1

10

N-CHANNEL

POWER MOSFET

SSP5N90A

Fig 12. Gate Charge Test Circuit & Waveform

10V

* Current Regulator

200nF12V

3mA

Current Sampling (IG)

V

in

R

G

50K¥Ø

V

out

*

Same Type

V

GS

as DUT

300nF

V

GS

10V

DS

Q

DUT

R

1

Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

DUT

R

2

Current Sampling (ID)

Resistor

R

L

V

DD

( 0.5 rated V

V

out

90%

)

DS

10%

V

in

gs

t

d(on)tr

Q

g

Q

gd

Charge

t

d(off)

t

on

f

t

off

Vary tp to obtain required peak I

10V

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BV

L

I

DUT

L

BV

D

C

V

DD

DSS

I

AS

V

DD

V

DS

D

R

G

t

p

E

= LL I

AS

----

1 2

2

AS

(t)

I

D

t

p

DSS

-------------------BV

-- V

DSS

DD

Time

V

(t)

DS

SSP5N90A

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

N-CHANNEL

POWER MOSFET

V

GS

( Driver )

DUT

+

V

DS

--

I

S

L

V

GS

Driver

R

G

D =

Same Type

as DUT

• dv/dt controlled by “RG•

• I

controlled by Duty Factor “D”

S

Gate Pulse Width

-------------------------Gate Pulse Period

V

DD

10V

I

S

( DUT )

V

DS

( DUT )

IFM , Body Diode Forward Current

I

RM

Body Diode Reverse Current

Body Diode Recovery dv/dt

V

f

Body Diode

Forward Voltage Drop

di/dt

V

DD

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx™ CoolFET™ CROSSVOLT™ E2CMOS

TM

FACT™ FACT Quiet Series™

®

FAST FASTr™ GTO™ HiSeC™

ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™

UHC™ VCX™

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2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STA TUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

Formative or In Design

First Production

Full Production

Not In Production

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.