Page 1
Millimeter
Millimeter
Min. Max. Min. Max.
A 1.150 1.250 F 0.170 0.270
B 0.750 0.850 G 0.270 0.370
C -
0.500 H 0 0.050
1111
GATE
Elektronische Bauelemente
FEATURES
Low on-resistance
Fast switching speed
Drive circuits can be simple
Parallel use is easy
Low voltage drive makes this device ideal for
portable equipment
APPLICATION
Interfacing
Switching
N Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SSN3541
0.1 A, 30 V, R
SOT-723
DS(ON)
8 Ω
ΩΩΩ
2
2 SOURCE
22
3
3 DRAIN
33
MARKING
KN
REF.
PACKAGE INFORMATION
Package MPQ Leader Size
SOT-723 8K 7 inch
D 1.150 1.250 I - 0.150
E
0.800TYP.
MAXIMUM RATINGS
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 100 mA
Total Power Dissipation PD 0.15 W
(TA = 25°C unless otherwise specified)
Parameter Symbol Ratings Unit
REF.
Thermal Resistance Junction-ambient R
Operating Junction & Storage Temperature Range TJ, T
Notes:
1. Pw≤10µs ,Duty cycle≤1%
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
09-Aug-2012 Rev. A Page 1 of 3
833 °C / W
θJA
150, -55~150 °C
STG
Page 2
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS
Parameter Symbol Min. Typ. Max. Unit Teat Conditions
0.1 A, 30 V, R
N Channel Enhancement MOSFET
(TA = 25°C unless otherwise specified)
Static
SSN3541
DS(ON)
8 Ω
ΩΩΩ
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate-Body Leakage Current I
Zero Gate Voltage Drain Current I
Drain-Source On-Resistance 1 R
Forward Transconductance 1 gfs
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-On Delay Time T
Rise Time Tr
Turn-Off Delay Time T
Fall Time Tf
(BR)DSS
GS(th)
GSS
DSS
DS(ON)
iss
oss
rss
d(on)
d(off)
30 - -
0.8 - 1.5
- - ±1
- - 1
- 5 8
- 7 13
20 - -
- 13 -
- 9 -
- 4 -
- 15 -
- 35 -
- 80 -
- 80 -
V VGS=0, ID=10µA
V VDS=3V, ID=100µA
µA VDS=0, VGS=±20V
µA VDS=30V, VGS=0
VGS=4V, ID=10mA
Ω
VGS=2.5V, ID=1mA
mS VDS=3V, ID=10mA
VDS=5V,
pF
VGS=0,
f=1MHz
VDD=5V
ID= 10mA
nS
VGS=5V
RL= 500Ω
RG=10Ω
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
09-Aug-2012 Rev. A Page 2 of 3
Page 3
Elektronische Bauelemente
CHARACTERISTIC CURVES
SSN3541
0.1 A, 30 V, R
N Channel Enhancement MOSFET
DS(ON)
8 Ω
ΩΩΩ
http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
09-Aug-2012 Rev. A Page 3 of 3
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